DE69332515D1 - Verfahren zur Dielektrikum-Entfernung - Google Patents

Verfahren zur Dielektrikum-Entfernung

Info

Publication number
DE69332515D1
DE69332515D1 DE69332515T DE69332515T DE69332515D1 DE 69332515 D1 DE69332515 D1 DE 69332515D1 DE 69332515 T DE69332515 T DE 69332515T DE 69332515 T DE69332515 T DE 69332515T DE 69332515 D1 DE69332515 D1 DE 69332515D1
Authority
DE
Germany
Prior art keywords
removal process
dielectric removal
dielectric
removal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69332515T
Other languages
English (en)
Other versions
DE69332515T2 (de
Inventor
Fulford, Jr
Mark I Gardner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of DE69332515D1 publication Critical patent/DE69332515D1/de
Application granted granted Critical
Publication of DE69332515T2 publication Critical patent/DE69332515T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Weting (AREA)
DE69332515T 1992-09-18 1993-07-01 Verfahren zur Dielektrikum-Entfernung Expired - Fee Related DE69332515T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/947,313 US5350491A (en) 1992-09-18 1992-09-18 Oxide removal method for improvement of subsequently grown oxides for a twin-tub CMOS process

Publications (2)

Publication Number Publication Date
DE69332515D1 true DE69332515D1 (de) 2003-01-09
DE69332515T2 DE69332515T2 (de) 2003-09-25

Family

ID=25485941

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69332515T Expired - Fee Related DE69332515T2 (de) 1992-09-18 1993-07-01 Verfahren zur Dielektrikum-Entfernung

Country Status (4)

Country Link
US (1) US5350491A (de)
EP (1) EP0592070B1 (de)
JP (1) JPH06204205A (de)
DE (1) DE69332515T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW350122B (en) * 1997-02-14 1999-01-11 Winbond Electronics Corp Method of forming a shallow groove
US7273266B2 (en) * 2004-04-14 2007-09-25 Lexmark International, Inc. Micro-fluid ejection assemblies
CN103426760B (zh) * 2012-05-16 2016-02-10 上海华虹宏力半导体制造有限公司 P型ldmos表面沟道器件的制造工艺
CN110060927A (zh) * 2019-04-22 2019-07-26 上海华力微电子有限公司 半导体结构的制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5661139A (en) * 1979-10-25 1981-05-26 Seiko Epson Corp Manufacture of semiconductor device
US4435896A (en) * 1981-12-07 1984-03-13 Bell Telephone Laboratories, Incorporated Method for fabricating complementary field effect transistor devices
US4507847A (en) * 1982-06-22 1985-04-02 Ncr Corporation Method of making CMOS by twin-tub process integrated with a vertical bipolar transistor
DE3314450A1 (de) * 1983-04-21 1984-10-25 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von hochintegrierten komplementaeren mos-feldeffekttransistorschaltungen
US4539744A (en) * 1984-02-03 1985-09-10 Fairchild Camera & Instrument Corporation Semiconductor planarization process and structures made thereby
US4558508A (en) * 1984-10-15 1985-12-17 International Business Machines Corporation Process of making dual well CMOS semiconductor structure with aligned field-dopings using single masking step
IT1213457B (it) * 1986-07-23 1989-12-20 Catania A Procedimento per la fabbricazione di dispositivi integrati, in particolare dispositivi cmos adoppia sacca.
JPH088298B2 (ja) * 1988-10-04 1996-01-29 沖電気工業株式会社 半導体素子の製造方法

Also Published As

Publication number Publication date
EP0592070A2 (de) 1994-04-13
US5350491A (en) 1994-09-27
EP0592070A3 (en) 1997-10-08
JPH06204205A (ja) 1994-07-22
EP0592070B1 (de) 2002-11-27
DE69332515T2 (de) 2003-09-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee