DE69324633T2 - Verfahren zur Herstellung eines einkristallinen Dünnfilmes - Google Patents

Verfahren zur Herstellung eines einkristallinen Dünnfilmes

Info

Publication number
DE69324633T2
DE69324633T2 DE69324633T DE69324633T DE69324633T2 DE 69324633 T2 DE69324633 T2 DE 69324633T2 DE 69324633 T DE69324633 T DE 69324633T DE 69324633 T DE69324633 T DE 69324633T DE 69324633 T2 DE69324633 T2 DE 69324633T2
Authority
DE
Germany
Prior art keywords
producing
thin film
crystal thin
crystal
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69324633T
Other languages
English (en)
Other versions
DE69324633D1 (de
Inventor
Noriyuki Yoshida
Satoshi Takano
Kousou Fujino
Shigeru Okuda
Tsukushi Hara
Hideo Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Tokyo Electric Power Co Inc
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP11148893A external-priority patent/JP3596007B2/ja
Priority claimed from JP5117203A external-priority patent/JPH06334230A/ja
Application filed by Tokyo Electric Power Co Inc, Sumitomo Electric Industries Ltd filed Critical Tokyo Electric Power Co Inc
Publication of DE69324633D1 publication Critical patent/DE69324633D1/de
Application granted granted Critical
Publication of DE69324633T2 publication Critical patent/DE69324633T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming superconductor layers
    • H10N60/0521—Processes for depositing or forming superconductor layers by pulsed laser deposition, e.g. laser sputtering; laser ablation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/225—Complex oxides based on rare earth copper oxides, e.g. high T-superconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming superconductor layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming superconductor layers
    • H10N60/0576—Processes for depositing or forming superconductor layers characterised by the substrate
    • H10N60/0632—Intermediate layers, e.g. for growth control
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/729—Growing single crystal, e.g. epitaxy, bulk
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73—Vacuum treating or coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73—Vacuum treating or coating
    • Y10S505/732—Evaporative coating with superconducting material
DE69324633T 1992-07-30 1993-07-07 Verfahren zur Herstellung eines einkristallinen Dünnfilmes Expired - Fee Related DE69324633T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP20385892 1992-07-30
JP11148893A JP3596007B2 (ja) 1992-07-30 1993-05-13 単結晶性薄膜の形成方法
JP5117203A JPH06334230A (ja) 1993-05-19 1993-05-19 酸化物超電導薄膜の形成方法

Publications (2)

Publication Number Publication Date
DE69324633D1 DE69324633D1 (de) 1999-06-02
DE69324633T2 true DE69324633T2 (de) 1999-12-16

Family

ID=27311973

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69324633T Expired - Fee Related DE69324633T2 (de) 1992-07-30 1993-07-07 Verfahren zur Herstellung eines einkristallinen Dünnfilmes

Country Status (4)

Country Link
US (1) US5372089A (de)
EP (1) EP0581254B1 (de)
CA (1) CA2101285C (de)
DE (1) DE69324633T2 (de)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
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US5643801A (en) * 1992-11-06 1997-07-01 Semiconductor Energy Laboratory Co., Ltd. Laser processing method and alignment
US6410374B1 (en) * 1992-12-26 2002-06-25 Semiconductor Energy Laborartory Co., Ltd. Method of crystallizing a semiconductor layer in a MIS transistor
US6544825B1 (en) 1992-12-26 2003-04-08 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a MIS transistor
US5386798A (en) * 1993-10-06 1995-02-07 Martin Marietta Energy Systems, Inc. Method for continuous control of composition and doping of pulsed laser deposited films
JP3623001B2 (ja) * 1994-02-25 2005-02-23 住友電気工業株式会社 単結晶性薄膜の形成方法
US5741377A (en) * 1995-04-10 1998-04-21 Martin Marietta Energy Systems, Inc. Structures having enhanced biaxial texture and method of fabricating same
US7118996B1 (en) * 1996-05-15 2006-10-10 Semiconductor Energy Laboratory Co., Ltd. Apparatus and method for doping
JP3917698B2 (ja) * 1996-12-12 2007-05-23 株式会社半導体エネルギー研究所 レーザーアニール方法およびレーザーアニール装置
US5964966A (en) * 1997-09-19 1999-10-12 Lockheed Martin Energy Research Corporation Method of forming biaxially textured alloy substrates and devices thereon
US6027564A (en) * 1997-09-23 2000-02-22 American Superconductor Corporation Low vacuum vapor process for producing epitaxial layers
US6022832A (en) * 1997-09-23 2000-02-08 American Superconductor Corporation Low vacuum vapor process for producing superconductor articles with epitaxial layers
US6428635B1 (en) 1997-10-01 2002-08-06 American Superconductor Corporation Substrates for superconductors
US6458223B1 (en) 1997-10-01 2002-10-01 American Superconductor Corporation Alloy materials
US6296701B1 (en) 1998-09-30 2001-10-02 Ut-Battelle, Llc Method of depositing an electrically conductive oxide film on a textured metallic substrate and articles formed therefrom
US6114287A (en) * 1998-09-30 2000-09-05 Ut-Battelle, Llc Method of deforming a biaxially textured buffer layer on a textured metallic substrate and articles therefrom
US6475311B1 (en) 1999-03-31 2002-11-05 American Superconductor Corporation Alloy materials
CN1953148B (zh) * 1999-08-13 2010-06-02 株式会社半导体能源研究所 半导体器件的制造方法
TW473783B (en) * 1999-08-13 2002-01-21 Semiconductor Energy Lab Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device
US6605321B1 (en) * 2000-07-20 2003-08-12 Centre National De La Recherche Scientifique (Cnrs) Method of treating materials by irradiation
US7568445B2 (en) 2000-11-17 2009-08-04 Lockheed Martin Corporation System and method for the holographic deposition of material
US6821338B2 (en) * 2000-12-15 2004-11-23 The Regents Of The University Of California Particle beam biaxial orientation of a substrate for epitaxial crystal growth
JP2002266072A (ja) * 2001-03-09 2002-09-18 Sumitomo Electric Ind Ltd 積層膜および成膜方法
US6809066B2 (en) * 2001-07-30 2004-10-26 The Regents Of The University Of California Ion texturing methods and articles
JP2003332257A (ja) * 2002-05-17 2003-11-21 Fujitsu Ltd 半導体結晶化方法及び装置
US6977775B2 (en) * 2002-05-17 2005-12-20 Sharp Kabushiki Kaisha Method and apparatus for crystallizing semiconductor with laser beams
US20050005846A1 (en) * 2003-06-23 2005-01-13 Venkat Selvamanickam High throughput continuous pulsed laser deposition process and apparatus
US7879763B2 (en) * 2006-11-10 2011-02-01 Superpower, Inc. Superconducting article and method of making
US9487885B2 (en) 2012-06-14 2016-11-08 Tivra Corporation Substrate structures and methods
US9879357B2 (en) * 2013-03-11 2018-01-30 Tivra Corporation Methods and systems for thin film deposition processes
JP6255647B2 (ja) * 2013-07-25 2018-01-10 株式会社ユーテック 結晶膜、結晶膜の製造方法、蒸着装置及びマルチチャンバー装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2822447B2 (ja) * 1989-05-19 1998-11-11 住友電気工業株式会社 酸化物超電導線材の製造方法および装置
JPH03252007A (ja) * 1990-02-28 1991-11-11 Chodendo Hatsuden Kanren Kiki Zairyo Gijutsu Kenkyu Kumiai 酸化物系超電導体とその製造方法
JPH0758602B2 (ja) * 1990-03-27 1995-06-21 工業技術院長 超伝導テープの製造方法
US5597411A (en) * 1991-02-19 1997-01-28 Energy Conversion Devices, Inc. Method of forming a single crystal material

Also Published As

Publication number Publication date
DE69324633D1 (de) 1999-06-02
EP0581254A1 (de) 1994-02-02
EP0581254B1 (de) 1999-04-28
CA2101285A1 (en) 1994-01-31
CA2101285C (en) 1998-09-15
US5372089A (en) 1994-12-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: SUMITOMO ELECTRIC INDUSTRIES, LTD., OSAKA, JP

8339 Ceased/non-payment of the annual fee