DE68926986D1 - Halbleiterlaser und Verfahren zur Herstellung desselben - Google Patents

Halbleiterlaser und Verfahren zur Herstellung desselben

Info

Publication number
DE68926986D1
DE68926986D1 DE68926986T DE68926986T DE68926986D1 DE 68926986 D1 DE68926986 D1 DE 68926986D1 DE 68926986 T DE68926986 T DE 68926986T DE 68926986 T DE68926986 T DE 68926986T DE 68926986 D1 DE68926986 D1 DE 68926986D1
Authority
DE
Germany
Prior art keywords
manufacturing
same
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68926986T
Other languages
English (en)
Other versions
DE68926986T2 (de
Inventor
Toshiaki Tanaka
Takashi Kajimura
Toshihiro Kawano
Yuichi Ono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP63222310A external-priority patent/JP2723921B2/ja
Priority claimed from JP63228670A external-priority patent/JP2723924B2/ja
Priority claimed from JP26148588A external-priority patent/JPH02109387A/ja
Priority claimed from JP139289A external-priority patent/JPH0394490A/ja
Priority claimed from JP4650389A external-priority patent/JP2912624B2/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE68926986D1 publication Critical patent/DE68926986D1/de
Application granted granted Critical
Publication of DE68926986T2 publication Critical patent/DE68926986T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0658—Self-pulsating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
    • H01S5/2219—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties absorbing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Nanotechnology (AREA)
  • Geometry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
DE68926986T 1988-09-07 1989-04-17 Halbleiterlaser und Verfahren zur Herstellung desselben Expired - Fee Related DE68926986T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP63222310A JP2723921B2 (ja) 1988-09-07 1988-09-07 半導体レーザ素子
JP63228670A JP2723924B2 (ja) 1988-09-14 1988-09-14 半導体レーザ素子
JP26148588A JPH02109387A (ja) 1988-10-19 1988-10-19 半導体レーザ素子及びその製造方法
JP139289A JPH0394490A (ja) 1989-01-10 1989-01-10 半導体レーザ素子
JP4650389A JP2912624B2 (ja) 1989-03-01 1989-03-01 半導体レーザ素子

Publications (2)

Publication Number Publication Date
DE68926986D1 true DE68926986D1 (de) 1996-09-26
DE68926986T2 DE68926986T2 (de) 1997-02-20

Family

ID=27518109

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68926986T Expired - Fee Related DE68926986T2 (de) 1988-09-07 1989-04-17 Halbleiterlaser und Verfahren zur Herstellung desselben

Country Status (3)

Country Link
US (1) US4961197A (de)
EP (1) EP0358842B1 (de)
DE (1) DE68926986T2 (de)

Families Citing this family (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2686306B2 (ja) * 1989-02-01 1997-12-08 三菱電機株式会社 半導体レーザ装置とその製造方法
JPH02203586A (ja) * 1989-02-01 1990-08-13 Mitsubishi Electric Corp 半導体レーザ装置とその製造方法
JP2809691B2 (ja) * 1989-04-28 1998-10-15 株式会社東芝 半導体レーザ
FR2649549B1 (fr) * 1989-07-04 1991-09-20 Thomson Csf Laser semiconducteur a puits quantique
US5065404A (en) * 1989-07-12 1991-11-12 Kabushiki Kaisha Toshiba Transverse-mode oscillation semiconductor laser device
JPH03131083A (ja) * 1989-10-17 1991-06-04 Mitsubishi Electric Corp 半導体レーザ装置の製造方法
JP2808562B2 (ja) * 1990-02-27 1998-10-08 キヤノン株式会社 半導体光増幅素子
JP2553731B2 (ja) * 1990-04-13 1996-11-13 三菱電機株式会社 半導体光素子
US5138626A (en) * 1990-09-12 1992-08-11 Hughes Aircraft Company Ridge-waveguide buried-heterostructure laser and method of fabrication
JP2656397B2 (ja) * 1991-04-09 1997-09-24 三菱電機株式会社 可視光レーザダイオードの製造方法
JP2863648B2 (ja) * 1991-04-16 1999-03-03 三菱電機株式会社 可視光半導体レーザ
US5238867A (en) * 1991-07-09 1993-08-24 Posco Educational Foundation Method for preparing an optical switching device having multiple quantum wells
US5189679A (en) * 1991-09-06 1993-02-23 The Boeing Company Strained quantum well laser for high temperature operation
US5406574A (en) * 1991-10-23 1995-04-11 Kabushiki Kaisha Toshiba Semiconductor laser device
US5416790A (en) * 1992-11-06 1995-05-16 Sanyo Electric Co., Ltd. Semiconductor laser with a self-sustained pulsation
JPH06268314A (ja) * 1993-03-11 1994-09-22 Nec Corp 半導体レーザ
JPH0715082A (ja) * 1993-06-24 1995-01-17 Mitsubishi Electric Corp 半導体パルセーションレーザ
JPH07170022A (ja) * 1993-12-16 1995-07-04 Mitsubishi Electric Corp 半導体レーザ装置
JP3322512B2 (ja) * 1994-04-28 2002-09-09 三洋電機株式会社 半導体レーザ素子の設計方法
JPH0846283A (ja) * 1994-07-28 1996-02-16 Mitsubishi Electric Corp 半導体レーザの製造方法
US6072817A (en) * 1995-03-31 2000-06-06 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device and optical disk apparatus using the same
US5519362A (en) * 1995-08-23 1996-05-21 The United States Of America As Represented By The Secretary Of The Air Force Optical current controlled oscillators
JP2757913B2 (ja) * 1996-01-17 1998-05-25 日本電気株式会社 半導体レーザ
US6055255A (en) * 1996-02-01 2000-04-25 Sharp Kabushiki Kaisha Semiconductor laser device and method for producing the same
TW342545B (en) * 1996-03-28 1998-10-11 Sanyo Electric Co Semiconductor laser element and method for designing same
US5850411A (en) * 1996-09-17 1998-12-15 Sdl, Inc Transverse electric (TE) polarization mode AlGaInP/GaAs red laser diodes, especially with self-pulsating operation
EP1022825B1 (de) 1997-03-07 2006-05-03 Sharp Kabushiki Kaisha Lichtemittierendes galliumnitridhalbleiterelement mit einer aktiven schicht mit multiplexquantentrogstruktur und halbleiterlaserlichtquellenvorrichtung
JP3045104B2 (ja) * 1997-05-21 2000-05-29 日本電気株式会社 半導体レーザ
JP3780650B2 (ja) * 1997-08-05 2006-05-31 ソニー株式会社 半導体レーザの平均光出力の設定方法および半導体レーザの高周波電流の重畳条件の設定方法
JP4387472B2 (ja) 1998-02-18 2009-12-16 三菱電機株式会社 半導体レーザ
US6240114B1 (en) * 1998-08-07 2001-05-29 Agere Systems Optoelectronics Guardian Corp. Multi-quantum well lasers with selectively doped barriers
US6396861B1 (en) * 1999-01-11 2002-05-28 The Furukawa Electric Co., Ltd. N-type modulation-doped multi quantum well semiconductor laser device
TW459371B (en) * 1999-12-02 2001-10-11 United Epitaxy Co Ltd Quantum well device with anti-electrostatic discharge and the manufacturing method thereof
JP2001230493A (ja) * 2000-02-21 2001-08-24 Sony Corp 半導体レーザ発光装置
US6973109B2 (en) * 2000-02-28 2005-12-06 Fuji Photo Film Co., Ltd. Semiconductor laser device having strain buffer layer between compressive-strain quantum well layer and tensile-strain barrier layer
US6816531B1 (en) 2000-03-03 2004-11-09 Jds Uniphase Corporation High-power, kink-free, single mode laser diodes
JP2001274503A (ja) * 2000-03-28 2001-10-05 Nec Corp 自励発振型半導体レーザ
US6731663B1 (en) * 2000-03-28 2004-05-04 The Furukawa Electric Co., Ltd. Ridge waveguide type semiconductor laser device
US6914922B2 (en) * 2000-07-10 2005-07-05 Sanyo Electric Co., Ltd. Nitride based semiconductor light emitting device and nitride based semiconductor laser device
CA2415700A1 (en) * 2000-07-10 2002-01-17 Massachusetts Institute Of Technology Graded index waveguide
JP4599687B2 (ja) * 2000-08-08 2010-12-15 ソニー株式会社 レーザダイオード、半導体発光装置および製造方法
JP2002111135A (ja) * 2000-10-02 2002-04-12 Furukawa Electric Co Ltd:The 半導体レーザ素子、それを用いた光ファイバ増幅器用励起光源
US6912237B2 (en) * 2001-02-06 2005-06-28 The Furukawa Electric Co., Ltd. Semiconductor laser module and semiconductor laser device having light feedback function
US6996149B2 (en) * 2002-02-19 2006-02-07 The Furukawa Electric Co., Ltd. Semiconductor laser device and semiconductor laser module
US7548567B2 (en) * 2004-04-02 2009-06-16 Vladimir Kupershmidt Analog transmitter using an external cavity laser (ECL)
US7842527B2 (en) * 2006-12-11 2010-11-30 The Regents Of The University Of California Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices
JP2006229008A (ja) * 2005-02-18 2006-08-31 Opnext Japan Inc 半導体レーザ素子
JP5013698B2 (ja) * 2005-10-21 2012-08-29 ローム株式会社 ２波長型半導体レーザ発光装置及びその製造方法
JP2007157838A (ja) * 2005-12-01 2007-06-21 Matsushita Electric Ind Co Ltd 半導体レーザ素子
US8176052B2 (en) * 2006-03-03 2012-05-08 Perfect Search Corporation Hyperspace index
PL1883119T3 (pl) 2006-07-27 2016-04-29 Osram Opto Semiconductors Gmbh Półprzewodnikowa struktura warstwowa z supersiecią
EP1883140B1 (de) 2006-07-27 2013-02-27 OSRAM Opto Semiconductors GmbH LD oder LED mit Übergitter-Mantelschicht und Dotierungsgradienten
DE102006046237A1 (de) * 2006-07-27 2008-01-31 Osram Opto Semiconductors Gmbh Halbleiter-Schichtstruktur mit Übergitter
EP1883141B1 (de) 2006-07-27 2017-05-24 OSRAM Opto Semiconductors GmbH LD oder LED mit Übergitter-Mantelschicht
US8218595B2 (en) 2010-05-28 2012-07-10 Corning Incorporated Enhanced planarity in GaN edge emitting lasers
US8446927B2 (en) 2011-01-27 2013-05-21 Rohm Co., Ltd. Semiconductor laser device and manufacturing method thereof
CN105226145B (zh) * 2014-06-23 2019-05-31 中国科学院物理研究所 量子阱结构、发光二极管外延结构及发光二极管
US10084282B1 (en) 2017-08-14 2018-09-25 The United States Of America As Represented By The Secretary Of The Air Force Fundamental mode operation in broad area quantum cascade lasers
US11031753B1 (en) 2017-11-13 2021-06-08 The Government Of The United States Of America As Represented By The Secretary Of The Air Force Extracting the fundamental mode in broad area quantum cascade lasers
US11196232B2 (en) * 2019-08-19 2021-12-07 Lumentum Japan, Inc. Modulation doped semiconductor laser and manufacturing method therefor

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2139422B (en) * 1983-03-24 1987-06-03 Hitachi Ltd Semiconductor laser and method of fabricating the same
CA1279394C (en) * 1985-07-26 1991-01-22 Naoki Chinone Multiple quantum well type semiconductor laser
JPS6377186A (ja) * 1986-09-19 1988-04-07 Mitsubishi Electric Corp 半導体レ−ザの製造方法
JPS63164484A (ja) * 1986-12-26 1988-07-07 Sharp Corp 半導体レ−ザ素子
JP2569036B2 (ja) * 1987-02-18 1997-01-08 株式会社日立製作所 半導体レ−ザ装置
JP2866438B2 (ja) * 1990-04-23 1999-03-08 日通工株式会社 キッチンディスプレイシステム
JPH045687A (ja) * 1990-04-23 1992-01-09 Mitsubishi Electric Corp 画面表示装置
JPH054191A (ja) * 1991-06-28 1993-01-14 Fanuc Ltd 直動と旋回の機能を有した単腕、小型ロボツトの配管ホース処理装置

Also Published As

Publication number Publication date
EP0358842B1 (de) 1996-08-21
EP0358842A3 (en) 1990-10-10
DE68926986T2 (de) 1997-02-20
EP0358842A2 (de) 1990-03-21
US4961197A (en) 1990-10-02

Similar Documents

Publication Publication Date Title
DE68926986D1 (de) Halbleiterlaser und Verfahren zur Herstellung desselben
DE69032451T2 (de) Halbleiterlaser und Verfahren zur Herstellung desselben
DE69027368D1 (de) Halbleiterlaser und Verfahren zur Herstellung desselben
DE69327483D1 (de) Diode und Verfahren zur Herstellung
DE69026353D1 (de) Feldemissionsvorrichtung und Verfahren zur Herstellung derselben
DE69323827D1 (de) Diamant-Halbleiter und Verfahren zur Herstellung
DE69120995D1 (de) Hochgeschwindigkeitsdiode und Verfahren zur Herstellung
DE69130346T2 (de) Verfahren zur Herstellung von Halbleiteranordnungen
DE69025842D1 (de) Lichtemittierende Halbleitervorrichtung und Verfahren zu ihrer Herstellung
DE68924132D1 (de) Halbleiterbauteil und Verfahren zur dessen Herstellung.
DE3788015D1 (de) Lautsprecherabdeckung und Verfahren zur Herstellung derselben.
DE69431023T2 (de) Halbleiteraufbau und Verfahren zur Herstellung
DE59401845D1 (de) Rotor und Verfahren zur Herstellung desselben
DE69220591D1 (de) Enzymbiosensor und Verfahren zur Herstellung desselben
DE69304455D1 (de) Halbleiterlaser und Verfahren zur Herstellung
DE3856150D1 (de) Halbleiteranordnung und verfahren zur herstellung
DE69328985D1 (de) Gate-gesteuerte Diode und Verfahren zur Herstellung derselben
DE69027960D1 (de) Elektronen emittierendes Element und Verfahren zur Herstellung desselben
DE69508885T2 (de) Halbleiterdiode und Verfahren zur Herstellung
DE69014454D1 (de) Hochspannungs-Halbleiteranordnung und Verfahren zur Herstellung.
DE69104300D1 (de) Ultraviolett-Halbleiterlaser und Verfahren zur Herstellung desselben.
DE68914927D1 (de) Halbleiteranordnung vom mit Plastik umhüllten Typ und Verfahren zur Herstellung derselben.
DE3788841D1 (de) Halbleiterlaservorrichtung und Verfahren zur Herstellung derselben.
DE69115808D1 (de) Halbleiterlaser mit verteilter Rückkopplung und Verfahren zu seiner Herstellung
DE69528683T2 (de) Halbleiterbauteil und Verfahren zur Herstellung desselben

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee