DE69428986D1 - Verfahren zur Behandlung von Halbleiterscheiben mit Flüssigkeiten - Google Patents

Verfahren zur Behandlung von Halbleiterscheiben mit Flüssigkeiten

Info

Publication number
DE69428986D1
DE69428986D1 DE69428986T DE69428986T DE69428986D1 DE 69428986 D1 DE69428986 D1 DE 69428986D1 DE 69428986 T DE69428986 T DE 69428986T DE 69428986 T DE69428986 T DE 69428986T DE 69428986 D1 DE69428986 D1 DE 69428986D1
Authority
DE
Germany
Prior art keywords
liquids
semiconductor wafers
treating semiconductor
treating
wafers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69428986T
Other languages
English (en)
Inventor
Sebastiano Sorbello
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE69428986D1 publication Critical patent/DE69428986D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • ing And Chemical Polishing (AREA)
DE69428986T 1994-07-29 1994-07-29 Verfahren zur Behandlung von Halbleiterscheiben mit Flüssigkeiten Expired - Lifetime DE69428986D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP94830389A EP0694957B1 (de) 1994-07-29 1994-07-29 Verfahren zur Behandlung von Halbleiterscheiben mit Flüssigkeiten

Publications (1)

Publication Number Publication Date
DE69428986D1 true DE69428986D1 (de) 2001-12-13

Family

ID=8218499

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69428986T Expired - Lifetime DE69428986D1 (de) 1994-07-29 1994-07-29 Verfahren zur Behandlung von Halbleiterscheiben mit Flüssigkeiten

Country Status (2)

Country Link
EP (1) EP0694957B1 (de)
DE (1) DE69428986D1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5593505A (en) * 1995-04-19 1997-01-14 Memc Electronic Materials, Inc. Method for cleaning semiconductor wafers with sonic energy and passing through a gas-liquid-interface
SG63810A1 (en) * 1997-02-21 1999-03-30 Canon Kk Wafer processing apparatus wafer processing method and semiconductor substrate fabrication method
US6767840B1 (en) 1997-02-21 2004-07-27 Canon Kabushiki Kaisha Wafer processing apparatus, wafer processing method, and semiconductor substrate fabrication method
KR19990016634A (ko) * 1997-08-18 1999-03-15 윤종용 반도체 케미컬 배스 시스템
US5839460A (en) * 1997-11-13 1998-11-24 Memc Electronic Materials, Inc. Apparatus for cleaning semiconductor wafers
KR20040000754A (ko) * 2002-06-25 2004-01-07 동부전자 주식회사 반도체 웨이퍼 세정장치
JP2004207503A (ja) * 2002-12-25 2004-07-22 Canon Inc 処理装置
CN107946229B (zh) * 2017-11-21 2021-01-26 长江存储科技有限责任公司 用于晶圆刻蚀的升降装置
CN107968060B (zh) * 2017-11-21 2020-05-12 长江存储科技有限责任公司 用于晶圆刻蚀的反应槽

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2512588A1 (de) * 1974-03-22 1975-09-25 Terumo Corp Schlauchklemme
IT1229640B (it) * 1987-06-29 1991-09-04 S G S Microelettronica S P A O Processo di conformazione del bordo di fette di materiale semiconduttore e relativa apparecchiatura
JPH0785471B2 (ja) * 1990-10-16 1995-09-13 信越半導体株式会社 エッチング装置
US5279316A (en) * 1992-08-18 1994-01-18 P.C.T. Systems, Inc. Multiprocessing sonic bath system for semiconductor wafers

Also Published As

Publication number Publication date
EP0694957B1 (de) 2001-11-07
EP0694957A1 (de) 1996-01-31

Similar Documents

Publication Publication Date Title
DE69636426D1 (de) Verfahren zur Reinigung von halbleitenden Wafern
DE69024077D1 (de) Einrichtung und Verfahren zur Behandlung von Halbleiterscheiben
DE69735514D1 (de) Vorrichtung zur Behandlung von Halbleiterscheiben
DE69511067D1 (de) Verfahren zur behandlung von kontaktlinsen mit superkritischen fluidum
DE69737702D1 (de) Verfahren zur Herstellung von Halbleiterscheiben
DE69507567D1 (de) Verfahren zur Reinigung von halbleitenden Scheiben
DE69325325D1 (de) Verfahren zur Herstellung von Halbleiterscheiben
DE69730097D1 (de) Verfahren und Vorrichtung zur Behandlung von Wafers
DE69434773D1 (de) Vorrichtung zur schnellen thermischen Behandlung zur Herstellung von Halbleiterwafern
DE69524744D1 (de) Method zur behandlung von kreislaufwassersysteme
DE69120193D1 (de) Batchverfahren und Vorrichtung zur Behandlung von Halbleiterscheiben
DE69623967D1 (de) Verfahren und vorrichtung zur thermischen behandlung von halbleitersubstraten
DE69205255D1 (de) Verfahren zum Aufspannen und Fixieren von Halbleiter-Plättchen.
DE59400669D1 (de) Verfahren zur nasschemischen Behandlung von Werkstücken
DE69331469D1 (de) Verfahren zur behandlung von abfällen
DE69130987D1 (de) Vorrichtung zur Behandlung von Halbleiter-Plättchen
DE69509561D1 (de) Verfahren und Vorrichtung zum Abfasen von Halbleiterscheiben
DE59506147D1 (de) Verfahren zum Reinigen von Halbleiterscheiben
DE69421196D1 (de) Vorrichtung zur behandlung von überbiss
DE69517629D1 (de) Verfahren zur selektiven Herstellung von Halbleitergebieten
DE58908255D1 (de) Verfahren zur nasschemischen Oberflächenbehandlung von Halbleiterscheiben.
DE69022269D1 (de) Verfahren zur thermischen Behandlung von Silizium.
DE69525566D1 (de) Verfahren zum gitterangepassten Aufwachsen von Halbleiterschichten
DE69303527D1 (de) Verfahren zur Behandlung von kleinen Löchern in Substratmaterial
DE69428986D1 (de) Verfahren zur Behandlung von Halbleiterscheiben mit Flüssigkeiten

Legal Events

Date Code Title Description
8332 No legal effect for de