DE60114383D1 - Verfahren und vorrichtung zur plasmabeschichtung - Google Patents
Verfahren und vorrichtung zur plasmabeschichtungInfo
- Publication number
- DE60114383D1 DE60114383D1 DE60114383T DE60114383T DE60114383D1 DE 60114383 D1 DE60114383 D1 DE 60114383D1 DE 60114383 T DE60114383 T DE 60114383T DE 60114383 T DE60114383 T DE 60114383T DE 60114383 D1 DE60114383 D1 DE 60114383D1
- Authority
- DE
- Germany
- Prior art keywords
- plasma coating
- plasma
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/205—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02131—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being halogen doped silicon oxides, e.g. FSG
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31629—Deposition of halogen doped silicon oxide, e.g. fluorine doped silicon oxide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31633—Deposition of carbon doped silicon oxide, e.g. SiOC
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000077049A JP2001267310A (ja) | 2000-03-17 | 2000-03-17 | プラズマ成膜方法及びその装置 |
JP2000077049 | 2000-03-17 | ||
PCT/JP2001/002135 WO2001069642A2 (en) | 2000-03-17 | 2001-03-16 | Plasma deposition method and system |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60114383D1 true DE60114383D1 (de) | 2005-12-01 |
DE60114383T2 DE60114383T2 (de) | 2006-07-27 |
Family
ID=18594688
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60114383T Expired - Fee Related DE60114383T2 (de) | 2000-03-17 | 2001-03-16 | Verfahren und vorrichtung zur plasmabeschichtung |
Country Status (7)
Country | Link |
---|---|
US (1) | US6767829B2 (de) |
EP (1) | EP1264329B1 (de) |
JP (1) | JP2001267310A (de) |
KR (1) | KR100727205B1 (de) |
DE (1) | DE60114383T2 (de) |
TW (1) | TW504772B (de) |
WO (1) | WO2001069642A2 (de) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3532830B2 (ja) * | 2000-05-24 | 2004-05-31 | キヤノン販売株式会社 | 半導体装置及びその製造方法 |
JP3934343B2 (ja) | 2000-07-12 | 2007-06-20 | キヤノンマーケティングジャパン株式会社 | 半導体装置及びその製造方法 |
JP3836032B2 (ja) | 2002-02-01 | 2006-10-18 | 三菱重工業株式会社 | プラズマcvd装置 |
JP3504940B2 (ja) | 2002-05-17 | 2004-03-08 | 沖電気工業株式会社 | 半導体装置の製造方法 |
US7009281B2 (en) * | 2003-03-14 | 2006-03-07 | Lam Corporation | Small volume process chamber with hot inner surfaces |
US7078344B2 (en) * | 2003-03-14 | 2006-07-18 | Lam Research Corporation | Stress free etch processing in combination with a dynamic liquid meniscus |
US6939796B2 (en) * | 2003-03-14 | 2005-09-06 | Lam Research Corporation | System, method and apparatus for improved global dual-damascene planarization |
US7140374B2 (en) * | 2003-03-14 | 2006-11-28 | Lam Research Corporation | System, method and apparatus for self-cleaning dry etch |
US7232766B2 (en) * | 2003-03-14 | 2007-06-19 | Lam Research Corporation | System and method for surface reduction, passivation, corrosion prevention and activation of copper surface |
US7217649B2 (en) * | 2003-03-14 | 2007-05-15 | Lam Research Corporation | System and method for stress free conductor removal |
NL1025096C2 (nl) * | 2003-12-21 | 2005-06-23 | Otb Group Bv | Werkwijze alsmede inrichting voor het vervaardigen van een functionele laag bestaande uit ten minste twee componenten. |
US7276135B2 (en) * | 2004-05-28 | 2007-10-02 | Lam Research Corporation | Vacuum plasma processor including control in response to DC bias voltage |
JP4593381B2 (ja) * | 2005-06-20 | 2010-12-08 | 東京エレクトロン株式会社 | 上部電極、プラズマ処理装置およびプラズマ処理方法 |
US20080175694A1 (en) * | 2007-01-19 | 2008-07-24 | Dong-Seok Park | Unit and method for transferring substrates and apparatus and method for treating substrates with the unit |
JP5058909B2 (ja) * | 2007-08-17 | 2012-10-24 | 株式会社半導体エネルギー研究所 | プラズマcvd装置及び薄膜トランジスタの作製方法 |
US7968378B2 (en) * | 2008-02-06 | 2011-06-28 | Infineon Technologies Ag | Electronic device |
JP5357710B2 (ja) * | 2009-11-16 | 2013-12-04 | 東京エレクトロン株式会社 | 基板処理方法,基板処理装置,プログラムを記録した記録媒体 |
JP2022044209A (ja) | 2020-09-07 | 2022-03-17 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP2022057423A (ja) | 2020-09-30 | 2022-04-11 | 東京エレクトロン株式会社 | プラズマ処理装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2774367B2 (ja) | 1990-08-07 | 1998-07-09 | 忠弘 大見 | プラズマプロセス用装置および方法 |
KR100226366B1 (ko) * | 1995-08-23 | 1999-10-15 | 아끼구사 나오유끼 | 플라즈마장치 및 플라즈마 처리방법 |
US6001728A (en) * | 1996-03-15 | 1999-12-14 | Applied Materials, Inc. | Method and apparatus for improving film stability of halogen-doped silicon oxide films |
US5989998A (en) * | 1996-08-29 | 1999-11-23 | Matsushita Electric Industrial Co., Ltd. | Method of forming interlayer insulating film |
US5661093A (en) * | 1996-09-12 | 1997-08-26 | Applied Materials, Inc. | Method for the stabilization of halogen-doped films through the use of multiple sealing layers |
US5804259A (en) * | 1996-11-07 | 1998-09-08 | Applied Materials, Inc. | Method and apparatus for depositing a multilayered low dielectric constant film |
US6136685A (en) * | 1997-06-03 | 2000-10-24 | Applied Materials, Inc. | High deposition rate recipe for low dielectric constant films |
US6051321A (en) * | 1997-10-24 | 2000-04-18 | Quester Technology, Inc. | Low dielectric constant materials and method |
US6020458A (en) * | 1997-10-24 | 2000-02-01 | Quester Technology, Inc. | Precursors for making low dielectric constant materials with improved thermal stability |
US6041734A (en) * | 1997-12-01 | 2000-03-28 | Applied Materials, Inc. | Use of an asymmetric waveform to control ion bombardment during substrate processing |
US6514880B2 (en) * | 1998-02-05 | 2003-02-04 | Asm Japan K.K. | Siloxan polymer film on semiconductor substrate and method for forming same |
US6054379A (en) * | 1998-02-11 | 2000-04-25 | Applied Materials, Inc. | Method of depositing a low k dielectric with organo silane |
JP2001057359A (ja) * | 1999-08-17 | 2001-02-27 | Tokyo Electron Ltd | プラズマ処理装置 |
-
2000
- 2000-03-17 JP JP2000077049A patent/JP2001267310A/ja active Pending
-
2001
- 2001-03-16 KR KR1020027011988A patent/KR100727205B1/ko not_active IP Right Cessation
- 2001-03-16 DE DE60114383T patent/DE60114383T2/de not_active Expired - Fee Related
- 2001-03-16 TW TW090106193A patent/TW504772B/zh not_active IP Right Cessation
- 2001-03-16 EP EP01912463A patent/EP1264329B1/de not_active Expired - Lifetime
- 2001-03-16 WO PCT/JP2001/002135 patent/WO2001069642A2/en active IP Right Grant
- 2001-03-16 US US10/221,860 patent/US6767829B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20030129851A1 (en) | 2003-07-10 |
KR20020086642A (ko) | 2002-11-18 |
KR100727205B1 (ko) | 2007-06-13 |
JP2001267310A (ja) | 2001-09-28 |
US6767829B2 (en) | 2004-07-27 |
WO2001069642A3 (en) | 2002-06-20 |
DE60114383T2 (de) | 2006-07-27 |
WO2001069642A2 (en) | 2001-09-20 |
EP1264329A2 (de) | 2002-12-11 |
TW504772B (en) | 2002-10-01 |
EP1264329B1 (de) | 2005-10-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE60009712D1 (de) | Verfahren und vorrichtung zur sprühbeschichtung | |
DE60110311D1 (de) | Verfahren und Vorrichtung zur Mehrfachsendung | |
DE50203544D1 (de) | Verfahren und Vorrichtung zur Drehbearbeitung | |
DE69722587D1 (de) | Vorrichtung und Verfahren zur Plasmavorbereitung | |
DE60237007D1 (de) | Verfahren und vorrichtung zur kurzfristigen inspekrobustheit | |
DE60133166D1 (de) | Verfahren und Vorrichtung zur Volumendarstellung | |
DE60008102D1 (de) | Verfahren und vorrichtung zur mehrfachsendung | |
DE60132586D1 (de) | Verfahren und vorrichtung zur abtastratenwandlung | |
DE60034121D1 (de) | Verfahren und vorrichtung zur streuparameter-kalibrierung | |
DE50109562D1 (de) | Vorrichtung und verfahren zur winkelmessung | |
DE60123974D1 (de) | Verfahren und vorrichtung zur reifenherstellung | |
DE50100861D1 (de) | Verfahren und Vorrichtung zur Laser-Mikrodissektion | |
DE60040530D1 (de) | Verfahren und vorrichtung zur elektrosprüh-massenspektrometrie | |
DE60142605D1 (de) | Verfahren und Vorrichtung zur Plasma-Behandlung | |
DE50007073D1 (de) | Verfahren und vorrichtung zur strahlformung | |
DE60114383D1 (de) | Verfahren und vorrichtung zur plasmabeschichtung | |
DE60218573D1 (de) | Verfahren und Vorrichtung zur Mehrfachsendung | |
DE60018894D1 (de) | Verfahren und System zur Beschichtung | |
DE60110510D1 (de) | Vorrichtung und Verfahren zur Substratbeschichtung | |
DE50100784D1 (de) | Verfahren und Vorrichtung zur Laser-Mikrodissektion | |
DE50109658D1 (de) | Vorrichtung und Verfahren zur Sprachsteuerung | |
DE60217752D1 (de) | Verfahren und Vorrichtung zur Netzwerkverbindung | |
DE50106249D1 (de) | Verfahren und Vorrichtung zur programmgesteuerten Fahrwerkvermessung | |
DE60118766D1 (de) | Verfahren und vorrichtung zur kristallisierung | |
DE60233920D1 (de) | Verfahren und Vorrichtung zur Beschleunigung einer ARC4-Verarbeitung |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |