DE69802581T2 - Verfahren zur Züchtung von Einkristallen - Google Patents

Verfahren zur Züchtung von Einkristallen

Info

Publication number
DE69802581T2
DE69802581T2 DE69802581T DE69802581T DE69802581T2 DE 69802581 T2 DE69802581 T2 DE 69802581T2 DE 69802581 T DE69802581 T DE 69802581T DE 69802581 T DE69802581 T DE 69802581T DE 69802581 T2 DE69802581 T2 DE 69802581T2
Authority
DE
Germany
Prior art keywords
single crystals
growing single
growing
crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69802581T
Other languages
English (en)
Other versions
DE69802581D1 (de
Inventor
Masakatsu Okada
Takenori Sekijima
Takashi Fujii
Kikuo Wakino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Publication of DE69802581D1 publication Critical patent/DE69802581D1/de
Application granted granted Critical
Publication of DE69802581T2 publication Critical patent/DE69802581T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/225—Complex oxides based on rare earth copper oxides, e.g. high T-superconductors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
DE69802581T 1997-03-12 1998-03-10 Verfahren zur Züchtung von Einkristallen Expired - Lifetime DE69802581T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP07897797A JP3237564B2 (ja) 1997-03-12 1997-03-12 単結晶育成方法

Publications (2)

Publication Number Publication Date
DE69802581D1 DE69802581D1 (de) 2002-01-03
DE69802581T2 true DE69802581T2 (de) 2002-07-18

Family

ID=13676964

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69802581T Expired - Lifetime DE69802581T2 (de) 1997-03-12 1998-03-10 Verfahren zur Züchtung von Einkristallen

Country Status (6)

Country Link
US (1) US6039802A (de)
EP (1) EP0864669B1 (de)
JP (1) JP3237564B2 (de)
KR (1) KR100262388B1 (de)
CN (1) CN1139678C (de)
DE (1) DE69802581T2 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11278980A (ja) * 1998-03-25 1999-10-12 Murata Mfg Co Ltd 単結晶育成方法
JP2001151595A (ja) * 1999-11-19 2001-06-05 Murata Mfg Co Ltd 単結晶製造方法および製造装置
JP2002249399A (ja) * 2001-02-21 2002-09-06 Murata Mfg Co Ltd 単結晶の製造方法および単結晶
US20030054105A1 (en) * 2001-08-14 2003-03-20 Hammond Robert H. Film growth at low pressure mediated by liquid flux and induced by activated oxygen
JP3731508B2 (ja) 2001-08-20 2006-01-05 株式会社村田製作所 磁性単結晶育成用原料棒及び磁性単結晶
JP3822150B2 (ja) * 2002-08-12 2006-09-13 独立行政法人科学技術振興機構 酸化ガリウム鉄混晶の結晶製造方法
JP3642063B2 (ja) * 2002-08-22 2005-04-27 株式会社村田製作所 テルビウム・アルミニウム系常磁性ガーネット単結晶の製造方法
US20060143960A1 (en) * 2005-01-06 2006-07-06 Gnas D M Protective device for a portable sign or sign frame
US7708831B2 (en) * 2006-03-01 2010-05-04 Mitsubishi Gas Chemical Company, Inc. Process for producing ZnO single crystal according to method of liquid phase growth
JP2007254174A (ja) * 2006-03-20 2007-10-04 Nippon Light Metal Co Ltd 酸化ガリウム単結晶及びその製造方法、並びに窒化物半導体用基板及びその製造方法
WO2009081811A1 (ja) * 2007-12-25 2009-07-02 Crystal Systems Corporation 浮遊帯域溶融装置
DE102012008679B4 (de) * 2012-05-02 2017-08-03 Leibniz-Institut Für Festkörper- Und Werkstoffforschung Dresden E.V. Zonenschmelz-Vorrichtung und Verfahren zur Modifikation von Materialgefügen mittels Zonenschmelzen
CN102863208B (zh) * 2012-09-24 2014-04-16 陕西科技大学 一种三相磁电复合材料及其制备方法
CN102850051B (zh) * 2012-09-24 2013-11-27 陕西科技大学 一种YFeO3 基双相磁电复合材料及其制备方法
CN104651937B (zh) * 2015-02-10 2018-01-05 中国科学院物理研究所 磁制冷材料CaFe0.7Co0.3O3单晶及其制备方法
WO2016147265A1 (ja) * 2015-03-13 2016-09-22 伸 阿久津 単結晶製造装置および単結晶製造方法
US20170158543A1 (en) * 2015-12-05 2017-06-08 Spiral Arts, Inc. Method and Apparatus For Additive Manufacturing of Objects Using Droplets of Molten Glass
CN105671628B (zh) * 2016-02-01 2018-04-20 昝涵今 一种激光加热区熔生长大薄片或异形翘曲单晶的装置及其生长方法
JP2017154919A (ja) * 2016-03-01 2017-09-07 株式会社クリスタルシステム 浮遊帯域溶融装置
GB201908788D0 (en) * 2019-06-19 2019-07-31 Cambridge Entpr Ltd Reinforced bulk high temperature superconductors and method for their manufacture
CN112410869A (zh) * 2020-11-27 2021-02-26 枣庄学院 一种助熔剂倒提拉晶体生长的方法
CN115386956B (zh) * 2021-05-24 2023-09-08 中国科学院上海硅酸盐研究所 一种移动熔剂浮区法生长钆镓石榴石晶体的方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1061527B (de) * 1953-02-14 1959-07-16 Siemens Ag Verfahren zum zonenweisen Umschmelzen von Staeben und anderen langgestreckten Werkstuecken
US4218282A (en) * 1977-06-17 1980-08-19 Kabushiki Kaisha Suwa Seikosha Method of preparation of chrysoberyl and beryl single crystals
US4256531A (en) * 1977-08-09 1981-03-17 National Institute For Researches In Inorganic Materials Process for producing single crystal of yttrium-iron garnet or solid solution thereof
US4532000A (en) * 1983-09-28 1985-07-30 Hughes Aircraft Company Fabrication of single crystal fibers from congruently melting polycrystalline fibers
US4654065A (en) * 1985-12-05 1987-03-31 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Quasi-containerless glass formation method and apparatus
US5444040A (en) * 1989-12-18 1995-08-22 Seiko Epson Corporation Superconductive oxide single crystal and manufacturing method thereof
JPH0748200A (ja) * 1993-08-04 1995-02-21 Natl Space Dev Agency Japan<Nasda> 単結晶の製造方法
US5891828A (en) * 1996-10-14 1999-04-06 Agency Of Industrial Science & Technology, Ministry Of International Trade & Industry Method of producing superconducting PrBa2 Cu3 Oy single crystal and PrBa2 Cu3 Oy superconducting device

Also Published As

Publication number Publication date
DE69802581D1 (de) 2002-01-03
KR100262388B1 (ko) 2000-09-01
US6039802A (en) 2000-03-21
EP0864669B1 (de) 2001-11-21
CN1139678C (zh) 2004-02-25
JP3237564B2 (ja) 2001-12-10
EP0864669A2 (de) 1998-09-16
EP0864669A3 (de) 2000-05-17
KR19980080180A (ko) 1998-11-25
CN1197853A (zh) 1998-11-04
JPH10251088A (ja) 1998-09-22

Similar Documents

Publication Publication Date Title
DE69613767D1 (de) Verfahren zur Züchtung von grossen Einkristallen
DE69802581D1 (de) Verfahren zur Züchtung von Einkristallen
DE59901313D1 (de) VERFAHREN ZUR ZÜCHTUNG VON SiC-EINKRISTALLEN
DE69910557D1 (de) Verfahren zur reinigung von aminonitrilen
DE69508801D1 (de) Verfahren zur Kristallzüchtung von III-V Halbleiterverbindungen
DE69627613D1 (de) Verfahren zur Rückgewinnung von Substraten
DE69133236D1 (de) Verfahren zur Einkristallzüchtung
DE69723865D1 (de) Verfahren und vorrichtung zur herstellung von einkristallen
DE69841108D1 (de) Verfahren zur herstellung von siliziumkarbideinkristallen
ATE214388T1 (de) Verfahren zur kristallisation von losartan
ATA124894A (de) Verfahren zur direktreduktion von eisenoxidhältigem material
DE59804785D1 (de) Verbessertes Verfahren zur Stabilisierung von Proteinen
DE69614569D1 (de) Verfahren zur vermehrung von pflanzenmaterial
DE69802515D1 (de) Verfahren zur anreicherung von rohsalz
DE59813182D1 (de) Verfahren zur herstellung von aryloligoaminen
DE69839792D1 (de) Verfahren zur Herstellung von hochreinen Erythritol-Kristallen
DE69414652T2 (de) Verbessertes Verfahren zur Bildung von Siliconkristallen
DE69009719T2 (de) Verfahren zur Züchtung von Antimon-dotierten Silizium-Einkristallen.
DE69501090T2 (de) Verfahren zur Kristallzüchtung
ATA219599A (de) Verfahren zum züchten von einkristallen
ATA96197A (de) Verfahren zur reinigung von schadstoffbelasteten gasen
DE59507436D1 (de) Verfahren zur direktreduktion von eisenoxidhältigem material
DE19880712T1 (de) Verfahren zur Züchtung von Einkristallen
ATE206392T1 (de) Verfahren zur alkylierug von gehinderten sulfonamiden
DE60017324D1 (de) Verfahren zur Kristallzüchtung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition