DE69130987D1 - Vorrichtung zur Behandlung von Halbleiter-Plättchen - Google Patents

Vorrichtung zur Behandlung von Halbleiter-Plättchen

Info

Publication number
DE69130987D1
DE69130987D1 DE69130987T DE69130987T DE69130987D1 DE 69130987 D1 DE69130987 D1 DE 69130987D1 DE 69130987 T DE69130987 T DE 69130987T DE 69130987 T DE69130987 T DE 69130987T DE 69130987 D1 DE69130987 D1 DE 69130987D1
Authority
DE
Germany
Prior art keywords
semiconductor wafers
treating semiconductor
treating
wafers
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69130987T
Other languages
English (en)
Other versions
DE69130987T2 (de
Inventor
Avi Tepman
Howard Grunes
Dana Andrews
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of DE69130987D1 publication Critical patent/DE69130987D1/de
Application granted granted Critical
Publication of DE69130987T2 publication Critical patent/DE69130987T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
DE69130987T 1990-04-20 1991-04-09 Vorrichtung zur Behandlung von Halbleiter-Plättchen Expired - Fee Related DE69130987T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US51331890A 1990-04-20 1990-04-20

Publications (2)

Publication Number Publication Date
DE69130987D1 true DE69130987D1 (de) 1999-04-15
DE69130987T2 DE69130987T2 (de) 1999-09-30

Family

ID=24042751

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69118228T Expired - Fee Related DE69118228T2 (de) 1990-04-20 1991-04-09 Klemmechanismus für physikalische Dampfniederschlagvorrichtung
DE69130987T Expired - Fee Related DE69130987T2 (de) 1990-04-20 1991-04-09 Vorrichtung zur Behandlung von Halbleiter-Plättchen

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69118228T Expired - Fee Related DE69118228T2 (de) 1990-04-20 1991-04-09 Klemmechanismus für physikalische Dampfniederschlagvorrichtung

Country Status (5)

Country Link
EP (3) EP0452779B1 (de)
JP (1) JP2662106B2 (de)
KR (1) KR100240195B1 (de)
DE (2) DE69118228T2 (de)
ES (1) ES2086429T3 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4201211C2 (de) * 1992-01-18 2001-04-26 Leybold Ag Beschichtungsanlage
EP0595307A3 (en) * 1992-10-27 1994-06-15 Applied Materials Inc Clamp ring and processing chamber comprising said clamp ring
KR960006956B1 (ko) * 1993-02-06 1996-05-25 현대전자산업주식회사 이시알(ecr) 장비
US5511799A (en) * 1993-06-07 1996-04-30 Applied Materials, Inc. Sealing device useful in semiconductor processing apparatus for bridging materials having a thermal expansion differential
US5509464A (en) * 1993-07-30 1996-04-23 Applied Materials, Inc. Method and apparatus for cooling rectangular substrates
US5513594A (en) * 1993-10-20 1996-05-07 Mcclanahan; Adolphus E. Clamp with wafer release for semiconductor wafer processing equipment
KR950025850A (ko) * 1994-02-17 1995-09-18 서성기 박막의 열처리 장치
US5791895A (en) * 1994-02-17 1998-08-11 Novellus Systems, Inc. Apparatus for thermal treatment of thin film wafer
US5522937A (en) * 1994-05-03 1996-06-04 Applied Materials, Inc. Welded susceptor assembly
US5595241A (en) * 1994-10-07 1997-01-21 Sony Corporation Wafer heating chuck with dual zone backplane heating and segmented clamping member
AU6962196A (en) 1995-09-01 1997-03-27 Advanced Semiconductor Materials America, Inc. Wafer support system
US6113702A (en) * 1995-09-01 2000-09-05 Asm America, Inc. Wafer support system
GB2311651A (en) * 1996-03-27 1997-10-01 Surface Tech Sys Ltd Clamping device
US6014082A (en) * 1997-10-03 2000-01-11 Sony Corporation Temperature monitoring and calibration system for control of a heated CVD chuck
EP1042787B1 (de) * 1997-12-23 2005-03-02 Unaxis Balzers Aktiengesellschaft Haltevorrichtung
FR2792084A1 (fr) * 1999-04-12 2000-10-13 Joint Industrial Processors For Electronics Dispositif de chauffage et de refroidissement integre dans un reacteur de traitement thermique d'un substrat
US6176931B1 (en) 1999-10-29 2001-01-23 International Business Machines Corporation Wafer clamp ring for use in an ionized physical vapor deposition apparatus
JP2001135712A (ja) * 1999-11-05 2001-05-18 Nec Corp 真空処理装置
CN100358098C (zh) * 2005-08-05 2007-12-26 中微半导体设备(上海)有限公司 半导体工艺件处理装置
US8092606B2 (en) 2007-12-18 2012-01-10 Asm Genitech Korea Ltd. Deposition apparatus
US8937800B2 (en) * 2012-04-24 2015-01-20 Applied Materials, Inc. Electrostatic chuck with advanced RF and temperature uniformity
KR102578750B1 (ko) * 2018-12-27 2023-09-13 캐논 톡키 가부시키가이샤 얼라인먼트 시스템, 성막 장치, 성막 방법, 및 전자 디바이스 제조방법
CN114086124A (zh) * 2021-11-29 2022-02-25 重庆忽米网络科技有限公司 一种晶圆pvd沉淀加工方法及系统
CN115466933A (zh) * 2022-08-30 2022-12-13 厦门金鹭特种合金有限公司 一种工装基座、工装及其应用

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4261762A (en) 1979-09-14 1981-04-14 Eaton Corporation Method for conducting heat to or from an article being treated under vacuum
US4743570A (en) 1979-12-21 1988-05-10 Varian Associates, Inc. Method of thermal treatment of a wafer in an evacuated environment
US4512391A (en) 1982-01-29 1985-04-23 Varian Associates, Inc. Apparatus for thermal treatment of semiconductor wafers by gas conduction incorporating peripheral gas inlet
US4457359A (en) 1982-05-25 1984-07-03 Varian Associates, Inc. Apparatus for gas-assisted, solid-to-solid thermal transfer with a semiconductor wafer
US4542298A (en) 1983-06-09 1985-09-17 Varian Associates, Inc. Methods and apparatus for gas-assisted thermal transfer with a semiconductor wafer
US4671204A (en) 1986-05-16 1987-06-09 Varian Associates, Inc. Low compliance seal for gas-enhanced wafer cooling in vacuum
KR0129663B1 (ko) * 1988-01-20 1998-04-06 고다까 토시오 에칭 장치 및 방법
DE58905888D1 (de) * 1988-07-15 1993-11-18 Balzers Hochvakuum Haltevorrichtung für eine Scheibe sowie Anwendung derselben.
JPH0291933A (ja) * 1988-09-29 1990-03-30 Nec Corp イオン注入装置

Also Published As

Publication number Publication date
EP0688042A1 (de) 1995-12-20
EP0688042B1 (de) 1999-03-10
KR910019120A (ko) 1991-11-30
ES2086429T3 (es) 1996-07-01
EP0452779B1 (de) 1996-03-27
DE69130987T2 (de) 1999-09-30
EP0452779A2 (de) 1991-10-23
JPH04226051A (ja) 1992-08-14
EP0452779A3 (en) 1992-09-02
EP0688043A1 (de) 1995-12-20
DE69118228D1 (de) 1996-05-02
KR100240195B1 (ko) 2000-01-15
DE69118228T2 (de) 1996-11-21
JP2662106B2 (ja) 1997-10-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee