CN108231529A - 低压磁控阴极离子源 - Google Patents
低压磁控阴极离子源 Download PDFInfo
- Publication number
- CN108231529A CN108231529A CN201810196429.0A CN201810196429A CN108231529A CN 108231529 A CN108231529 A CN 108231529A CN 201810196429 A CN201810196429 A CN 201810196429A CN 108231529 A CN108231529 A CN 108231529A
- Authority
- CN
- China
- Prior art keywords
- cathode
- anode
- ion
- chamber
- ion source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005284 excitation Effects 0.000 claims abstract description 62
- 230000000712 assembly Effects 0.000 claims abstract description 35
- 238000000429 assembly Methods 0.000 claims abstract description 35
- 230000005684 electric field Effects 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 18
- 230000008569 process Effects 0.000 claims abstract description 16
- 239000000498 cooling water Substances 0.000 claims description 30
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- 238000001816 cooling Methods 0.000 claims description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 5
- 239000012212 insulator Substances 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 238000000576 coating method Methods 0.000 abstract description 5
- 239000011248 coating agent Substances 0.000 abstract description 4
- 230000008602 contraction Effects 0.000 abstract description 2
- 150000002500 ions Chemical class 0.000 description 91
- 230000000694 effects Effects 0.000 description 9
- 210000002381 plasma Anatomy 0.000 description 7
- 239000002245 particle Substances 0.000 description 5
- 238000009434 installation Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 238000010884 ion-beam technique Methods 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 238000007872 degassing Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
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- 230000008859 change Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 208000002925 dental caries Diseases 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- JEGUKCSWCFPDGT-UHFFFAOYSA-N h2o hydrate Chemical compound O.O JEGUKCSWCFPDGT-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
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- 238000007634 remodeling Methods 0.000 description 1
- 230000009469 supplementation Effects 0.000 description 1
- 230000003245 working effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J49/00—Particle spectrometers or separator tubes
- H01J49/02—Details
- H01J49/10—Ion sources; Ion guns
- H01J49/14—Ion sources; Ion guns using particle bombardment, e.g. ionisation chambers
- H01J49/147—Ion sources; Ion guns using particle bombardment, e.g. ionisation chambers with electrons, e.g. electron impact ionisation, electron attachment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
- C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J49/00—Particle spectrometers or separator tubes
- H01J49/02—Details
- H01J49/10—Ion sources; Ion guns
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810196429.0A CN108231529B (zh) | 2018-03-09 | 2018-03-09 | 低压磁控阴极离子源 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810196429.0A CN108231529B (zh) | 2018-03-09 | 2018-03-09 | 低压磁控阴极离子源 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108231529A true CN108231529A (zh) | 2018-06-29 |
CN108231529B CN108231529B (zh) | 2024-04-05 |
Family
ID=62658314
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810196429.0A Active CN108231529B (zh) | 2018-03-09 | 2018-03-09 | 低压磁控阴极离子源 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN108231529B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115354289A (zh) * | 2022-08-26 | 2022-11-18 | 松山湖材料实验室 | 一种离子源辅助沉积系统、沉积方法及真空镀膜设备 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4769101A (en) * | 1986-05-06 | 1988-09-06 | Dos Santos Pereiro Ribeiro C A | Apparatus for surface-treating workpieces |
TW511113B (en) * | 2000-11-30 | 2002-11-21 | Semequip Inc | Ion implantation with high brightness, low emittance ion source, acceleration-deceleration transport system and improved ion source construction |
WO2007023489A1 (en) * | 2005-08-21 | 2007-03-01 | Zvi Porat | A plasma emitter and methods utilizing the same |
CN101197239A (zh) * | 2006-12-05 | 2008-06-11 | 中国科学院合肥物质科学研究院 | 霍尔型离子源 |
US20090001290A1 (en) * | 2006-05-17 | 2009-01-01 | Nissin Ion Equipment Co., Ltd. | Ion Source and Method For Operating Same |
CN101661861A (zh) * | 2008-08-28 | 2010-03-03 | 中国科学院合肥物质科学研究院 | 用于超高真空系统的中空阳极离子源 |
CN104651779A (zh) * | 2015-02-11 | 2015-05-27 | 烟台首钢磁性材料股份有限公司 | 一种用于钕铁硼磁体的镀膜设备及镀膜工艺 |
CN105914124A (zh) * | 2015-02-23 | 2016-08-31 | 株式会社岛津制作所 | 电离设备 |
CN107068532A (zh) * | 2017-03-29 | 2017-08-18 | 中国计量科学研究院 | 一种电子轰击电离源 |
CN208240613U (zh) * | 2018-03-09 | 2018-12-14 | 威海斡兹真空科技有限公司 | 低压磁控阴极离子源 |
-
2018
- 2018-03-09 CN CN201810196429.0A patent/CN108231529B/zh active Active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4769101A (en) * | 1986-05-06 | 1988-09-06 | Dos Santos Pereiro Ribeiro C A | Apparatus for surface-treating workpieces |
TW511113B (en) * | 2000-11-30 | 2002-11-21 | Semequip Inc | Ion implantation with high brightness, low emittance ion source, acceleration-deceleration transport system and improved ion source construction |
WO2007023489A1 (en) * | 2005-08-21 | 2007-03-01 | Zvi Porat | A plasma emitter and methods utilizing the same |
US20090001290A1 (en) * | 2006-05-17 | 2009-01-01 | Nissin Ion Equipment Co., Ltd. | Ion Source and Method For Operating Same |
CN101197239A (zh) * | 2006-12-05 | 2008-06-11 | 中国科学院合肥物质科学研究院 | 霍尔型离子源 |
CN101661861A (zh) * | 2008-08-28 | 2010-03-03 | 中国科学院合肥物质科学研究院 | 用于超高真空系统的中空阳极离子源 |
CN104651779A (zh) * | 2015-02-11 | 2015-05-27 | 烟台首钢磁性材料股份有限公司 | 一种用于钕铁硼磁体的镀膜设备及镀膜工艺 |
CN105914124A (zh) * | 2015-02-23 | 2016-08-31 | 株式会社岛津制作所 | 电离设备 |
CN107068532A (zh) * | 2017-03-29 | 2017-08-18 | 中国计量科学研究院 | 一种电子轰击电离源 |
CN208240613U (zh) * | 2018-03-09 | 2018-12-14 | 威海斡兹真空科技有限公司 | 低压磁控阴极离子源 |
Non-Patent Citations (2)
Title |
---|
EFIM OKS ET AL.: "Low-energy dc ion source for low operating pressure", REVIEW OF SCIENTIFIC INSTRUMENTS, vol. 85, no. 083502 * |
弥谦;李鲜娟;: "空心阴极的等离子体源结构方案设计", 国外电子测量技术, no. 04 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115354289A (zh) * | 2022-08-26 | 2022-11-18 | 松山湖材料实验室 | 一种离子源辅助沉积系统、沉积方法及真空镀膜设备 |
CN115354289B (zh) * | 2022-08-26 | 2023-09-05 | 松山湖材料实验室 | 一种离子源辅助沉积系统、沉积方法及真空镀膜设备 |
Also Published As
Publication number | Publication date |
---|---|
CN108231529B (zh) | 2024-04-05 |
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TA01 | Transfer of patent application right |
Effective date of registration: 20180829 Address after: 264205 West Village, Huancui Town, Weihai City, Shandong Province Applicant after: WEIHAI HANZI VACUUM TECHNOLOGY Co.,Ltd. Address before: 264204 Jingshan Road, Yang Ting Town, Huancui District, Weihai, Shandong Applicant before: WEIHAI LANMO PHOTO-THERMAL TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20240105 Address after: 104-1, Building 1, Jiake Zhongchuang Valley Park, No. 3333 Guangyi Road, Daqiao Town, Nanhu District, Jiaxing City, Zhejiang Province, 314000 Applicant after: Xiaorui Vacuum Equipment (Jiaxing) Co.,Ltd. Address before: 264205 West Village, Huancui Town, Weihai City, Shandong Province Applicant before: WEIHAI HANZI VACUUM TECHNOLOGY Co.,Ltd. |
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