JPH05503570A - 急速加熱装置及び方法 - Google Patents
急速加熱装置及び方法Info
- Publication number
- JPH05503570A JPH05503570A JP3503582A JP50358291A JPH05503570A JP H05503570 A JPH05503570 A JP H05503570A JP 3503582 A JP3503582 A JP 3503582A JP 50358291 A JP50358291 A JP 50358291A JP H05503570 A JPH05503570 A JP H05503570A
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- Prior art keywords
- heating
- substrate
- radiant energy
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- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010438 heat treatment Methods 0.000 title claims description 64
- 238000000034 method Methods 0.000 title description 11
- 239000000758 substrate Substances 0.000 claims description 36
- 230000005855 radiation Effects 0.000 claims description 24
- 239000010453 quartz Substances 0.000 claims description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 238000012545 processing Methods 0.000 claims description 16
- 238000001816 cooling Methods 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000012546 transfer Methods 0.000 claims description 5
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- 239000010931 gold Substances 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
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- 239000010937 tungsten Substances 0.000 description 3
- -1 Tungsten halogen Chemical class 0.000 description 2
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- 241000255925 Diptera Species 0.000 description 1
- 241000750004 Nestor meridionalis Species 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
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- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
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- 150000002367 halogens Chemical class 0.000 description 1
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- 230000003446 memory effect Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
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- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
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- 230000008646 thermal stress Effects 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 235000021419 vinegar Nutrition 0.000 description 1
- 239000000052 vinegar Substances 0.000 description 1
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B5/00—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated
- F27B5/06—Details, accessories, or equipment peculiar to furnaces of these types
- F27B5/14—Arrangements of heating devices
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D99/00—Subject matter not provided for in other groups of this subclass
- F27D99/0001—Heating elements or systems
- F27D99/0006—Electric heating elements or system
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/12—Heating of the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/18—Controlling or regulating
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B17/00—Furnaces of a kind not covered by any preceding group
- F27B17/0016—Chamber type furnaces
- F27B17/0025—Especially adapted for treating semiconductor wafers
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D99/00—Subject matter not provided for in other groups of this subclass
- F27D99/0001—Heating elements or systems
- F27D99/0033—Heating elements or systems using burners
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/06—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.急速加熱処理の際、基板を加熱するための加熱源であって、相対的なエネル ギ強度パターンで基板の所定の一定領域を梧射する、複数の輻射エネルギ源と、 隣接するエネルギ源の所定の輻射領域の部分が隣のエネルギ源の所定の輻射領域 と重なり合うように、儒射エネルギ源を隣接して取付けるための手段と、基板の 異なる領域での輻射を制御するために、輻射エネルギ源の強度を制御するための 手段と、 を含むことを特徴とする加熱源。 2.基板の急速加熱処理の際、基板を加熱するための加熱源であって、複数の輻 射エネルギ源と、 複数の光ガイドとを含み、該光ガイドは各々、輻射エネルギ源を包囲し輻射エネ ルギ源を越えて延びており、前記光ガイドは、相対的な輻射強度パターンで基板 の所定の一定の領域を輻射するために、光ガイドの軸線に沿って関連した輻射エ ネルギ源から基板の方へ輻射エネルギを差し向けるように各々作用し、光ガイド は、隣接する光ガイドの所定の一定の輻射領域の一部が互いに重なり合い、かつ 、輻射エネルギ源の各々の強度に応じて基板に輻射強度を提供するように前記部 分での強度が増すように、間隔を隔てている、ことを特徴とする加熱源。 3.基板の所定の温度形体を維持するため、基板の種々の箇所で温度を検出し、 各輻射エネルギ源からの輻射エネルギを制御するための手段を有することを特徴 とする、請求の範囲第2項に記載の加熱源。 4.前記温度検出手段は、基板の前記箇所からの輻射を検出する高温計からなる ことを特徴とする、請求の範囲第2項に記載の加熱源。 基板を加熱するための加熱装置であって、複数の輻射エネルギ源と、 輻射エネルギ源の各々に対して間隔を隔てた複数の光ガイドとを含み、前記光ガ イドは、エネルギ源を包囲しエネルギ源を越えて延びており、かつ、エネルギ源 からのエネルギを、光ガイドに沿って、基板の表面の所定の一定の重なり領域に 差し向けるように作用し、 輻射エネルギ源を室に通して基板の表面を輻射する窓を有する、排気された基板 処理室と、 基板を室内に窓に隣接して支持するための手段と、種々の箇所で基板の温度を検 出するための手段と、輻射エネルギ源の各々からの輻射エネルギを制御して基板 上に所定の温度形体を維持するための、輻度に応答する制御手段と、をさらに含 むことを特徴とする加熱装置。 6.各輻射エネルギ源は、細長い高強度ランプであることを特徴とする請求の範 囲第5項に記載の加熱源。 7.光ガイドは、冷却剤を循環させて光ガイド及び関連したランプを冷却するこ とができる冷却室に延びていることを特徴とする請求の範囲第6項に記載の加熱 装置。 8.前記窓は、水冷石英窓組立体からなることを特徴とする請求の範囲第5項に 記載の加熱装置。 9.石英窓組立体は、複数の短い光ガイドを有し、該短い光ガイドは前記複数の 光ガイドと位置合わせされており、前記複数の短い光ガイドは、両端が間隔を隔 てたフランジ板に固定され、外壁がフランジ板の縁部に固定されており、短い光 ガイドのフランジ板と外壁は、冷却室を構成しており、第1及び第2の石英窓は 、フランジ板に密封されて、フランジ板及び光ガイドとともに真空室を構成して いることを特徴とする請求の範囲第8項に記載の加熱装置。 10.基板を支持するための手段は、前記支持体を前記室に回転可能に取付ける ための手段を有することを特徴とする、請求の範囲第5項に記載の加熱装置。 11.前記取付け手段はベアリングに取付けられ、磁石を有しており、該磁石の 磁場は、前記壁を貫通して磁気駆動手段に接続し、これにより前記取付け手段を 回転させることを特徴とする、請求の範囲第10項に記載の加熱装置。 12.ランプは底部をもつ包囲体を有しており、底部から光ガイドに熱エネルギ を伝達するため、底部と光ガイドとの間に熱電導体が直接配置されていることを 特徴とする、請求の範囲第6項に記載の加熱装置。 13.ランプは底部をもつ包囲体を有しており、底部から光力イド及び冷却剤に 熱エネルギを伝達するため、底部と光ガイドとの間に熱電導体が直接配置されて いることを特徴とする、請求の範囲第7項に記載の加熱装置。 14.熱電導体は弾力性のある金属であることを特徴とする、請求の範囲第12 項に記載の加熱装置。 15.基板の急速熱処理の際、基板を加熱するための加熱源であって、フィラメ ントを各々有する複数の輻射エネルギ源と、複数の光ガイドとを含み、該光ガイ ドは各々、輻射エネルギ源のフィラメントを包囲しており、前記光ガイドは、互 いに隣接して取付けられており、かつ、相対的な輻射強度パターンで基板の所定 の一定の領域を輻射するために、関連したフィラメントから光ガイドの軸線に沿 って基板の方へ輻射エネルギを差し向けるように各々作用し、光ガイドは、隣接 する光ガイドの所定の一定の輻射領域の一部が重なり合い、かつ、輻射エネルギ 源の各々の強度に応じて基板に輻射強度を提供するように前記部分での強度が増 すように、間隔を隔てていることを特徴とする加熱源。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US46780890A | 1990-01-19 | 1990-01-19 | |
US467,808 | 1990-01-19 | ||
PCT/US1991/000266 WO1991010873A1 (en) | 1990-01-19 | 1991-01-18 | Heating apparatus for semiconductor wafers or substrates |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH05503570A true JPH05503570A (ja) | 1993-06-10 |
JPH0693440B2 JPH0693440B2 (ja) | 1994-11-16 |
Family
ID=23857269
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3503582A Expired - Lifetime JPH0693440B2 (ja) | 1990-01-19 | 1991-01-18 | 急速加熱装置及び方法 |
Country Status (5)
Country | Link |
---|---|
EP (3) | EP0511294B1 (ja) |
JP (1) | JPH0693440B2 (ja) |
KR (1) | KR100194267B1 (ja) |
DE (2) | DE69118513T2 (ja) |
WO (1) | WO1991010873A1 (ja) |
Cited By (6)
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JP2000068223A (ja) * | 1998-08-17 | 2000-03-03 | Eaton Corp | 放射加熱装置及びその方法 |
JP2000161866A (ja) * | 1998-11-20 | 2000-06-16 | General Electric Co <Ge> | 雰囲気制御された加工品加熱チャンバ |
JP2002530883A (ja) * | 1998-11-20 | 2002-09-17 | ステアーグ アール ティ ピー システムズ インコーポレイテッド | 半導体ウェハのための急速加熱及び冷却装置 |
JP2005520329A (ja) * | 2002-03-04 | 2005-07-07 | アプライド マテリアルズ インコーポレイテッド | ランプ分割ゾーン制御のためのシステムおよび方法 |
WO2011021549A1 (ja) * | 2009-08-18 | 2011-02-24 | 東京エレクトロン株式会社 | 熱処理装置 |
JP2011505707A (ja) * | 2007-12-03 | 2011-02-24 | アジア パシフィック システムズ インコーポレイテッド | 急速熱処理装置のヒータブロック |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
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EP0511294B1 (en) * | 1990-01-19 | 1996-04-03 | Applied Materials, Inc. | Heating apparatus for semiconductor wafers or substrates |
GB9214380D0 (en) * | 1992-07-07 | 1992-08-19 | Sev Furnaces Ltd | Radiation transmitting apparatus |
US5561735A (en) * | 1994-08-30 | 1996-10-01 | Vortek Industries Ltd. | Rapid thermal processing apparatus and method |
US5755511A (en) * | 1994-12-19 | 1998-05-26 | Applied Materials, Inc. | Method and apparatus for measuring substrate temperatures |
JP3493880B2 (ja) * | 1996-02-28 | 2004-02-03 | 信越半導体株式会社 | 輻射加熱装置および加熱方法 |
US6072160A (en) * | 1996-06-03 | 2000-06-06 | Applied Materials, Inc. | Method and apparatus for enhancing the efficiency of radiant energy sources used in rapid thermal processing of substrates by energy reflection |
JP3084232B2 (ja) * | 1996-06-04 | 2000-09-04 | イートン コーポレーション | 縦型加熱処理装置 |
US6123766A (en) * | 1997-05-16 | 2000-09-26 | Applied Materials, Inc. | Method and apparatus for achieving temperature uniformity of a substrate |
US5965047A (en) * | 1997-10-24 | 1999-10-12 | Steag Ast | Rapid thermal processing (RTP) system with rotating substrate |
US6108491A (en) * | 1998-10-30 | 2000-08-22 | Applied Materials, Inc. | Dual surface reflector |
JP2000269156A (ja) * | 1999-03-18 | 2000-09-29 | Ulvac Japan Ltd | 基板加熱装置及び仕込室 |
US7037797B1 (en) | 2000-03-17 | 2006-05-02 | Mattson Technology, Inc. | Localized heating and cooling of substrates |
US6476362B1 (en) | 2000-09-12 | 2002-11-05 | Applied Materials, Inc. | Lamp array for thermal processing chamber |
FR2846786B1 (fr) * | 2002-11-05 | 2005-06-17 | Procede de recuit thermique rapide de tranches a couronne | |
WO2004057650A1 (en) | 2002-12-20 | 2004-07-08 | Mattson Technology Canada, Inc. | Methods and systems for supporting a workpiece and for heat-treating the workpiece |
US20080090309A1 (en) * | 2003-10-27 | 2008-04-17 | Ranish Joseph M | Controlled annealing method |
US8536492B2 (en) | 2003-10-27 | 2013-09-17 | Applied Materials, Inc. | Processing multilayer semiconductors with multiple heat sources |
US7102141B2 (en) * | 2004-09-28 | 2006-09-05 | Intel Corporation | Flash lamp annealing apparatus to generate electromagnetic radiation having selective wavelengths |
JP2008071787A (ja) | 2006-09-12 | 2008-03-27 | Ushio Inc | 光照射式加熱装置および光照射式加熱方法 |
KR101610269B1 (ko) | 2008-05-16 | 2016-04-07 | 맷슨 테크놀로지, 인크. | 워크피스 파손 방지 방법 및 장치 |
TWI399863B (zh) * | 2010-05-26 | 2013-06-21 | Inventec Solar Energy Corp | 快速升溫退火裝置及形成太陽能電池選擇性射極結構的方法 |
US8878461B2 (en) | 2011-06-30 | 2014-11-04 | Applied Materials, Inc. | Lamp failure detector |
US10699922B2 (en) * | 2014-07-25 | 2020-06-30 | Applied Materials, Inc. | Light pipe arrays for thermal chamber applications and thermal processes |
WO2016069808A1 (en) * | 2014-10-31 | 2016-05-06 | Watlow Electric Manufacturing Company | Thermal dynamic response sensing systems for heaters |
FR3140672A1 (fr) * | 2022-10-07 | 2024-04-12 | Annealsys | Four à recuit thermique rapide à étanchéité améliorée |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
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US2057776A (en) * | 1934-10-29 | 1936-10-20 | Ford Motor Co | Paint baking apparatus |
US3761678A (en) * | 1971-05-03 | 1973-09-25 | Aerojet General Co | High density spherical modules |
US3862397A (en) * | 1972-03-24 | 1975-01-21 | Applied Materials Tech | Cool wall radiantly heated reactor |
US3836751A (en) * | 1973-07-26 | 1974-09-17 | Applied Materials Inc | Temperature controlled profiling heater |
US4081313A (en) * | 1975-01-24 | 1978-03-28 | Applied Materials, Inc. | Process for preparing semiconductor wafers with substantially no crystallographic slip |
US4680447A (en) * | 1983-08-11 | 1987-07-14 | Genus, Inc. | Cooled optical window for semiconductor wafer heating |
JPS61196515A (ja) * | 1985-02-26 | 1986-08-30 | Mitsubishi Electric Corp | 帯域溶融型半導体製造装置 |
US4789771A (en) * | 1985-10-07 | 1988-12-06 | Epsilon Limited Partnership | Method and apparatus for substrate heating in an axially symmetric epitaxial deposition apparatus |
US4859832A (en) * | 1986-09-08 | 1989-08-22 | Nikon Corporation | Light radiation apparatus |
FR2620519B1 (fr) * | 1987-09-14 | 1990-01-19 | Lefevere Jules | Appareil de chauffage electrique |
EP0511294B1 (en) * | 1990-01-19 | 1996-04-03 | Applied Materials, Inc. | Heating apparatus for semiconductor wafers or substrates |
-
1991
- 1991-01-18 EP EP91903497A patent/EP0511294B1/en not_active Expired - Lifetime
- 1991-01-18 EP EP00115919A patent/EP1049356A3/en not_active Withdrawn
- 1991-01-18 WO PCT/US1991/000266 patent/WO1991010873A1/en active IP Right Grant
- 1991-01-18 EP EP95112517A patent/EP0695922B1/en not_active Expired - Lifetime
- 1991-01-18 DE DE69118513T patent/DE69118513T2/de not_active Expired - Fee Related
- 1991-01-18 DE DE69132826T patent/DE69132826T2/de not_active Expired - Fee Related
- 1991-01-18 KR KR1019920701680A patent/KR100194267B1/ko not_active IP Right Cessation
- 1991-01-18 JP JP3503582A patent/JPH0693440B2/ja not_active Expired - Lifetime
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000068223A (ja) * | 1998-08-17 | 2000-03-03 | Eaton Corp | 放射加熱装置及びその方法 |
JP2000161866A (ja) * | 1998-11-20 | 2000-06-16 | General Electric Co <Ge> | 雰囲気制御された加工品加熱チャンバ |
JP2002530883A (ja) * | 1998-11-20 | 2002-09-17 | ステアーグ アール ティ ピー システムズ インコーポレイテッド | 半導体ウェハのための急速加熱及び冷却装置 |
JP4519227B2 (ja) * | 1998-11-20 | 2010-08-04 | ゼネラル・エレクトリック・カンパニイ | 雰囲気制御された加工品加熱チャンバ |
JP2005520329A (ja) * | 2002-03-04 | 2005-07-07 | アプライド マテリアルズ インコーポレイテッド | ランプ分割ゾーン制御のためのシステムおよび方法 |
JP2011505707A (ja) * | 2007-12-03 | 2011-02-24 | アジア パシフィック システムズ インコーポレイテッド | 急速熱処理装置のヒータブロック |
WO2011021549A1 (ja) * | 2009-08-18 | 2011-02-24 | 東京エレクトロン株式会社 | 熱処理装置 |
CN102414800A (zh) * | 2009-08-18 | 2012-04-11 | 东京毅力科创株式会社 | 热处理装置 |
JPWO2011021549A1 (ja) * | 2009-08-18 | 2013-01-24 | 東京エレクトロン株式会社 | 熱処理装置 |
Also Published As
Publication number | Publication date |
---|---|
KR920704080A (ko) | 1992-12-19 |
WO1991010873A1 (en) | 1991-07-25 |
EP0695922B1 (en) | 2001-11-21 |
DE69132826D1 (de) | 2002-01-03 |
EP0511294A4 (en) | 1993-09-15 |
JPH0693440B2 (ja) | 1994-11-16 |
EP0695922A1 (en) | 1996-02-07 |
DE69118513T2 (de) | 1996-10-02 |
KR100194267B1 (ko) | 1999-06-15 |
EP0511294A1 (en) | 1992-11-04 |
EP1049356A3 (en) | 2001-03-28 |
DE69118513D1 (de) | 1996-05-09 |
EP0511294B1 (en) | 1996-04-03 |
DE69132826T2 (de) | 2002-08-22 |
EP1049356A2 (en) | 2000-11-02 |
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