DE69221379D1 - Halbleiter-Speicherbauteil und Verfahren zur Herstellung desselben - Google Patents

Halbleiter-Speicherbauteil und Verfahren zur Herstellung desselben

Info

Publication number
DE69221379D1
DE69221379D1 DE69221379T DE69221379T DE69221379D1 DE 69221379 D1 DE69221379 D1 DE 69221379D1 DE 69221379 T DE69221379 T DE 69221379T DE 69221379 T DE69221379 T DE 69221379T DE 69221379 D1 DE69221379 D1 DE 69221379D1
Authority
DE
Germany
Prior art keywords
manufacturing
same
memory device
semiconductor memory
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69221379T
Other languages
English (en)
Other versions
DE69221379T2 (de
Inventor
Naoki Kasai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE69221379D1 publication Critical patent/DE69221379D1/de
Application granted granted Critical
Publication of DE69221379T2 publication Critical patent/DE69221379T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/14—Word line organisation; Word line lay-out
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
DE69221379T 1991-05-24 1992-05-21 Halbleiter-Speicherbauteil und Verfahren zur Herstellung desselben Expired - Lifetime DE69221379T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11968191A JP3186084B2 (ja) 1991-05-24 1991-05-24 半導体メモリー装置

Publications (2)

Publication Number Publication Date
DE69221379D1 true DE69221379D1 (de) 1997-09-11
DE69221379T2 DE69221379T2 (de) 1998-01-15

Family

ID=14767417

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69221379T Expired - Lifetime DE69221379T2 (de) 1991-05-24 1992-05-21 Halbleiter-Speicherbauteil und Verfahren zur Herstellung desselben

Country Status (5)

Country Link
US (1) US5381030A (de)
EP (1) EP0514905B1 (de)
JP (1) JP3186084B2 (de)
KR (1) KR960000958B1 (de)
DE (1) DE69221379T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5418175A (en) * 1994-05-06 1995-05-23 United Microelectronics Corporation Process for flat-cell mask ROM integrated circuit
JPH08273362A (ja) * 1995-03-30 1996-10-18 Nec Ic Microcomput Syst Ltd 半導体記憶装置
JP3207347B2 (ja) * 1996-01-26 2001-09-10 シャープ株式会社 半導体装置
FR2749434B1 (fr) * 1996-05-31 1998-09-04 Dolphin Integration Sa Matrice de memoire rom compacte
KR100614660B1 (ko) * 2005-06-01 2006-08-22 삼성전자주식회사 반도체 기억 장치의 데이터 라인 및 그 형성방법
JP4934325B2 (ja) * 2006-02-17 2012-05-16 株式会社フジクラ プリント配線板の接続構造及びプリント配線板の接続方法
JP4364226B2 (ja) 2006-09-21 2009-11-11 株式会社東芝 半導体集積回路
JP4791999B2 (ja) * 2007-04-20 2011-10-12 株式会社東芝 半導体装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4212026A (en) * 1977-06-24 1980-07-08 International Business Machines Corporation Merged array PLA device, circuit, fabrication method and testing technique
USRE32236E (en) * 1979-12-26 1986-08-26 International Business Machines Corporation One device field effect transistor (FET) AC stable random access memory (RAM) array
JPS57205893A (en) * 1981-06-10 1982-12-17 Toshiba Corp Signal propagating device
JPS5866343A (ja) * 1981-10-16 1983-04-20 Hitachi Ltd 半導体集積回路装置
US4541076A (en) * 1982-05-13 1985-09-10 Storage Technology Corporation Dual port CMOS random access memory
JPH0682801B2 (ja) * 1983-12-23 1994-10-19 株式会社日立製作所 半導体記憶装置とそのレイアウト方法
JPS6211262A (ja) * 1985-07-08 1987-01-20 Nec Ic Microcomput Syst Ltd 半導体記憶装置
JPS62249478A (ja) * 1986-04-23 1987-10-30 Hitachi Vlsi Eng Corp 半導体記憶装置
JP2511415B2 (ja) * 1986-06-27 1996-06-26 沖電気工業株式会社 半導体装置
JPS63278248A (ja) * 1987-03-13 1988-11-15 Fujitsu Ltd ゲ−トアレイの基本セル
JPS63293966A (ja) * 1987-05-27 1988-11-30 Hitachi Ltd 半導体集積回路装置
JP2566958B2 (ja) * 1987-05-30 1996-12-25 株式会社東芝 スタンダ−ドセル方式の半導体集積回路
JP2547615B2 (ja) * 1988-06-16 1996-10-23 三菱電機株式会社 読出専用半導体記憶装置および半導体記憶装置
JPH02281497A (ja) * 1989-04-21 1990-11-19 Nec Corp ダイナミック型半導体記憶素子
JPH0382077A (ja) * 1989-08-24 1991-04-08 Nec Corp 半導体メモリ装置

Also Published As

Publication number Publication date
DE69221379T2 (de) 1998-01-15
US5381030A (en) 1995-01-10
KR920022512A (ko) 1992-12-19
JPH04346470A (ja) 1992-12-02
JP3186084B2 (ja) 2001-07-11
KR960000958B1 (ko) 1996-01-15
EP0514905B1 (de) 1997-08-06
EP0514905A1 (de) 1992-11-25

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Legal Events

Date Code Title Description
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