DE69301378D1 - Verfahren zur Diamantherstellung - Google Patents

Verfahren zur Diamantherstellung

Info

Publication number
DE69301378D1
DE69301378D1 DE69301378T DE69301378T DE69301378D1 DE 69301378 D1 DE69301378 D1 DE 69301378D1 DE 69301378 T DE69301378 T DE 69301378T DE 69301378 T DE69301378 T DE 69301378T DE 69301378 D1 DE69301378 D1 DE 69301378D1
Authority
DE
Germany
Prior art keywords
manufacturing process
diamond manufacturing
diamond
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69301378T
Other languages
English (en)
Other versions
DE69301378T2 (de
Inventor
Nobuhiro Ota
Naoji Fujimori
Kenichi Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE69301378D1 publication Critical patent/DE69301378D1/de
Application granted granted Critical
Publication of DE69301378T2 publication Critical patent/DE69301378T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/047—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using coherent light, UV to IR, e.g. lasers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
DE69301378T 1992-07-09 1993-07-07 Verfahren zur Diamantherstellung Expired - Fee Related DE69301378T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4182617A JPH0624896A (ja) 1992-07-09 1992-07-09 ダイヤモンド合成方法

Publications (2)

Publication Number Publication Date
DE69301378D1 true DE69301378D1 (de) 1996-03-07
DE69301378T2 DE69301378T2 (de) 1996-05-30

Family

ID=16121425

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69301378T Expired - Fee Related DE69301378T2 (de) 1992-07-09 1993-07-07 Verfahren zur Diamantherstellung

Country Status (5)

Country Link
US (1) US5387443A (de)
EP (1) EP0578232B1 (de)
JP (1) JPH0624896A (de)
CA (1) CA2100132C (de)
DE (1) DE69301378T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0640797A (ja) * 1992-04-23 1994-02-15 Sumitomo Electric Ind Ltd ダイヤモンドの加工方法
EP0752018A4 (de) * 1994-05-12 1998-09-02 Qqc Inc Verfahren zur oberflächenbehandlung
US5637950A (en) * 1994-10-31 1997-06-10 Lucent Technologies Inc. Field emission devices employing enhanced diamond field emitters
US5826328A (en) * 1996-03-25 1998-10-27 International Business Machines Method of making a thin radio frequency transponder
US7568445B2 (en) 2000-11-17 2009-08-04 Lockheed Martin Corporation System and method for the holographic deposition of material
DE10259174B4 (de) * 2002-12-18 2006-10-12 Robert Bosch Gmbh Verwendung eines tribologisch beanspruchten Bauelements
US7311947B2 (en) * 2003-10-10 2007-12-25 Micron Technology, Inc. Laser assisted material deposition
US7892978B2 (en) * 2006-07-10 2011-02-22 Micron Technology, Inc. Electron induced chemical etching for device level diagnosis
US7791055B2 (en) 2006-07-10 2010-09-07 Micron Technology, Inc. Electron induced chemical etching/deposition for enhanced detection of surface defects
US7807062B2 (en) * 2006-07-10 2010-10-05 Micron Technology, Inc. Electron induced chemical etching and deposition for local circuit repair
US7833427B2 (en) 2006-08-14 2010-11-16 Micron Technology, Inc. Electron beam etching device and method
US7791071B2 (en) 2006-08-14 2010-09-07 Micron Technology, Inc. Profiling solid state samples
US7718080B2 (en) 2006-08-14 2010-05-18 Micron Technology, Inc. Electronic beam processing device and method using carbon nanotube emitter
EP2186775A4 (de) * 2007-08-27 2014-08-06 Toyo University Verfahren zur zersetzung einer kohlenstoffhaltigen verbindung, verfahren zur herstellung einer kohlenstoffmikrostruktur und verfahren zur bildung eines dünnen kohlenstofffilms
US20220127721A1 (en) * 2020-10-23 2022-04-28 Applied Materials, Inc. Depositing Low Roughness Diamond Films

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU339134A1 (ru) * 1956-07-10 1980-05-12 Институт Физической Химии Способ наращивани граней алмаза
US3030188A (en) * 1958-07-23 1962-04-17 Union Carbide Corp Synthesis of diamond
US3030187A (en) * 1958-07-23 1962-04-17 Union Carbide Corp Synthesis of diamond
DD221201A1 (de) * 1983-12-09 1985-04-17 Univ Magdeburg Tech Verfahren zur maskenlosen herstellung von kohlenstoffschichten auf substraten
JPS61236691A (ja) * 1985-04-09 1986-10-21 Nec Corp ダイヤモンドの気相合成法
DE3682716D1 (de) * 1985-07-17 1992-01-16 Nec Corp Optisches verfahren zur herstellung von schichten aus der gasphase mit einer starken optischen intensitaet waehrend der beginnphase und vorrichtung dafuer.
US4994301A (en) * 1986-06-30 1991-02-19 Nihon Sinku Gijutsu Kabusiki Kaisha ACVD (chemical vapor deposition) method for selectively depositing metal on a substrate
JPS63288992A (ja) * 1987-05-20 1988-11-25 Sumitomo Electric Ind Ltd ダイヤモンドの気相合成法
JPS63288991A (ja) * 1987-05-20 1988-11-25 Sumitomo Electric Ind Ltd ダイヤモンドの気相合成法
JPH02104668A (ja) * 1988-10-12 1990-04-17 Sumitomo Metal Ind Ltd レーザ光を用いた気相反応析出法
US4948629A (en) * 1989-02-10 1990-08-14 International Business Machines Corporation Deposition of diamond films
JP2708896B2 (ja) * 1989-07-19 1998-02-04 三洋電機株式会社 吸収冷凍機
JPH03185956A (ja) * 1989-12-14 1991-08-13 Tadashi Abe 電話機
US5154945A (en) * 1990-03-05 1992-10-13 Iowa Laser Technology, Inc. Methods using lasers to produce deposition of diamond thin films on substrates

Also Published As

Publication number Publication date
CA2100132A1 (en) 1994-01-10
CA2100132C (en) 1998-10-20
DE69301378T2 (de) 1996-05-30
EP0578232B1 (de) 1996-01-24
JPH0624896A (ja) 1994-02-01
US5387443A (en) 1995-02-07
EP0578232A1 (de) 1994-01-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8328 Change in the person/name/address of the agent

Representative=s name: GROSSE, BOCKHORNI, SCHUMACHER, 81476 MUENCHEN

8339 Ceased/non-payment of the annual fee