JP6836965B2 - 成膜装置 - Google Patents
成膜装置 Download PDFInfo
- Publication number
- JP6836965B2 JP6836965B2 JP2017123226A JP2017123226A JP6836965B2 JP 6836965 B2 JP6836965 B2 JP 6836965B2 JP 2017123226 A JP2017123226 A JP 2017123226A JP 2017123226 A JP2017123226 A JP 2017123226A JP 6836965 B2 JP6836965 B2 JP 6836965B2
- Authority
- JP
- Japan
- Prior art keywords
- raw material
- film forming
- thermometer
- supply port
- opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000008021 deposition Effects 0.000 title 1
- 239000002994 raw material Substances 0.000 claims description 139
- 238000005192 partition Methods 0.000 claims description 57
- 238000010926 purge Methods 0.000 claims description 45
- 230000015572 biosynthetic process Effects 0.000 claims description 21
- 239000010408 film Substances 0.000 description 148
- 239000007789 gas Substances 0.000 description 122
- 235000012431 wafers Nutrition 0.000 description 47
- 230000003287 optical effect Effects 0.000 description 21
- 230000005855 radiation Effects 0.000 description 20
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 16
- 229910010271 silicon carbide Inorganic materials 0.000 description 16
- 230000000052 comparative effect Effects 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 210000002159 anterior chamber Anatomy 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 2
- 230000001186 cumulative effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000001294 propane Substances 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000010009 beating Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
- G01J5/0007—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter of wafers or semiconductor substrates, e.g. using Rapid Thermal Processing
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/0044—Furnaces, ovens, kilns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Description
即ち、本発明は、上記課題を解決するため、以下の手段を提供する。
原料ガスが流れる領域と温度計口が存在する領域とを隔離し、温度計口に原料ガスが到達することをより抑制できる。
パージガスの流れ方向が温度計口と原料供給口とを結ぶ線と交差することで、パージガスにより原料供給口から供給された原料ガスが温度計口に至ることを遮ることができる。これにより原料ガスが温度計口に到達することを、より効果的に防ぐことができる。
温度計口から成膜空間にパージガスを供給することにより、温度計口の周囲に原料ガスが到達しても、パージガスの流れによって原料ガスを温度計口から遠ざけられる。すなわち、放射温度計の光路が遮られることをより効果的に防ぐことができる。
原料供給口に至るまで、原料ガスがパイプにより輸送されることにより、原料ガスを簡便に他の空間と分離することができ、温度計口に原料ガスが到達することを抑制できる。
なお、以下の説明で用いる図面は、本発明の特徴をわかりやすくするために便宜上特徴となる部分を拡大して示している場合があり、各構成要素の寸法比率などは実際とは異なっていることがある。また、以下の説明において例示される材質、寸法等は一例であって、本発明はそれらに限定されるものではなく、その要旨を変更しない範囲で適宜変更して実施することが可能である。
図1を参照して、第1実施形態にかかる成膜装置100の一例について説明する。
第1実施形態の成膜装置100は、炉体10と、載置台20と、原料供給用パイプ50とを備える。載置台20は、炉体10内に位置する。載置台20は、ウェハ載置面21Aにウェハ30を載置できる。成膜装置100を動作させることで、ウェハ30の表面にエピタキシャル膜を成長させる。原料供給用パイプ50を通じて、原料ガスgを成膜装置100の内部に導入する。
Si系原料ガスとしては、例えばシラン系ガスとして、シラン(SiH4)を用いることができるほか、SiH2Cl2、SiHCl3、SiCl4などのエッチング作用があるClを含む塩素系Si原料含有ガス(クロライド系原料)を用いることもできる。また、例えばシランに対してHClを添加したガスを用いてもよい。C系原料ガスとしては、例えばプロパン(C3H8)等を用いることができる。
図3は、第2実施形態にかかる成膜装置の断面模式図である。図3に示す成膜装置101は、第1実施形態にかかる成膜装置100と比較して、前室仕切り板14Bを備える点が異なる。その他の構成は、第1実施形態にかかる成膜装置100と同一であり、同一の構成については同一の符号を付す。
図4は、第3実施形態にかかる成膜装置の断面模式図である。図4に示す成膜装置102は、第1実施形態にかかる成膜装置100と比較して、パージガス供給口16を有する点が異なる。その他の構成は、第1実施形態にかかる成膜装置100と同一であり、同一の構成については同一の符号を付す。
図5は、実施例1に用いた成膜装置の要部を拡大した断面模式図である。図5に示すように、原料供給口12は温度計口13よりウェハ載置面21A(図視略)側に設けた。また炉体10内には仕切り板14Aを設け、成膜空間11と成膜処理前室15とを分離した。原料供給口12は仕切り板14Aと成膜空間11とが接する面と同一面上にあり、温度計口13は仕切り板14Aより成膜処理前室15側に設けた。さらに、温度計口13は温度計用パイプ60の一端とし、温度計用パイプ60の周囲にはパージガスを供給した。原料ガスとして、トリクロロシラン(SiHCl3)及びプロパン(C3H8)を用い、SiCウェハ上にエピタキシャル膜を成長させた。パージガスとしては、水素及びアルゴンを用いた。温度計口13と仕切り板14Aの距離は、温度計用パイプ60の外径に対して34.5%であった。
図6は、比較例1に用いた成膜装置の要部を拡大した断面模式図である。図6に示すように、比較例1は温度計口13の位置を仕切り板14Aと同一面上とした点のみが実施例1と異なる。すなわち、比較例1では、温度計口13と原料供給口12とが同一面内にあった。その他の構成は実施例1と同じとして、SiCエピタキシャル膜を成長させた。
Claims (6)
- 成膜空間に原料を供給する原料供給口と、
前記成膜空間内に配置された載置台のウェハ載置面に載置されるウェハの温度を測定するための開口部と、
前記成膜空間と成膜処理前室とを仕切る仕切り板と、を備え、
前記原料供給口は、前記仕切り板と同一面、又は前記仕切り板より前記成膜空間側に位置し、前記開口部は前記仕切り板より前記成膜処理前室側に位置し、
前記成膜処理前室は、前記成膜空間に供給されるガスを貯留させ、
前記開口部が、温度計用パイプの前記成膜空間側の一端である、
成膜装置。 - 前記開口部から前記ウェハ載置面に向かって下した垂線方向において、前記開口部と前記仕切り板の前記成膜空間側の面との距離が、前記開口部の径の20%以上である、請求項1に記載の成膜装置。
- 前記成膜処理前室は、原料ガスが供給される第1領域と、前記開口部が存在する第2領域とに分離されている、請求項1又は2に記載の成膜装置。
- 前記開口部と前記原料供給口との間に、パージガス供給口を有し、
前記パージガス供給口から前記成膜空間に供給されるパージガスの流れ方向が、前記開口部と前記原料供給口とを結ぶ線と交差している、請求項1〜3のいずれか一項に記載の成膜装置。 - 前記開口部からパージガスを前記成膜空間に供給するパージガス供給手段をさらに備える、請求項1〜4のいずれか一項に記載の成膜装置。
- 前記原料供給口は原料供給用パイプの一端であり、前記原料供給口に至るまで原料ガスは他の空間と分離されている、請求項1〜5のいずれか一項に記載の成膜装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017123226A JP6836965B2 (ja) | 2017-06-23 | 2017-06-23 | 成膜装置 |
US16/621,899 US11424147B2 (en) | 2017-06-23 | 2018-05-09 | Deposition apparatus having particular arrangement of raw material supply port, partition plate, and opening for measuring a temperature |
CN201880025453.6A CN110520966B (zh) | 2017-06-23 | 2018-05-09 | 成膜装置 |
PCT/JP2018/017937 WO2018235442A1 (ja) | 2017-06-23 | 2018-05-09 | 成膜装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017123226A JP6836965B2 (ja) | 2017-06-23 | 2017-06-23 | 成膜装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019009264A JP2019009264A (ja) | 2019-01-17 |
JP6836965B2 true JP6836965B2 (ja) | 2021-03-03 |
Family
ID=64735690
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017123226A Active JP6836965B2 (ja) | 2017-06-23 | 2017-06-23 | 成膜装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US11424147B2 (ja) |
JP (1) | JP6836965B2 (ja) |
CN (1) | CN110520966B (ja) |
WO (1) | WO2018235442A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110408910B (zh) * | 2019-08-16 | 2020-08-28 | 中国科学院上海微系统与信息技术研究所 | 高通量气相沉积设备及气相沉积方法 |
KR102391974B1 (ko) * | 2019-11-15 | 2022-04-27 | 세메스 주식회사 | 온도 측정 유닛 및 이를 포함하는 기판 처리 장치 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04364719A (ja) * | 1991-06-12 | 1992-12-17 | Hitachi Ltd | 半導体成膜装置 |
US5444217A (en) * | 1993-01-21 | 1995-08-22 | Moore Epitaxial Inc. | Rapid thermal processing apparatus for processing semiconductor wafers |
GB9411911D0 (en) * | 1994-06-14 | 1994-08-03 | Swan Thomas & Co Ltd | Improvements in or relating to chemical vapour deposition |
JPH08236450A (ja) * | 1995-03-01 | 1996-09-13 | Toshiba Corp | 半導体気相成長装置及び半導体気相成長方法 |
JP3962509B2 (ja) * | 1999-09-16 | 2007-08-22 | 株式会社東芝 | 気相成長装置 |
JP2007043022A (ja) * | 2005-08-05 | 2007-02-15 | Sharp Corp | 半導体処理装置および半導体処理方法 |
JP5010235B2 (ja) | 2006-10-26 | 2012-08-29 | 株式会社ニューフレアテクノロジー | 気相成長方法 |
JP5378779B2 (ja) * | 2008-12-10 | 2013-12-25 | Sumco Techxiv株式会社 | エピタキシャルウェーハの製造方法 |
US9758871B2 (en) | 2008-12-10 | 2017-09-12 | Sumco Techxiv Corporation | Method and apparatus for manufacturing epitaxial silicon wafer |
JP5402657B2 (ja) * | 2010-01-14 | 2014-01-29 | 株式会社Sumco | エピタキシャル成長装置 |
JP5646207B2 (ja) * | 2010-04-30 | 2014-12-24 | 株式会社ニューフレアテクノロジー | 成膜装置および成膜方法 |
JP2012015378A (ja) * | 2010-07-01 | 2012-01-19 | Sharp Corp | 測定状態判定装置 |
JP2012018985A (ja) * | 2010-07-06 | 2012-01-26 | Sharp Corp | ガス処理装置 |
US20120118225A1 (en) * | 2010-09-16 | 2012-05-17 | Applied Materials, Inc. | Epitaxial growth temperature control in led manufacture |
JP2013251479A (ja) * | 2012-06-04 | 2013-12-12 | Taiyo Nippon Sanso Corp | 気相成長装置 |
-
2017
- 2017-06-23 JP JP2017123226A patent/JP6836965B2/ja active Active
-
2018
- 2018-05-09 WO PCT/JP2018/017937 patent/WO2018235442A1/ja active Application Filing
- 2018-05-09 US US16/621,899 patent/US11424147B2/en active Active
- 2018-05-09 CN CN201880025453.6A patent/CN110520966B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
WO2018235442A1 (ja) | 2018-12-27 |
CN110520966B (zh) | 2023-08-15 |
CN110520966A (zh) | 2019-11-29 |
JP2019009264A (ja) | 2019-01-17 |
US20200118849A1 (en) | 2020-04-16 |
US11424147B2 (en) | 2022-08-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US12043899B2 (en) | Reactor system and method to reduce residue buildup during a film deposition process | |
US20180171479A1 (en) | Materials and coatings for a showerhead in a processing system | |
KR101180214B1 (ko) | 전구체 공급원을 구비한 샤우어헤드 | |
US20080092812A1 (en) | Methods and Apparatuses for Depositing Uniform Layers | |
US10262863B2 (en) | Method for manufacturing SiC epitaxial wafer by simultaneously utilizing an N-based gas and a CI-based gas, and SiC epitaxial growth apparatus | |
US11482416B2 (en) | Vapor phase growth method | |
JP6376700B2 (ja) | SiC化学気相成長装置 | |
CN111286723A (zh) | 基座和化学气相沉积装置 | |
JP6836965B2 (ja) | 成膜装置 | |
KR20060131921A (ko) | 서셉터 | |
US11390949B2 (en) | SiC chemical vapor deposition apparatus and method of manufacturing SiC epitaxial wafer | |
JP2016050164A (ja) | SiC化学気相成長装置 | |
US9711353B2 (en) | Method for manufacturing compound semiconductor epitaxial substrates including heating of carrier gas | |
US20130068320A1 (en) | Protective material for gas delivery in a processing system | |
US11326275B2 (en) | SiC epitaxial growth apparatus having purge gas supply ports which surround a vicinity of a raw material gas supply port | |
CN111349908A (zh) | SiC化学气相沉积装置 | |
JP2015198213A (ja) | エピタキシャル炭化珪素ウェハの製造方法及びそれに用いる炭化珪素単結晶基板のホルダー | |
WO2020158657A1 (ja) | 成膜装置及び成膜方法 | |
JP2021031336A (ja) | SiC化学気相成長装置 | |
JP7209569B2 (ja) | Iii族窒化物基板の製造装置及び製造方法 | |
KR102492343B1 (ko) | 성막 장치 및 성막 방법 | |
US20210040645A1 (en) | Silicon carbide single crystal manufacturing apparatus, and manufacturing method of silicon carbide single crystal | |
JP2016096178A (ja) | 成膜方法、半導体素子の製造方法、および自立基板の製造方法 | |
KR101088678B1 (ko) | 박막 형성 방법 | |
JP2016096177A (ja) | ハイドライド気相成長装置および成膜方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20181102 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200311 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20201027 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20201222 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20210112 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20210208 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6836965 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |