DE69224819D1 - Methode zur Herstellung von Halbleiterchips - Google Patents

Methode zur Herstellung von Halbleiterchips

Info

Publication number
DE69224819D1
DE69224819D1 DE69224819T DE69224819T DE69224819D1 DE 69224819 D1 DE69224819 D1 DE 69224819D1 DE 69224819 T DE69224819 T DE 69224819T DE 69224819 T DE69224819 T DE 69224819T DE 69224819 D1 DE69224819 D1 DE 69224819D1
Authority
DE
Germany
Prior art keywords
semiconductor chips
manufacturing semiconductor
manufacturing
chips
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69224819T
Other languages
English (en)
Other versions
DE69224819T2 (de
Inventor
Takuo Kashiwa
Takahide Ishikawa
Yoshihiro Notani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE69224819D1 publication Critical patent/DE69224819D1/de
Application granted granted Critical
Publication of DE69224819T2 publication Critical patent/DE69224819T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/028—Dicing

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
DE69224819T 1992-02-06 1992-08-15 Methode zur Herstellung von Halbleiterchips Expired - Fee Related DE69224819T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4057152A JP2763441B2 (ja) 1992-02-06 1992-02-06 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
DE69224819D1 true DE69224819D1 (de) 1998-04-23
DE69224819T2 DE69224819T2 (de) 1998-07-09

Family

ID=13047598

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69224819T Expired - Fee Related DE69224819T2 (de) 1992-02-06 1992-08-15 Methode zur Herstellung von Halbleiterchips

Country Status (4)

Country Link
US (1) US5302554A (de)
EP (1) EP0558795B1 (de)
JP (1) JP2763441B2 (de)
DE (1) DE69224819T2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06268112A (ja) * 1993-03-10 1994-09-22 Mitsubishi Electric Corp 半導体装置、及びその製造方法
US5580831A (en) * 1993-07-28 1996-12-03 Fujitsu Limited Sawcut method of forming alignment marks on two faces of a substrate
US5552345A (en) * 1993-09-22 1996-09-03 Harris Corporation Die separation method for silicon on diamond circuit structures
JP3374880B2 (ja) * 1994-10-26 2003-02-10 三菱電機株式会社 半導体装置の製造方法、及び半導体装置
US6083811A (en) * 1996-02-07 2000-07-04 Northrop Grumman Corporation Method for producing thin dice from fragile materials
JP3810204B2 (ja) * 1998-03-19 2006-08-16 三菱電機株式会社 半導体装置の製造方法および半導体装置
JP2000077576A (ja) * 1998-09-02 2000-03-14 Texas Instr Japan Ltd 半導体装置及びその製造方法
US6320269B1 (en) 1999-05-03 2001-11-20 Taiwan Semiconductor Manufacturing Company Method for preparing a semiconductor wafer to receive a protective tape
JP2000332100A (ja) * 1999-05-18 2000-11-30 Mitsubishi Electric Corp 半導体装置の製造方法および半導体装置
JP2002092575A (ja) * 2000-09-19 2002-03-29 Mitsubishi Electric Corp 小型カードとその製造方法
US6291317B1 (en) * 2000-12-06 2001-09-18 Xerox Corporation Method for dicing of micro devices
SG139508A1 (en) * 2001-09-10 2008-02-29 Micron Technology Inc Wafer dicing device and method
SG102639A1 (en) * 2001-10-08 2004-03-26 Micron Technology Inc Apparatus and method for packing circuits
SG142115A1 (en) * 2002-06-14 2008-05-28 Micron Technology Inc Wafer level packaging
SG119185A1 (en) * 2003-05-06 2006-02-28 Micron Technology Inc Method for packaging circuits and packaged circuits
US7210987B2 (en) * 2004-03-30 2007-05-01 Intel Corporation Wafer grinding method
CN100382280C (zh) * 2005-06-15 2008-04-16 探微科技股份有限公司 晶片切割方法
DE102006046789A1 (de) * 2006-10-02 2008-04-03 Infineon Technologies Ag Elektronisches Bauteil und Verfahren zur Herstellung elektronischer Bauteile
US8647966B2 (en) * 2011-06-09 2014-02-11 National Semiconductor Corporation Method and apparatus for dicing die attach film on a semiconductor wafer
US9165831B2 (en) * 2013-06-27 2015-10-20 Globalfoundries Inc. Dice before grind with backside metal
JP6540430B2 (ja) * 2015-09-28 2019-07-10 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP6976111B2 (ja) * 2017-09-11 2021-12-08 エイブリック株式会社 半導体装置の製造方法
CN112967928B (zh) * 2020-12-16 2022-07-29 重庆康佳光电技术研究院有限公司 芯片的切割方法及芯片的转移方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3911559A (en) * 1973-12-10 1975-10-14 Texas Instruments Inc Method of dielectric isolation to provide backside collector contact and scribing yield
US4023258A (en) * 1976-03-05 1977-05-17 Bell Telephone Laboratories, Incorporated Method of manufacturing semiconductor diodes for use in millimeter-wave circuits
JPS56103447A (en) * 1980-01-22 1981-08-18 Toshiba Corp Dicing method of semiconductor wafer
US4946716A (en) * 1985-05-31 1990-08-07 Tektronix, Inc. Method of thinning a silicon wafer using a reinforcing material
JPS6278827A (ja) * 1985-09-30 1987-04-11 Mitsubishi Electric Corp 半導体装置の製造方法
JPS62122279A (ja) * 1985-11-22 1987-06-03 Toshiba Corp 電界効果トランジスタの製造方法
US4755474A (en) * 1986-12-22 1988-07-05 Motorola Inc. Method of assembling an optocoupler
JPS63276276A (ja) * 1987-05-08 1988-11-14 Nec Corp 半導体装置の製造方法
US4904610A (en) * 1988-01-27 1990-02-27 General Instrument Corporation Wafer level process for fabricating passivated semiconductor devices
JPH02148739A (ja) * 1988-11-29 1990-06-07 Mitsubishi Electric Corp 半導体装置の製造方法
US4978639A (en) * 1989-01-10 1990-12-18 Avantek, Inc. Method for the simultaneous formation of via-holes and wraparound plating on semiconductor chips
JPH02214127A (ja) * 1989-02-15 1990-08-27 Mitsubishi Electric Corp 半導体装置およびその製造方法
US5071792A (en) * 1990-11-05 1991-12-10 Harris Corporation Process for forming extremely thin integrated circuit dice
US5128282A (en) * 1991-11-04 1992-07-07 Xerox Corporation Process for separating image sensor dies and the like from a wafer that minimizes silicon waste

Also Published As

Publication number Publication date
US5302554A (en) 1994-04-12
EP0558795A1 (de) 1993-09-08
EP0558795B1 (de) 1998-03-18
DE69224819T2 (de) 1998-07-09
JPH05218197A (ja) 1993-08-27
JP2763441B2 (ja) 1998-06-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee