DE69413276D1 - Halbleiteranordnung mit isoliertem Gate und Verfahren zur Herstellung derselben - Google Patents

Halbleiteranordnung mit isoliertem Gate und Verfahren zur Herstellung derselben

Info

Publication number
DE69413276D1
DE69413276D1 DE69413276T DE69413276T DE69413276D1 DE 69413276 D1 DE69413276 D1 DE 69413276D1 DE 69413276 T DE69413276 T DE 69413276T DE 69413276 T DE69413276 T DE 69413276T DE 69413276 D1 DE69413276 D1 DE 69413276D1
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor device
same
insulated gate
gate semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69413276T
Other languages
English (en)
Other versions
DE69413276T2 (de
Inventor
Yoshifumi Tomomatsu
Hiroshi Yamaguchi
Hiroyasu Hagino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP4801493A external-priority patent/JP2949001B2/ja
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE69413276D1 publication Critical patent/DE69413276D1/de
Publication of DE69413276T2 publication Critical patent/DE69413276T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
    • H01L29/66333—Vertical insulated gate bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
DE69413276T 1993-03-09 1994-03-08 Halbleiteranordnung mit isoliertem Gate und Verfahren zur Herstellung derselben Expired - Lifetime DE69413276T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4801493A JP2949001B2 (ja) 1992-03-18 1993-03-09 ゲート絶縁型半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
DE69413276D1 true DE69413276D1 (de) 1998-10-22
DE69413276T2 DE69413276T2 (de) 1999-06-02

Family

ID=12791459

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69413276T Expired - Lifetime DE69413276T2 (de) 1993-03-09 1994-03-08 Halbleiteranordnung mit isoliertem Gate und Verfahren zur Herstellung derselben

Country Status (4)

Country Link
US (1) US5489788A (de)
EP (1) EP0615293B1 (de)
KR (1) KR0165909B1 (de)
DE (1) DE69413276T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0841702A1 (de) * 1996-11-11 1998-05-13 STMicroelectronics S.r.l. Lateraler oder vertikaler DMOSFET mit hoher Durchbruchspannung
DE19654113A1 (de) * 1996-12-23 1998-06-25 Asea Brown Boveri Verfahren zum Herstellen eines MOS-gesteuerten Leistungshalbleiterbauelements
KR100486347B1 (ko) * 1997-08-20 2006-04-21 페어차일드코리아반도체 주식회사 절연게이트양극성트랜지스터
DE19945639A1 (de) * 1999-09-23 2001-04-05 Abb Semiconductors Ag Bipolartransistor mit isolierter Gateelektrode (IGBT)
US6683348B1 (en) * 2000-05-22 2004-01-27 Mitsubishi Denki Kabushiki Kaisha Insulated gate bipolar semiconductor device transistor with a ladder shaped emitter
JP4198302B2 (ja) * 2000-06-07 2008-12-17 三菱電機株式会社 半導体装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4466176A (en) * 1982-08-09 1984-08-21 General Electric Company Process for manufacturing insulated-gate semiconductor devices with integral shorts
US4672407A (en) * 1984-05-30 1987-06-09 Kabushiki Kaisha Toshiba Conductivity modulated MOSFET
US5286984A (en) * 1984-05-30 1994-02-15 Kabushiki Kaisha Toshiba Conductivity modulated MOSFET
JPS62232167A (ja) * 1986-04-02 1987-10-12 Nissan Motor Co Ltd 半導体装置
JPS62283669A (ja) * 1986-06-02 1987-12-09 Toshiba Corp 導電変調型ｍｏｓｆｅｔ
JP2513640B2 (ja) * 1986-09-17 1996-07-03 株式会社東芝 導電変調型ｍｏｓｆｅｔ
JP2732495B2 (ja) * 1987-09-24 1998-03-30 株式会社日立製作所 絶縁ゲート型半導体装置
JPH01293669A (ja) * 1988-05-23 1989-11-27 Nec Corp 縦型ｍｏｓ電界効果トランジスタ
JPH0783122B2 (ja) * 1988-12-01 1995-09-06 富士電機株式会社 半導体装置の製造方法
JPH02278880A (ja) * 1989-04-20 1990-11-15 Nippondenso Co Ltd 絶縁ゲート型バイポーラトランジスタ
JPH02312280A (ja) * 1989-05-26 1990-12-27 Mitsubishi Electric Corp 絶縁ゲート型バイポーラトランジスタ
US5321281A (en) * 1992-03-18 1994-06-14 Mitsubishi Denki Kabushiki Kaisha Insulated gate semiconductor device and method of fabricating same

Also Published As

Publication number Publication date
US5489788A (en) 1996-02-06
KR940022886A (ko) 1994-10-21
DE69413276T2 (de) 1999-06-02
KR0165909B1 (ko) 1998-12-15
EP0615293B1 (de) 1998-09-16
EP0615293A1 (de) 1994-09-14

Similar Documents

Publication Publication Date Title
DE69530232D1 (de) Halbleiteranordnung mit isoliertem Gate und Verfahren zur Herstellung derselben
DE69628633D1 (de) Halbleiteranordnung mit isoliertem Gate und Verfahren zur Herstellung
DE69629069D1 (de) Bipolare Halbleiteranordnung mit isoliertem Gate und Verfahren zur Herstellung
DE69634594D1 (de) Halbleiterbauelement mit isoliertem Gate und Verfahren zu seiner Herstellung
DE69316810D1 (de) SiGe-SOI-MOSFET und Verfahren zur Herstellung
DE69034157D1 (de) Bipolartransistor mit isolierter Gate-Elektrode und Verfahren zur Herstellung
DE69413860T2 (de) Transistoren und Verfahren zur Herstellung
DE69431023D1 (de) Halbleiteraufbau und Verfahren zur Herstellung
DE69314368D1 (de) Halbleiterbauelement mit isoliertem Gate und dessen Herstellungsverfahren
DE69320572T2 (de) Dünnfilm-Halbleiteranordnung und Verfahren zur ihrer Herstellung
DE69328985D1 (de) Gate-gesteuerte Diode und Verfahren zur Herstellung derselben
DE69229314T2 (de) Halbleiteranordnung und Verfahren zur Herstellung
DE69430091D1 (de) Halbleiterbauelement mit LC-Element und Verfahren zur Herstellung
DE69014454T2 (de) Hochspannungs-Halbleiteranordnung und Verfahren zur Herstellung.
DE69227290D1 (de) Halbleiteranordnung und Verfahren zur Herstellung
DE69528683T2 (de) Halbleiterbauteil und Verfahren zur Herstellung desselben
DE69426410T2 (de) Halbleitervorrichtung mit Lötstellen und Verfahren zur Herstellung
DE69416619D1 (de) Halbleiterspeicheranordnung und Verfahren zur Herstellung
DE69413276T2 (de) Halbleiteranordnung mit isoliertem Gate und Verfahren zur Herstellung derselben
DE69221379D1 (de) Halbleiter-Speicherbauteil und Verfahren zur Herstellung desselben
DE69417933D1 (de) Verfahren und Vorrichtung zur Herstellung von Halbleitervorrichtungen
DE69321049D1 (de) Halbleiteranordnung mit Seitenwand-Gate und Verfahren zur Herstellung
DE69520121D1 (de) Halbleiteranordnung mit einem Isolationsgraben und Verfahren zur Herstellung
DE69128829D1 (de) Feldeffekttransistor und Verfahren zur Herstellung
DE69511992T2 (de) Halbleiteranordnung und Verfahren zur Herstellung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)