DE69501090T2 - Verfahren zur Kristallzüchtung - Google Patents

Verfahren zur Kristallzüchtung

Info

Publication number
DE69501090T2
DE69501090T2 DE69501090T DE69501090T DE69501090T2 DE 69501090 T2 DE69501090 T2 DE 69501090T2 DE 69501090 T DE69501090 T DE 69501090T DE 69501090 T DE69501090 T DE 69501090T DE 69501090 T2 DE69501090 T2 DE 69501090T2
Authority
DE
Germany
Prior art keywords
crystal growing
growing process
crystal
growing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69501090T
Other languages
English (en)
Other versions
DE69501090D1 (de
Inventor
Takayuki Kubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Corp
Original Assignee
Sumitomo Sitix Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Sitix Corp filed Critical Sumitomo Sitix Corp
Application granted granted Critical
Publication of DE69501090D1 publication Critical patent/DE69501090D1/de
Publication of DE69501090T2 publication Critical patent/DE69501090T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69501090T 1994-03-31 1995-03-29 Verfahren zur Kristallzüchtung Expired - Fee Related DE69501090T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6063614A JPH07267776A (ja) 1994-03-31 1994-03-31 結晶成長方法

Publications (2)

Publication Number Publication Date
DE69501090D1 DE69501090D1 (de) 1998-01-08
DE69501090T2 true DE69501090T2 (de) 1998-06-10

Family

ID=13234369

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69501090T Expired - Fee Related DE69501090T2 (de) 1994-03-31 1995-03-29 Verfahren zur Kristallzüchtung

Country Status (4)

Country Link
US (1) US5840116A (de)
EP (1) EP0675214B1 (de)
JP (1) JPH07267776A (de)
DE (1) DE69501090T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3528888B2 (ja) * 1995-12-28 2004-05-24 信越半導体株式会社 シリコン単結晶の製造装置および方法
JPH10297994A (ja) * 1997-04-25 1998-11-10 Sumitomo Sitix Corp シリコン単結晶育成方法
JP2992988B2 (ja) * 1997-11-06 1999-12-20 日本電気株式会社 シリコン単結晶育成方法
JP2000044387A (ja) * 1998-07-27 2000-02-15 Nippon Steel Corp シリコン単結晶製造方法
US6482261B2 (en) 2000-12-29 2002-11-19 Ebara Solar, Inc. Magnetic field furnace
JP2005322712A (ja) * 2004-05-07 2005-11-17 Toyota Motor Corp 半導体基板，半導体装置，およびそれらの製造方法
US20100319613A1 (en) * 2008-02-18 2010-12-23 Sumco Corporation Silicon monocrystal growth method
CN107849728B (zh) * 2015-07-27 2020-10-16 各星有限公司 使用双层连续Czochralsk法低氧晶体生长的系统和方法
CN111962142B (zh) * 2020-07-13 2021-06-25 大同新成新材料股份有限公司 一种便于半导体晶体生长的石墨坩埚及其使用方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55126597A (en) * 1979-03-23 1980-09-30 Nec Corp Single crystal growing method
JPS5850951B2 (ja) * 1979-09-20 1983-11-14 ソニー株式会社 結晶の成長方法とこれに用いる結晶成長装置
JPS5850953B2 (ja) * 1980-01-28 1983-11-14 ソニー株式会社 結晶成長法
JPS59102893A (ja) * 1982-12-01 1984-06-14 Nippon Telegr & Teleph Corp <Ntt> 結晶の育成方法
US4637854A (en) * 1983-01-18 1987-01-20 Agency Of Industrial Science And Technology Method for producing GaAs single crystal
JPS6027682A (ja) * 1983-07-26 1985-02-12 Toshiba Corp 単結晶引上装置
JPS6033298A (ja) * 1983-07-29 1985-02-20 Toshiba Ceramics Co Ltd 単結晶半導体の製造方法
US4565671A (en) * 1983-08-05 1986-01-21 Kabushiki Kaisha Toshiba Single crystal manufacturing apparatus
JPS61205691A (ja) * 1985-03-06 1986-09-11 Sumitomo Metal Ind Ltd 結晶成長方法
JPS61215285A (ja) * 1985-03-20 1986-09-25 Sumitomo Metal Ind Ltd 結晶成長方法
US4659423A (en) * 1986-04-28 1987-04-21 International Business Machines Corporation Semiconductor crystal growth via variable melt rotation
JPS63252989A (ja) * 1987-04-08 1988-10-20 Sumitomo Electric Ind Ltd 引上法による半導体単結晶の製造方法
JPH01282185A (ja) * 1988-05-09 1989-11-14 Nippon Telegr & Teleph Corp <Ntt> 結晶の育成方法
JPH0745355B2 (ja) * 1989-06-08 1995-05-17 住友金属工業株式会社 結晶成長方法及びその装置
JP2686460B2 (ja) * 1990-03-12 1997-12-08 住友シチックス株式会社 単結晶製造方法
DE4204777A1 (de) * 1991-02-20 1992-10-08 Sumitomo Metal Ind Vorrichtung und verfahren zum zuechten von einkristallen
JPH0524972A (ja) * 1991-02-20 1993-02-02 Sumitomo Metal Ind Ltd 結晶成長方法
US5178720A (en) * 1991-08-14 1993-01-12 Memc Electronic Materials, Inc. Method for controlling oxygen content of silicon crystals using a combination of cusp magnetic field and crystal and crucible rotation rates

Also Published As

Publication number Publication date
JPH07267776A (ja) 1995-10-17
EP0675214B1 (de) 1997-11-26
US5840116A (en) 1998-11-24
EP0675214A1 (de) 1995-10-04
DE69501090D1 (de) 1998-01-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee