DE69332496D1 - Verfahren zur Dielektrikim-Entfernung - Google Patents
Verfahren zur Dielektrikim-EntfernungInfo
- Publication number
- DE69332496D1 DE69332496D1 DE69332496T DE69332496T DE69332496D1 DE 69332496 D1 DE69332496 D1 DE 69332496D1 DE 69332496 T DE69332496 T DE 69332496T DE 69332496 T DE69332496 T DE 69332496T DE 69332496 D1 DE69332496 D1 DE 69332496D1
- Authority
- DE
- Germany
- Prior art keywords
- removal procedure
- dielectric removal
- dielectric
- procedure
- removal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/911—Differential oxidation and etching
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Weting (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/947,314 US5350492A (en) | 1992-09-18 | 1992-09-18 | Oxide removal method for improvement of subsequently grown oxides |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69332496D1 true DE69332496D1 (de) | 2003-01-02 |
DE69332496T2 DE69332496T2 (de) | 2003-10-09 |
Family
ID=25485943
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69332496T Expired - Lifetime DE69332496T2 (de) | 1992-09-18 | 1993-07-01 | Verfahren zur Dielektrikim-Entfernung |
Country Status (4)
Country | Link |
---|---|
US (1) | US5350492A (de) |
EP (1) | EP0592071B1 (de) |
JP (1) | JPH06204203A (de) |
DE (1) | DE69332496T2 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3006387B2 (ja) * | 1993-12-15 | 2000-02-07 | 日本電気株式会社 | 半導体装置およびその製造方法 |
US5858843A (en) * | 1996-09-27 | 1999-01-12 | Intel Corporation | Low temperature method of forming gate electrode and gate dielectric |
US6613677B1 (en) * | 1997-11-28 | 2003-09-02 | Arizona Board Of Regents | Long range ordered semiconductor interface phase and oxides |
TW379404B (en) * | 1997-12-31 | 2000-01-11 | United Semiconductor Corp | Manufacturing method of shallow trench isolation |
US7273266B2 (en) * | 2004-04-14 | 2007-09-25 | Lexmark International, Inc. | Micro-fluid ejection assemblies |
US9159808B2 (en) * | 2009-01-26 | 2015-10-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Selective etch-back process for semiconductor devices |
US9018077B2 (en) | 2009-04-30 | 2015-04-28 | Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University | Methods for wafer bonding, and for nucleating bonding nanophases |
WO2013066977A1 (en) | 2011-10-31 | 2013-05-10 | Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University | Methods for wafer bonding and for nucleating bonding nanophases using wet and steam pressurization |
WO2014052476A2 (en) | 2012-09-25 | 2014-04-03 | Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On... | Methods for wafer bonding, and for nucleating bonding nanophases |
CN110323134A (zh) * | 2019-07-11 | 2019-10-11 | 上海遂泰科技有限公司 | 一种功率器件的生产工艺方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4472240A (en) * | 1981-08-21 | 1984-09-18 | Tokyo Shibaura Denki Kabushiki Kaisha | Method for manufacturing semiconductor device |
US4539744A (en) * | 1984-02-03 | 1985-09-10 | Fairchild Camera & Instrument Corporation | Semiconductor planarization process and structures made thereby |
US4713329A (en) * | 1985-07-22 | 1987-12-15 | Data General Corporation | Well mask for CMOS process |
US4713307A (en) * | 1986-04-11 | 1987-12-15 | Xerox Corporation | Organic azo photoconductor imaging members |
JPH0272661A (ja) * | 1988-09-07 | 1990-03-12 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JPH088298B2 (ja) * | 1988-10-04 | 1996-01-29 | 沖電気工業株式会社 | 半導体素子の製造方法 |
-
1992
- 1992-09-18 US US07/947,314 patent/US5350492A/en not_active Expired - Lifetime
-
1993
- 1993-07-01 DE DE69332496T patent/DE69332496T2/de not_active Expired - Lifetime
- 1993-07-01 EP EP93305167A patent/EP0592071B1/de not_active Expired - Lifetime
- 1993-09-06 JP JP5220946A patent/JPH06204203A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
US5350492A (en) | 1994-09-27 |
EP0592071A2 (de) | 1994-04-13 |
EP0592071A3 (en) | 1997-10-08 |
DE69332496T2 (de) | 2003-10-09 |
JPH06204203A (ja) | 1994-07-22 |
EP0592071B1 (de) | 2002-11-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |