DE69132826T2 - Heizgerät für Halbleiterwafers oder Substrate - Google Patents

Heizgerät für Halbleiterwafers oder Substrate

Info

Publication number
DE69132826T2
DE69132826T2 DE69132826T DE69132826T DE69132826T2 DE 69132826 T2 DE69132826 T2 DE 69132826T2 DE 69132826 T DE69132826 T DE 69132826T DE 69132826 T DE69132826 T DE 69132826T DE 69132826 T2 DE69132826 T2 DE 69132826T2
Authority
DE
Germany
Prior art keywords
substrates
heater
semiconductor wafers
wafers
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69132826T
Other languages
English (en)
Other versions
DE69132826D1 (de
Inventor
Christian M Gronet
James F Gibbons
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of DE69132826D1 publication Critical patent/DE69132826D1/de
Publication of DE69132826T2 publication Critical patent/DE69132826T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D99/00—Subject matter not provided for in other groups of this subclass
    • F27D99/0001—Heating elements or systems
    • F27D99/0006—Electric heating elements or system
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B5/00—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated
    • F27B5/06—Details, accessories, or equipment peculiar to furnaces of these types
    • F27B5/14—Arrangements of heating devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/12—Heating of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/18—Controlling or regulating
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00—Furnaces of a kind not covered by any preceding group
    • F27B17/0016—Chamber type furnaces
    • F27B17/0025—Especially adapted for treating semiconductor wafers
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D99/00—Subject matter not provided for in other groups of this subclass
    • F27D99/0001—Heating elements or systems
    • F27D99/0033—Heating elements or systems using burners
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/06—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
DE69132826T 1990-01-19 1991-01-18 Heizgerät für Halbleiterwafers oder Substrate Expired - Fee Related DE69132826T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US46780890A 1990-01-19 1990-01-19

Publications (2)

Publication Number Publication Date
DE69132826D1 DE69132826D1 (de) 2002-01-03
DE69132826T2 true DE69132826T2 (de) 2002-08-22

Family

ID=23857269

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69118513T Expired - Fee Related DE69118513T2 (de) 1990-01-19 1991-01-18 Vorrichtung zum erwärmen von halbleiterscheiben oder -substraten
DE69132826T Expired - Fee Related DE69132826T2 (de) 1990-01-19 1991-01-18 Heizgerät für Halbleiterwafers oder Substrate

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69118513T Expired - Fee Related DE69118513T2 (de) 1990-01-19 1991-01-18 Vorrichtung zum erwärmen von halbleiterscheiben oder -substraten

Country Status (5)

Country Link
EP (3) EP0695922B1 (de)
JP (1) JPH0693440B2 (de)
KR (1) KR100194267B1 (de)
DE (2) DE69118513T2 (de)
WO (1) WO1991010873A1 (de)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0693440B2 (ja) * 1990-01-19 1994-11-16 ジー スクウェアード セミコンダクター コーポレイション 急速加熱装置及び方法
GB9214380D0 (en) * 1992-07-07 1992-08-19 Sev Furnaces Ltd Radiation transmitting apparatus
US5561735A (en) * 1994-08-30 1996-10-01 Vortek Industries Ltd. Rapid thermal processing apparatus and method
US5755511A (en) * 1994-12-19 1998-05-26 Applied Materials, Inc. Method and apparatus for measuring substrate temperatures
JP3493880B2 (ja) * 1996-02-28 2004-02-03 信越半導体株式会社 輻射加熱装置および加熱方法
US6072160A (en) * 1996-06-03 2000-06-06 Applied Materials, Inc. Method and apparatus for enhancing the efficiency of radiant energy sources used in rapid thermal processing of substrates by energy reflection
JP3084232B2 (ja) * 1996-06-04 2000-09-04 イートン コーポレーション 縦型加熱処理装置
US6123766A (en) * 1997-05-16 2000-09-26 Applied Materials, Inc. Method and apparatus for achieving temperature uniformity of a substrate
US5965047A (en) * 1997-10-24 1999-10-12 Steag Ast Rapid thermal processing (RTP) system with rotating substrate
US6023555A (en) * 1998-08-17 2000-02-08 Eaton Corporation Radiant heating apparatus and method
US6108491A (en) * 1998-10-30 2000-08-22 Applied Materials, Inc. Dual surface reflector
JP4625183B2 (ja) * 1998-11-20 2011-02-02 ステアーグ アール ティ ピー システムズ インコーポレイテッド 半導体ウェハのための急速加熱及び冷却装置
US5965048A (en) * 1998-11-20 1999-10-12 General Electric Company Heated chamber including an open wall with a gas curtain
JP2000269156A (ja) * 1999-03-18 2000-09-29 Ulvac Japan Ltd 基板加熱装置及び仕込室
US7037797B1 (en) 2000-03-17 2006-05-02 Mattson Technology, Inc. Localized heating and cooling of substrates
US6476362B1 (en) 2000-09-12 2002-11-05 Applied Materials, Inc. Lamp array for thermal processing chamber
US6570137B1 (en) * 2002-03-04 2003-05-27 Applied Materials, Inc. System and method for lamp split zone control
FR2846786B1 (fr) * 2002-11-05 2005-06-17 Procede de recuit thermique rapide de tranches a couronne
CN1729554B (zh) 2002-12-20 2014-05-07 马特森技术有限公司 用来支撑工件和用来热处理工件的方法和系统
US20080090309A1 (en) * 2003-10-27 2008-04-17 Ranish Joseph M Controlled annealing method
US8536492B2 (en) 2003-10-27 2013-09-17 Applied Materials, Inc. Processing multilayer semiconductors with multiple heat sources
US7102141B2 (en) * 2004-09-28 2006-09-05 Intel Corporation Flash lamp annealing apparatus to generate electromagnetic radiation having selective wavelengths
JP2008071787A (ja) 2006-09-12 2008-03-27 Ushio Inc 光照射式加熱装置および光照射式加熱方法
KR20090057729A (ko) * 2007-12-03 2009-06-08 에이피시스템 주식회사 급속열처리장치의 히터블록
KR101610269B1 (ko) 2008-05-16 2016-04-07 맷슨 테크놀로지, 인크. 워크피스 파손 방지 방법 및 장치
WO2011021549A1 (ja) * 2009-08-18 2011-02-24 東京エレクトロン株式会社 熱処理装置
TWI399863B (zh) * 2010-05-26 2013-06-21 Inventec Solar Energy Corp 快速升溫退火裝置及形成太陽能電池選擇性射極結構的方法
US8878461B2 (en) 2011-06-30 2014-11-04 Applied Materials, Inc. Lamp failure detector
US10699922B2 (en) * 2014-07-25 2020-06-30 Applied Materials, Inc. Light pipe arrays for thermal chamber applications and thermal processes
KR102110267B1 (ko) * 2014-10-31 2020-05-14 와틀로 일렉트릭 매뉴팩츄어링 컴파니 히터를 위한 열적 동적 응답 감지 시스템
FR3140672A1 (fr) * 2022-10-07 2024-04-12 Annealsys Four à recuit thermique rapide à étanchéité améliorée

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2057776A (en) * 1934-10-29 1936-10-20 Ford Motor Co Paint baking apparatus
US3761678A (en) * 1971-05-03 1973-09-25 Aerojet General Co High density spherical modules
US3862397A (en) * 1972-03-24 1975-01-21 Applied Materials Tech Cool wall radiantly heated reactor
US3836751A (en) * 1973-07-26 1974-09-17 Applied Materials Inc Temperature controlled profiling heater
US4081313A (en) * 1975-01-24 1978-03-28 Applied Materials, Inc. Process for preparing semiconductor wafers with substantially no crystallographic slip
US4680447A (en) * 1983-08-11 1987-07-14 Genus, Inc. Cooled optical window for semiconductor wafer heating
JPS61196515A (ja) * 1985-02-26 1986-08-30 Mitsubishi Electric Corp 帯域溶融型半導体製造装置
US4789771A (en) * 1985-10-07 1988-12-06 Epsilon Limited Partnership Method and apparatus for substrate heating in an axially symmetric epitaxial deposition apparatus
US4859832A (en) * 1986-09-08 1989-08-22 Nikon Corporation Light radiation apparatus
FR2620519B1 (fr) * 1987-09-14 1990-01-19 Lefevere Jules Appareil de chauffage electrique
JPH0693440B2 (ja) * 1990-01-19 1994-11-16 ジー スクウェアード セミコンダクター コーポレイション 急速加熱装置及び方法

Also Published As

Publication number Publication date
JPH05503570A (ja) 1993-06-10
KR100194267B1 (ko) 1999-06-15
EP1049356A2 (de) 2000-11-02
EP1049356A3 (de) 2001-03-28
EP0511294B1 (de) 1996-04-03
EP0695922B1 (de) 2001-11-21
DE69118513T2 (de) 1996-10-02
EP0511294A4 (en) 1993-09-15
DE69132826D1 (de) 2002-01-03
EP0511294A1 (de) 1992-11-04
DE69118513D1 (de) 1996-05-09
KR920704080A (ko) 1992-12-19
JPH0693440B2 (ja) 1994-11-16
WO1991010873A1 (en) 1991-07-25
EP0695922A1 (de) 1996-02-07

Similar Documents

Publication Publication Date Title
DE69132826T2 (de) Heizgerät für Halbleiterwafers oder Substrate
DE69333619D1 (de) Herstellungsverfahren für Halbleitersubstrate
DE69529858D1 (de) Oberflächenbehandlung für Halbleitersubstrat
DE68914479T2 (de) Randbelichtungsverfahren für Halbleiterscheiben.
DE3855424T2 (de) Haltevorrichtung für Substratscheiben
DE69123269T2 (de) Überzugsschicht für mikroelektronische Anordnungen und Substrate
DE69430765T2 (de) Eingebettetes Substrat für integrierte Schaltungsmodule
DE69131762T2 (de) Herstellungsverfahren für Halbleitereinrichtungen
EP0451740A3 (en) Temperature control system for semiconductor wafer or substrate
DE69428618D1 (de) Thermischer Reaktor für Operationen zur Bearbeitung von Halbleiter-Wafer
DE69320391T2 (de) Reinigungsflüssigkeit für Halbleitersubstrate
DE69127515D1 (de) Substratvorspannungsgenerator für Halbleiteranordnungen
DE69513361T2 (de) Trägerbehälter für Substratscheiben
DE69111487T2 (de) Beschichtete Substrate.
DE69131241T2 (de) Herstellungsverfahren für Halbleiteranordnungen
DE69333843D1 (de) Ätzverfahren für Silizium-Substrat
DE69029107T2 (de) Substrate für beta-Galactosidase
DE69400142T2 (de) Trägerkassette für Siliziumscheiben
DE69103748T2 (de) Trägerkassette für Halbleiterscheiben.
DE69025499T2 (de) Fotolack-Beschichtung für Halbleiterplättchen
DE69031212T2 (de) Randbelichtungsverfahren für Halbleiterscheiben
DE68907796T2 (de) Anlage zur Beschichtung von Halbleiterscheiben.
DE3787367D1 (de) Heizapparat für Halbleiter-Wafer.
DE69417173T2 (de) Keramiksubstrat für Halbleitervorrichtung
DE69112613T2 (de) Trägerkassette für Halbleiterscheiben.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee