DE69636426D1 - Verfahren zur Reinigung von halbleitenden Wafern - Google Patents

Verfahren zur Reinigung von halbleitenden Wafern

Info

Publication number
DE69636426D1
DE69636426D1 DE69636426T DE69636426T DE69636426D1 DE 69636426 D1 DE69636426 D1 DE 69636426D1 DE 69636426 T DE69636426 T DE 69636426T DE 69636426 T DE69636426 T DE 69636426T DE 69636426 D1 DE69636426 D1 DE 69636426D1
Authority
DE
Germany
Prior art keywords
cleaning
semiconducting wafers
semiconducting
wafers
cleaning semiconducting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69636426T
Other languages
English (en)
Other versions
DE69636426T2 (de
Inventor
Shigeyoshi Netsu
Shouichi Miura
Yasuyuki Harada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pre Tech Co Ltd
Original Assignee
Pre Tech Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pre Tech Co Ltd filed Critical Pre Tech Co Ltd
Publication of DE69636426D1 publication Critical patent/DE69636426D1/de
Application granted granted Critical
Publication of DE69636426T2 publication Critical patent/DE69636426T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02043Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052Wet cleaning only
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04Cleaning involving contact with liquid
    • B08B3/10Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • CCHEMISTRY; METALLURGY
    • C02TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02FTREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00Treatment of water, waste water, or sewage
    • C02F1/46Treatment of water, waste water, or sewage by electrochemical methods
    • C02F1/461Treatment of water, waste water, or sewage by electrochemical methods by electrolysis
    • C02F1/46104Devices therefor; Their operating or servicing
    • C02F1/4618Devices therefor; Their operating or servicing for producing "ionised" acidic or basic water
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • CCHEMISTRY; METALLURGY
    • C02TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02FTREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00Treatment of water, waste water, or sewage
    • C02F1/34Treatment of water, waste water, or sewage with mechanical oscillations
    • C02F1/36Treatment of water, waste water, or sewage with mechanical oscillations ultrasonic vibrations
    • CCHEMISTRY; METALLURGY
    • C02TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02FTREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00Treatment of water, waste water, or sewage
    • C02F1/46Treatment of water, waste water, or sewage by electrochemical methods
    • C02F1/461Treatment of water, waste water, or sewage by electrochemical methods by electrolysis
    • C02F1/46104Devices therefor; Their operating or servicing
    • C02F1/4618Devices therefor; Their operating or servicing for producing "ionised" acidic or basic water
    • C02F2001/46185Devices therefor; Their operating or servicing for producing "ionised" acidic or basic water only anodic or acidic water, e.g. for oxidizing or sterilizing
    • CCHEMISTRY; METALLURGY
    • C02TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02FTREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F2201/00Apparatus for treatment of water, waste water or sewage
    • C02F2201/46Apparatus for electrochemical processes
    • C02F2201/461Electrolysis apparatus
    • C02F2201/46105Details relating to the electrolytic devices
    • C02F2201/4611Fluid flow
    • CCHEMISTRY; METALLURGY
    • C02TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02FTREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F2201/00Apparatus for treatment of water, waste water or sewage
    • C02F2201/46Apparatus for electrochemical processes
    • C02F2201/461Electrolysis apparatus
    • C02F2201/46105Details relating to the electrolytic devices
    • C02F2201/46115Electrolytic cell with membranes or diaphragms
    • CCHEMISTRY; METALLURGY
    • C02TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02FTREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F2201/00Apparatus for treatment of water, waste water or sewage
    • C02F2201/46Apparatus for electrochemical processes
    • C02F2201/461Electrolysis apparatus
    • C02F2201/46105Details relating to the electrolytic devices
    • C02F2201/46195Cells containing solid electrolyte
DE69636426T 1995-05-31 1996-05-28 Verfahren zur Reinigung von halbleitenden Wafern Expired - Lifetime DE69636426T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP13357095 1995-05-31
JP13357095 1995-05-31
JP29525695 1995-11-14
JP7295256A JP2832173B2 (ja) 1995-05-31 1995-11-14 半導体基板の洗浄装置および洗浄方法

Publications (2)

Publication Number Publication Date
DE69636426D1 true DE69636426D1 (de) 2006-09-21
DE69636426T2 DE69636426T2 (de) 2007-05-03

Family

ID=26467894

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69636426T Expired - Lifetime DE69636426T2 (de) 1995-05-31 1996-05-28 Verfahren zur Reinigung von halbleitenden Wafern

Country Status (7)

Country Link
US (1) US5733434A (de)
EP (1) EP0750334B1 (de)
JP (1) JP2832173B2 (de)
KR (1) KR100441803B1 (de)
DE (1) DE69636426T2 (de)
MY (1) MY120500A (de)
TW (1) TW305053B (de)

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10303171A (ja) * 1997-04-28 1998-11-13 Mitsubishi Electric Corp 半導体ウェーハのウエット処理方法及びウエット処理装置
JP2002505037A (ja) * 1997-06-13 2002-02-12 シーエフエムテイ・インコーポレーテツド 半導体ウェーハ処理方法
JP3116871B2 (ja) * 1997-09-03 2000-12-11 日本電気株式会社 半導体基板表面分析の前処理方法及びその装置
CN1107970C (zh) * 1997-12-10 2003-05-07 Cfmt公司 电子元件制造用的湿法处理方法
US5932022A (en) * 1998-04-21 1999-08-03 Harris Corporation SC-2 based pre-thermal treatment wafer cleaning process
US7410814B1 (en) * 1999-01-23 2008-08-12 Loxley Ted A Process and apparatus for cleaning silicon wafers
US6261845B1 (en) 1999-02-25 2001-07-17 Cfmt, Inc. Methods and systems for determining chemical concentrations and controlling the processing of semiconductor substrates
DE10002733A1 (de) * 2000-01-22 2001-07-26 Bwt Privatstiftung Hintersee Elektrolysezelle und Elektrolyseverfahren
KR100389917B1 (ko) * 2000-09-06 2003-07-04 삼성전자주식회사 산화성 물질을 포함하는 아노드 수 및/또는 환원성 물질을포함하는 캐소드 수를 사용하는 반도체 제조를 위한 습식공정 및 이 공정에 사용되는 아노드수 및/또는 캐소드수
JP4752117B2 (ja) * 2001-02-08 2011-08-17 日本テキサス・インスツルメンツ株式会社 半導体ウェハ上の粒子を除去する方法
TW552836B (en) * 2001-07-13 2003-09-11 Jipukomu Kabushiki Kaisha Method for treating surface of copper articles
TW592859B (en) * 2001-09-11 2004-06-21 Ebara Corp Electrolytic processing apparatus and method
TWI224531B (en) 2001-09-11 2004-12-01 Ebara Corp Substrate processing apparatus and method
JP4310085B2 (ja) * 2002-07-31 2009-08-05 株式会社荏原製作所 電解加工方法及び装置
JP2004002910A (ja) * 2002-05-30 2004-01-08 Ebara Corp 電解加工方法及び装置
US7108784B1 (en) * 2001-09-26 2006-09-19 Wrt International Llc Apparatus for removal and destruction of ammonia from an aqueous medium
US7476311B2 (en) * 2001-09-26 2009-01-13 Wrt International Llc Arsenic removal from aqueous media using chemically treated zeolite materials
US9908788B1 (en) 2001-09-26 2018-03-06 Wrt International Llc Radium removal from aqueous media using zeolite materials
US6846380B2 (en) 2002-06-13 2005-01-25 The Boc Group, Inc. Substrate processing apparatus and related systems and methods
US7105087B2 (en) * 2002-09-17 2006-09-12 Wrt International Llc Hexa-valent chromium removal from aqueous media using ferrous-form zeolite materials
US7390414B2 (en) * 2002-09-25 2008-06-24 Wrt International Llc Regeneration of chemically treated zeolite
US7326347B2 (en) * 2003-10-29 2008-02-05 Wrt International Llc Dynamic up-flow zeolite system and method
US6998054B2 (en) * 2003-12-31 2006-02-14 The Boc Group, Inc. Selective fluoride and ammonia removal by chromatographic separation of wastewater
US7527723B2 (en) 2004-01-16 2009-05-05 Ebara Corporation Electrolytic processing apparatus and electrolytic processing method
US20070215552A1 (en) * 2005-09-16 2007-09-20 Wrt International Llc. Systems and methods for removal of contaminates from an aqueous media in the absence of modified nitrate levels
US7520987B1 (en) 2005-11-15 2009-04-21 Wrt International Llc System and apparatus for purging absorptive materials used in the removal of contaminates from an aqueous medium
US8156608B2 (en) * 2006-02-10 2012-04-17 Tennant Company Cleaning apparatus having a functional generator for producing electrochemically activated cleaning liquid
US8007654B2 (en) * 2006-02-10 2011-08-30 Tennant Company Electrochemically activated anolyte and catholyte liquid
US8016996B2 (en) * 2006-02-10 2011-09-13 Tennant Company Method of producing a sparged cleaning liquid onboard a mobile surface cleaner
US8012340B2 (en) * 2006-02-10 2011-09-06 Tennant Company Method for generating electrochemically activated cleaning liquid
US8025786B2 (en) * 2006-02-10 2011-09-27 Tennant Company Method of generating sparged, electrochemically activated liquid
