JP2007519232A - 工作物の熱誘起運動を抑制する機器及び装置 - Google Patents
工作物の熱誘起運動を抑制する機器及び装置 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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Abstract
Description
Claims (66)
- a)工作物の動きを熱により誘起するように構成された工作物加熱システムと、
b)前記工作物から離間し、減衰力を加えて前記工作物の前記動きを減衰させるように構成された減衰部材とを備える、機器。 - 前記減衰部材は、前記減衰部材と前記工作物の間のガス圧が前記工作物の前記動きを妨げるのに十分に短い距離だけ前記工作物の静止位置から離間している、請求項1に記載の機器。
- 前記工作物は半導体ウエハを含み、前記減衰部材は、前記ウエハから離間した減衰プレートを含む、請求項2に記載の機器。
- 前記減衰プレートは、1mm程度の距離だけ前記ウエハの静止位置から離間している、請求項3に記載の機器。
- 前記減衰プレートは、0.5mmよりも長い距離だけ前記ウエハの前記静止位置から離間している、請求項4に記載の機器。
- 前記減衰プレートは、3mm未満の距離だけ前記ウエハの前記静止位置から離間している、請求項4に記載の機器。
- 前記減衰プレートは、0.5mm〜3mmの距離だけ前記ウエハの前記静止位置から離間している、請求項4に記載の機器。
- 前記減衰プレートの上で前記ウエハを支持するように構成された支持システムをさらに備える、請求項3に記載の機器。
- 前記減衰プレートの下で前記ウエハを支持するように構成された支持システムをさらに備える、請求項3に記載の機器。
- 前記減衰部材は、第1及び第2の減衰部材を含み、前記機器はさらに、前記第1減衰部材の上で、且つ、前記第2減衰部材の下で前記工作物を支持するように構成された支持システムを備え得る、請求項2に記載の機器。
- 前記減衰プレートは、その表面に画定された環状陥凹部を備え、前記熱誘起運動中に、前記ウエハの外縁を前記環状陥凹部内に収容するように構成される、請求項3に記載の機器。
- 前記工作物加熱システムは、前記工作物を照射するように構成された照射システムを備える、請求項1に記載の機器。
- 前記照射システムは、照射フラッシュに前記工作物を露出させるように構成された少なくとも1つの照射フラッシュ装置を備える、請求項12に記載の機器。
- 前記照射フラッシュ装置は、フラッシュ・ランプを備える、請求項13に記載の機器。
- 前記照射フラッシュ装置は、マイクロ波パルス発生器を備える、請求項13に記載の機器。
- 前記減衰部材は、前記少なくとも1つの照射フラッシュ装置と前記工作物の間に挿入され、前記照射フラッシュの少なくとも一部の波長に対して透明である、請求項13に記載の機器。
- 前記減衰部材は窓を備える、請求項2に記載の機器。
- 前記窓は石英の窓を含む、請求項17に記載の機器。
- 前記減衰部材に補助熱エネルギーを供給するように構成された補助加熱器をさらに備える、請求項2に記載の機器。
- 前記補助加熱器は、前記工作物の外周領域の近傍に配設された電気抵抗器式加熱器を含む、請求項19に記載の機器。
- 前記補助加熱器は、前記工作物の外周領域の近傍に、前記工作物の中央近傍の前記減衰部材の材料よりも放射率が大きい材料を含む、請求項19に記載の機器。
- 前記照射システムはさらに、前記照射フラッシュに先立つ事前加熱段階中に前記工作物を事前加熱するように構成された事前加熱システムを備える、請求項13に記載の機器。
- 前記減衰部材と前記工作物の間の距離は、前記減衰力を調節するために調節可能である、請求項22に記載の機器。
- 前記減衰部材と前記工作物の間の距離は、前記事前加熱段階中に採用可能な少なくとも第1の距離と、前記第1の距離よりも短く、前記照射フラッシュ及び後続の運動減衰の段階中に採用可能な第2の距離との間で調節可能である、請求項22に記載の機器。
- 前記第1の距離は少なくとも2mmである、請求項24に記載の機器。
- 前記第2の距離は、前記照射フラッシュ及び前記運動減衰の段階中に、前記減衰部材と前記工作物の間のガス圧が前記工作物の前記動きを妨げるのに十分に短い、請求項24に記載の機器。
- 前記第2の距離は約1mmである、請求項26に記載の機器。
- 前記第2の距離は約0.5mmである、請求項26に記載の機器。
- 前記第2の距離は約2mm未満である、請求項26に記載の機器。
- 前記減衰部材と前記工作物の間の前記距離は、前記第1の距離と、前記第2の距離と、前記第2の距離よりも長く、前記運動減衰段階後の冷却段階中に採用可能な第3の距離との間で調節可能である、請求項24に記載の機器。
- 前記第3の距離は少なくとも2mmである、請求項30に記載の機器。
- 前記減衰部材は、空間的に変化する減衰力を加えるように構成される、請求項2に記載の機器。
- 前記減衰部材は、複数の陥凹部が画定された平面プレートを含み、それによって、各陥凹部の近傍では、前記陥凹部から離れたところよりも前記減衰力が小さくなる、請求項32に記載の機器。
- a)工作物の動きを熱により誘起させる手段と、
b)減衰力を加えて前記工作物の前記動きを減衰させる手段とを備え、前記加える手段は前記工作物から離間している、機器。 - a)工作物の動きを熱により誘起させることと、
b)前記工作物から離間した減衰部材によって減衰力を加えて、前記工作物の前記動きを減衰させることとを含む、方法。 - 減衰力を加えることは、前記減衰部材と前記工作物の間の距離を、前記減衰部材と前記工作物の間のガス圧が前記工作物の前記動きを妨げるのに十分に短く維持することを含む、請求項35に記載の方法。
- 前記工作物は半導体ウエハを含み、前記減衰部材は、前記ウエハから離間した減衰プレートを含む、請求項36に記載の方法。
- 維持することは、前記ウエハの静止位置から1mm程度の距離のところに前記減衰プレートを維持することを含む、請求項37に記載の方法。
- 維持することは、前記ウエハの前記静止位置から0.5mmよりも長い距離のところに前記減衰プレートを維持することを含む、請求項38に記載の方法。
- 維持することは、前記ウエハの前記静止位置から3mm未満の距離のところに前記減衰プレートを維持することを含む、請求項38に記載の方法。
- 維持することは、前記ウエハの前記静止位置から0.5mm〜3mmの距離のところに前記減衰プレートを維持することを含む、請求項38に記載の方法。
- 維持することは、前記減衰プレートの上で前記ウエハを支持することを含む、請求項37に記載の方法。
- 維持することは、前記減衰プレートの下で前記ウエハを支持することを含む、請求項37に記載の方法。
- 前記減衰部材は、第1及び第2の減衰部材を含み、維持することは、前記第1減衰部材の上で、且つ、前記第2減衰部材の下で前記工作物を支持することを含む、請求項36に記載の方法。
- 前記熱誘起運動中に、前記減衰プレートの表面に画定された環状陥凹部に前記ウエハの外縁を収容することをさらに含む、請求項37に記載の方法。
- 熱により動きを誘起することは、照射フラッシュに前記工作物を露出させることを含む、請求項35に記載の方法。
- 露出させることは、フラッシュ・ランプによって生成される照射フラッシュに前記工作物を露出させることを含む、請求項46に記載の方法。
- 露出させることは、マイクロ波パルス発生器によって生成される照射フラッシュに前記工作物を露出させることを含む、請求項47に記載の方法。
- 前記減衰部材は、前記照射フラッシュの少なくとも一部の波長に対して透明であり、照射することは、前記減衰部材を貫通して前記工作物に前記照射フラッシュの少なくとも一部を伝達することを含む、請求項46に記載の方法。
- 前記減衰部材は窓を備える、請求項36に記載の方法。
- 前記窓は石英の窓を含む、請求項50に記載の方法。
- 前記減衰部材に補助熱エネルギーを供給することをさらに含む、請求項36に記載の方法。
- 供給することは、前記工作物の外周領域の近傍に配設された電気抵抗器式加熱器に電流を供給することを含む、請求項52に記載の方法。
- 供給することは、前記工作物の外周領域の近傍で、前記工作物の中央近傍の前記減衰部材の材料よりも放射率が大きい材料を照射することを含む、請求項52に記載の方法。
- 前記照射フラッシュに先立つ事前加熱段階中に前記工作物を事前加熱することをさらに含む、請求項46に記載の方法。
- 前記減衰部材と前記工作物の間の距離を調節することをさらに含む、請求項55に記載の方法。
- 前記事前加熱段階中に前記減衰部材と前記工作物の間の第1の距離を維持することと、前記照射フラッシュ及び後続の運動減衰の段階中に前記第1の距離よりも短い前記減衰部材と前記工作物の間の第2の距離を維持することとをさらに含む、請求項55に記載の方法。
- 第1の距離を維持することは、前記事前加熱段階中に前記減衰部材と前記工作物の間で少なくとも2mmの距離を維持することを含む、請求項57に記載の方法。
- 第2の距離を維持することは、前記照射フラッシュ及び前記運動減衰の段階中に前記減衰部材と前記工作物の間のガス圧が前記工作物の前記動きを妨げるのに十分に短い距離を維持することを含む、請求項58に記載の方法。
- 第2の距離を維持することは、前記照射フラッシュ及び前記運動減衰の段階中に、前記減衰部材と前記工作物の間で約1mmの距離を維持することを含む、請求項59に記載の方法。
- 第2の距離を維持することは、前記照射フラッシュ及び前記運動減衰の段階中に、前記減衰部材と前記工作物の間で約0.5mmの距離を維持することを含む、請求項59に記載の方法。
- 第2の距離を維持することは、前記照射フラッシュ及び前記運動減衰の段階中に、前記減衰部材と前記工作物の間で約2mm未満の距離を維持することを含む、請求項59に記載の方法。
- 前記運動減衰段階後の冷却段間中に前記減衰部材と前記工作物の間で前記第2の距離よりも長い第3の距離を維持することをさらに含む、請求項57に記載の方法。
- 第3の距離を維持することは、前記冷却段階中に前記減衰部材と前記工作物の間で少なくとも2mmの距離を維持することを含む、請求項63に記載の方法。
- 加えることは、空間的に変化する減衰力を加えることを含む、請求項36に記載の方法。
- 前記減衰部材は、複数の陥凹部が画定された平面プレートを含み、その結果、ガス圧の変化に起因する前記減衰力が、各陥凹部近傍では、前記陥凹部から離れたところの前記減衰力よりも小さい、請求項65に記載の方法。
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US10/742,575 US9627244B2 (en) | 2002-12-20 | 2003-12-19 | Methods and systems for supporting a workpiece and for heat-treating the workpiece |
US10/742,575 | 2003-12-19 | ||
US56868504P | 2004-05-07 | 2004-05-07 | |
US60/568,685 | 2004-05-07 | ||
PCT/CA2004/002155 WO2005059991A1 (en) | 2003-12-19 | 2004-12-17 | Apparatuses and methods for suppressing thermally induced motion of a workpiece |
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WO2005059991A1 (en) | 2005-06-30 |
US7501607B2 (en) | 2009-03-10 |
JP5630935B2 (ja) | 2014-11-26 |
US20050133167A1 (en) | 2005-06-23 |
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