DE69228787D1 - Verfahren und Anlage zur Herstellung von Halbleitervorrichtungen - Google Patents

Verfahren und Anlage zur Herstellung von Halbleitervorrichtungen

Info

Publication number
DE69228787D1
DE69228787D1 DE69228787T DE69228787T DE69228787D1 DE 69228787 D1 DE69228787 D1 DE 69228787D1 DE 69228787 T DE69228787 T DE 69228787T DE 69228787 T DE69228787 T DE 69228787T DE 69228787 D1 DE69228787 D1 DE 69228787D1
Authority
DE
Germany
Prior art keywords
plant
semiconductor devices
manufacturing semiconductor
manufacturing
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69228787T
Other languages
English (en)
Inventor
Mikio Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
F T L CO
Original Assignee
F T L CO
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP4264183A external-priority patent/JPH0689867A/ja
Application filed by F T L CO filed Critical F T L CO
Application granted granted Critical
Publication of DE69228787D1 publication Critical patent/DE69228787D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/12—Heating of the reaction chamber
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00—Furnaces of a kind not covered by any preceding group
    • F27B17/0016—Chamber type furnaces
    • F27B17/0025—Especially adapted for treating semiconductor wafers
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D3/00—Charging; Discharging; Manipulation of charge
    • F27D2003/0034—Means for moving, conveying, transporting the charge in the furnace or in the charging facilities
    • F27D2003/0075—Charging or discharging vertically, e.g. through a bottom opening

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE69228787T 1991-10-23 1992-10-23 Verfahren und Anlage zur Herstellung von Halbleitervorrichtungen Expired - Lifetime DE69228787D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP30271891 1991-10-23
JP6931992 1992-02-20
JP4264183A JPH0689867A (ja) 1992-09-07 1992-09-07 加熱装置、半導体製造装置、加熱方法及び半導体製造方法

Publications (1)

Publication Number Publication Date
DE69228787D1 true DE69228787D1 (de) 1999-05-06

Family

ID=27300015

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69228787T Expired - Lifetime DE69228787D1 (de) 1991-10-23 1992-10-23 Verfahren und Anlage zur Herstellung von Halbleitervorrichtungen

Country Status (4)

Country Link
US (2) US5387557A (de)
EP (1) EP0538874B1 (de)
KR (1) KR970000193B1 (de)
DE (1) DE69228787D1 (de)

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GB2298314A (en) * 1994-08-12 1996-08-28 Samsung Electronics Co Ltd Apparatus for rapid thermal processing
JPH0870008A (ja) * 1994-08-12 1996-03-12 Samsung Electron Co Ltd 高速熱処理方法および処理装置
JPH08186081A (ja) * 1994-12-29 1996-07-16 F T L:Kk 半導体装置の製造方法及び半導体装置の製造装置
JP2701767B2 (ja) * 1995-01-27 1998-01-21 日本電気株式会社 気相成長装置
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US6002109A (en) 1995-07-10 1999-12-14 Mattson Technology, Inc. System and method for thermal processing of a semiconductor substrate
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US6133550A (en) * 1996-03-22 2000-10-17 Sandia Corporation Method and apparatus for thermal processing of semiconductor substrates
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JP3084232B2 (ja) * 1996-06-04 2000-09-04 イートン コーポレーション 縦型加熱処理装置
US5763322A (en) * 1996-07-08 1998-06-09 Micron Technology, Inc. Method of annealing film stacks and device having stack produced by same
US6198074B1 (en) 1996-09-06 2001-03-06 Mattson Technology, Inc. System and method for rapid thermal processing with transitional heater
US6096998A (en) 1996-09-17 2000-08-01 Micron Technology, Inc. Method and apparatus for performing thermal reflow operations under high gravity conditions
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US6051512A (en) * 1997-04-11 2000-04-18 Steag Rtp Systems Apparatus and method for rapid thermal processing (RTP) of a plurality of semiconductor wafers
JP2973971B2 (ja) * 1997-06-05 1999-11-08 日本電気株式会社 熱処理装置及び薄膜の形成方法
US5900177A (en) * 1997-06-11 1999-05-04 Eaton Corporation Furnace sidewall temperature control system
JPH11111998A (ja) * 1997-10-06 1999-04-23 Sanyo Electric Co Ltd 薄膜トランジスタの製造方法
EP0977249A3 (de) * 1998-07-31 2003-07-16 International Business Machines Corporation Verbesserte Methode zur Abscheidung eines Arsensilikatglasfilms auf einer Siliziumstruktur
JP4551515B2 (ja) * 1998-10-07 2010-09-29 株式会社日立国際電気 半導体製造装置およびその温度制御方法
WO2000039840A1 (de) * 1998-12-17 2000-07-06 Vishay Semiconductor Itzehoe Gmbh Verfahren zur bor-dotierung von wafern unter einsatz eines vertikalofensystems
DE19954021C2 (de) * 1998-12-17 2002-10-31 Fraunhofer Ges Forschung Verfahren zur Bor-Dotierung von Wafern unter Einsatz eines Vertikalofensystems
US6303411B1 (en) 1999-05-03 2001-10-16 Vortek Industries Ltd. Spatially resolved temperature measurement and irradiance control
JP4426024B2 (ja) * 1999-09-02 2010-03-03 東京エレクトロン株式会社 熱処理装置の温度校正方法
US6342691B1 (en) 1999-11-12 2002-01-29 Mattson Technology, Inc. Apparatus and method for thermal processing of semiconductor substrates
US6345150B1 (en) 1999-11-30 2002-02-05 Wafermasters, Inc. Single wafer annealing oven
US6246031B1 (en) 1999-11-30 2001-06-12 Wafermasters, Inc. Mini batch furnace
US6303906B1 (en) 1999-11-30 2001-10-16 Wafermasters, Inc. Resistively heated single wafer furnace
JP3479020B2 (ja) 2000-01-28 2003-12-15 東京エレクトロン株式会社 熱処理装置
US6488778B1 (en) 2000-03-16 2002-12-03 International Business Machines Corporation Apparatus and method for controlling wafer environment between thermal clean and thermal processing
KR100332314B1 (ko) * 2000-06-24 2002-04-12 서성기 박막증착용 반응용기
KR100444149B1 (ko) * 2000-07-22 2004-08-09 주식회사 아이피에스 Ald 박막증착설비용 클리닝방법
US6594446B2 (en) * 2000-12-04 2003-07-15 Vortek Industries Ltd. Heat-treating methods and systems
GB2406711B (en) * 2000-12-04 2005-06-08 Vortek Ind Ltd Heat-treating methods and systems
DE60108078T2 (de) 2001-04-12 2005-12-01 Infineon Technologies Sc300 Gmbh & Co. Ohg Heizungsanlage und Verfahren zur Heizung für einen Reaktor
US6753506B2 (en) * 2001-08-23 2004-06-22 Axcelis Technologies System and method of fast ambient switching for rapid thermal processing
AU2002350358A1 (en) * 2001-12-26 2003-07-30 Vortek Indusries Ltd. Temperature measurement and heat-treating methods and systems
US6713127B2 (en) * 2001-12-28 2004-03-30 Applied Materials, Inc. Methods for silicon oxide and oxynitride deposition using single wafer low pressure CVD
US6727194B2 (en) * 2002-08-02 2004-04-27 Wafermasters, Inc. Wafer batch processing system and method
JP4988202B2 (ja) 2002-12-20 2012-08-01 マトソン テクノロジー カナダ インコーポレイテッド 工作物の支持及び熱処理の方法とシステム
JP4257576B2 (ja) * 2003-03-25 2009-04-22 ローム株式会社 成膜装置
JP5630935B2 (ja) * 2003-12-19 2014-11-26 マトソン テクノロジー、インコーポレイテッド 工作物の熱誘起運動を抑制する機器及び装置
AU2006330816B2 (en) * 2005-12-23 2012-05-24 Cook Medical Technologies Llc Prosthesis deployment system
WO2012108882A1 (en) * 2011-02-11 2012-08-16 Alliance For Sustainable Energy, Llc Wafer screening device and methods for wafer screening
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US9070590B2 (en) 2008-05-16 2015-06-30 Mattson Technology, Inc. Workpiece breakage prevention method and apparatus
JP5732284B2 (ja) * 2010-08-27 2015-06-10 株式会社ニューフレアテクノロジー 成膜装置および成膜方法
CN103000496B (zh) * 2013-01-08 2015-04-15 河南诺巴迪材料科技有限公司 快速升降温退火炉
KR102063607B1 (ko) 2013-03-12 2020-02-11 삼성전자주식회사 웨이퍼 처리 장치
US10741426B2 (en) * 2017-09-27 2020-08-11 Taiwan Semiconductor Manufacturing Co., Ltd. Method for controlling temperature of furnace in semiconductor fabrication process
CN108844373A (zh) * 2018-07-18 2018-11-20 伊之密机器人自动化科技(苏州)有限公司 废料提升机

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Also Published As

Publication number Publication date
KR970000193B1 (ko) 1997-01-06
US5445676A (en) 1995-08-29
EP0538874A1 (de) 1993-04-28
KR930008998A (ko) 1993-05-22
EP0538874B1 (de) 1999-03-31
US5387557A (en) 1995-02-07

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Legal Events

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8332 No legal effect for de