US8046867B2 (en) 2006-02-10 2011-11-01 Tennant Company Mobile surface cleaner having a sparging device
US7891046B2 (en) * 2006-02-10 2011-02-22 Tennant Company Apparatus for generating sparged, electrochemically activated liquid
US8025787B2 (en) * 2006-02-10 2011-09-27 Tennant Company Method and apparatus for generating, applying and neutralizing an electrochemically activated liquid
US8663479B2 (en) * 2006-11-20 2014-03-04 Wrt International Llc Method for removing cationic contaminants from water using natural zeolite underloaded with transition metal ions to limit leakage of intrinsic arsenic therefrom
BRPI0813674A2 (pt) * 2007-06-18 2015-01-06 Tennant Co Sistema de produção, e, processo para produzir um produto de álcool.
EP2207631A2 (de) * 2007-10-04 2010-07-21 Tennant Company Verfahren und vorrichtung zur neutralisation von elektrochemisch aktivierten flüssigkeiten
US8485140B2 (en) * 2008-06-05 2013-07-16 Global Patent Investment Group, LLC Fuel combustion method and system
EP2291246A2 (de) * 2008-06-10 2011-03-09 Tennant Company Elektrolysierte flüssigkeit verwendender dampfreiniger und verfahren dafür
US20090311137A1 (en) * 2008-06-11 2009-12-17 Tennant Company Atomizer using electrolyzed liquid and method therefor
JP5670889B2 (ja) * 2008-06-19 2015-02-18 テナント カンパニー 同心電極を含む管状電解セルおよび対応する方法
MX2010014391A (es) * 2008-06-19 2011-03-29 Tennant Co Metodo para eliminar la formación de sarro mediante electrólisis con generación constante.
US20100089419A1 (en) * 2008-09-02 2010-04-15 Tennant Company Electrochemically-activated liquid for cosmetic removal
JP2009035481A (ja) * 2008-09-24 2009-02-19 Shin Etsu Handotai Co Ltd シリコン単結晶ウエーハ
CN102256629A (zh) * 2008-12-17 2011-11-23 坦南特公司 用于通过液体施加电荷以增强悬浮性能的方法和设备
FR2945662B1 (fr) * 2009-05-18 2012-02-17 Inst Polytechnique Grenoble Procede de gravure d'un materiau en presence d'un gaz.
WO2011026075A1 (en) * 2009-08-31 2011-03-03 Tennant Company Electrochemically-activated liquids containing fragrant compounds
US20110219555A1 (en) * 2010-03-10 2011-09-15 Tennant Company Cleaning head and mobile floor cleaner
DE102010041639A1 (de) * 2010-09-29 2012-03-29 Wacker Chemie Ag Verfahren zur Reinigung von Polysilicium-Bruchstücken
KR101188071B1 (ko) 2011-02-23 2012-10-08 주식회사 엘지실트론 세정 장치
WO2012159710A2 (en) * 2011-05-21 2012-11-29 Meyer Burger Technology Ag Methods for the surface treatment of metal, metalloid and semiconductor solids
US9890464B2 (en) * 2012-01-12 2018-02-13 Oceanit Laboratories, Inc. Solid electrolyte/electrode assembly for electrochemical surface finishing applications
CN104843912B (zh) * 2015-05-11 2020-03-13 艾欧史密斯(南京)水处理产品有限公司 过滤装置及其清洗方法
US11466355B1 (en) 2016-07-20 2022-10-11 Oceanit Laboratories, Inc. Submerged underwater electroless, electrochemical deposition of metal on conductive and nonconductive surfaces
CN108579439A (zh) * 2018-06-27 2018-09-28 浙江工业大学膜分离与水处理协同创新中心湖州研究院 一种通用型高效抗污堵电场膜过滤器

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0605882B1 (de) * 1993-01-08 1996-12-11 Nec Corporation Verfahren und Vorrichtung zur Nassbehandlung von festen Oberflächen
JP2830733B2 (ja) * 1994-03-25 1998-12-02 日本電気株式会社 電解水生成方法および電解水生成機構
JP2832171B2 (ja) * 1995-04-28 1998-12-02 信越半導体株式会社 半導体基板の洗浄装置および洗浄方法

Also Published As

Publication number Publication date
EP0750334A3 (de) 1998-03-11
MY120500A (en) 2005-11-30
US5733434A (en) 1998-03-31
JPH0950977A (ja) 1997-02-18
TW305053B (de) 1997-05-11
KR100441803B1 (ko) 2004-10-22
EP0750334B1 (de) 2006-08-09
JP2832173B2 (ja) 1998-12-02
DE69636426T2 (de) 2007-05-03
EP0750334A2 (de) 1996-12-27

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Legal Events

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