DE69201314D1 - Vorrichtung zur Bearbeitung von Halbleitersubstraten. - Google Patents

Vorrichtung zur Bearbeitung von Halbleitersubstraten.

Info

Publication number
DE69201314D1
DE69201314D1 DE69201314T DE69201314T DE69201314D1 DE 69201314 D1 DE69201314 D1 DE 69201314D1 DE 69201314 T DE69201314 T DE 69201314T DE 69201314 T DE69201314 T DE 69201314T DE 69201314 D1 DE69201314 D1 DE 69201314D1
Authority
DE
Germany
Prior art keywords
semiconductor substrates
processing semiconductor
processing
substrates
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69201314T
Other languages
English (en)
Other versions
DE69201314T2 (de
Inventor
Toshio Ohtaki
Hitoshi Ikeda
Masato Yamada
Takao Takenaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE69201314D1 publication Critical patent/DE69201314D1/de
Publication of DE69201314T2 publication Critical patent/DE69201314T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/061—Tipping system, e.g. by rotation

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Muffle Furnaces And Rotary Kilns (AREA)
DE69201314T 1991-03-28 1992-03-24 Vorrichtung zur Bearbeitung von Halbleitersubstraten. Expired - Fee Related DE69201314T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3089842A JPH04299828A (ja) 1991-03-28 1991-03-28 半導体基板処理装置

Publications (2)

Publication Number Publication Date
DE69201314D1 true DE69201314D1 (de) 1995-03-16
DE69201314T2 DE69201314T2 (de) 1995-06-08

Family

ID=13982016

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69201314T Expired - Fee Related DE69201314T2 (de) 1991-03-28 1992-03-24 Vorrichtung zur Bearbeitung von Halbleitersubstraten.

Country Status (4)

Country Link
US (1) US5254172A (de)
EP (1) EP0505994B1 (de)
JP (1) JPH04299828A (de)
DE (1) DE69201314T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5605454A (en) * 1995-10-12 1997-02-25 Vlsi Technology, Inc. Four port tube to extend the life of quartz tubes used for the well drive process
US5584934A (en) * 1995-10-13 1996-12-17 United Microelectronics Corp. Method and apparatus for preventing distortion of horizontal quartz tube caused by high temperature
US6554905B1 (en) * 2000-04-17 2003-04-29 Asm America, Inc. Rotating semiconductor processing apparatus
CN101311335B (zh) * 2008-04-22 2011-04-06 上海卡姆丹克太阳能科技有限公司 一种直拉晶体生长炉热系统的拆装装置
JP4849092B2 (ja) * 2008-04-24 2011-12-28 豊田合成株式会社 Ｉｉｉ族窒化物半導体製造装置および種結晶ホルダ
KR101792562B1 (ko) * 2009-11-25 2017-11-02 다이나텍 엔지니어링 에이에스 실리콘의 제조를 위한 반응기 및 방법
TW201136837A (en) * 2010-01-29 2011-11-01 Basf Se Producing oxidic compounds
NO334776B1 (no) 2011-09-26 2014-05-26 Dynatec Engineering As Reaktor og fremgangsmåte for fremstilling av silisium ved kjemisk dampavsetning
CN112281139B (zh) * 2020-10-30 2021-07-16 东北石油大学 一种化学气相沉积管式炉实验装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH505648A (fr) * 1968-11-04 1971-04-15 Hewlett Packard Co Appareil pour la fabrication d'une matière semi-conductrice
CH541353A (de) * 1972-11-20 1973-09-15 Ibm Vorrichtung zum epitaktischen Abscheiden von Halbleitermaterial durch Flüssigphasenepitaxie aus mindestens zwei Lösungen
JPS5031450A (de) * 1973-07-20 1975-03-27
US3836324A (en) * 1973-08-06 1974-09-17 American Gas Furnace Co Continuous rotary heat treating furnace
US3977926A (en) * 1974-12-20 1976-08-31 Western Electric Company, Inc. Methods for treating articles
US4063529A (en) * 1977-04-19 1977-12-20 Ellin Petrovich Bochkarev Device for epitaxial growing of semiconductor periodic structures from gas phase
JPS58122739A (ja) * 1982-01-18 1983-07-21 Hitachi Ltd 酸化拡散炉
JPS58210613A (ja) * 1982-06-02 1983-12-07 Hitachi Ltd 熱処理炉用石英管
DE3328709A1 (de) * 1983-08-09 1985-02-28 Bayer Ag, 5090 Leverkusen Drehrohrofen und dessen verwendung
JPH0322417A (ja) * 1989-06-19 1991-01-30 Nec Kyushu Ltd 半導体装置の製造装置
JPH0348431A (ja) * 1989-07-17 1991-03-01 Fujitsu Ltd 液相エピタキシャル結晶成長装置
US4941822A (en) * 1989-07-20 1990-07-17 Marvin Evans Apparatus for heat treating contaminated particulate material
US5073412A (en) * 1990-11-02 1991-12-17 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method of intercalating large quantities of fibrous structures

Also Published As

Publication number Publication date
DE69201314T2 (de) 1995-06-08
US5254172A (en) 1993-10-19
EP0505994B1 (de) 1995-02-01
JPH04299828A (ja) 1992-10-23
EP0505994A1 (de) 1992-09-30

Similar Documents

Publication Publication Date Title
DE69123508D1 (de) Vorrichtung zur Bearbeitung von Halbleiterscheiben
DE59208363D1 (de) Vorrichtung zur plasmaunterstützten bearbeitung von substraten
DE3852770D1 (de) Vorrichtung zur Handhabung von Wafern.
DE58901438D1 (de) Vorrichtung zur halterung von werkstuecken.
DE69201212D1 (de) Vorrichtung zur Vakuumbeschichtung.
DE59007942D1 (de) Vorrichtung zum Beschichten von Substraten.
DE69008228D1 (de) Plasmabearbeitungsvorrichtung.
DE3786263D1 (de) Vorrichtung zur plasmaphorese.
DE69006671D1 (de) Vorrichtung zur Verarbeitung von Grassoden.
DE68923324D1 (de) Vorrichtung zur Bildverarbeitung.
DE69108689D1 (de) Vorrichtung zum Reinigen von Siliciumscheiben.
DE68903693D1 (de) Einrichtung zur datenverarbeitung.
DE69130987T2 (de) Vorrichtung zur Behandlung von Halbleiter-Plättchen
DE68907058D1 (de) Vorrichtung zur beschichtung.
DE59104044D1 (de) Vorrichtung für den Transport von Substraten.
DE3882404D1 (de) Geraet zur bearbeitung von substraten.
DE59203986D1 (de) Vorrichtung für den Transport von Substraten.
DE69108838D1 (de) Vorrichtung zum Ätzen von Plättchen.
DE69021952D1 (de) Vorrichtung zur Handhabung von Halbleiterplättchen.
DE69207136D1 (de) Vorrichtung zur Bearbeitung von elektrischen Schaltungen
DE69101517D1 (de) Vorrichtung zum gleichzeitigen Positionieren von mehreren Schraubverbindungselementen.
DE69201314D1 (de) Vorrichtung zur Bearbeitung von Halbleitersubstraten.
DE3885460D1 (de) Vorrichtung zur behandlung von flüssigkeiten.
DE69428817D1 (de) Vorrichtung zur Kartenverarbeitung
DE69113553D1 (de) Schnittstellenvorrichtung zum Transportieren von Substraten zwischen Verarbeitungsgeräten.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee