DE69323827D1 - Diamant-Halbleiter und Verfahren zur Herstellung - Google Patents

Diamant-Halbleiter und Verfahren zur Herstellung

Info

Publication number
DE69323827D1
DE69323827D1 DE69323827T DE69323827T DE69323827D1 DE 69323827 D1 DE69323827 D1 DE 69323827D1 DE 69323827 T DE69323827 T DE 69323827T DE 69323827 T DE69323827 T DE 69323827T DE 69323827 D1 DE69323827 D1 DE 69323827D1
Authority
DE
Germany
Prior art keywords
manufacturing
diamond semiconductor
diamond
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69323827T
Other languages
English (en)
Other versions
DE69323827T2 (de
Inventor
Yoshiki Nishibayashi
Tadashi Tomikawa
Shinichi Sikata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP21419293A external-priority patent/JP3374866B2/ja
Priority claimed from JP21628693A external-priority patent/JP3269510B2/ja
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE69323827D1 publication Critical patent/DE69323827D1/de
Application granted granted Critical
Publication of DE69323827T2 publication Critical patent/DE69323827T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02376—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02527—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
    • H01L21/041—Making n- or p-doped regions
    • H01L21/0415—Making n- or p-doped regions using ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66015—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene
    • H01L29/66037—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66045—Field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE69323827T 1992-09-14 1993-09-10 Diamant-Halbleiter und Verfahren zur Herstellung Expired - Lifetime DE69323827T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP24472392 1992-09-14
JP21419293A JP3374866B2 (ja) 1993-08-30 1993-08-30 半導体ダイヤモンド及びその形成方法
JP21628693A JP3269510B2 (ja) 1992-09-14 1993-08-31 半導体素子

Publications (2)

Publication Number Publication Date
DE69323827D1 true DE69323827D1 (de) 1999-04-15
DE69323827T2 DE69323827T2 (de) 1999-07-08

Family

ID=27329589

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69323827T Expired - Lifetime DE69323827T2 (de) 1992-09-14 1993-09-10 Diamant-Halbleiter und Verfahren zur Herstellung
DE69322565T Expired - Lifetime DE69322565T2 (de) 1992-09-14 1993-09-10 Diamant-Halbleiteranordnung

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69322565T Expired - Lifetime DE69322565T2 (de) 1992-09-14 1993-09-10 Diamant-Halbleiteranordnung

Country Status (3)

Country Link
US (1) US5382809A (de)
EP (2) EP0588260B1 (de)
DE (2) DE69323827T2 (de)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100269924B1 (ko) * 1993-10-08 2000-11-01 하지메 히토추야나기 합성 다이아몬와 그 제조방법
WO1995027806A1 (en) * 1994-04-06 1995-10-19 The Regents Of The University Of California Process to produce diamond films
DE69503285T2 (de) * 1994-04-07 1998-11-05 Sumitomo Electric Industries Diamantwafer und Verfahren zur Herstellung eines Diamantwafers
DE69526129T2 (de) 1994-05-23 2002-08-22 Sumitomo Electric Industries, Ltd. Verfahren und Vorrichtung zum Herstellen eines mit hartem Material bedeckten Halbleiters durch Polieren
EP0699776B1 (de) * 1994-06-09 1999-03-31 Sumitomo Electric Industries, Limited Wafer und Verfahren zur Herstellung eines Wafers
JP3309887B2 (ja) * 1994-08-17 2002-07-29 住友電気工業株式会社 半導体装置
US5686737A (en) * 1994-09-16 1997-11-11 Cree Research, Inc. Self-aligned field-effect transistor for high frequency applications
US5597762A (en) * 1994-09-27 1997-01-28 Nonophase Diamond Technologies, Inc. Field-enhanced diffusion using optical activation
KR0164149B1 (ko) * 1995-03-28 1999-02-01 김주용 타이타늄 카보 나이트라이드층의 개질 방법
US5629246A (en) * 1995-09-27 1997-05-13 Micron Technology, Inc. Method for forming fluorine-doped glass having low concentrations of free fluorine
JP2000512081A (ja) * 1996-06-10 2000-09-12 デ ビアス インダストリアル ダイアモンド デイビジヨン（プロプライエタリイ）リミテツド ダイヤモンドへの接触の製造方法
DE19730083A1 (de) * 1997-07-14 1999-01-21 Rossendorf Forschzent Verfahren zur gezielten Herstellung von n-leitenden Bereichen in Diamantschichten mittels Ionenimplantation
US6858080B2 (en) 1998-05-15 2005-02-22 Apollo Diamond, Inc. Tunable CVD diamond structures
US8591856B2 (en) 1998-05-15 2013-11-26 SCIO Diamond Technology Corporation Single crystal diamond electrochemical electrode
US6582513B1 (en) 1998-05-15 2003-06-24 Apollo Diamond, Inc. System and method for producing synthetic diamond
US6693335B2 (en) 1998-09-01 2004-02-17 Micron Technology, Inc. Semiconductor raised source-drain structure
JP3323850B2 (ja) * 1999-02-26 2002-09-09 キヤノン株式会社 電子放出素子およびこれを用いた電子源およびこれを用いた画像形成装置
JP2004538230A (ja) * 2001-08-08 2004-12-24 アポロ ダイアモンド，インコーポレイティド 合成ダイヤモンドを生成するためのシステム及び方法
US7049374B2 (en) * 2002-07-18 2006-05-23 Chevron U.S.A. Inc. Heterodiamondoids
US7402835B2 (en) * 2002-07-18 2008-07-22 Chevron U.S.A. Inc. Heteroatom-containing diamondoid transistors
GB0227261D0 (en) 2002-11-21 2002-12-31 Element Six Ltd Optical quality diamond material
US7224532B2 (en) * 2002-12-06 2007-05-29 Chevron U.S.A. Inc. Optical uses diamondoid-containing materials
JP2004214607A (ja) * 2002-12-19 2004-07-29 Renesas Technology Corp 半導体装置及びその製造方法
US20050019955A1 (en) * 2003-07-23 2005-01-27 Dahl Jeremy E. Luminescent heterodiamondoids as biological labels
US7312562B2 (en) * 2004-02-04 2007-12-25 Chevron U.S.A. Inc. Heterodiamondoid-containing field emission devices
DE102005013537A1 (de) * 2004-03-24 2005-10-20 Sharp Kk Fotoelektrischer Wandler und Herstellverfahren für einen solchen
US7394103B2 (en) * 2004-09-13 2008-07-01 Uchicago Argonne, Llc All diamond self-aligned thin film transistor
US8641999B2 (en) 2005-07-11 2014-02-04 SCIO Diamond Technology Corporation Carbon grit
US7863656B2 (en) * 2006-05-12 2011-01-04 Cree Sweden Ab Semiconductor device
GB201020326D0 (en) * 2010-12-01 2011-01-12 Diamond Microwave Devices Ltd A field effect transistor
CN110600366B (zh) * 2019-09-20 2021-06-18 西安交通大学 (100)晶向金刚石n沟道结型场效应晶体管及其制备方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2614868B2 (ja) * 1987-09-09 1997-05-28 導電性無機化合物技術研究組合 電界効果トランジスタの製造法
JP2593898B2 (ja) * 1987-11-30 1997-03-26 住友電気工業株式会社 半導体素子
JP2590161B2 (ja) * 1987-12-15 1997-03-12 導電性無機化合物技術研究組合 Ｍｉｓ型電界効果トランジスタの製造法
JP2813023B2 (ja) * 1990-03-13 1998-10-22 株式会社神戸製鋼所 Ｍｉｓ型ダイヤモンド電界効果トランジスタ
JP2836790B2 (ja) * 1991-01-08 1998-12-14 株式会社神戸製鋼所 ダイヤモンド薄膜へのオーミック電極形成方法
JP3077206B2 (ja) * 1991-01-10 2000-08-14 住友電気工業株式会社 ダイヤモンド膜及びその製造方法
US5173761A (en) * 1991-01-28 1992-12-22 Kobe Steel Usa Inc., Electronic Materials Center Semiconducting polycrystalline diamond electronic devices employing an insulating diamond layer
JPH0815160B2 (ja) * 1991-03-29 1996-02-14 株式会社神戸製鋼所 ダイヤモンドショットキーゲート型電界効果トランジスタ
JP3123127B2 (ja) * 1991-07-22 2001-01-09 住友電気工業株式会社 電界効果型トランジスタ
US5254862A (en) * 1991-08-14 1993-10-19 Kobe Steel U.S.A., Inc. Diamond field-effect transistor with a particular boron distribution profile

Also Published As

Publication number Publication date
EP0594994A2 (de) 1994-05-04
DE69322565D1 (de) 1999-01-28
US5382809A (en) 1995-01-17
EP0588260A2 (de) 1994-03-23
EP0594994A3 (de) 1994-10-05
EP0588260A3 (de) 1994-10-19
EP0588260B1 (de) 1998-12-16
DE69322565T2 (de) 1999-04-29
DE69323827T2 (de) 1999-07-08
EP0594994B1 (de) 1999-03-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: GROSSE, BOCKHORNI, SCHUMACHER, 81476 MUENCHEN

8320 Willingness to grant licences declared (paragraph 23)
8328 Change in the person/name/address of the agent

Representative=s name: GROSSE, SCHUMACHER, KNAUER, VON HIRSCHHAUSEN, 8033