DE69737237D1 - Verfahren zur trockenätzung - Google Patents

Verfahren zur trockenätzung

Info

Publication number
DE69737237D1
DE69737237D1 DE69737237T DE69737237T DE69737237D1 DE 69737237 D1 DE69737237 D1 DE 69737237D1 DE 69737237 T DE69737237 T DE 69737237T DE 69737237 T DE69737237 T DE 69737237T DE 69737237 D1 DE69737237 D1 DE 69737237D1
Authority
DE
Germany
Prior art keywords
drying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69737237T
Other languages
English (en)
Other versions
DE69737237T2 (de
Inventor
Akira Sekiya
Toshiro Yamada
Kuniaki Goto
Tetsuya Takagaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ELECTRONIC IND ASS OF JAPAN
Zeon Corp
Mechanical Social Systems Foundation
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
ELECTRONIC IND ASS OF JAPAN
Agency of Industrial Science and Technology
Zeon Corp
Mechanical Social Systems Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=26564466&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69737237(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by ELECTRONIC IND ASS OF JAPAN, Agency of Industrial Science and Technology, Zeon Corp, Mechanical Social Systems Foundation filed Critical ELECTRONIC IND ASS OF JAPAN
Application granted granted Critical
Publication of DE69737237D1 publication Critical patent/DE69737237D1/de
Publication of DE69737237T2 publication Critical patent/DE69737237T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
DE69737237T 1996-10-30 1997-10-30 Verfahren zur trockenätzung Expired - Lifetime DE69737237T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP30582096 1996-10-30
JP30582096 1996-10-30
JP30581896 1996-10-30
JP30581896 1996-10-30
PCT/JP1997/003968 WO1998019332A1 (fr) 1996-10-30 1997-10-30 Procede de gravure a sec

Publications (2)

Publication Number Publication Date
DE69737237D1 true DE69737237D1 (de) 2007-02-22
DE69737237T2 DE69737237T2 (de) 2007-05-24

Family

ID=26564466

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69737237T Expired - Lifetime DE69737237T2 (de) 1996-10-30 1997-10-30 Verfahren zur trockenätzung

Country Status (6)

Country Link
US (1) US6383403B1 (de)
EP (1) EP0964438B1 (de)
KR (1) KR100490968B1 (de)
DE (1) DE69737237T2 (de)
TW (1) TW403955B (de)
WO (1) WO1998019332A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3905232B2 (ja) * 1997-12-27 2007-04-18 東京エレクトロン株式会社 エッチング方法
US6228774B1 (en) 1998-12-29 2001-05-08 Lam Research Corporation High aspect ratio sub-micron contact etch process in an inductively-coupled plasma processing system
JP4492764B2 (ja) * 1999-05-24 2010-06-30 日本ゼオン株式会社 プラズマ反応用ガス及びその製造方法
US7931820B2 (en) * 2000-09-07 2011-04-26 Daikin Industries, Ltd. Dry etching gas and method for dry etching
KR100874813B1 (ko) * 2000-11-08 2008-12-19 다이킨 고교 가부시키가이샤 드라이 에칭 가스 및 드라이 에칭 방법
KR20040066170A (ko) * 2001-12-13 2004-07-23 어플라이드 머티어리얼스, 인코포레이티드 질화물 숄더에 대해 높은 민감도를 갖는 자기 정렬 콘택에칭
US6920267B2 (en) * 2002-05-13 2005-07-19 Alps Electric Co., Ltd Optical coupling device and manufacturing method thereof
WO2004093178A1 (ja) * 2003-04-11 2004-10-28 Hoya Corporation クロム系薄膜のエッチング方法及びフォトマスクの製造方法
US20060234441A1 (en) * 2005-04-13 2006-10-19 Promos Technologies Inc. Method for preparing a deep trench
JP4749174B2 (ja) * 2006-02-13 2011-08-17 パナソニック株式会社 ドライエッチング方法、微細構造形成方法、モールド及びその製造方法
KR20220083780A (ko) * 2020-02-26 2022-06-20 쇼와 덴코 가부시키가이샤 드라이 에칭 방법, 반도체 소자의 제조 방법, 및 클리닝 방법

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4431477A (en) * 1983-07-05 1984-02-14 Matheson Gas Products, Inc. Plasma etching with nitrous oxide and fluoro compound gas mixture
JP3038950B2 (ja) 1991-02-12 2000-05-08 ソニー株式会社 ドライエッチング方法
JP3198538B2 (ja) 1991-05-24 2001-08-13 ソニー株式会社 ドライエッチング方法
JP2687787B2 (ja) * 1991-10-02 1997-12-08 ソニー株式会社 ドライエッチング方法
JP3208596B2 (ja) * 1992-04-01 2001-09-17 ソニー株式会社 ドライエッチング方法
JP3277394B2 (ja) * 1992-12-04 2002-04-22 ソニー株式会社 半導体装置の製造方法
US5770098A (en) * 1993-03-19 1998-06-23 Tokyo Electron Kabushiki Kaisha Etching process
JP3252518B2 (ja) * 1993-03-19 2002-02-04 ソニー株式会社 ドライエッチング方法
JP3301157B2 (ja) * 1993-05-06 2002-07-15 ソニー株式会社 ドライエッチング方法
JPH07161702A (ja) 1993-10-29 1995-06-23 Applied Materials Inc 酸化物のプラズマエッチング方法
JPH07221068A (ja) * 1994-01-31 1995-08-18 Sony Corp プラズマ装置およびこれを用いたドライエッチング方法
JP3365067B2 (ja) * 1994-02-10 2003-01-08 ソニー株式会社 プラズマ装置およびこれを用いたプラズマ処理方法
JP3011018B2 (ja) 1994-06-06 2000-02-21 株式会社日立製作所 プラズマエッチング方法
JPH0851097A (ja) * 1994-08-05 1996-02-20 Sony Corp プラズマエッチング装置およびプラズマエッチング方法
US6036878A (en) * 1996-02-02 2000-03-14 Applied Materials, Inc. Low density high frequency process for a parallel-plate electrode plasma reactor having an inductive antenna

Also Published As

Publication number Publication date
TW403955B (en) 2000-09-01
WO1998019332A1 (fr) 1998-05-07
DE69737237T2 (de) 2007-05-24
KR20000052977A (ko) 2000-08-25
EP0964438A4 (de) 2000-02-02
US6383403B1 (en) 2002-05-07
EP0964438A1 (de) 1999-12-15
KR100490968B1 (ko) 2005-05-24
EP0964438B1 (de) 2007-01-10

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Legal Events

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