JPS57181378A - Dry etching method - Google Patents
Dry etching methodInfo
- Publication number
- JPS57181378A JPS57181378A JP6592681A JP6592681A JPS57181378A JP S57181378 A JPS57181378 A JP S57181378A JP 6592681 A JP6592681 A JP 6592681A JP 6592681 A JP6592681 A JP 6592681A JP S57181378 A JPS57181378 A JP S57181378A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- etching
- film
- plasma
- gaseous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To improve the fine workability and dimensional controllability of etching by treating resist with the plasma of a gaseous mixture of Freon type gas and H2 as a fore stage of etching in the gaseous plasma contg. chlorine.
CONSTITUTION: A film consisting of Al or polycrystalline Si is used as a film to be etched. Resist patterns are formed thereon to provide a sample 4. This sample is placed on the lower electrode 3 in a dry etching chamber 1, and a gaseous mixture of gaseous Freon such as CF4 and H2 is introduced through a gas introduction hole 1a, and while it is released through a discharge hole 1b, high frequency electric power is applied between parallel electrodes 2 and 3 to induce electric discharge, by which plasma is generated and the resist is treated. Thence, the film is etched by the gaseous plasma contg. Cl such as CCl4. In the fore treatment stage for the etching, an org. film contg. F deposits on the resist, thereby improving the etching resistance of the resist.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6592681A JPS57181378A (en) | 1981-04-30 | 1981-04-30 | Dry etching method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6592681A JPS57181378A (en) | 1981-04-30 | 1981-04-30 | Dry etching method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57181378A true JPS57181378A (en) | 1982-11-08 |
Family
ID=13301058
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6592681A Pending JPS57181378A (en) | 1981-04-30 | 1981-04-30 | Dry etching method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57181378A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5688719A (en) * | 1996-06-07 | 1997-11-18 | Taiwan Semiconductor Manufacturing Company Ltd | Method for plasma hardening of patterned photoresist layers |
US5994226A (en) * | 1993-09-13 | 1999-11-30 | Sony Corporation | Dry etching method |
US7053003B2 (en) * | 2004-10-27 | 2006-05-30 | Lam Research Corporation | Photoresist conditioning with hydrogen ramping |
-
1981
- 1981-04-30 JP JP6592681A patent/JPS57181378A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5994226A (en) * | 1993-09-13 | 1999-11-30 | Sony Corporation | Dry etching method |
US5688719A (en) * | 1996-06-07 | 1997-11-18 | Taiwan Semiconductor Manufacturing Company Ltd | Method for plasma hardening of patterned photoresist layers |
US7053003B2 (en) * | 2004-10-27 | 2006-05-30 | Lam Research Corporation | Photoresist conditioning with hydrogen ramping |
US7682480B2 (en) | 2004-10-27 | 2010-03-23 | Lam Research Corporation | Photoresist conditioning with hydrogen ramping |
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