DE69031401D1 - Halbleiterlaser, Halbleiter-Wafer und Verfahren zur Herstellung derselben - Google Patents

Halbleiterlaser, Halbleiter-Wafer und Verfahren zur Herstellung derselben

Info

Publication number
DE69031401D1
DE69031401D1 DE69031401T DE69031401T DE69031401D1 DE 69031401 D1 DE69031401 D1 DE 69031401D1 DE 69031401 T DE69031401 T DE 69031401T DE 69031401 T DE69031401 T DE 69031401T DE 69031401 D1 DE69031401 D1 DE 69031401D1
Authority
DE
Germany
Prior art keywords
semiconductor
manufacturing
methods
same
lasers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69031401T
Other languages
English (en)
Other versions
DE69031401T2 (de
Inventor
Masaki Kondo
Kazuaki Sasaki
Taiji Morimoto
Mitsuhiro Matsumoto
Hiroyuki Hosoba
Sadayoshi Matsui
Saburo Yamamoto
Takahiro Suyama
Masafumi Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1111399A external-priority patent/JPH07109926B2/ja
Priority claimed from JP14561989A external-priority patent/JPH039592A/ja
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE69031401D1 publication Critical patent/DE69031401D1/de
Application granted granted Critical
Publication of DE69031401T2 publication Critical patent/DE69031401T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H01S5/32391—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers based on In(Ga)(As)P

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
DE69031401T 1989-04-28 1990-04-27 Halbleiterlaser, Halbleiter-Wafer und Verfahren zur Herstellung derselben Expired - Fee Related DE69031401T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1111399A JPH07109926B2 (ja) 1989-04-28 1989-04-28 半導体レーザ装置及びその製造方法
JP14561989A JPH039592A (ja) 1989-06-07 1989-06-07 半導体ウェーハの製造方法

Publications (2)

Publication Number Publication Date
DE69031401D1 true DE69031401D1 (de) 1997-10-16
DE69031401T2 DE69031401T2 (de) 1998-03-19

Family

ID=26450798

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69031401T Expired - Fee Related DE69031401T2 (de) 1989-04-28 1990-04-27 Halbleiterlaser, Halbleiter-Wafer und Verfahren zur Herstellung derselben

Country Status (3)

Country Link
US (1) US5042044A (de)
EP (1) EP0395436B1 (de)
DE (1) DE69031401T2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2547464B2 (ja) * 1990-04-13 1996-10-23 シャープ株式会社 半導体レーザ素子の製造方法
EP0627799B1 (de) * 1993-06-04 1997-10-08 Sharp Kabushiki Kaisha Lichtmittierende Halbleitervorrichtung mit einer dritten Begrenzungsschicht

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55124292A (en) * 1979-03-19 1980-09-25 Matsushita Electric Ind Co Ltd Semiconductor laser device and method of fabricating the same
US4317085A (en) * 1979-09-12 1982-02-23 Xerox Corporation Channeled mesa laser
US4461008A (en) * 1982-04-09 1984-07-17 Rca Corporation Terraced heterostructure semiconductor laser
US4523318A (en) * 1982-10-29 1985-06-11 Rca Corporation Semiconductor laser having high manufacturing yield
JPS60214580A (ja) * 1984-04-10 1985-10-26 Sharp Corp 半導体レ−ザアレイ装置
JPS6146995A (ja) * 1984-08-11 1986-03-07 富士通株式会社 音声認識システム
EP0199588B1 (de) * 1985-04-23 1993-09-01 Sharp Kabushiki Kaisha Halbleiterlaservorrichtung
JPS6238875A (ja) * 1985-08-12 1987-02-19 Hitachi Ltd 配電器駆動装置
JPS6265492A (ja) * 1985-09-18 1987-03-24 Sharp Corp 半導体レ−ザ−素子
JPS6321358A (ja) * 1986-07-16 1988-01-28 Diesel Kiki Co Ltd 分配型燃料噴射ポンプ
JPS63307792A (ja) * 1987-06-09 1988-12-15 Sharp Corp 半導体レ−ザアレイ素子及びその製造方法
JPH069275B2 (ja) * 1987-05-19 1994-02-02 シャープ株式会社 半導体レ−ザアレイ装置
JP2639933B2 (ja) * 1987-05-19 1997-08-13 三洋電機株式会社 半導体レーザの製造方法
JPS648689A (en) * 1987-06-30 1989-01-12 Sharp Kk Semiconductor laser array element and manufacture thereof
JPH0728098B2 (ja) * 1987-06-01 1995-03-29 三洋電機株式会社 半導体レ−ザの製造方法
JPH0646668B2 (ja) * 1987-07-28 1994-06-15 シャープ株式会社 半導体レ−ザアレイ素子
JPH06103775B2 (ja) * 1987-07-31 1994-12-14 シャープ株式会社 半導体レ−ザアレイ装置
JPH01259589A (ja) * 1988-04-09 1989-10-17 Toshiba Corp 半導体レーザ素子

Also Published As

Publication number Publication date
US5042044A (en) 1991-08-20
EP0395436A2 (de) 1990-10-31
EP0395436B1 (de) 1997-09-10
DE69031401T2 (de) 1998-03-19
EP0395436A3 (de) 1991-09-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee