DE69416225D1 - Verfahren zur Trockenätzung - Google Patents
Verfahren zur TrockenätzungInfo
- Publication number
- DE69416225D1 DE69416225D1 DE69416225T DE69416225T DE69416225D1 DE 69416225 D1 DE69416225 D1 DE 69416225D1 DE 69416225 T DE69416225 T DE 69416225T DE 69416225 T DE69416225 T DE 69416225T DE 69416225 D1 DE69416225 D1 DE 69416225D1
- Authority
- DE
- Germany
- Prior art keywords
- dry etching
- etching method
- dry
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5227132A JPH0786244A (ja) | 1993-09-13 | 1993-09-13 | ドライエッチング方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69416225D1 true DE69416225D1 (de) | 1999-03-11 |
DE69416225T2 DE69416225T2 (de) | 1999-08-19 |
Family
ID=16855984
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69416225T Expired - Fee Related DE69416225T2 (de) | 1993-09-13 | 1994-09-13 | Verfahren zur Trockenätzung |
Country Status (5)
Country | Link |
---|---|
US (1) | US5994226A (de) |
EP (1) | EP0644582B1 (de) |
JP (1) | JPH0786244A (de) |
KR (1) | KR100272644B1 (de) |
DE (1) | DE69416225T2 (de) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3334370B2 (ja) * | 1994-10-13 | 2002-10-15 | ヤマハ株式会社 | 半導体デバイス |
US6541164B1 (en) * | 1997-10-22 | 2003-04-01 | Applied Materials, Inc. | Method for etching an anti-reflective coating |
US6013582A (en) * | 1997-12-08 | 2000-01-11 | Applied Materials, Inc. | Method for etching silicon oxynitride and inorganic antireflection coatings |
US6291356B1 (en) | 1997-12-08 | 2001-09-18 | Applied Materials, Inc. | Method for etching silicon oxynitride and dielectric antireflection coatings |
DE10000004A1 (de) * | 2000-01-03 | 2001-05-17 | Infineon Technologies Ag | Verfahren zur Herstellung von Leitbahnen |
US6762129B2 (en) * | 2000-04-19 | 2004-07-13 | Matsushita Electric Industrial Co., Ltd. | Dry etching method, fabrication method for semiconductor device, and dry etching apparatus |
DE10054969A1 (de) * | 2000-11-06 | 2002-03-28 | Infineon Technologies Ag | Verfahren zur Strukturierung von Metallschichten |
US6569778B2 (en) * | 2001-06-28 | 2003-05-27 | Hynix Semiconductor Inc. | Method for forming fine pattern in semiconductor device |
CN100451831C (zh) * | 2001-10-29 | 2009-01-14 | 旺宏电子股份有限公司 | 减小图案间隙或开口尺寸的方法 |
US6573177B1 (en) * | 2002-02-19 | 2003-06-03 | Macronix International Co., Ltd. | Protection layer to prevent under-layer damage during deposition |
US7473377B2 (en) | 2002-06-27 | 2009-01-06 | Tokyo Electron Limited | Plasma processing method |
KR100619398B1 (ko) * | 2003-12-26 | 2006-09-11 | 동부일렉트로닉스 주식회사 | 반사방지막을 구비한 레티클 제조방법 |
US7291563B2 (en) * | 2005-08-18 | 2007-11-06 | Micron Technology, Inc. | Method of etching a substrate; method of forming a feature on a substrate; and method of depositing a layer comprising silicon, carbon, and fluorine onto a semiconductor substrate |
JP4630795B2 (ja) * | 2005-10-26 | 2011-02-09 | 株式会社東芝 | パターン形成方法および磁気記録媒体の製造方法 |
US7579282B2 (en) * | 2006-01-13 | 2009-08-25 | Freescale Semiconductor, Inc. | Method for removing metal foot during high-k dielectric/metal gate etching |
US8233248B1 (en) | 2009-09-16 | 2012-07-31 | Western Digital (Fremont), Llc | Method and system for providing a magnetic recording transducer using a line hard mask |
US8871102B2 (en) | 2011-05-25 | 2014-10-28 | Western Digital (Fremont), Llc | Method and system for fabricating a narrow line structure in a magnetic recording head |
US8518832B1 (en) | 2011-06-27 | 2013-08-27 | Western Digital (Fremont), Llc | Process for masking and removal of residue from complex shapes |
US8703397B1 (en) | 2012-03-29 | 2014-04-22 | Western Digital (Fremont), Llc | Method for providing side shields for a magnetic recording transducer |
US9034564B1 (en) | 2013-07-26 | 2015-05-19 | Western Digital (Fremont), Llc | Reader fabrication method employing developable bottom anti-reflective coating |
US9001467B1 (en) | 2014-03-05 | 2015-04-07 | Western Digital (Fremont), Llc | Method for fabricating side shields in a magnetic writer |
US9583356B1 (en) | 2015-09-30 | 2017-02-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for forming semiconductor device structure |
CN107104044A (zh) * | 2017-05-12 | 2017-08-29 | 京东方科技集团股份有限公司 | 一种电极制作方法及阵列基板的制作方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57181378A (en) * | 1981-04-30 | 1982-11-08 | Toshiba Corp | Dry etching method |
DE68923247T2 (de) * | 1988-11-04 | 1995-10-26 | Fujitsu Ltd | Verfahren zum Erzeugen eines Fotolackmusters. |
JPH03110846A (ja) * | 1989-09-25 | 1991-05-10 | Sony Corp | 配線の形成方法 |
JPH03156927A (ja) * | 1989-10-24 | 1991-07-04 | Hewlett Packard Co <Hp> | アルミ・メタライゼーションのパターン形成方法 |
JP3170791B2 (ja) * | 1990-09-11 | 2001-05-28 | ソニー株式会社 | Al系材料膜のエッチング方法 |
JPH04125924A (ja) * | 1990-09-17 | 1992-04-27 | Mitsubishi Electric Corp | プラズマエッチング方法 |
JPH04142738A (ja) * | 1990-10-04 | 1992-05-15 | Sony Corp | ドライエッチング方法 |
JP3094470B2 (ja) * | 1991-01-22 | 2000-10-03 | ソニー株式会社 | ドライエッチング方法 |
JPH04330724A (ja) * | 1991-01-28 | 1992-11-18 | Sony Corp | 配線形成方法 |
US5217570A (en) * | 1991-01-31 | 1993-06-08 | Sony Corporation | Dry etching method |
JPH04288828A (ja) * | 1991-03-18 | 1992-10-13 | Sony Corp | ドライエッチング方法 |
JP3371143B2 (ja) * | 1991-06-03 | 2003-01-27 | ソニー株式会社 | ドライエッチング方法 |
JP3198586B2 (ja) * | 1992-02-14 | 2001-08-13 | ソニー株式会社 | ドライエッチング方法 |
JP3181741B2 (ja) * | 1993-01-11 | 2001-07-03 | 富士通株式会社 | 半導体装置の製造方法 |
-
1993
- 1993-09-13 JP JP5227132A patent/JPH0786244A/ja active Pending
-
1994
- 1994-09-09 KR KR1019940022669A patent/KR100272644B1/ko not_active IP Right Cessation
- 1994-09-13 EP EP94114373A patent/EP0644582B1/de not_active Expired - Lifetime
- 1994-09-13 DE DE69416225T patent/DE69416225T2/de not_active Expired - Fee Related
-
1996
- 1996-09-13 US US08/712,572 patent/US5994226A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR100272644B1 (ko) | 2000-12-01 |
KR950009963A (ko) | 1995-04-26 |
EP0644582B1 (de) | 1999-01-27 |
US5994226A (en) | 1999-11-30 |
JPH0786244A (ja) | 1995-03-31 |
DE69416225T2 (de) | 1999-08-19 |
EP0644582A2 (de) | 1995-03-22 |
EP0644582A3 (de) | 1996-03-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8339 | Ceased/non-payment of the annual fee |