JPS57181378A - Dry etching method - Google Patents

Dry etching method

Info

Publication number
JPS57181378A
JPS57181378A JP6592681A JP6592681A JPS57181378A JP S57181378 A JPS57181378 A JP S57181378A JP 6592681 A JP6592681 A JP 6592681A JP 6592681 A JP6592681 A JP 6592681A JP S57181378 A JPS57181378 A JP S57181378A
Authority
JP
Japan
Prior art keywords
resist
etching
film
plasma
gaseous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6592681A
Other languages
Japanese (ja)
Inventor
Tsunetoshi Arikado
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP6592681A priority Critical patent/JPS57181378A/en
Publication of JPS57181378A publication Critical patent/JPS57181378A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To improve the fine workability and dimensional controllability of etching by treating resist with the plasma of a gaseous mixture of Freon type gas and H2 as a fore stage of etching in the gaseous plasma contg. chlorine.
CONSTITUTION: A film consisting of Al or polycrystalline Si is used as a film to be etched. Resist patterns are formed thereon to provide a sample 4. This sample is placed on the lower electrode 3 in a dry etching chamber 1, and a gaseous mixture of gaseous Freon such as CF4 and H2 is introduced through a gas introduction hole 1a, and while it is released through a discharge hole 1b, high frequency electric power is applied between parallel electrodes 2 and 3 to induce electric discharge, by which plasma is generated and the resist is treated. Thence, the film is etched by the gaseous plasma contg. Cl such as CCl4. In the fore treatment stage for the etching, an org. film contg. F deposits on the resist, thereby improving the etching resistance of the resist.
COPYRIGHT: (C)1982,JPO&Japio
JP6592681A 1981-04-30 1981-04-30 Dry etching method Pending JPS57181378A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6592681A JPS57181378A (en) 1981-04-30 1981-04-30 Dry etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6592681A JPS57181378A (en) 1981-04-30 1981-04-30 Dry etching method

Publications (1)

Publication Number Publication Date
JPS57181378A true JPS57181378A (en) 1982-11-08

Family

ID=13301058

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6592681A Pending JPS57181378A (en) 1981-04-30 1981-04-30 Dry etching method

Country Status (1)

Country Link
JP (1) JPS57181378A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5688719A (en) * 1996-06-07 1997-11-18 Taiwan Semiconductor Manufacturing Company Ltd Method for plasma hardening of patterned photoresist layers
US5994226A (en) * 1993-09-13 1999-11-30 Sony Corporation Dry etching method
US7053003B2 (en) * 2004-10-27 2006-05-30 Lam Research Corporation Photoresist conditioning with hydrogen ramping

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5994226A (en) * 1993-09-13 1999-11-30 Sony Corporation Dry etching method
US5688719A (en) * 1996-06-07 1997-11-18 Taiwan Semiconductor Manufacturing Company Ltd Method for plasma hardening of patterned photoresist layers
US7053003B2 (en) * 2004-10-27 2006-05-30 Lam Research Corporation Photoresist conditioning with hydrogen ramping
US7682480B2 (en) 2004-10-27 2010-03-23 Lam Research Corporation Photoresist conditioning with hydrogen ramping

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