DE60110510D1 - Vorrichtung und Verfahren zur Substratbeschichtung - Google Patents

Vorrichtung und Verfahren zur Substratbeschichtung

Info

Publication number
DE60110510D1
DE60110510D1 DE60110510T DE60110510T DE60110510D1 DE 60110510 D1 DE60110510 D1 DE 60110510D1 DE 60110510 T DE60110510 T DE 60110510T DE 60110510 T DE60110510 T DE 60110510T DE 60110510 D1 DE60110510 D1 DE 60110510D1
Authority
DE
Germany
Prior art keywords
substrate coating
coating
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60110510T
Other languages
English (en)
Other versions
DE60110510T2 (de
Inventor
Desmond Gibson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Satisloh AG
Original Assignee
Satis Vacuum Industries Vertriebs AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Satis Vacuum Industries Vertriebs AG filed Critical Satis Vacuum Industries Vertriebs AG
Publication of DE60110510D1 publication Critical patent/DE60110510D1/de
Application granted granted Critical
Publication of DE60110510T2 publication Critical patent/DE60110510T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C23C14/044—Coating on selected surface areas, e.g. using masks using masks using masks to redistribute rather than totally prevent coating, e.g. producing thickness gradient
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
    • C23C14/546—Controlling the film thickness or evaporation rate using measurement on deposited material using crystal oscillators
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
    • C23C14/547—Controlling the film thickness or evaporation rate using measurement on deposited material using optical methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/3132—Evaporating
    • H01J2237/3137—Plasma-assisted co-operation
DE60110510T 2000-08-11 2001-08-10 Vorrichtung und Verfahren zur Substratbeschichtung Expired - Lifetime DE60110510T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0019848 2000-08-11
GBGB0019848.1A GB0019848D0 (en) 2000-08-11 2000-08-11 Apparatus and method for coating substrates

Publications (2)

Publication Number Publication Date
DE60110510D1 true DE60110510D1 (de) 2005-06-09
DE60110510T2 DE60110510T2 (de) 2005-10-13

Family

ID=9897489

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60110510T Expired - Lifetime DE60110510T2 (de) 2000-08-11 2001-08-10 Vorrichtung und Verfahren zur Substratbeschichtung

Country Status (6)

Country Link
US (1) US6616818B2 (de)
EP (2) EP1182271B8 (de)
JP (1) JP2002105627A (de)
CA (1) CA2354925C (de)
DE (1) DE60110510T2 (de)
GB (2) GB0019848D0 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6676816B2 (en) * 2001-05-11 2004-01-13 Therasense, Inc. Transition metal complexes with (pyridyl)imidazole ligands and sensors using said complexes
DE10204075B4 (de) * 2002-02-01 2006-09-07 Leybold Optics Gmbh Vorrichtung für Einrichtungen zur Bestimmung von Eigenschaften aufgebrachter Schichten
US7176474B2 (en) * 2003-10-31 2007-02-13 Tangidyne Corporation Method and apparatus for measuring and monitoring coatings
US7632542B2 (en) * 2005-10-26 2009-12-15 University Of Maryland Method for controlling uniformity of thin films fabricated in processing systems
US20070125303A1 (en) 2005-12-02 2007-06-07 Ward Ruby High-throughput deposition system for oxide thin film growth by reactive coevaportation
KR20080045974A (ko) * 2006-11-21 2008-05-26 삼성전자주식회사 박막 증착장치 및 박막 증착방법
US8691064B2 (en) * 2007-07-09 2014-04-08 Raytheon Canada Limited Sputter-enhanced evaporative deposition apparatus and method
US8039052B2 (en) * 2007-09-06 2011-10-18 Intermolecular, Inc. Multi-region processing system and heads
US20100266747A1 (en) * 2009-04-21 2010-10-21 Flir Systems, Inc. Combined crystal/optical assembly and method of its use
DE102010003106B4 (de) * 2010-03-22 2013-11-21 Von Ardenne Anlagentechnik Gmbh Verfahren, Vorrichtung und Beschichtungsanlage zur langzeitstabilen Verdampfung
EP2508645B1 (de) * 2011-04-06 2015-02-25 Applied Materials, Inc. Verdampfungssystem mit Messeinheit
AT512949B1 (de) * 2012-06-04 2016-06-15 Leica Microsysteme Gmbh Verfahren zur Beschichtung mit einem Verdampfungsmaterial
DE102012109626A1 (de) 2012-10-10 2014-04-10 Von Ardenne Anlagentechnik Gmbh Verfahren und Vorrichtung zur langzeitstabilen Beschichtung mittels Verdampfung
EP2971222B1 (de) * 2013-03-15 2024-04-24 RTX Corporation Abscheidungsvorrichtung und verfahren
US20150203959A1 (en) * 2013-11-15 2015-07-23 Skyworks Solutions, Inc. Systems, devices and methods related to source level compensation for electron-beam evaporators
CN103981505B (zh) * 2014-05-06 2016-04-13 京东方科技集团股份有限公司 一种监控装置
US10358714B2 (en) 2014-06-30 2019-07-23 Halliburton Energy Services, Inc. System and method for deposition of integrated computational elements (ICE) using a translation stage
DE102018131905B4 (de) * 2018-12-12 2024-04-25 VON ARDENNE Asset GmbH & Co. KG Verdampfungsanordnung und Verfahren
KR102319130B1 (ko) * 2020-03-11 2021-10-29 티오에스주식회사 가변 온도조절 장치를 구비한 금속-산화물 전자빔 증발원

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE282364C (de)
GB1177081A (en) 1966-03-25 1970-01-07 Bir Vac Ltd Improvements in or relating to Vacuum Coating
US3889019A (en) * 1969-03-13 1975-06-10 United Aircraft Corp Vapor randomization in vacuum deposition of coatings
US3667424A (en) 1969-04-14 1972-06-06 Stanford Research Inst Multi-station vacuum apparatus
DE3445424C1 (de) 1984-12-13 1986-04-24 Rudi 7080 Aalen Körner Vorrichtung zum Giessen von Zahnersatzmaterialien
US4776299A (en) 1986-05-15 1988-10-11 The United States Of America As Represented By The United States Department Of Energy Source replenishment device for vacuum deposition
DE3625700A1 (de) * 1986-07-30 1988-02-04 Siemens Ag Einrichtung zur herstellung und analyse von mehrkomoponentenfilmen
US4882198A (en) * 1986-11-26 1989-11-21 Optical Coating Laboratory, Inc. System and method for vacuum deposition of thin films
US5618388A (en) 1988-02-08 1997-04-08 Optical Coating Laboratory, Inc. Geometries and configurations for magnetron sputtering apparatus
US4851095A (en) 1988-02-08 1989-07-25 Optical Coating Laboratory, Inc. Magnetron sputtering apparatus and process
DD282364A7 (de) * 1988-03-08 1990-09-12 Akad Wissenschaften Ddr Verdampfergut-schalttiegel
EP0390692A3 (de) * 1989-03-29 1991-10-02 Terumo Kabushiki Kaisha Verfahren und Vorrichtung zur Herstellung einer Dünnschicht und Sensor
US5178739A (en) * 1990-10-31 1993-01-12 International Business Machines Corporation Apparatus for depositing material into high aspect ratio holes
US5490912A (en) 1994-05-31 1996-02-13 The Regents Of The University Of California Apparatus for laser assisted thin film deposition
KR0158780B1 (ko) * 1994-12-22 1998-11-16 가네꼬 히사시 화학 증착법에 의한 박막형성 방법 및 장치
US5665214A (en) * 1995-05-03 1997-09-09 Sony Corporation Automatic film deposition control method and system
US6010600A (en) 1996-02-22 2000-01-04 The Regents Of The University Of California Maskless deposition technique for the physical vapor deposition of thin film and multilayer coatings with subnanometer precision and accuracy
US5736073A (en) * 1996-07-08 1998-04-07 University Of Virginia Patent Foundation Production of nanometer particles by directed vapor deposition of electron beam evaporant
US6086727A (en) * 1998-06-05 2000-07-11 International Business Machines Corporation Method and apparatus to improve the properties of ion beam deposited films in an ion beam sputtering system
US6132575A (en) 1998-09-28 2000-10-17 Alcatel Magnetron reactor for providing a high density, inductively coupled plasma source for sputtering metal and dielectric films
US6350317B1 (en) * 1999-12-30 2002-02-26 Lam Research Corporation Linear drive system for use in a plasma processing system

Also Published As

Publication number Publication date
GB0119588D0 (en) 2001-10-03
CA2354925A1 (en) 2002-02-11
GB2368595A (en) 2002-05-08
GB2368595B (en) 2004-10-27
EP1182271A2 (de) 2002-02-27
EP1182271B8 (de) 2005-07-13
EP1182271B1 (de) 2005-05-04
US6616818B2 (en) 2003-09-09
EP1182271A3 (de) 2003-03-19
GB0019848D0 (en) 2000-09-27
EP1559809A2 (de) 2005-08-03
JP2002105627A (ja) 2002-04-10
DE60110510T2 (de) 2005-10-13
EP1559809A3 (de) 2005-11-02
US20020153247A1 (en) 2002-10-24
CA2354925C (en) 2008-01-08

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Legal Events

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8364 No opposition during term of opposition