KR910019120A - 물리 기상 증착의 클램프장치 및 가열기/냉각기 - Google Patents

물리 기상 증착의 클램프장치 및 가열기/냉각기 Download PDF

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KR910019120A
KR910019120A KR1019910006264A KR910006264A KR910019120A KR 910019120 A KR910019120 A KR 910019120A KR 1019910006264 A KR1019910006264 A KR 1019910006264A KR 910006264 A KR910006264 A KR 910006264A KR 910019120 A KR910019120 A KR 910019120A
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wafer
platen
clamping ring
top surface
ring
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테프만 아비
그루네스 호워드
앤드류 다나
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제임스 조셉 드롱
어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile

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  • Engineering & Computer Science (AREA)
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  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
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  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

내용 없음

Description

물리 기상 증착의 클램프장치 및 가열기/냉각기
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 웨이퍼의 온도를 조절하는 가열부 및 냉각부를 갖는 웨이퍼 지지대의 측단면도, 제2A도는 웨이퍼 플라텐의 평면도, 제2B도는 웨이퍼 측단면도, 제2C도는 웨이퍼 플라텐의 립의 분리도.

Claims (19)

  1. 웨이퍼 공정장치에 있어서, 플라텐(10), 과 중량W을 갖는 클램프링을 포함하며; 상기 클램프링이 클램프링의 중량에 의해서만 생성되는 힘으로 웨이퍼를 플라텐 쪽으로 누름으로써 웨이퍼와 플라텐 사이의 힘이 심하게 변할 수 있는 스프링과 같은 힘에 영향을 받지않고 오직 웨이퍼의 중량에 의해서만 결정되는 것을 특징으로 하는 장치.
  2. 제1항에 있어서, 상기 플라텐의 상부면(121)상에 웨이퍼를 위치시키고, 상기 웨이퍼 상에 상기 클램프링을 위치시키기 위한 수단을 포함하는 것을 특징으로 하는 장치.
  3. 제2항에 있어서, 상기 웨이퍼와 클램프링을 위치시키는 수단이 웨이퍼로 플라텐을 들어 올리는 범위에 걸쳐서 상기의 플라텐을 수직 이동시켜 웨이퍼 위의 클램프링을 지탱하여 클램프링과 충분한 접촉을 이루도록 하는 수단을 포함함을 특징으로 하는 장치.
  4. 제3항에 있어서, 플라텐과 클램프링 사이의 웨이퍼를 지지하는 웨이퍼 리프트장치(30)를 포함함을 특징으로 하는 장치.
  5. 제4항에 있어서, 상기 웨이퍼 지지장치가 웨이퍼를 지지하는 표면을 각각 가지는 웨이퍼 지지핑거(133)의 집합체로 이루어짐을 특징으로 하는 장치.
  6. 제5항에 있어서, 상기 웨이퍼 지지핑거는 각각 한개 이상의 경사 측벽(33)을 가지며, 상기 클램프는 클램프링을 웨이퍼 지지장치(30)와 정합시키는 웨이퍼 지지핑거의 경사측벽(33)과 접촉하도록 하는 한개 이상의 경사측벽(44)을 가지는 것을 특징으로 하는 장치.
  7. 제6항에 있어서, 상기의 클램프링이 한개 이상의 홈(45)을 형성하는 형상을 가져서 웨이퍼 지지핑거의 단부가 지지장치와 클램프링의 안정된 정합을 이루도록 할수 있음을 특징으로 하는 장치.
  8. 제1항에 있어서, 상기 클램프링이 웨이퍼를 접촉하지 않고 웨이퍼 증착 처리단계시 클램프링과 웨이퍼 사이 가장자리 한부분 이상을 증착으로부터 차폐시키는 지붕(41)을 포함함을 특징으로 하는 장치.
  9. 제8항에 있어서, 클램프링은 그것이 웨이퍼를 누르며 상기의 지붕에 의해 증착으로부터 보호되지 않을때 웨이퍼와 접촉하는 한개 이상의 접촉영역(136)을 가지는 것을 특징으로 하는 장치.
  10. 제9항에 있어서, 상기의 접촉영역이 0.3내지 1.9cm사이의 폭을 가지는 것을 특징으로 하는 장치.
  11. 제8항에 있어서, 상기 지붕이 상기 한개 이상의 접촉영역과 서로 측면인 평면에서 최소한 0.038cm 간격을 가짐을 특징으로 하는 장치.
  12. 제1항에 있어서, 상기 클램프링이 바깥쪽으로 향하여 경사진 내부표면(48)을 가지고 설계된 웨이퍼 크기보다 약간 큰 반경을 가져서 웨이퍼를 클램프링과 정합시키고 측면증착이 이 정합링(47)을 지나도록 해주는 정합링(47)을 포함함을 특징으로 하는 장치.
  13. 제1항에 있어서, 열적으로 웨이퍼 플라텐에 연결된 한개 이상의 가열부품(11,12)을 포함함을 특징으로 하는 장치.
  14. 제13항에 있어서, 열적으로 웨이퍼 플라텐에 연결된 냉각부품(13)을 포함함을 특징으로 하는 장치.
  15. 제14항에 있어서, 상기 플라텐 상부면의 바깥쪽 가장자리 근처의 상부면에 위치한 원통형 홈(21)에 방사상으로 뻗어나가는 상기 플라텐의 상부면에 위치한 한개 이상의 방사홈에 연결된 기체입구를 포함함을 특징으로 하는 장치.
  16. 제15항에 있어서, 상기 플라텐이 웨이퍼가 상부에 올려지고 상기 클램프링이 상기 플라텐에 웨이퍼를 누를때, 기체 틈이 이 가장자리와 웨이퍼 사이에 생성되어 웨이퍼와 플라텐의 상부면 사이에 형성한 기체의 압력이 증가할 수 있도록 상기 원통형 홈 보다 약간 위로 올라간 가장자리(23)를 갖는 원통형 홈의 바깥쪽 가장자리 근처에 위치한 립(22)을 더 구비함을 특징으로 하는 장치.
  17. 제16항에 있어서, 플라텐의 상부면(121)이 약간 반구형을 이루고 기체의 압력이 웨이퍼와 플라텐 사이에 형성되어 플라텐의 상부면으로부터 떨어진 웨이퍼를 충분히 휘어지도록 함을 특징으로 하는 장치.
  18. 제17항에 있어서, 웨이퍼와 플라텐 사이의 기체압력이 웨이퍼를 휘어지게 하여 웨이퍼와 반구형의 플라텐윗면 사이에 확고하게 일정한 간격을 형성하도록 함을 특징으로 하는 장치.
  19. 제17항에 있어서, 기체의 압력이 0.5~5 Torr 범위 내에 있음을 특징으로 하는 장치, 0.038cm 간격을 가짐을 특징으로 하는 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910006264A 1990-04-20 1991-04-19 물리 기상 증착의 클램프장치 및 가열기/냉각기 KR100240195B1 (ko)

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US51331890A 1990-04-20 1990-04-20
US07/513,318 1990-04-20
US7/513,318 1990-04-20

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ES (1) ES2086429T3 (ko)

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KR0129663B1 (ko) * 1988-01-20 1998-04-06 고다까 토시오 에칭 장치 및 방법
ES2043970T3 (es) * 1988-07-15 1994-01-01 Balzers Hochvakuum Dispositivo de fijacion para un disco, asi como su aplicacion.
JPH0291933A (ja) * 1988-09-29 1990-03-30 Nec Corp イオン注入装置

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DE69130987T2 (de) 1999-09-30
EP0452779B1 (en) 1996-03-27
EP0688043A1 (en) 1995-12-20
DE69118228T2 (de) 1996-11-21
EP0688042A1 (en) 1995-12-20
EP0452779A2 (en) 1991-10-23
DE69118228D1 (de) 1996-05-02
JP2662106B2 (ja) 1997-10-08
JPH04226051A (ja) 1992-08-14
EP0688042B1 (en) 1999-03-10
EP0452779A3 (en) 1992-09-02
DE69130987D1 (de) 1999-04-15
KR100240195B1 (ko) 2000-01-15
ES2086429T3 (es) 1996-07-01

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