JP5630935B2 - 工作物の熱誘起運動を抑制する機器及び装置 - Google Patents
工作物の熱誘起運動を抑制する機器及び装置 Download PDFInfo
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- JP5630935B2 JP5630935B2 JP2006544191A JP2006544191A JP5630935B2 JP 5630935 B2 JP5630935 B2 JP 5630935B2 JP 2006544191 A JP2006544191 A JP 2006544191A JP 2006544191 A JP2006544191 A JP 2006544191A JP 5630935 B2 JP5630935 B2 JP 5630935B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
Description
Claims (24)
- a)工作物の熱伝導時間より短い継続時間の照射フラッシュを該工作物に照射するための少なくとも一つの照射フラッシュ装置を含む工作物加熱システムであって、前記照射フラッシュを照射することにより前記工作物の中心領域と外周領域とが互いに相対的に垂直方向に変位する振動運動を含む熱誘起運動を該工作物に生じさせるようになっている工作物加熱システム、および
b)前記工作物の静止位置から0.5mmを超え、3mm未満の離間距離だけ離間して配置された減衰部材であって、該減衰部材と該工作物との間のガス圧が該工作物の振動運動に抗して該振動運動を減衰させる減衰力を該工作物に印加する減衰部材を含み、
前記工作物は半導体ウエハを含み、前記減衰部材は、前記ウエハから離間した減衰プレートを含み、
前記減衰プレートは、その表面に画定された環状陥凹部を備え、熱誘起した前記振動運動中に、前記ウエハの外縁を前記環状陥凹部内に収容するように構成される、機器。 - 前記減衰プレートは、1mmを超える距離だけ前記ウエハの静止位置から離間している、請求項1に記載の機器。
- 前記減衰プレートの上で前記ウエハを支持するように構成された支持システムをさらに備える、請求項1に記載の機器。
- 前記減衰プレートの下で前記ウエハを支持するように構成された支持システムをさらに備える、請求項1に記載の機器。
- 前記減衰部材は、第1及び第2の減衰部材を含み、前記機器はさらに、前記第1減衰部材の上で、且つ、前記第2減衰部材の下で前記工作物を支持するように構成された支持システムを備え得る、請求項1に記載の機器。
- 前記減衰部材は石英の窓を備える、請求項1に記載の機器。
- 前記減衰部材に補助熱エネルギーを供給するように構成された補助加熱器をさらに備える、請求項1に記載の機器。
- 前記工作物加熱システムはさらに、前記照射フラッシュに先立つ事前加熱段階中に前記工作物を事前加熱するように構成された事前加熱システムを備える、請求項1に記載の機器。
- 前記減衰部材と前記工作物の間の離間距離は、前記減衰力を調節するために調節可能である、請求項8に記載の機器。
- 前記減衰部材と前記工作物の間の離間距離は、前記事前加熱段階中に採用可能な少なくとも第1の距離と、前記第1の距離よりも短く、前記照射フラッシュ及び後続の運動減衰の段階中に採用可能な第2の距離との間で調節可能である、請求項8に記載の機器。
- 前記減衰部材と前記工作物の間の前記距離は、前記第1の距離と、前記第2の距離と、前記第2の距離よりも長く、前記運動減衰段階後の冷却段階中に採用可能な第3の距離との間で調節可能である、請求項10に記載の機器。
- 前記減衰部材は、複数の陥凹部が画定された平面プレートを含み、それによって、各陥凹部の近傍では、前記陥凹部から離れたところよりも前記減衰力が小さくなる、請求項1に記載の機器。
- a)工作物に、該工作物の熱伝導時間より短い継続時間の照射フラッシュを照射して、該工作物の中心領域と外周領域が相対的に垂直に変位する振動運動を含む熱誘起運動を該工作物に誘起させる段階、
b)減衰部材を準備し、該減衰部材を前記工作物の静止位置から0.5mmを超え、3mm未満の所定離間距離を保って前記減衰部材を前記工作物から隔置させて、該減衰部材と前記工作物との間のガス圧力が該工作物の前記振動運動に抗して該振動運動に減衰力を与えて該振動運動を減衰させる段階と、を含み、
前記工作物は半導体ウエハを含み、前記減衰部材は、前記ウエハから離間した減衰プレートを含み、前記振動運動の際に、前記減衰プレートの表面に画定された環状陥凹部に前記ウエハの外縁を収容することをさらに含む、方法。 - 前記離間距離が、前記ウエハの静止位置から1mmを超える、請求項13に記載の方法。
- 前記減衰プレートの上で前記ウエハを支持して保持する、請求項13に記載の方法。
- 前記減衰プレートの下で前記ウエハを支持して保持する、請求項13に記載の方法。
- 前記減衰部材は、第1及び第2の減衰部材を含み、前記第1減衰部材の上で、且つ、前記第2減衰部材の下で前記工作物を支持して保持する、請求項13に記載の方法。
- 前記減衰部材は石英の窓を備える、請求項13に記載の方法。
- 前記減衰部材に補助熱エネルギーを供給することをさらに含む、請求項13に記載の方法。
- 前記照射フラッシュの照射に先立つ事前加熱段階中に前記工作物を事前加熱することをさらに含む、請求項13に記載の方法。
- 前記減衰部材と前記工作物の間の距離を調節することをさらに含む、請求項20に記載の方法。
- 前記事前加熱段階中に前記減衰部材と前記工作物の間の第1の離間距離を維持することと、前記照射フラッシュ及び後続の運動減衰の段階中に前記第1の離間距離よりも短い前記減衰部材と前記工作物の間の第2の離間距離を維持することとをさらに含む、請求項20に記載の方法。
- 前記運動減衰段階後の冷却段間中に前記減衰部材と前記工作物の間で前記第2の離間距離よりも長い第3の離間距離を維持することをさらに含む、請求項22に記載の方法。
- 前記減衰部材は、複数の陥凹部が画定された平面プレートを含み、前記ガス圧力の変化に起因する前記減衰力が、各陥凹部近傍では、前記陥凹部から離れたところの前記減衰力よりも小さい、請求項13に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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US10/742,575 | 2003-12-19 | ||
US10/742,575 US9627244B2 (en) | 2002-12-20 | 2003-12-19 | Methods and systems for supporting a workpiece and for heat-treating the workpiece |
US56868504P | 2004-05-07 | 2004-05-07 | |
US60/568,685 | 2004-05-07 | ||
PCT/CA2004/002155 WO2005059991A1 (en) | 2003-12-19 | 2004-12-17 | Apparatuses and methods for suppressing thermally induced motion of a workpiece |
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JP2012158761A Division JP5926142B2 (ja) | 2003-12-19 | 2012-07-17 | 工作物の熱誘起運動を抑制する機器及び装置 |
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JP2007519232A JP2007519232A (ja) | 2007-07-12 |
JP2007519232A5 JP2007519232A5 (ja) | 2008-02-14 |
JP5630935B2 true JP5630935B2 (ja) | 2014-11-26 |
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JP2006544191A Active JP5630935B2 (ja) | 2003-12-19 | 2004-12-17 | 工作物の熱誘起運動を抑制する機器及び装置 |
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US (1) | US7501607B2 (ja) |
JP (1) | JP5630935B2 (ja) |
WO (1) | WO2005059991A1 (ja) |
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2004
- 2004-12-17 WO PCT/CA2004/002155 patent/WO2005059991A1/en active Application Filing
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WO2005059991A1 (en) | 2005-06-30 |
US20050133167A1 (en) | 2005-06-23 |
US7501607B2 (en) | 2009-03-10 |
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