DE69429218D1 - Vorrichtung zur schnellen thermischen behandlung zur herstellung von halbleiterwafers - Google Patents

Vorrichtung zur schnellen thermischen behandlung zur herstellung von halbleiterwafers

Info

Publication number
DE69429218D1
DE69429218D1 DE69429218T DE69429218T DE69429218D1 DE 69429218 D1 DE69429218 D1 DE 69429218D1 DE 69429218 T DE69429218 T DE 69429218T DE 69429218 T DE69429218 T DE 69429218T DE 69429218 D1 DE69429218 D1 DE 69429218D1
Authority
DE
Germany
Prior art keywords
production
thermal treatment
semiconductor wafers
fast thermal
fast
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69429218T
Other languages
English (en)
Other versions
DE69429218T2 (de
Inventor
M Moore
Katsuhito Nishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Moore Epitaxial Inc
Original Assignee
Moore Epitaxial Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Moore Epitaxial Inc filed Critical Moore Epitaxial Inc
Publication of DE69429218D1 publication Critical patent/DE69429218D1/de
Application granted granted Critical
Publication of DE69429218T2 publication Critical patent/DE69429218T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45589—Movable means, e.g. fans
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/12—Heating of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/14—Substrate holders or susceptors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/0033—Heating devices using lamps
    • H05B3/0038—Heating devices using lamps for industrial applications
    • H05B3/0047—Heating devices using lamps for industrial applications for semiconductor manufacture

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
DE69429218T 1993-01-21 1994-01-21 Vorrichtung zur schnellen thermischen behandlung zur herstellung von halbleiterwafers Expired - Fee Related DE69429218T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/007,981 US5444217A (en) 1993-01-21 1993-01-21 Rapid thermal processing apparatus for processing semiconductor wafers
PCT/US1994/000456 WO1994017353A1 (en) 1993-01-21 1994-01-21 A rapid thermal processing apparatus for processing semiconductor wafers

Publications (2)

Publication Number Publication Date
DE69429218D1 true DE69429218D1 (de) 2002-01-10
DE69429218T2 DE69429218T2 (de) 2002-08-29

Family

ID=21729164

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69434773T Expired - Fee Related DE69434773T2 (de) 1993-01-21 1994-01-21 Vorrichtung zur schnellen thermischen Behandlung zur Herstellung von Halbleiterwafern
DE69429218T Expired - Fee Related DE69429218T2 (de) 1993-01-21 1994-01-21 Vorrichtung zur schnellen thermischen behandlung zur herstellung von halbleiterwafers

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69434773T Expired - Fee Related DE69434773T2 (de) 1993-01-21 1994-01-21 Vorrichtung zur schnellen thermischen Behandlung zur Herstellung von Halbleiterwafern

Country Status (5)

Country Link
US (5) US5444217A (de)
EP (2) EP0633997B1 (de)
JP (3) JP4084412B2 (de)
DE (2) DE69434773T2 (de)
WO (1) WO1994017353A1 (de)

Families Citing this family (652)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5580388A (en) * 1993-01-21 1996-12-03 Moore Epitaxial, Inc. Multi-layer susceptor for rapid thermal process reactors
US5444217A (en) * 1993-01-21 1995-08-22 Moore Epitaxial Inc. Rapid thermal processing apparatus for processing semiconductor wafers
US5820686A (en) * 1993-01-21 1998-10-13 Moore Epitaxial, Inc. Multi-layer susceptor for rapid thermal process reactors
KR0135840B1 (ko) * 1994-07-26 1998-04-29 김광호 개구부 매몰(filling)장치와 이를 이용한 반도체소자 제조방법
US5705232A (en) * 1994-09-20 1998-01-06 Texas Instruments Incorporated In-situ coat, bake and cure of dielectric material processing system for semiconductor manufacturing
JP3094816B2 (ja) * 1994-10-25 2000-10-03 信越半導体株式会社 薄膜の成長方法
JP3011866B2 (ja) * 1994-11-30 2000-02-21 信越石英株式会社 枚葉式ウエーハ熱処理装置
US5928427A (en) * 1994-12-16 1999-07-27 Hwang; Chul-Ju Apparatus for low pressure chemical vapor deposition
US5982986A (en) * 1995-02-03 1999-11-09 Applied Materials, Inc. Apparatus and method for rotationally aligning and degassing semiconductor substrate within single vacuum chamber
JPH08316154A (ja) * 1995-02-23 1996-11-29 Applied Materials Inc 疑似ホットウォール反応チャンバ
US5830277A (en) * 1995-05-26 1998-11-03 Mattson Technology, Inc. Thermal processing system with supplemental resistive heater and shielded optical pyrometry
TW331652B (en) * 1995-06-16 1998-05-11 Ebara Corp Thin film vapor deposition apparatus
US6002109A (en) * 1995-07-10 1999-12-14 Mattson Technology, Inc. System and method for thermal processing of a semiconductor substrate
US5871588A (en) * 1995-07-10 1999-02-16 Cvc, Inc. Programmable ultraclean electromagnetic substrate rotation apparatus and method for microelectronics manufacturing equipment
JPH0936198A (ja) * 1995-07-19 1997-02-07 Hitachi Ltd 真空処理装置およびそれを用いた半導体製造ライン
US6086680A (en) * 1995-08-22 2000-07-11 Asm America, Inc. Low-mass susceptor
US6053982A (en) * 1995-09-01 2000-04-25 Asm America, Inc. Wafer support system
US5584936A (en) * 1995-12-14 1996-12-17 Cvd, Incorporated Susceptor for semiconductor wafer processing
US5881208A (en) * 1995-12-20 1999-03-09 Sematech, Inc. Heater and temperature sensor array for rapid thermal processing thermal core
US5651827A (en) * 1996-01-11 1997-07-29 Heraeus Quarzglas Gmbh Single-wafer heat-treatment apparatus and method of manufacturing reactor vessel used for same
US5892886A (en) 1996-02-02 1999-04-06 Micron Technology, Inc. Apparatus for uniform gas and radiant heat dispersion for solid state fabrication processes
US5751896A (en) * 1996-02-22 1998-05-12 Micron Technology, Inc. Method and apparatus to compensate for non-uniform film growth during chemical vapor deposition
TW315493B (en) * 1996-02-28 1997-09-11 Tokyo Electron Co Ltd Heating apparatus and heat treatment apparatus
JPH09260364A (ja) * 1996-03-26 1997-10-03 Tokyo Electron Ltd 熱処理方法および熱処理装置
US6031211A (en) * 1997-07-11 2000-02-29 Concept Systems Design, Inc. Zone heating system with feedback control
EP0823492A3 (de) * 1996-08-07 1999-01-20 Concept Systems Design Inc. Zonenheizungssystem mit Rückkopplungsreglung
US6066836A (en) * 1996-09-23 2000-05-23 Applied Materials, Inc. High temperature resistive heater for a process chamber
KR100239405B1 (ko) * 1996-10-24 2000-01-15 김영환 반도체 제조장치
US5889258A (en) * 1996-12-12 1999-03-30 Lubomirski; Dimitri High temperature heating apparatus
US5789309A (en) * 1996-12-30 1998-08-04 Memc Electronic Materials, Inc. Method and system for monocrystalline epitaxial deposition
US6110289A (en) * 1997-02-25 2000-08-29 Moore Epitaxial, Inc. Rapid thermal processing barrel reactor for processing substrates
JPH10239165A (ja) * 1997-02-27 1998-09-11 Sony Corp 基板の温度測定器、基板の温度を測定する方法および基板の加熱方法
US5986329A (en) * 1997-03-07 1999-11-16 Advanced Micro Devices, Inc. Deposition of super thin PECVD SiO2 in multiple deposition station system
US6217662B1 (en) * 1997-03-24 2001-04-17 Cree, Inc. Susceptor designs for silicon carbide thin films
JP3702068B2 (ja) * 1997-04-09 2005-10-05 東京エレクトロン株式会社 被処理基板の処理装置
US6051512A (en) * 1997-04-11 2000-04-18 Steag Rtp Systems Apparatus and method for rapid thermal processing (RTP) of a plurality of semiconductor wafers
AU7291398A (en) 1997-05-06 1998-11-27 Thermoceramix, L.L.C. Deposited resistive coatings
US5911896A (en) * 1997-06-25 1999-06-15 Brooks Automation, Inc. Substrate heating apparatus with glass-ceramic panels and thin film ribbon heater element
US5840124A (en) * 1997-06-30 1998-11-24 Emcore Corporation Wafer carrier with flexible wafer flat holder
US5926615A (en) * 1997-07-08 1999-07-20 National Science Council Temperature compensation method for semiconductor wafers in rapid thermal processor using separated heat conducting rings as susceptors
US6024799A (en) * 1997-07-11 2000-02-15 Applied Materials, Inc. Chemical vapor deposition manifold
US5960158A (en) 1997-07-11 1999-09-28 Ag Associates Apparatus and method for filtering light in a thermal processing chamber
US5870526A (en) * 1997-07-17 1999-02-09 Steag-Ast Inflatable elastomeric element for rapid thermal processing (RTP) system
JPH1154496A (ja) * 1997-08-07 1999-02-26 Tokyo Electron Ltd 熱処理装置及びガス処理装置
JPH1197446A (ja) * 1997-09-18 1999-04-09 Tokyo Electron Ltd 縦型熱処理装置
JP2001522142A (ja) 1997-11-03 2001-11-13 エーエスエム アメリカ インコーポレイテッド 改良された低質量ウェハ支持システム
US6005226A (en) * 1997-11-24 1999-12-21 Steag-Rtp Systems Rapid thermal processing (RTP) system with gas driven rotating substrate
EP2099061A3 (de) * 1997-11-28 2013-06-12 Mattson Technology, Inc. Verfahren und Anlage zur Handhabung von Werkstücken unter Vakuum mit niedriger Kontamination und hohem Durchsatz
JP2928210B1 (ja) 1998-01-30 1999-08-03 九州日本電気株式会社 半導体基板の不純物拡散処理方法および半導体製造装置
US6018616A (en) * 1998-02-23 2000-01-25 Applied Materials, Inc. Thermal cycling module and process using radiant heat
US6592661B1 (en) 1998-02-25 2003-07-15 Micron Technology, Inc. Method for processing wafers in a semiconductor fabrication system
JP3374743B2 (ja) * 1998-03-05 2003-02-10 日本電気株式会社 基板熱処理装置及び同装置からの基板の分離方法
US6301434B1 (en) 1998-03-23 2001-10-09 Mattson Technology, Inc. Apparatus and method for CVD and thermal processing of semiconductor substrates
US6129808A (en) 1998-03-31 2000-10-10 Lam Research Corporation Low contamination high density plasma etch chambers and methods for making the same
US6464843B1 (en) 1998-03-31 2002-10-15 Lam Research Corporation Contamination controlling method and apparatus for a plasma processing chamber
TW463028B (en) * 1998-04-21 2001-11-11 Hitachi Shipbuilding Eng Co Working robot for heat exchangers and operating method thereof
US6188044B1 (en) * 1998-04-27 2001-02-13 Cvc Products, Inc. High-performance energy transfer system and method for thermal processing applications
DE19821007A1 (de) * 1998-05-11 1999-11-25 Steag Rtp Systems Gmbh Verfahren und Vorrichtung zum thermischen Behandeln von Substraten
US5970214A (en) 1998-05-14 1999-10-19 Ag Associates Heating device for semiconductor wafers
US5930456A (en) 1998-05-14 1999-07-27 Ag Associates Heating device for semiconductor wafers
US6185839B1 (en) 1998-05-28 2001-02-13 Applied Materials, Inc. Semiconductor process chamber having improved gas distributor
US6034357A (en) * 1998-06-08 2000-03-07 Steag Rtp Systems Inc Apparatus and process for measuring the temperature of semiconductor wafers in the presence of radiation absorbing gases
US6169271B1 (en) 1998-07-13 2001-01-02 Mattson Technology, Inc. Model based method for wafer temperature control in a thermal processing system for semiconductor manufacturing
US6406543B1 (en) * 1998-07-23 2002-06-18 Applied Materials, Inc. Infra-red transparent thermal reactor cover member
IL125690A0 (en) * 1998-08-06 1999-04-11 Reiser Raphael Joshua Furnace for processing semiconductor wafers
US6300600B1 (en) 1998-08-12 2001-10-09 Silicon Valley Group, Inc. Hot wall rapid thermal processor
US6900413B2 (en) 1998-08-12 2005-05-31 Aviza Technology, Inc. Hot wall rapid thermal processor
US6462310B1 (en) 1998-08-12 2002-10-08 Asml Us, Inc Hot wall rapid thermal processor
US6210484B1 (en) 1998-09-09 2001-04-03 Steag Rtp Systems, Inc. Heating device containing a multi-lamp cone for heating semiconductor wafers
US6957690B1 (en) * 1998-09-10 2005-10-25 Asm America, Inc. Apparatus for thermal treatment of substrates
JP3516596B2 (ja) * 1998-10-19 2004-04-05 松下電器産業株式会社 半導体装置の製造方法
US6454854B1 (en) * 1998-10-29 2002-09-24 Shin-Etsu Handotai Co., Ltd. Semiconductor wafer and production method therefor
US6310328B1 (en) 1998-12-10 2001-10-30 Mattson Technologies, Inc. Rapid thermal processing chamber for processing multiple wafers
US6771895B2 (en) 1999-01-06 2004-08-03 Mattson Technology, Inc. Heating device for heating semiconductor wafers in thermal processing chambers
US6091889A (en) * 1999-01-08 2000-07-18 National Science Council Rapid thermal processor for heating a substrate
US6263829B1 (en) 1999-01-22 2001-07-24 Applied Materials, Inc. Process chamber having improved gas distributor and method of manufacture
US6281141B1 (en) 1999-02-08 2001-08-28 Steag Rtp Systems, Inc. Process for forming thin dielectric layers in semiconductor devices
US6261975B1 (en) * 1999-03-04 2001-07-17 Applied Materials, Inc. Method for depositing and planarizing fluorinated BPSG films
US6105274A (en) * 1999-03-18 2000-08-22 International Business Machines Corporation Cryogenic/phase change cooling for rapid thermal process systems
US6303411B1 (en) * 1999-05-03 2001-10-16 Vortek Industries Ltd. Spatially resolved temperature measurement and irradiance control
US6169244B1 (en) 1999-05-21 2001-01-02 Moore Epitaxial, Inc. Thermocouple sheath cover
TW466576B (en) 1999-06-15 2001-12-01 Ebara Corp Substrate processing apparatus
US6972071B1 (en) * 1999-07-13 2005-12-06 Nordson Corporation High-speed symmetrical plasma treatment system
KR100319494B1 (ko) 1999-07-15 2002-01-09 김용일 원자층 에피택시 공정을 위한 반도체 박막 증착장치
TW425635B (en) 1999-08-23 2001-03-11 Promos Technologies Inc Rapid thermal processing method and its device
US6799603B1 (en) 1999-09-20 2004-10-05 Moore Epitaxial, Inc. Gas flow controller system
US6475284B1 (en) 1999-09-20 2002-11-05 Moore Epitaxial, Inc. Gas dispersion head
US6149365A (en) * 1999-09-21 2000-11-21 Applied Komatsu Technology, Inc. Support frame for substrates
KR100338768B1 (ko) * 1999-10-25 2002-05-30 윤종용 산화막 제거방법 및 산화막 제거를 위한 반도체 제조 장치
JP2001127143A (ja) * 1999-10-27 2001-05-11 Applied Materials Inc 基板支持装置
DE19951991C2 (de) * 1999-10-28 2001-10-25 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zum Beladen eines Suszeptors
DE19952705A1 (de) * 1999-11-02 2001-05-10 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe mit einer epitaktischen Schicht
US6246031B1 (en) 1999-11-30 2001-06-12 Wafermasters, Inc. Mini batch furnace
US6345150B1 (en) * 1999-11-30 2002-02-05 Wafermasters, Inc. Single wafer annealing oven
US6303906B1 (en) 1999-11-30 2001-10-16 Wafermasters, Inc. Resistively heated single wafer furnace
US6436796B1 (en) * 2000-01-31 2002-08-20 Mattson Technology, Inc. Systems and methods for epitaxial processing of a semiconductor substrate
US6347749B1 (en) 2000-02-09 2002-02-19 Moore Epitaxial, Inc. Semiconductor processing reactor controllable gas jet assembly
US6328221B1 (en) 2000-02-09 2001-12-11 Moore Epitaxial, Inc. Method for controlling a gas injector in a semiconductor processing reactor
EP1123992A3 (de) * 2000-02-09 2003-09-17 Moore Epitaxial, Inc. Vorrichtung und Verfahren zur Behandlung von Halbleitern
US6383931B1 (en) * 2000-02-11 2002-05-07 Lam Research Corporation Convertible hot edge ring to improve low-K dielectric etch
US6544339B1 (en) * 2000-03-22 2003-04-08 Micro C Technologies, Inc. Rectilinear wedge geometry for optimal process control in chemical vapor deposition and rapid thermal processing
US6399926B2 (en) * 2000-04-03 2002-06-04 Sigmameltec Ltd. Heat-treating apparatus capable of high temperature uniformity
WO2001082342A1 (en) * 2000-04-26 2001-11-01 Wafermasters Incorporated Gas assisted rapid thermal annealing
US6464412B1 (en) 2000-05-15 2002-10-15 Eastman Kodak Company Apparatus and method for radiant thermal film development
US6417076B1 (en) 2000-06-05 2002-07-09 Micron Technology, Inc. Automated combi deposition apparatus and method
US6545369B1 (en) 2000-06-05 2003-04-08 Micron Technology, Inc. Overlay error reduction by minimization of unpatterned wafer area
JP2001351871A (ja) * 2000-06-09 2001-12-21 Asm Japan Kk 半導体製造装置
US6808758B1 (en) * 2000-06-09 2004-10-26 Mattson Technology, Inc. Pulse precursor deposition process for forming layers in semiconductor devices
US20040079633A1 (en) * 2000-07-05 2004-04-29 Applied Materials, Inc. Apparatus for electro chemical deposition of copper metallization with the capability of in-situ thermal annealing
US6599818B2 (en) * 2000-10-10 2003-07-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device manufacturing method, heat treatment apparatus, and heat treatment method
KR100436941B1 (ko) * 2000-11-07 2004-06-23 주성엔지니어링(주) 박막 증착 장치 및 그 방법
JP2002164423A (ja) * 2000-11-28 2002-06-07 Tokyo Seimitsu Co Ltd ウェーハリフト装置を備えたウェーハ保持装置
JP2004528677A (ja) 2000-11-29 2004-09-16 サーモセラミックス インコーポレイテッド 抵抗加熱器及びその使用法
US6594446B2 (en) * 2000-12-04 2003-07-15 Vortek Industries Ltd. Heat-treating methods and systems
JP2002176000A (ja) * 2000-12-05 2002-06-21 Semiconductor Energy Lab Co Ltd 熱処理装置及び半導体装置の製造方法
US7534977B2 (en) * 2000-12-28 2009-05-19 Semiconductor Energy Laboratory Co., Ltd. Heat treatment apparatus and method of manufacturing a semiconductor device
US6765178B2 (en) 2000-12-29 2004-07-20 Applied Materials, Inc. Chamber for uniform substrate heating
US6825447B2 (en) 2000-12-29 2004-11-30 Applied Materials, Inc. Apparatus and method for uniform substrate heating and contaminate collection
US6770146B2 (en) 2001-02-02 2004-08-03 Mattson Technology, Inc. Method and system for rotating a semiconductor wafer in processing chambers
US7118780B2 (en) 2001-03-16 2006-10-10 Semiconductor Energy Laboratory Co., Ltd. Heat treatment method
JP3975321B2 (ja) * 2001-04-20 2007-09-12 信越化学工業株式会社 フォトマスク用シリカガラス系基板及びフォトマスク用シリカガラス系基板の平坦化方法
KR100422199B1 (ko) * 2001-05-04 2004-03-12 주성엔지니어링(주) 반도체 소자 제조장치
US6344631B1 (en) 2001-05-11 2002-02-05 Applied Materials, Inc. Substrate support assembly and processing apparatus
CN1271678C (zh) * 2001-05-18 2006-08-23 马特森热力产品有限责任公司 搬运装置
DE10156441A1 (de) * 2001-05-18 2002-11-21 Mattson Thermal Products Gmbh Vorrichtung zur Aufnahme von scheibenförmigen Objekten und Vorrichtung zur Handhabung von Objekten
US6645344B2 (en) * 2001-05-18 2003-11-11 Tokyo Electron Limited Universal backplane assembly and methods
KR100876927B1 (ko) * 2001-06-01 2009-01-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 열처리장치 및 열처리방법
JP4703891B2 (ja) * 2001-06-07 2011-06-15 ルネサスエレクトロニクス株式会社 薄膜製造方法
JP4181761B2 (ja) * 2001-06-21 2008-11-19 ジュン キム ヒョン 熱感受性非導電性基板上の半導体フィルムを熱処理するための方法および装置
EP1274121A1 (de) 2001-06-29 2003-01-08 Infineon Technologies SC300 GmbH & Co. KG Halbleiterwaferhalter
DE10131673A1 (de) * 2001-06-29 2003-01-30 Infineon Technologies Ag Tragevorrichtung für einen Wafer
KR20030006245A (ko) * 2001-07-12 2003-01-23 삼성전자 주식회사 웨이퍼 건조장치
JP2003060012A (ja) * 2001-08-08 2003-02-28 Asm Japan Kk 半導体処理用反応チャンバ
TW559905B (en) * 2001-08-10 2003-11-01 Toshiba Corp Vertical chemical vapor deposition system cross-reference to related applications
US6676760B2 (en) 2001-08-16 2004-01-13 Appiled Materials, Inc. Process chamber having multiple gas distributors and method
JP2003086522A (ja) * 2001-09-13 2003-03-20 Sumitomo Chem Co Ltd 半導体製造装置
JP3798674B2 (ja) * 2001-10-29 2006-07-19 大日本スクリーン製造株式会社 熱処理装置および熱処理方法
JP3715228B2 (ja) * 2001-10-29 2005-11-09 大日本スクリーン製造株式会社 熱処理装置
KR100974848B1 (ko) * 2001-12-03 2010-08-11 가부시키가이샤 알박 혼합기, 박막 제조 장치 및 박막 제조 방법
US7445382B2 (en) * 2001-12-26 2008-11-04 Mattson Technology Canada, Inc. Temperature measurement and heat-treating methods and system
US20030141178A1 (en) * 2002-01-30 2003-07-31 Applied Materials, Inc. Energizing gas for substrate processing with shockwaves
DE10208450B4 (de) * 2002-02-27 2004-09-16 Infineon Technologies Ag Verfahren zum Abscheiden dünner Schichten mittels ALD/CVD-Prozessen in Verbindung mit schnellen thermischen Prozessen
US6776849B2 (en) * 2002-03-15 2004-08-17 Asm America, Inc. Wafer holder with peripheral lift ring
US6868302B2 (en) * 2002-03-25 2005-03-15 Dainippon Screen Mfg. Co., Ltd. Thermal processing apparatus
US6998580B2 (en) 2002-03-28 2006-02-14 Dainippon Screen Mfg. Co., Ltd. Thermal processing apparatus and thermal processing method
US6861321B2 (en) 2002-04-05 2005-03-01 Asm America, Inc. Method of loading a wafer onto a wafer holder to reduce thermal shock
US7122844B2 (en) * 2002-05-13 2006-10-17 Cree, Inc. Susceptor for MOCVD reactor
US6687456B1 (en) * 2002-07-15 2004-02-03 Taiwan Semiconductor Manufacturing Co., Ltd In-line fluid heater
KR100992803B1 (ko) * 2002-07-25 2010-11-09 도쿄엘렉트론가부시키가이샤 기판 처리 용기
US6727194B2 (en) * 2002-08-02 2004-04-27 Wafermasters, Inc. Wafer batch processing system and method
US7166168B1 (en) 2002-10-18 2007-01-23 Carl Zeiss Smt Ag Substrate-coating system and an associated substrate-heating method
EP1568068A1 (de) * 2002-11-22 2005-08-31 Applied Materials, Inc. Rückseitenheizkammer
US20050170314A1 (en) * 2002-11-27 2005-08-04 Richard Golden Dental pliers design with offsetting jaw and pad elements for assisting in removing upper and lower teeth and method for removing teeth utilizing the dental plier design
KR20050084200A (ko) * 2002-12-09 2005-08-26 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 웨이퍼 제조 장치, 웨이퍼 제조 방법 및 웨이퍼 간의온도차 감소 방법
KR101163682B1 (ko) 2002-12-20 2012-07-09 맷슨 테크날러지 캐나다 인코퍼레이티드 피가공물 지지 장치
US6709267B1 (en) 2002-12-27 2004-03-23 Asm America, Inc. Substrate holder with deep annular groove to prevent edge heat loss
KR20050088159A (ko) * 2003-01-17 2005-09-01 제너럴 일렉트릭 캄파니 웨이퍼 처리 장치
US8366830B2 (en) * 2003-03-04 2013-02-05 Cree, Inc. Susceptor apparatus for inverted type MOCVD reactor
JP4257576B2 (ja) * 2003-03-25 2009-04-22 ローム株式会社 成膜装置
DE10320597A1 (de) * 2003-04-30 2004-12-02 Aixtron Ag Verfahren und Vorrichtung zum Abscheiden von Halbleiterschichten mit zwei Prozessgasen, von denen das eine vorkonditioniert ist
JP3929939B2 (ja) * 2003-06-25 2007-06-13 株式会社東芝 処理装置、製造装置、処理方法及び電子装置の製造方法
US6991003B2 (en) * 2003-07-28 2006-01-31 M.Braun, Inc. System and method for automatically purifying solvents
JP4599816B2 (ja) * 2003-08-01 2010-12-15 信越半導体株式会社 シリコンエピタキシャルウェーハの製造方法
US7024105B2 (en) * 2003-10-10 2006-04-04 Applied Materials Inc. Substrate heater assembly
US6897162B2 (en) * 2003-10-20 2005-05-24 Wafermasters, Inc. Integrated ashing and implant annealing method
JP5630935B2 (ja) * 2003-12-19 2014-11-26 マトソン テクノロジー、インコーポレイテッド 工作物の熱誘起運動を抑制する機器及び装置
US7190889B2 (en) * 2004-05-17 2007-03-13 Neocera, Llc Non-contact heater and method for non-contact heating of a substrate for material deposition
DE102004025150B4 (de) * 2004-05-21 2019-05-09 Mattson Technology, Inc. Lagebestimmung eines Halbleitersubstrats auf einer Rotationsvorrichtung
JP4925571B2 (ja) * 2004-08-09 2012-04-25 アプライド マテリアルズ インコーポレイテッド 基板の熱的性質判定方法及び熱処理条件の決定方法
DE102004039443B4 (de) * 2004-08-13 2023-05-25 Beijing E-Town Semiconductor Technology, Co., Ltd. Verfahren zum thermischen Behandeln von scheibenförmigen Substraten
US7785456B2 (en) * 2004-10-19 2010-08-31 Jds Uniphase Corporation Magnetic latch for a vapour deposition system
DK1630260T3 (da) * 2004-08-20 2011-10-31 Jds Uniphase Inc Magnetisk holdemekanisme til et dampudfældningssystem
US7332195B2 (en) * 2004-08-26 2008-02-19 Honeywell International Inc. Chemical vapor deposition method
JP2006190795A (ja) * 2005-01-06 2006-07-20 Matsushita Electric Ind Co Ltd 半導体装置の製造方法および急速熱処理装置
JP4934595B2 (ja) * 2005-01-18 2012-05-16 エーエスエム アメリカ インコーポレイテッド 薄膜成長用反応装置
US7275861B2 (en) * 2005-01-31 2007-10-02 Veeco Instruments Inc. Calibration wafer and method of calibrating in situ temperatures
EP1688534A1 (de) * 2005-02-02 2006-08-09 Wolff Cellulosics GmbH & Co.KG Verwendung von Arabinoxylanen in der Papierherstellung
US7598477B2 (en) * 2005-02-07 2009-10-06 Guy Smith Vacuum muffle quench furnace
US7402778B2 (en) * 2005-04-29 2008-07-22 Asm Assembly Automation Ltd. Oven for controlled heating of compounds at varying temperatures
JP2008546203A (ja) * 2005-06-01 2008-12-18 マットソン テクノロジー インコーポレイテッド パルス化された加熱処理の間に熱収支を最適化する方法
US20060281310A1 (en) * 2005-06-08 2006-12-14 Applied Materials, Inc. Rotating substrate support and methods of use
EP1739213B1 (de) * 2005-07-01 2011-04-13 Freiberger Compound Materials GmbH Vorrichtung und Verfahren zum Tempern von III-V-Wafern sowie getemperte III-V-Halbleitereinkristallwafer
EP1760170B1 (de) 2005-09-05 2011-04-06 Japan Pionics Co., Ltd. Vorrichtung zur chemischen Dampfabscheidung
US7905109B2 (en) * 2005-09-14 2011-03-15 Taiwan Semiconductor Manufacturing Co., Ltd. Rapid cooling system for RTP chamber
JP5017950B2 (ja) * 2005-09-21 2012-09-05 株式会社Ｓｕｍｃｏ エピタキシャル成長装置の温度管理方法
US7794667B2 (en) * 2005-10-19 2010-09-14 Moore Epitaxial, Inc. Gas ring and method of processing substrates
JP4940635B2 (ja) * 2005-11-14 2012-05-30 東京エレクトロン株式会社 加熱装置、熱処理装置及び記憶媒体
US20070125303A1 (en) 2005-12-02 2007-06-07 Ward Ruby High-throughput deposition system for oxide thin film growth by reactive coevaportation
KR100745130B1 (ko) * 2006-02-09 2007-08-01 삼성전자주식회사 박막 증착 장치 및 방법
JP5105396B2 (ja) * 2006-04-12 2012-12-26 東京応化工業株式会社 加熱処理装置
US20070281106A1 (en) * 2006-05-30 2007-12-06 Applied Materials, Inc. Process chamber for dielectric gapfill
WO2007142850A2 (en) * 2006-06-02 2007-12-13 Applied Materials Gas flow control by differential pressure measurements
US8571396B2 (en) * 2006-06-26 2013-10-29 Tp Solar, Inc. Rapid thermal firing IR conveyor furnace having high intensity heating section
US9301340B2 (en) 2006-06-26 2016-03-29 Tp Solar, Inc. IR conveyor furnace having single belt with multiple independently controlled processing lanes
US8956457B2 (en) * 2006-09-08 2015-02-17 Tokyo Electron Limited Thermal processing system for curing dielectric films
KR100867191B1 (ko) * 2006-11-02 2008-11-06 주식회사 유진테크 기판처리장치 및 기판처리방법
US8454356B2 (en) 2006-11-15 2013-06-04 Mattson Technology, Inc. Systems and methods for supporting a workpiece during heat-treating
TW200836578A (en) * 2006-11-27 2008-09-01 Momentive Performance Mat Inc Quartz encapsulated heater and heater assembly thereof
KR100790729B1 (ko) * 2006-12-11 2008-01-02 삼성전기주식회사 화학 기상 증착 장치
JP2008182180A (ja) * 2006-12-26 2008-08-07 Epicrew Inc 加熱装置及び半導体製造装置
ATE532609T1 (de) * 2007-02-01 2011-11-15 Ibp Conex Ltd Einführ- und freigabewerkzeug für rohrverbindungsanordnung und verfahren zur verwendung solch eines werkzeugs
US8610033B1 (en) * 2007-03-29 2013-12-17 Moore Epitaxial, Inc. Rapid thermal process reactor utilizing a low profile dome
WO2008142747A1 (ja) * 2007-05-16 2008-11-27 Canon Anelva Corporation 加熱処理装置
JP4288309B2 (ja) * 2007-09-03 2009-07-01 キヤノンアネルバ株式会社 基板熱処理装置及び基板の熱処理方法
US8372327B2 (en) * 2007-09-13 2013-02-12 The Boeing Company Method for resin transfer molding composite parts
US8017059B2 (en) 2007-09-13 2011-09-13 The Boeing Company Composite fabrication apparatus and method
US20090075491A1 (en) * 2007-09-13 2009-03-19 Tokyo Electron Limited Method for curing a dielectric film
US8375758B1 (en) 2007-09-13 2013-02-19 The Boeing Company Induction forming of metal components with slotted susceptors
US8865050B2 (en) 2010-03-16 2014-10-21 The Boeing Company Method for curing a composite part layup
JP5444607B2 (ja) * 2007-10-31 2014-03-19 株式会社Ｓｕｍｃｏ エピタキシャル膜形成装置用のサセプタ、エピタキシャル膜形成装置、エピタキシャルウェーハの製造方法
US7964040B2 (en) * 2007-11-08 2011-06-21 Applied Materials, Inc. Multi-port pumping system for substrate processing chambers
US20090120368A1 (en) * 2007-11-08 2009-05-14 Applied Materials, Inc. Rotating temperature controlled substrate pedestal for film uniformity
KR100906341B1 (ko) 2007-11-22 2009-07-06 에이피시스템 주식회사 급속열처리용 기판회전요동장치
JP5283370B2 (ja) * 2007-11-29 2013-09-04 株式会社ニューフレアテクノロジー 気相成長装置および気相成長方法
KR100962044B1 (ko) * 2007-12-06 2010-06-08 성균관대학교산학협력단 저유전 플라즈마 중합체 박막 및 그 제조 방법
US8999106B2 (en) * 2007-12-19 2015-04-07 Applied Materials, Inc. Apparatus and method for controlling edge performance in an inductively coupled plasma chamber
US8404049B2 (en) 2007-12-27 2013-03-26 Memc Electronic Materials, Inc. Epitaxial barrel susceptor having improved thickness uniformity
US8314368B2 (en) * 2008-02-22 2012-11-20 Applied Materials, Inc. Silver reflectors for semiconductor processing chambers
US20090214843A1 (en) * 2008-02-26 2009-08-27 Siltronic Corporation Controlled edge resistivity in a silicon wafer
WO2009108221A2 (en) * 2008-02-27 2009-09-03 S.O.I.Tec Silicon On Insulator Technologies Thermalization of gaseous precursors in cvd reactors
US20090226695A1 (en) * 2008-03-06 2009-09-10 Tokyo Electron Limited Method for treating a dielectric film with infrared radiation
US20090226694A1 (en) * 2008-03-06 2009-09-10 Tokyo Electron Limited POROUS SiCOH-CONTAINING DIELECTRIC FILM AND A METHOD OF PREPARING
US7977256B2 (en) * 2008-03-06 2011-07-12 Tokyo Electron Limited Method for removing a pore-generating material from an uncured low-k dielectric film
US20090269939A1 (en) * 2008-04-25 2009-10-29 Asm International, N.V. Cyclical oxidation process
CN104313529A (zh) * 2008-05-01 2015-01-28 萨莫希雷梅克斯公司 制造烹饪器具的方法
US8398777B2 (en) 2008-05-02 2013-03-19 Applied Materials, Inc. System and method for pedestal adjustment
CN102089873A (zh) 2008-05-16 2011-06-08 加拿大马特森技术有限公司 工件破损防止方法及设备
US20090308315A1 (en) * 2008-06-13 2009-12-17 Asm International N.V. Semiconductor processing apparatus with improved thermal characteristics and method for providing the same
CN101308981A (zh) * 2008-07-11 2008-11-19 永泰电子（东莞）有限公司 一种运用红外线加热的焊接工艺及焊接装置
US20100059182A1 (en) * 2008-09-05 2010-03-11 Jusung Engineering Co., Ltd. Substrate processing apparatus
US20100065758A1 (en) * 2008-09-16 2010-03-18 Tokyo Electron Limited Dielectric material treatment system and method of operating
US20100068897A1 (en) * 2008-09-16 2010-03-18 Tokyo Electron Limited Dielectric treatment platform for dielectric film deposition and curing
US8895942B2 (en) * 2008-09-16 2014-11-25 Tokyo Electron Limited Dielectric treatment module using scanning IR radiation source
US20100067886A1 (en) * 2008-09-16 2010-03-18 Tokyo Electron Limited Ir laser optics system for dielectric treatment module
KR101182502B1 (ko) * 2008-09-30 2012-09-12 도쿄엘렉트론가부시키가이샤 기판의 이상 배치 상태의 검지 방법, 기판 처리 방법, 컴퓨터 판독 가능한 기억 매체 및 기판 처리 장치
US20100095890A1 (en) * 2008-10-22 2010-04-22 Applied Materials, Inc. Gas supply system, pumping system, coating system, gas supply method, and pumping method
JP5123820B2 (ja) * 2008-10-27 2013-01-23 東京エレクトロン株式会社 基板処理装置の真空排気方法及び基板処理装置
US20100101491A1 (en) * 2008-10-29 2010-04-29 Asm Japan K.K. Wafer lift pins suspended and supported at underside of susceptor
US8801857B2 (en) 2008-10-31 2014-08-12 Asm America, Inc. Self-centering susceptor ring assembly
US8209833B2 (en) * 2008-11-07 2012-07-03 Tokyo Electron Limited Thermal processing system and method of using
US10378106B2 (en) 2008-11-14 2019-08-13 Asm Ip Holding B.V. Method of forming insulation film by modified PEALD
US8110435B2 (en) * 2008-12-18 2012-02-07 Jusung Engineering Co., Ltd. Method and apparatus for manufacturing semiconductor device
TWI465599B (zh) * 2008-12-29 2014-12-21 K C Tech Co Ltd 原子層沉積裝置
CN102308381B (zh) * 2009-02-11 2014-08-13 应用材料公司 非接触性基板处理
US9127340B2 (en) * 2009-02-13 2015-09-08 Asm International N.V. Selective oxidation process
US8889565B2 (en) * 2009-02-13 2014-11-18 Asm International N.V. Selective removal of oxygen from metal-containing materials
KR101091369B1 (ko) 2009-02-17 2011-12-07 엘지이노텍 주식회사 반도체 제조장치
JP5438992B2 (ja) * 2009-02-20 2014-03-12 昭和電工株式会社 炭化珪素半導体装置の製造方法
US7829457B2 (en) * 2009-02-20 2010-11-09 Asm International N.V. Protection of conductors from oxidation in deposition chambers
US8298629B2 (en) * 2009-02-25 2012-10-30 Crystal Solar Incorporated High throughput multi-wafer epitaxial reactor
US8673081B2 (en) * 2009-02-25 2014-03-18 Crystal Solar, Inc. High throughput multi-wafer epitaxial reactor
JP2010205922A (ja) * 2009-03-03 2010-09-16 Canon Anelva Corp 基板熱処理装置及び基板の製造方法
US20100240224A1 (en) * 2009-03-20 2010-09-23 Taiwan Semiconductor Manufactruing Co., Ltd. Multi-zone semiconductor furnace
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
KR101536257B1 (ko) * 2009-07-22 2015-07-13 한국에이에스엠지니텍 주식회사 수평 흐름 증착 장치 및 이를 이용한 증착 방법
US8802201B2 (en) 2009-08-14 2014-08-12 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US20110185969A1 (en) * 2009-08-21 2011-08-04 Varian Semiconductor Equipment Associates, Inc. Dual heating for precise wafer temperature control
JP2013503414A (ja) * 2009-08-26 2013-01-31 ビーコ・インスツルメンツ・インコーポレーテッド 磁気記録媒体上にパターンを製造するためのシステム
JP5357689B2 (ja) * 2009-10-02 2013-12-04 三洋電機株式会社 触媒ｃｖｄ装置、膜の形成方法、太陽電池の製造方法及び基材の保持体
JP5310512B2 (ja) * 2009-12-02 2013-10-09 東京エレクトロン株式会社 基板処理装置
US8242033B2 (en) * 2009-12-08 2012-08-14 Corning Incorporated High throughput recrystallization of semiconducting materials
JP2011171450A (ja) * 2010-02-17 2011-09-01 Nuflare Technology Inc 成膜装置および成膜方法
US20110209995A1 (en) * 2010-03-01 2011-09-01 Applied Materials, Inc. Physical Vapor Deposition With A Variable Capacitive Tuner and Feedback Circuit
EP2368860A1 (de) * 2010-03-01 2011-09-28 Saint-Gobain Glass France Vorrichtung und Verfahren zur Substratprozessierung
US20110232677A1 (en) * 2010-03-29 2011-09-29 Tokyo Electron Limited Method for cleaning low-k dielectrics
US8507388B2 (en) 2010-04-26 2013-08-13 Asm International N.V. Prevention of oxidation of substrate surfaces in process chambers
TWI398545B (zh) * 2010-04-29 2013-06-11 Chi Mei Lighting Tech Corp 有機金屬化學氣相沉積機台
FR2959757B1 (fr) * 2010-05-04 2012-08-03 Global Technologies Reacteur pyrolytique a chauffage bilateral
US20120181265A1 (en) * 2010-07-15 2012-07-19 Despatch Industries Limited Partnership Firing furnace configuration for thermal processing system
WO2012012376A1 (en) * 2010-07-22 2012-01-26 First Solar, Inc Deposition system
US8535445B2 (en) * 2010-08-13 2013-09-17 Veeco Instruments Inc. Enhanced wafer carrier
TWI489075B (zh) * 2010-09-28 2015-06-21 Ｔｐ太陽能公司 具有高反射率加熱區段的快速點火ｉｒ輸送帶爐
CH703545B1 (de) * 2010-10-04 2012-02-15 Rene Meier Verfahren zur Herstellung von elektroaktiviertem Wasser.
JP5549552B2 (ja) * 2010-11-12 2014-07-16 東京エレクトロン株式会社 真空処理装置の組み立て方法及び真空処理装置
DE102010054919A1 (de) * 2010-12-17 2012-06-21 Centrotherm Photovoltaics Ag Vorrichtung und Verfahren zum thermischen Behandeln von Substraten
US20120180954A1 (en) 2011-01-18 2012-07-19 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US9915475B2 (en) * 2011-04-12 2018-03-13 Jiaxiong Wang Assembled reactor for fabrications of thin film solar cell absorbers through roll-to-roll processes
CN107022789B (zh) 2011-05-27 2021-03-12 斯瓦高斯技术股份有限公司 在外延反应器中的硅衬底上外延沉积硅晶片的方法
US9312155B2 (en) 2011-06-06 2016-04-12 Asm Japan K.K. High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
US10364496B2 (en) 2011-06-27 2019-07-30 Asm Ip Holding B.V. Dual section module having shared and unshared mass flow controllers
US10854498B2 (en) 2011-07-15 2020-12-01 Asm Ip Holding B.V. Wafer-supporting device and method for producing same
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US9017481B1 (en) 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
CN104040691B (zh) * 2011-12-27 2016-09-07 佳能安内华股份有限公司 基板热处理装置
US20130171350A1 (en) * 2011-12-29 2013-07-04 Intermolecular Inc. High Throughput Processing Using Metal Organic Chemical Vapor Deposition
US20130196053A1 (en) * 2012-01-10 2013-08-01 State of Oregon acting by and through the State Board of Higher Education on behalf of Oregon Stat Flow cell design for uniform residence time fluid flow
USD726133S1 (en) 2012-03-20 2015-04-07 Veeco Instruments Inc. Keyed spindle
USD712852S1 (en) 2012-03-20 2014-09-09 Veeco Instruments Inc. Spindle key
US9816184B2 (en) 2012-03-20 2017-11-14 Veeco Instruments Inc. Keyed wafer carrier
US9401271B2 (en) * 2012-04-19 2016-07-26 Sunedison Semiconductor Limited (Uen201334164H) Susceptor assemblies for supporting wafers in a reactor apparatus
EP2660574A1 (de) * 2012-05-04 2013-11-06 LayTec AG Flache lichtemittierende Platte zur Simulation von Wärmestrahlung, Verfahren zur Kalibrierung eines Pyrometers und Verfahren zur Bestimmung der Temperatur eines Halbleiter-Wafers
US9659799B2 (en) 2012-08-28 2017-05-23 Asm Ip Holding B.V. Systems and methods for dynamic semiconductor process scheduling
US8889566B2 (en) 2012-09-11 2014-11-18 Applied Materials, Inc. Low cost flowable dielectric films
US9021985B2 (en) 2012-09-12 2015-05-05 Asm Ip Holdings B.V. Process gas management for an inductively-coupled plasma deposition reactor
KR101440307B1 (ko) * 2012-09-17 2014-09-18 주식회사 유진테크 기판처리장치
US9406538B2 (en) * 2012-10-09 2016-08-02 Applied Materials, Inc. Indexed inline substrate processing tool
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
US20140120735A1 (en) * 2012-10-31 2014-05-01 Macronix International Co., Ltd. Semiconductor process gas flow control apparatus
JP5904101B2 (ja) * 2012-11-22 2016-04-13 豊田合成株式会社 化合物半導体の製造装置およびウェハ保持体
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
EP3514700A1 (de) * 2013-02-20 2019-07-24 Hartford Steam Boiler Inspection and Insurance Company System und verfahren zur dynamischen verringerung der ausreissertendenz
US9484191B2 (en) 2013-03-08 2016-11-01 Asm Ip Holding B.V. Pulsed remote plasma method and system
US9589770B2 (en) 2013-03-08 2017-03-07 Asm Ip Holding B.V. Method and systems for in-situ formation of intermediate reactive species
JP6027929B2 (ja) * 2013-03-29 2016-11-16 大陽日酸株式会社 気相成長装置の調整方法
JP6293135B2 (ja) * 2013-06-06 2018-03-14 イビデン株式会社 ウエハキャリアおよびこれを用いたエピタキシャル成長装置
US9580806B2 (en) * 2013-08-29 2017-02-28 Applied Materials, Inc. Method of processing a substrate support assembly
KR102434364B1 (ko) * 2013-09-06 2022-08-19 어플라이드 머티어리얼스, 인코포레이티드 원형 램프 어레이들
US9240412B2 (en) 2013-09-27 2016-01-19 Asm Ip Holding B.V. Semiconductor structure and device and methods of forming same using selective epitaxial process
CN105745741B (zh) * 2013-11-22 2019-11-08 应用材料公司 易取灯头
EP3100298B1 (de) * 2014-01-27 2020-07-15 Veeco Instruments Inc. Waferträger mit haltetaschen mit verbundradien für systeme zur chemischen dampfphasenabscheidung
US10683571B2 (en) 2014-02-25 2020-06-16 Asm Ip Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
JP6303592B2 (ja) * 2014-02-25 2018-04-04 東京エレクトロン株式会社 基板処理装置
US10167557B2 (en) 2014-03-18 2019-01-01 Asm Ip Holding B.V. Gas distribution system, reactor including the system, and methods of using the same
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
WO2015179387A1 (en) * 2014-05-21 2015-11-26 Brewer Science Inc. Multi-size adaptable spin chuck system
US9412581B2 (en) 2014-07-16 2016-08-09 Applied Materials, Inc. Low-K dielectric gapfill by flowable deposition
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US9890456B2 (en) 2014-08-21 2018-02-13 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds
US9657845B2 (en) 2014-10-07 2017-05-23 Asm Ip Holding B.V. Variable conductance gas distribution apparatus and method
US10941490B2 (en) * 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
KR102300403B1 (ko) 2014-11-19 2021-09-09 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
KR102263121B1 (ko) 2014-12-22 2021-06-09 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 및 그 제조 방법
JP6094605B2 (ja) * 2015-01-20 2017-03-15 トヨタ自動車株式会社 単結晶製造装置
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US10529542B2 (en) 2015-03-11 2020-01-07 Asm Ip Holdings B.V. Cross-flow reactor and method
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
WO2016164569A1 (en) * 2015-04-07 2016-10-13 Applied Materials, Inc. Process gas preheating systems and methods for double-sided multi-substrate batch processing
US9627239B2 (en) 2015-05-29 2017-04-18 Veeco Instruments Inc. Wafer surface 3-D topography mapping based on in-situ tilt measurements in chemical vapor deposition systems
US10597779B2 (en) * 2015-06-05 2020-03-24 Applied Materials, Inc. Susceptor position and rational apparatus and methods of use
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US10600673B2 (en) 2015-07-07 2020-03-24 Asm Ip Holding B.V. Magnetic susceptor to baseplate seal
US10043661B2 (en) 2015-07-13 2018-08-07 Asm Ip Holding B.V. Method for protecting layer by forming hydrocarbon-based extremely thin film
US10083836B2 (en) 2015-07-24 2018-09-25 Asm Ip Holding B.V. Formation of boron-doped titanium metal films with high work function
KR20170016562A (ko) 2015-08-03 2017-02-14 삼성전자주식회사 박막 증착 장치
US10932323B2 (en) 2015-08-03 2021-02-23 Alta Devices, Inc. Reflector and susceptor assembly for chemical vapor deposition reactor
US9960072B2 (en) 2015-09-29 2018-05-01 Asm Ip Holding B.V. Variable adjustment for precise matching of multiple chamber cavity housings
EP3360155B1 (de) * 2015-10-09 2022-10-05 Applied Materials, Inc. Diodenlaser für waferheizung für epi-verfahren
US10211308B2 (en) 2015-10-21 2019-02-19 Asm Ip Holding B.V. NbMC layers
DE102015220924B4 (de) * 2015-10-27 2018-09-27 Siltronic Ag Suszeptor zum Halten einer Halbleiterscheibe mit Orientierungskerbe, Verfahren zum Abscheiden einer Schicht auf einer Halbleiterscheibe und Halbleiterscheibe
US10322384B2 (en) 2015-11-09 2019-06-18 Asm Ip Holding B.V. Counter flow mixer for process chamber
US20170178758A1 (en) * 2015-12-18 2017-06-22 Applied Materials, Inc. Uniform wafer temperature achievement in unsymmetric chamber environment
JP6539578B2 (ja) 2015-12-22 2019-07-03 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置および熱処理方法
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US10428425B2 (en) * 2016-01-26 2019-10-01 Tokyo Electron Limited Film deposition apparatus, method of depositing film, and non-transitory computer-readable recording medium
US10468251B2 (en) 2016-02-19 2019-11-05 Asm Ip Holding B.V. Method for forming spacers using silicon nitride film for spacer-defined multiple patterning
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
JP7091249B2 (ja) 2016-03-02 2022-06-27 ワットロー・エレクトリック・マニュファクチャリング・カンパニー ヒータ作動フローバイパス
US10501866B2 (en) 2016-03-09 2019-12-10 Asm Ip Holding B.V. Gas distribution apparatus for improved film uniformity in an epitaxial system
US10343920B2 (en) 2016-03-18 2019-07-09 Asm Ip Holding B.V. Aligned carbon nanotubes
US9892913B2 (en) 2016-03-24 2018-02-13 Asm Ip Holding B.V. Radial and thickness control via biased multi-port injection settings
CN117107221A (zh) * 2016-03-28 2023-11-24 应用材料公司 基座支撑件
US10865475B2 (en) 2016-04-21 2020-12-15 Asm Ip Holding B.V. Deposition of metal borides and silicides
US10190213B2 (en) 2016-04-21 2019-01-29 Asm Ip Holding B.V. Deposition of metal borides
US10087522B2 (en) 2016-04-21 2018-10-02 Asm Ip Holding B.V. Deposition of metal borides
US10367080B2 (en) 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
US10032628B2 (en) 2016-05-02 2018-07-24 Asm Ip Holding B.V. Source/drain performance through conformal solid state doping
KR102592471B1 (ko) 2016-05-17 2023-10-20 에이에스엠 아이피 홀딩 비.브이. 금속 배선 형성 방법 및 이를 이용한 반도체 장치의 제조 방법
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US10388509B2 (en) 2016-06-28 2019-08-20 Asm Ip Holding B.V. Formation of epitaxial layers via dislocation filtering
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US9793135B1 (en) 2016-07-14 2017-10-17 ASM IP Holding B.V Method of cyclic dry etching using etchant film
US10714385B2 (en) 2016-07-19 2020-07-14 Asm Ip Holding B.V. Selective deposition of tungsten
KR102354490B1 (ko) 2016-07-27 2022-01-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
US10395919B2 (en) 2016-07-28 2019-08-27 Asm Ip Holding B.V. Method and apparatus for filling a gap
KR102532607B1 (ko) 2016-07-28 2023-05-15 에이에스엠 아이피 홀딩 비.브이. 기판 가공 장치 및 그 동작 방법
US10177025B2 (en) 2016-07-28 2019-01-08 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10446420B2 (en) * 2016-08-19 2019-10-15 Applied Materials, Inc. Upper cone for epitaxy chamber
US10090316B2 (en) 2016-09-01 2018-10-02 Asm Ip Holding B.V. 3D stacked multilayer semiconductor memory using doped select transistor channel
US10410943B2 (en) 2016-10-13 2019-09-10 Asm Ip Holding B.V. Method for passivating a surface of a semiconductor and related systems
US10643826B2 (en) 2016-10-26 2020-05-05 Asm Ip Holdings B.V. Methods for thermally calibrating reaction chambers
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10643904B2 (en) 2016-11-01 2020-05-05 Asm Ip Holdings B.V. Methods for forming a semiconductor device and related semiconductor device structures
US10229833B2 (en) 2016-11-01 2019-03-12 Asm Ip Holding B.V. Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10435790B2 (en) 2016-11-01 2019-10-08 Asm Ip Holding B.V. Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap
US10134757B2 (en) 2016-11-07 2018-11-20 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by using the method
KR102546317B1 (ko) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기체 공급 유닛 및 이를 포함하는 기판 처리 장치
US10340135B2 (en) 2016-11-28 2019-07-02 Asm Ip Holding B.V. Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride
KR20180068582A (ko) 2016-12-14 2018-06-22 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US9916980B1 (en) 2016-12-15 2018-03-13 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
KR102700194B1 (ko) 2016-12-19 2024-08-28 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10867788B2 (en) 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US10655221B2 (en) 2017-02-09 2020-05-19 Asm Ip Holding B.V. Method for depositing oxide film by thermal ALD and PEALD
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10529563B2 (en) 2017-03-29 2020-01-07 Asm Ip Holdings B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
US10283353B2 (en) 2017-03-29 2019-05-07 Asm Ip Holding B.V. Method of reforming insulating film deposited on substrate with recess pattern
US10103040B1 (en) 2017-03-31 2018-10-16 Asm Ip Holding B.V. Apparatus and method for manufacturing a semiconductor device
USD830981S1 (en) 2017-04-07 2018-10-16 Asm Ip Holding B.V. Susceptor for semiconductor substrate processing apparatus
KR102457289B1 (ko) 2017-04-25 2022-10-21 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10892156B2 (en) 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10446393B2 (en) 2017-05-08 2019-10-15 Asm Ip Holding B.V. Methods for forming silicon-containing epitaxial layers and related semiconductor device structures
US10504742B2 (en) 2017-05-31 2019-12-10 Asm Ip Holding B.V. Method of atomic layer etching using hydrogen plasma
US10886123B2 (en) 2017-06-02 2021-01-05 Asm Ip Holding B.V. Methods for forming low temperature semiconductor layers and related semiconductor device structures
US12040200B2 (en) 2017-06-20 2024-07-16 Asm Ip Holding B.V. Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
JP6836965B2 (ja) * 2017-06-23 2021-03-03 昭和電工株式会社 成膜装置
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US10685834B2 (en) 2017-07-05 2020-06-16 Asm Ip Holdings B.V. Methods for forming a silicon germanium tin layer and related semiconductor device structures
KR20190009245A (ko) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US10541333B2 (en) 2017-07-19 2020-01-21 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10312055B2 (en) 2017-07-26 2019-06-04 Asm Ip Holding B.V. Method of depositing film by PEALD using negative bias
US10605530B2 (en) 2017-07-26 2020-03-31 Asm Ip Holding B.V. Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US10249524B2 (en) 2017-08-09 2019-04-02 Asm Ip Holding B.V. Cassette holder assembly for a substrate cassette and holding member for use in such assembly
US10236177B1 (en) 2017-08-22 2019-03-19 ASM IP Holding B.V.. Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures
USD900036S1 (en) 2017-08-24 2020-10-27 Asm Ip Holding B.V. Heater electrical connector and adapter
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
KR102491945B1 (ko) 2017-08-30 2023-01-26 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
KR102401446B1 (ko) 2017-08-31 2022-05-24 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10607895B2 (en) 2017-09-18 2020-03-31 Asm Ip Holdings B.V. Method for forming a semiconductor device structure comprising a gate fill metal
KR102630301B1 (ko) 2017-09-21 2024-01-29 에이에스엠 아이피 홀딩 비.브이. 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치
US10844484B2 (en) 2017-09-22 2020-11-24 Asm Ip Holding B.V. Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10319588B2 (en) 2017-10-10 2019-06-11 Asm Ip Holding B.V. Method for depositing a metal chalcogenide on a substrate by cyclical deposition
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
US10872803B2 (en) 2017-11-03 2020-12-22 Asm Ip Holding B.V. Apparatus and methods for isolating a reaction chamber from a loading chamber resulting in reduced contamination
US10872804B2 (en) 2017-11-03 2020-12-22 Asm Ip Holding B.V. Apparatus and methods for isolating a reaction chamber from a loading chamber resulting in reduced contamination
US10910262B2 (en) 2017-11-16 2021-02-02 Asm Ip Holding B.V. Method of selectively depositing a capping layer structure on a semiconductor device structure
KR102443047B1 (ko) 2017-11-16 2022-09-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 방법 및 그에 의해 제조된 장치
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
JP7214724B2 (ja) 2017-11-27 2023-01-30 エーエスエム アイピー ホールディング ビー．ブイ． バッチ炉で利用されるウェハカセットを収納するための収納装置
WO2019103610A1 (en) 2017-11-27 2019-05-31 Asm Ip Holding B.V. Apparatus including a clean mini environment
US10290508B1 (en) 2017-12-05 2019-05-14 Asm Ip Holding B.V. Method for forming vertical spacers for spacer-defined patterning
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
CN111630203A (zh) 2018-01-19 2020-09-04 Asm Ip私人控股有限公司 通过等离子体辅助沉积来沉积间隙填充层的方法
TWI799494B (zh) 2018-01-19 2023-04-21 荷蘭商Ａｓｍ 智慧財產控股公司 沈積方法
USD903477S1 (en) 2018-01-24 2020-12-01 Asm Ip Holdings B.V. Metal clamp
US11018047B2 (en) 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
USD880437S1 (en) 2018-02-01 2020-04-07 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US10535516B2 (en) 2018-02-01 2020-01-14 Asm Ip Holdings B.V. Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
JP7124098B2 (ja) 2018-02-14 2022-08-23 エーエスエム・アイピー・ホールディング・ベー・フェー 周期的堆積プロセスにより基材上にルテニウム含有膜を堆積させる方法
US10731249B2 (en) 2018-02-15 2020-08-04 Asm Ip Holding B.V. Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
US10658181B2 (en) 2018-02-20 2020-05-19 Asm Ip Holding B.V. Method of spacer-defined direct patterning in semiconductor fabrication
KR102636427B1 (ko) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 장치
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
KR102646467B1 (ko) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
US10510536B2 (en) 2018-03-29 2019-12-17 Asm Ip Holding B.V. Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber
KR102501472B1 (ko) 2018-03-30 2023-02-20 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
US12025484B2 (en) 2018-05-08 2024-07-02 Asm Ip Holding B.V. Thin film forming method
TWI843623B (zh) 2018-05-08 2024-05-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 藉由循環沉積製程於基板上沉積氧化物膜之方法及相關裝置結構
KR20190129718A (ko) 2018-05-11 2019-11-20 에이에스엠 아이피 홀딩 비.브이. 기판 상에 피도핑 금속 탄화물 막을 형성하는 방법 및 관련 반도체 소자 구조
CN112204169A (zh) * 2018-05-16 2021-01-08 应用材料公司 原子层自对准的基板处理和整合式成套工具
KR102596988B1 (ko) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 그에 의해 제조된 장치
TWI840362B (zh) 2018-06-04 2024-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 水氣降低的晶圓處置腔室
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
KR102568797B1 (ko) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 시스템
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
TW202409324A (zh) 2018-06-27 2024-03-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於形成含金屬材料之循環沉積製程
WO2020003000A1 (en) 2018-06-27 2020-01-02 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
KR102686758B1 (ko) 2018-06-29 2024-07-18 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10767789B2 (en) 2018-07-16 2020-09-08 Asm Ip Holding B.V. Diaphragm valves, valve components, and methods for forming valve components
US10483099B1 (en) 2018-07-26 2019-11-19 Asm Ip Holding B.V. Method for forming thermally stable organosilicon polymer film
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US10883175B2 (en) 2018-08-09 2021-01-05 Asm Ip Holding B.V. Vertical furnace for processing substrates and a liner for use therein
US10829852B2 (en) 2018-08-16 2020-11-10 Asm Ip Holding B.V. Gas distribution device for a wafer processing apparatus
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102707956B1 (ko) 2018-09-11 2024-09-19 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
TWI844567B (zh) 2018-10-01 2024-06-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基材保持裝置、含有此裝置之系統及其使用之方法
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102592699B1 (ko) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치
US10847365B2 (en) 2018-10-11 2020-11-24 Asm Ip Holding B.V. Method of forming conformal silicon carbide film by cyclic CVD
US10811256B2 (en) 2018-10-16 2020-10-20 Asm Ip Holding B.V. Method for etching a carbon-containing feature
KR102605121B1 (ko) 2018-10-19 2023-11-23 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
KR102546322B1 (ko) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US10381219B1 (en) 2018-10-25 2019-08-13 Asm Ip Holding B.V. Methods for forming a silicon nitride film
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR20200051105A (ko) 2018-11-02 2020-05-13 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 기판 처리 장치
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10559458B1 (en) 2018-11-26 2020-02-11 Asm Ip Holding B.V. Method of forming oxynitride film
US10883174B2 (en) * 2018-11-27 2021-01-05 Applied Materials, Inc. Gas diffuser mounting plate for reduced particle generation
US12040199B2 (en) 2018-11-28 2024-07-16 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
KR102636428B1 (ko) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치를 세정하는 방법
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
JP7504584B2 (ja) 2018-12-14 2024-06-24 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム
TWI819180B (zh) 2019-01-17 2023-10-21 荷蘭商Ａｓｍ 智慧財產控股公司 藉由循環沈積製程於基板上形成含過渡金屬膜之方法
USD920936S1 (en) 2019-01-17 2021-06-01 Asm Ip Holding B.V. Higher temperature vented susceptor
USD914620S1 (en) 2019-01-17 2021-03-30 Asm Ip Holding B.V. Vented susceptor
CN111446185A (zh) 2019-01-17 2020-07-24 Asm Ip 控股有限公司 通风基座
KR20200091543A (ko) 2019-01-22 2020-07-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
CN111524788B (zh) 2019-02-01 2023-11-24 Asm Ip私人控股有限公司 氧化硅的拓扑选择性膜形成的方法
JP2020136678A (ja) 2019-02-20 2020-08-31 エーエスエム・アイピー・ホールディング・ベー・フェー 基材表面内に形成された凹部を充填するための方法および装置
KR20200102357A (ko) 2019-02-20 2020-08-31 에이에스엠 아이피 홀딩 비.브이. 3-d nand 응용의 플러그 충진체 증착용 장치 및 방법
TWI845607B (zh) 2019-02-20 2024-06-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用來填充形成於基材表面內之凹部的循環沉積方法及設備
KR102626263B1 (ko) 2019-02-20 2024-01-16 에이에스엠 아이피 홀딩 비.브이. 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치
TWI842826B (zh) 2019-02-22 2024-05-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基材處理設備及處理基材之方法
KR20200108242A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체
US11742198B2 (en) 2019-03-08 2023-08-29 Asm Ip Holding B.V. Structure including SiOCN layer and method of forming same
KR20200108243A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. SiOC 층을 포함한 구조체 및 이의 형성 방법
KR20200116033A (ko) 2019-03-28 2020-10-08 에이에스엠 아이피 홀딩 비.브이. 도어 개방기 및 이를 구비한 기판 처리 장치
KR20200116855A (ko) 2019-04-01 2020-10-13 에이에스엠 아이피 홀딩 비.브이. 반도체 소자를 제조하는 방법
KR20200123380A (ko) 2019-04-19 2020-10-29 에이에스엠 아이피 홀딩 비.브이. 층 형성 방법 및 장치
KR20200125453A (ko) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. 기상 반응기 시스템 및 이를 사용하는 방법
KR20200130121A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 딥 튜브가 있는 화학물질 공급원 용기
KR20200130118A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 비정질 탄소 중합체 막을 개질하는 방법
KR20200130652A (ko) 2019-05-10 2020-11-19 에이에스엠 아이피 홀딩 비.브이. 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조
JP2020188254A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． ウェハボートハンドリング装置、縦型バッチ炉および方法
JP2020188255A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． ウェハボートハンドリング装置、縦型バッチ炉および方法
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
TWI845682B (zh) 2019-05-22 2024-06-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 工件基座主體
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
KR20200141003A (ko) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. 가스 감지기를 포함하는 기상 반응기 시스템
KR20200143254A (ko) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조
CN110211710B (zh) * 2019-06-12 2022-03-25 中国核动力研究设计院 一种多辐照目标材料辐照考验堆芯结构及布置和运行方法
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
KR20210005515A (ko) 2019-07-03 2021-01-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법
JP7499079B2 (ja) 2019-07-09 2024-06-13 エーエスエム・アイピー・ホールディング・ベー・フェー 同軸導波管を用いたプラズマ装置、基板処理方法
CN112216646A (zh) 2019-07-10 2021-01-12 Asm Ip私人控股有限公司 基板支撑组件及包括其的基板处理装置
KR20210010307A (ko) 2019-07-16 2021-01-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210010820A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 실리콘 게르마늄 구조를 형성하는 방법
KR20210010816A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 라디칼 보조 점화 플라즈마 시스템 및 방법
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
KR20210010817A (ko) 2019-07-19 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 토폴로지-제어된 비정질 탄소 중합체 막을 형성하는 방법
TWI839544B (zh) 2019-07-19 2024-04-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成形貌受控的非晶碳聚合物膜之方法
CN112309843A (zh) 2019-07-29 2021-02-02 Asm Ip私人控股有限公司 实现高掺杂剂掺入的选择性沉积方法
CN112309900A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
CN112309899A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
CN118422165A (zh) 2019-08-05 2024-08-02 Asm Ip私人控股有限公司 用于化学源容器的液位传感器
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
JP2021031769A (ja) 2019-08-21 2021-03-01 エーエスエム アイピー ホールディング ビー．ブイ． 成膜原料混合ガス生成装置及び成膜装置
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
KR20210024423A (ko) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 홀을 구비한 구조체를 형성하기 위한 방법
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
KR20210024420A (ko) 2019-08-23 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법
KR20210029090A (ko) 2019-09-04 2021-03-15 에이에스엠 아이피 홀딩 비.브이. 희생 캡핑 층을 이용한 선택적 증착 방법
KR20210029663A (ko) 2019-09-05 2021-03-16 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (zh) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法
KR20210042810A (ko) 2019-10-08 2021-04-20 에이에스엠 아이피 홀딩 비.브이. 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법
TWI846953B (zh) 2019-10-08 2024-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理裝置
KR20210043460A (ko) 2019-10-10 2021-04-21 에이에스엠 아이피 홀딩 비.브이. 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체
US12009241B2 (en) 2019-10-14 2024-06-11 Asm Ip Holding B.V. Vertical batch furnace assembly with detector to detect cassette
TWI834919B (zh) 2019-10-16 2024-03-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氧化矽之拓撲選擇性膜形成之方法
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR20210047808A (ko) 2019-10-21 2021-04-30 에이에스엠 아이피 홀딩 비.브이. 막을 선택적으로 에칭하기 위한 장치 및 방법
US11764101B2 (en) 2019-10-24 2023-09-19 ASM IP Holding, B.V. Susceptor for semiconductor substrate processing
KR20210050453A (ko) 2019-10-25 2021-05-07 에이에스엠 아이피 홀딩 비.브이. 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR20210054983A (ko) 2019-11-05 2021-05-14 에이에스엠 아이피 홀딩 비.브이. 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템
JP7236985B2 (ja) * 2019-11-15 2023-03-10 東京エレクトロン株式会社 温度計測システム、温度計測方法及び基板処理装置
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR20210062561A (ko) 2019-11-20 2021-05-31 에이에스엠 아이피 홀딩 비.브이. 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템
CN112951697A (zh) 2019-11-26 2021-06-11 Asm Ip私人控股有限公司 基板处理设备
KR20210065848A (ko) 2019-11-26 2021-06-04 에이에스엠 아이피 홀딩 비.브이. 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법
CN112885693A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
CN112885692A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
JP7527928B2 (ja) 2019-12-02 2024-08-05 エーエスエム・アイピー・ホールディング・ベー・フェー 基板処理装置、基板処理方法
KR20210070898A (ko) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
TW202125596A (zh) 2019-12-17 2021-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成氮化釩層之方法以及包括該氮化釩層之結構
US11527403B2 (en) 2019-12-19 2022-12-13 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
TW202140135A (zh) 2020-01-06 2021-11-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氣體供應總成以及閥板總成
KR20210089079A (ko) 2020-01-06 2021-07-15 에이에스엠 아이피 홀딩 비.브이. 채널형 리프트 핀
US11993847B2 (en) 2020-01-08 2024-05-28 Asm Ip Holding B.V. Injector
KR102675856B1 (ko) 2020-01-20 2024-06-17 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법 및 박막 표면 개질 방법
TW202130846A (zh) 2020-02-03 2021-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成包括釩或銦層的結構之方法
TW202146882A (zh) 2020-02-04 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 驗證一物品之方法、用於驗證一物品之設備、及用於驗證一反應室之系統
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
US11781243B2 (en) 2020-02-17 2023-10-10 Asm Ip Holding B.V. Method for depositing low temperature phosphorous-doped silicon
TW202203344A (zh) 2020-02-28 2022-01-16 荷蘭商Ａｓｍ Ｉｐ控股公司 專用於零件清潔的系統
KR20210116249A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 록아웃 태그아웃 어셈블리 및 시스템 그리고 이의 사용 방법
KR20210116240A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 조절성 접합부를 갖는 기판 핸들링 장치
CN113394086A (zh) 2020-03-12 2021-09-14 Asm Ip私人控股有限公司 用于制造具有目标拓扑轮廓的层结构的方法
KR20210124042A (ko) 2020-04-02 2021-10-14 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법
TW202146689A (zh) 2020-04-03 2021-12-16 荷蘭商Ａｓｍ Ｉｐ控股公司 阻障層形成方法及半導體裝置的製造方法
TW202145344A (zh) 2020-04-08 2021-12-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於選擇性蝕刻氧化矽膜之設備及方法
KR20210128343A (ko) 2020-04-15 2021-10-26 에이에스엠 아이피 홀딩 비.브이. 크롬 나이트라이드 층을 형성하는 방법 및 크롬 나이트라이드 층을 포함하는 구조
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
US11996289B2 (en) 2020-04-16 2024-05-28 Asm Ip Holding B.V. Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
KR20210132600A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템
JP2021172884A (ja) 2020-04-24 2021-11-01 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化バナジウム含有層を形成する方法および窒化バナジウム含有層を含む構造体
TW202146831A (zh) 2020-04-24 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 垂直批式熔爐總成、及用於冷卻垂直批式熔爐之方法
KR20210134226A (ko) 2020-04-29 2021-11-09 에이에스엠 아이피 홀딩 비.브이. 고체 소스 전구체 용기
KR20210134869A (ko) 2020-05-01 2021-11-11 에이에스엠 아이피 홀딩 비.브이. Foup 핸들러를 이용한 foup의 빠른 교환
TW202147543A (zh) 2020-05-04 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 半導體處理系統
KR20210141379A (ko) 2020-05-13 2021-11-23 에이에스엠 아이피 홀딩 비.브이. 반응기 시스템용 레이저 정렬 고정구
TW202146699A (zh) 2020-05-15 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成矽鍺層之方法、半導體結構、半導體裝置、形成沉積層之方法、及沉積系統
KR20210143653A (ko) 2020-05-19 2021-11-29 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210145078A (ko) 2020-05-21 2021-12-01 에이에스엠 아이피 홀딩 비.브이. 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법
KR102702526B1 (ko) 2020-05-22 2024-09-03 에이에스엠 아이피 홀딩 비.브이. 과산화수소를 사용하여 박막을 증착하기 위한 장치
TW202201602A (zh) 2020-05-29 2022-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
TW202212620A (zh) 2020-06-02 2022-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 處理基板之設備、形成膜之方法、及控制用於處理基板之設備之方法
TW202218133A (zh) 2020-06-24 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成含矽層之方法
TW202217953A (zh) 2020-06-30 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
KR102707957B1 (ko) 2020-07-08 2024-09-19 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
TW202219628A (zh) 2020-07-17 2022-05-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於光微影之結構與方法
TW202204662A (zh) 2020-07-20 2022-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於沉積鉬層之方法及系統
US12040177B2 (en) 2020-08-18 2024-07-16 Asm Ip Holding B.V. Methods for forming a laminate film by cyclical plasma-enhanced deposition processes
KR20220027026A (ko) 2020-08-26 2022-03-07 에이에스엠 아이피 홀딩 비.브이. 금속 실리콘 산화물 및 금속 실리콘 산질화물 층을 형성하기 위한 방법 및 시스템
TW202229601A (zh) 2020-08-27 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成圖案化結構的方法、操控機械特性的方法、裝置結構、及基板處理系統
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
US12009224B2 (en) 2020-09-29 2024-06-11 Asm Ip Holding B.V. Apparatus and method for etching metal nitrides
KR20220045900A (ko) 2020-10-06 2022-04-13 에이에스엠 아이피 홀딩 비.브이. 실리콘 함유 재료를 증착하기 위한 증착 방법 및 장치
CN114293174A (zh) 2020-10-07 2022-04-08 Asm Ip私人控股有限公司 气体供应单元和包括气体供应单元的衬底处理设备
TW202229613A (zh) 2020-10-14 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 於階梯式結構上沉積材料的方法
KR20220053482A (ko) 2020-10-22 2022-04-29 에이에스엠 아이피 홀딩 비.브이. 바나듐 금속을 증착하는 방법, 구조체, 소자 및 증착 어셈블리
TW202223136A (zh) 2020-10-28 2022-06-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於在基板上形成層之方法、及半導體處理系統
TW202235649A (zh) 2020-11-24 2022-09-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 填充間隙之方法與相關之系統及裝置
TW202235675A (zh) 2020-11-30 2022-09-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 注入器、及基板處理設備
USD1031676S1 (en) 2020-12-04 2024-06-18 Asm Ip Holding B.V. Combined susceptor, support, and lift system
US11946137B2 (en) 2020-12-16 2024-04-02 Asm Ip Holding B.V. Runout and wobble measurement fixtures
TW202231903A (zh) 2020-12-22 2022-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成
USD1023959S1 (en) 2021-05-11 2024-04-23 Asm Ip Holding B.V. Electrode for substrate processing apparatus
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate
WO2023210656A1 (ja) * 2022-04-27 2023-11-02 ローム株式会社 加熱処理装置、及びその動作方法

Family Cites Families (80)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3279946A (en) * 1962-08-14 1966-10-18 Merck & Co Inc Hydrogen chloride treatment of semiconductor coating chamber
DE1771305C3 (de) * 1968-05-03 1974-07-04 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Reinigen eines für die Halbleiterherstellung dienenden Behandlungsgefäßes aus Quarz
US3835751A (en) * 1971-10-06 1974-09-17 Leesona Corp Fluid operated system
US3862397A (en) * 1972-03-24 1975-01-21 Applied Materials Tech Cool wall radiantly heated reactor
US3783822A (en) * 1972-05-10 1974-01-08 J Wollam Apparatus for use in deposition of films from a vapor phase
US3836751A (en) * 1973-07-26 1974-09-17 Applied Materials Inc Temperature controlled profiling heater
US3916822A (en) * 1974-04-26 1975-11-04 Bell Telephone Labor Inc Chemical vapor deposition reactor
US4047496A (en) * 1974-05-31 1977-09-13 Applied Materials, Inc. Epitaxial radiation heated reactor
US4081313A (en) * 1975-01-24 1978-03-28 Applied Materials, Inc. Process for preparing semiconductor wafers with substantially no crystallographic slip
SE7710800L (sv) * 1976-10-05 1978-04-06 Western Electric Co Forfarande for astadkommande av ett epitaxiellt skikt pa ett substrat
US4101759A (en) * 1976-10-26 1978-07-18 General Electric Company Semiconductor body heater
US4407496A (en) 1981-12-14 1983-10-04 Johnson David E Limb exercise device
US4497683A (en) * 1982-05-03 1985-02-05 At&T Bell Laboratories Process for producing dielectrically isolated silicon devices
JPS58223320A (ja) * 1982-06-22 1983-12-24 Ushio Inc 不純物拡散方法
JPS59928A (ja) * 1982-06-25 1984-01-06 Ushio Inc 光加熱装置
US4545327A (en) * 1982-08-27 1985-10-08 Anicon, Inc. Chemical vapor deposition apparatus
JPS5959876A (ja) * 1982-09-30 1984-04-05 Ushio Inc 光照射炉の運転方法
JPS5977289A (ja) * 1982-10-26 1984-05-02 ウシオ電機株式会社 光照射炉
US4511788A (en) * 1983-02-09 1985-04-16 Ushio Denki Kabushiki Kaisha Light-radiant heating furnace
GB2136937A (en) * 1983-03-18 1984-09-26 Philips Electronic Associated A furnace for rapidly heating semiconductor bodies
US4649261A (en) * 1984-02-28 1987-03-10 Tamarack Scientific Co., Inc. Apparatus for heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation layers, etc.
US4511688A (en) * 1984-02-29 1985-04-16 The Dow Chemical Company Flame retardant for use in rigid polyurethane foams
US4560420A (en) * 1984-06-13 1985-12-24 At&T Technologies, Inc. Method for reducing temperature variations across a semiconductor wafer during heating
JPS61289624A (ja) * 1985-06-18 1986-12-19 Matsushita Electric Ind Co Ltd 気相成長装置
US4680451A (en) * 1985-07-29 1987-07-14 A. G. Associates Apparatus using high intensity CW lamps for improved heat treating of semiconductor wafers
US4798165A (en) * 1985-10-07 1989-01-17 Epsilon Apparatus for chemical vapor deposition using an axially symmetric gas flow
US4789771A (en) * 1985-10-07 1988-12-06 Epsilon Limited Partnership Method and apparatus for substrate heating in an axially symmetric epitaxial deposition apparatus
US4796562A (en) * 1985-12-03 1989-01-10 Varian Associates, Inc. Rapid thermal cvd apparatus
US5244501A (en) * 1986-07-26 1993-09-14 Nihon Shinku Gijutsu Kabushiki Kaisha Apparatus for chemical vapor deposition
EP0255454A3 (de) * 1986-07-26 1991-11-21 Nihon Shinku Gijutsu Kabushiki Kaisha Anordnung für chemischen Dampfniederschlag
US4902531A (en) * 1986-10-30 1990-02-20 Nihon Shinku Gijutsu Kabushiki Kaisha Vacuum processing method and apparatus
US4951601A (en) * 1986-12-19 1990-08-28 Applied Materials, Inc. Multi-chamber integrated process system
US4755654A (en) * 1987-03-26 1988-07-05 Crowley John L Semiconductor wafer heating chamber
US4821674A (en) * 1987-03-31 1989-04-18 Deboer Wiebe B Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment
US4823735A (en) * 1987-05-12 1989-04-25 Gemini Research, Inc. Reflector apparatus for chemical vapor deposition reactors
US4975561A (en) * 1987-06-18 1990-12-04 Epsilon Technology Inc. Heating system for substrates
US4836138A (en) * 1987-06-18 1989-06-06 Epsilon Technology, Inc. Heating system for reaction chamber of chemical vapor deposition equipment
US4828224A (en) * 1987-10-15 1989-05-09 Epsilon Technology, Inc. Chemical vapor deposition system
US5034199A (en) * 1987-11-13 1991-07-23 Kopin Corporation Zone melt recrystallization apparatus
US4851358A (en) * 1988-02-11 1989-07-25 Dns Electronic Materials, Inc. Semiconductor wafer fabrication with improved control of internal gettering sites using rapid thermal annealing
US4857689A (en) * 1988-03-23 1989-08-15 High Temperature Engineering Corporation Rapid thermal furnace for semiconductor processing
US4978567A (en) * 1988-03-31 1990-12-18 Materials Technology Corporation, Subsidiary Of The Carbon/Graphite Group, Inc. Wafer holding fixture for chemical reaction processes in rapid thermal processing equipment and method for making same
JP2654996B2 (ja) * 1988-08-17 1997-09-17 東京エレクトロン株式会社 縦型熱処理装置
US5226056A (en) * 1989-01-10 1993-07-06 Nihon Shinku Gijutsu Kabushiki Kaisha Plasma ashing method and apparatus therefor
JPH0834187B2 (ja) * 1989-01-13 1996-03-29 東芝セラミックス株式会社 サセプタ
US5053247A (en) * 1989-02-28 1991-10-01 Moore Epitaxial, Inc. Method for increasing the batch size of a barrel epitaxial reactor and reactor produced thereby
US5207835A (en) * 1989-02-28 1993-05-04 Moore Epitaxial, Inc. High capacity epitaxial reactor
US5169684A (en) * 1989-03-20 1992-12-08 Toyoko Kagaku Co., Ltd. Wafer supporting jig and a decompressed gas phase growth method using such a jig
US4920918A (en) * 1989-04-18 1990-05-01 Applied Materials, Inc. Pressure-resistant thermal reactor system for semiconductor processing
US5011794A (en) * 1989-05-01 1991-04-30 At&T Bell Laboratories Procedure for rapid thermal annealing of implanted semiconductors
US5156820A (en) * 1989-05-15 1992-10-20 Rapro Technology, Inc. Reaction chamber with controlled radiant energy heating and distributed reactant flow
US5104276A (en) * 1989-05-19 1992-04-14 Applied Materials, Inc. Robotically loaded epitaxial deposition apparatus
US4986838A (en) * 1989-06-14 1991-01-22 Airgard, Inc. Inlet system for gas scrubber
JPH04713A (ja) * 1989-12-26 1992-01-06 Sumitomo Metal Ind Ltd 基板の加熱装置
US5155336A (en) * 1990-01-19 1992-10-13 Applied Materials, Inc. Rapid thermal heating apparatus and method
US5077875A (en) * 1990-01-31 1992-01-07 Raytheon Company Reactor vessel for the growth of heterojunction devices
US5108792A (en) * 1990-03-09 1992-04-28 Applied Materials, Inc. Double-dome reactor for semiconductor processing
DE69126724T2 (de) * 1990-03-19 1998-01-15 Toshiba Kawasaki Kk Vorrichtung zur Dampfphasenabscheidung
US5098198A (en) * 1990-04-19 1992-03-24 Applied Materials, Inc. Wafer heating and monitor module and method of operation
US5060354A (en) * 1990-07-02 1991-10-29 George Chizinsky Heated plate rapid thermal processor
US5252807A (en) * 1990-07-02 1993-10-12 George Chizinsky Heated plate rapid thermal processor
US5044943A (en) * 1990-08-16 1991-09-03 Applied Materials, Inc. Spoked susceptor support for enhanced thermal uniformity of susceptor in semiconductor wafer processing apparatus
US5179677A (en) * 1990-08-16 1993-01-12 Applied Materials, Inc. Apparatus and method for substrate heating utilizing various infrared means to achieve uniform intensity
US5085887A (en) * 1990-09-07 1992-02-04 Applied Materials, Inc. Wafer reactor vessel window with pressure-thermal compensation
US5148714A (en) * 1990-10-24 1992-09-22 Ag Processing Technology, Inc. Rotary/linear actuator for closed chamber, and reaction chamber utilizing same
US5034100A (en) * 1990-11-28 1991-07-23 Wilbanks International Stationary drainage device with pressure roll
JPH04202091A (ja) * 1990-11-30 1992-07-22 Furukawa Electric Co Ltd:The 化合物半導体の気相成長装置
US5106200A (en) * 1990-12-20 1992-04-21 Applied Materials, Inc. Apparatus for measuring temperature of wafer
WO1992016671A1 (en) * 1991-03-20 1992-10-01 Canon Kabushiki Kaisha Method and device for forming film by sputtering process
JP2532401Y2 (ja) * 1991-04-16 1997-04-16 ソニー株式会社 バイアスｅｃｒプラズマｃｖｄ装置
US5446825A (en) * 1991-04-24 1995-08-29 Texas Instruments Incorporated High performance multi-zone illuminator module for semiconductor wafer processing
US5436172A (en) * 1991-05-20 1995-07-25 Texas Instruments Incorporated Real-time multi-zone semiconductor wafer temperature and process uniformity control system
US5536918A (en) * 1991-08-16 1996-07-16 Tokyo Electron Sagami Kabushiki Kaisha Heat treatment apparatus utilizing flat heating elements for treating semiconductor wafers
US5387557A (en) * 1991-10-23 1995-02-07 F. T. L. Co., Ltd. Method for manufacturing semiconductor devices using heat-treatment vertical reactor with temperature zones
US5152842A (en) * 1991-12-05 1992-10-06 Rohm Co., Ltd. Reactor for epitaxial growth
DE4140387C2 (de) * 1991-12-07 1998-10-15 Inst Halbleiterphysik Gmbh Vorrichtung und Verfahren zur verformungsfreien Bearbeitung von Halbleitermaterialscheiben in schnellen thermischen Prozessen
US5429498A (en) * 1991-12-13 1995-07-04 Tokyo Electron Sagami Kabushiki Kaisha Heat treatment method and apparatus thereof
US5431737A (en) * 1992-02-04 1995-07-11 Genus, Inc. Interchangeable CVD chuck surface
US5370739A (en) * 1992-06-15 1994-12-06 Materials Research Corporation Rotating susceptor semiconductor wafer processing cluster tool module useful for tungsten CVD
US5444217A (en) * 1993-01-21 1995-08-22 Moore Epitaxial Inc. Rapid thermal processing apparatus for processing semiconductor wafers

Also Published As

Publication number Publication date
JP3859226B2 (ja) 2006-12-20
US5710407A (en) 1998-01-20
DE69434773D1 (de) 2006-08-03
EP1154039B1 (de) 2006-06-21
WO1994017353A1 (en) 1994-08-04
US5444217A (en) 1995-08-22
US6151447A (en) 2000-11-21
EP1154039A1 (de) 2001-11-14
US6310327B1 (en) 2001-10-30
DE69434773T2 (de) 2007-06-28
EP0633997A1 (de) 1995-01-18
US5683518A (en) 1997-11-04
DE69429218T2 (de) 2002-08-29
EP0633997B1 (de) 2001-11-28
EP0633997A4 (de) 1997-05-21
JPH07505261A (ja) 1995-06-08
JP2007180533A (ja) 2007-07-12
JP4084412B2 (ja) 2008-04-30
JP2005045213A (ja) 2005-02-17

Similar Documents

Publication Publication Date Title
DE69429218D1 (de) Vorrichtung zur schnellen thermischen behandlung zur herstellung von halbleiterwafers
DE69735514D1 (de) Vorrichtung zur Behandlung von Halbleiterscheiben
DE69509046D1 (de) Plasmareaktoren zur Behandlung von Halbleiterscheiben
DE69431385D1 (de) Verfahren zur Herstellung von Silizium-Halbleiterplättchen
DE69535412D1 (de) Verarbeitungssystem zur Herstellung von Halbleiterbauelementen
DE69737702D1 (de) Verfahren zur Herstellung von Halbleiterscheiben
DE69623967D1 (de) Verfahren und vorrichtung zur thermischen behandlung von halbleitersubstraten
DE69120193D1 (de) Batchverfahren und Vorrichtung zur Behandlung von Halbleiterscheiben
DE69123508D1 (de) Vorrichtung zur Bearbeitung von Halbleiterscheiben
DE69130987D1 (de) Vorrichtung zur Behandlung von Halbleiter-Plättchen
DE69434536D1 (de) Verfahren zur Herstellung von halbleitenden Wafern
DE69619330D1 (de) Herstellung von Halbleiterwafern
DE69028440D1 (de) Mehrkammer-Vakuumvorrichtung mit abgestuften Vakuumniveaus zur Behandlung von Halbleiterwafern
DE3688057D1 (de) Halbleitervorrichtung und methode zur herstellung.
DE69429978D1 (de) Verfahren zur Herstellung von Halbleiteranordnungen mit Isolationszonen
DE69022269D1 (de) Verfahren zur thermischen Behandlung von Silizium.
DE69517629D1 (de) Verfahren zur selektiven Herstellung von Halbleitergebieten
DE69501172D1 (de) Einrichtung für die Behandlung von Substrat
DE69200684D1 (de) Vorrichtung zur thermischen Behandlung von laufenden Garnen.
DE69610109D1 (de) Halbleiterkomponente mit verbesserter sicherheit;halbleiterschaltkreisanordung und verfahren zur herstellung derselben
DE68917003D1 (de) Verfahren zur Herstellung von Halbleiterbauelementen, die gegen Musterverunreinigungen geschützt sind.
DE68916182D1 (de) Halbleitereinrichtung, z.B. Feldeffekttransistor, und Verfahren zur Herstellung derselben.
DE3850519D1 (de) Vorrichtung zur Herstellung von Halbleiter-Bauelementen.
DE69116033D1 (de) Reaktor zur Behandlung von Halbleiterscheiben.
DE69703600D1 (de) Verfahren zur Herstellung von Halbleiterscheiben

Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: MOORE EPITAXIAL INC., TRACY, CALIF., US

8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee