DE3788841D1 - Halbleiterlaservorrichtung und Verfahren zur Herstellung derselben. - Google Patents

Halbleiterlaservorrichtung und Verfahren zur Herstellung derselben.

Info

Publication number
DE3788841D1
DE3788841D1 DE87308888T DE3788841T DE3788841D1 DE 3788841 D1 DE3788841 D1 DE 3788841D1 DE 87308888 T DE87308888 T DE 87308888T DE 3788841 T DE3788841 T DE 3788841T DE 3788841 D1 DE3788841 D1 DE 3788841D1
Authority
DE
Germany
Prior art keywords
manufacturing
same
semiconductor laser
laser device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE87308888T
Other languages
English (en)
Other versions
DE3788841T2 (de
Inventor
Saburo Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP23823586A external-priority patent/JPS6392078A/ja
Priority claimed from JP23947086A external-priority patent/JPS6393182A/ja
Priority claimed from JP23947386A external-priority patent/JPS6393185A/ja
Priority claimed from JP23947286A external-priority patent/JPS6393184A/ja
Priority claimed from JP23947186A external-priority patent/JPS6393183A/ja
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE3788841D1 publication Critical patent/DE3788841D1/de
Application granted granted Critical
Publication of DE3788841T2 publication Critical patent/DE3788841T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
DE87308888T 1986-10-07 1987-10-07 Halbleiterlaservorrichtung und Verfahren zur Herstellung derselben. Expired - Fee Related DE3788841T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP23823586A JPS6392078A (ja) 1986-10-07 1986-10-07 半導体レ−ザ素子
JP23947086A JPS6393182A (ja) 1986-10-08 1986-10-08 埋込型半導体レ−ザ素子
JP23947386A JPS6393185A (ja) 1986-10-08 1986-10-08 埋込型半導体レ−ザ素子の製造方法
JP23947286A JPS6393184A (ja) 1986-10-08 1986-10-08 埋込型半導体レ−ザ素子の製造方法
JP23947186A JPS6393183A (ja) 1986-10-08 1986-10-08 埋込型半導体レ−ザ素子

Publications (2)

Publication Number Publication Date
DE3788841D1 true DE3788841D1 (de) 1994-03-03
DE3788841T2 DE3788841T2 (de) 1994-05-05

Family

ID=27529994

Family Applications (1)

Application Number Title Priority Date Filing Date
DE87308888T Expired - Fee Related DE3788841T2 (de) 1986-10-07 1987-10-07 Halbleiterlaservorrichtung und Verfahren zur Herstellung derselben.

Country Status (3)

Country Link
US (1) US4868838A (de)
EP (1) EP0264225B1 (de)
DE (1) DE3788841T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0321294B1 (de) * 1987-12-18 1995-09-06 Sharp Kabushiki Kaisha Halbleiterlaservorrichtung
JPH0279486A (ja) * 1988-09-14 1990-03-20 Sharp Corp 半導体レーザ素子
US5070510A (en) * 1989-12-12 1991-12-03 Sharp Kabushiki Kaisha Semiconductor laser device
JP2547464B2 (ja) * 1990-04-13 1996-10-23 シャープ株式会社 半導体レーザ素子の製造方法
JP2815769B2 (ja) * 1992-12-15 1998-10-27 三菱電機株式会社 半導体レーザの製造方法
US5721751A (en) * 1993-10-28 1998-02-24 Nippon Telegraph & Telephone Corporation Semiconductor laser
CN105122469B (zh) * 2013-04-19 2017-03-08 富士通株式会社 半导体受光元件及其制造方法
JP6493825B2 (ja) * 2014-08-22 2019-04-03 住友電工デバイス・イノベーション株式会社 半導体レーザ素子
US10084282B1 (en) 2017-08-14 2018-09-25 The United States Of America As Represented By The Secretary Of The Air Force Fundamental mode operation in broad area quantum cascade lasers
US11031753B1 (en) 2017-11-13 2021-06-08 The Government Of The United States Of America As Represented By The Secretary Of The Air Force Extracting the fundamental mode in broad area quantum cascade lasers

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1378128A (en) * 1973-06-26 1974-12-18 Alferov Z I Semiconductor laser
US4317085A (en) * 1979-09-12 1982-02-23 Xerox Corporation Channeled mesa laser
JPS5826834B2 (ja) * 1979-09-28 1983-06-06 株式会社日立製作所 半導体レ−ザ−装置
JPS5855674B2 (ja) * 1979-12-29 1983-12-10 富士通株式会社 半導体発光装置の製造方法
JPS5710992A (en) * 1980-06-24 1982-01-20 Sumitomo Electric Ind Ltd Semiconductor device and manufacture therefor
JPS5726487A (en) * 1980-07-23 1982-02-12 Hitachi Ltd Semiconductor laser device
US4481631A (en) * 1981-06-12 1984-11-06 At&T Bell Laboratories Loss stabilized buried heterostructure laser
GB2105099B (en) * 1981-07-02 1985-06-12 Standard Telephones Cables Ltd Injection laser
JPS5858783A (ja) * 1981-10-02 1983-04-07 Nec Corp 半導体レ−ザ
US4416012A (en) * 1981-11-19 1983-11-15 Rca Corporation W-Guide buried heterostructure laser
GB2115608B (en) * 1982-02-24 1985-10-30 Plessey Co Plc Semi-conductor lasers
JPS59104189A (ja) * 1982-12-07 1984-06-15 Kokusai Denshin Denwa Co Ltd <Kdd> 半導体レ−ザ
US4512022A (en) * 1982-07-13 1985-04-16 At&T Bell Laboratories Semiconductor laser having graded index waveguide
NL8301745A (nl) * 1983-05-17 1984-12-17 Philips Nv Halfgeleiderinrichting.
JPS6014482A (ja) * 1983-07-04 1985-01-25 Toshiba Corp 半導体レ−ザ装置
JPS6057988A (ja) * 1983-09-09 1985-04-03 Nec Corp 半導体レ−ザ
JPS6174386A (ja) * 1984-09-19 1986-04-16 Sharp Corp 半導体素子
JPS61236189A (ja) * 1985-04-11 1986-10-21 Sharp Corp 半導体レ−ザ素子
US4706255A (en) * 1985-05-20 1987-11-10 Xerox Corporation Phased array semiconductor laser with preferred emission in the fundamental supermode
JPS6218082A (ja) * 1985-07-16 1987-01-27 Sharp Corp 半導体レ−ザ素子
JPS6218783A (ja) * 1985-07-17 1987-01-27 Sharp Corp 半導体レ−ザ素子
CA1279394C (en) * 1985-07-26 1991-01-22 Naoki Chinone Multiple quantum well type semiconductor laser
JPS6267890A (ja) * 1985-09-20 1987-03-27 Hitachi Ltd 半導体レ−ザ
JPS6273687A (ja) * 1985-09-26 1987-04-04 Mitsubishi Electric Corp 半導体レ−ザ装置
JPS62193192A (ja) * 1986-02-19 1987-08-25 Sharp Corp 半導体レ−ザ素子

Also Published As

Publication number Publication date
EP0264225A3 (en) 1988-10-12
US4868838A (en) 1989-09-19
EP0264225A2 (de) 1988-04-20
DE3788841T2 (de) 1994-05-05
EP0264225B1 (de) 1994-01-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee