JP6296189B1 - 加熱装置、半導体製造装置 - Google Patents
加熱装置、半導体製造装置 Download PDFInfo
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 84
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000000758 substrate Substances 0.000 claims abstract description 136
- 238000012546 transfer Methods 0.000 claims abstract description 60
- 230000007246 mechanism Effects 0.000 claims description 23
- 238000010884 ion-beam technique Methods 0.000 description 8
- 239000007769 metal material Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 238000009826 distribution Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 206010037660 Pyrexia Diseases 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000009529 body temperature measurement Methods 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052755 nonmetal Inorganic materials 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
Abstract
Description
加熱位置と非加熱位置との間で基板を移送する移送部材と、
前記移送部材に設けられ、前記基板を支持する支持部材と、
加熱位置に設けられ、前記基板の一面を加熱する加熱器と、
前記基板の他面と対向し、前記移送部材に取り付けられた熱反射板を備えている。
前記熱反射板は、前記支持部材と前記移送部材との間で保持されているのが望ましい。
前記加熱位置で、前記支持部材から前記加熱器に前記基板を移送し、前記基板を前記支持部材よりも前記熱反射板側に位置させる移送機構を備えていることが望ましい。
前記熱反射板が、前記基板側に向けて凹形状をしていることが望ましい。
前記熱反射板には開口が形成されていることが望ましい。
前記加熱器が、前記基板を前記加熱器上に固定支持する機械式、静電式あるいは真空式の固定支持具を備えていてもよい。
図示される移送機構Mは、旋回により基板Wの移送を行う移送機構Mで、
回転軸11周りにモーター等の駆動源12によって一端が回動する長板状の移送部材10と、
移送部材10の他端に設けられていて、基板Wの外周端部を支持する支持部材1と、
支持部材1に支持された基板Wと対向する熱反射板2を備えている。
基板Wを加熱器4に移送させた後の加熱工程では、図1、図2の構成例と比べて、加熱器4と熱反射板2との距離が近づくことから、加熱効率がさらに向上する。
また、これとは別に、加熱器4に基板Wを移送する前に基板Wの加熱を行うようにしてもよい。具体的には、基板Wの加熱器4への移送前に、基板Wから加熱器4が離間している状態で、一旦、加熱器4で基板Wを加熱する。その後、基板温度が所定温度となった後で加熱器4へ基板Wを移送させ、基板Wをさらに加熱して目標温度にする2段階での加熱方法を採用してもよい。
このような2段階での加熱方法であれば、基板裏面の支持面積が少ない支持部材1に基板Wが支持されているときに、基板Wの熱変形に伴う熱ストレスをある程度開放することができる。よって、基板裏面の支持面積が大きい加熱器4上で全ての熱ストレスを開放する場合に比べて、基板裏面の擦れによる傷つきや基板割れのリスクを低減することができる。
このことを一般的に言えば、第二移送機構M2は、加熱位置HPで、加熱器4と移送部材10とを近づけて、支持部材1から加熱器4に基板Wを移送して、基板Wを支持部材1よりも熱反射板2側に位置させる機構であればよい。
図5(A)は、加熱位置HPにある移送部材10を上方からみたときの平面図である。図5(B)は、図5(A)に一点鎖線で記載のV−V線で、Z方向に沿って図5(A)に示す構成例を切断したときの断面図である。
このような熱反射板2を用いることで、図示される矢印のように、非加熱面から放散された熱をより効果的に基板側に反射することができる。
なお、凹形状の例としては、上記した形状に限られない。例えば、漸次拡開する内壁面が非線形的に変化するものであってもよい。
加熱器4による基板Wの非加熱時、常温状態で熱歪みのない基板Wを700Vの吸着電圧で静電チャックEにより加熱器4上に吸着させたときの基板Wと静電チャックEとの間の静電容量の値が、図8に示す80%の静電容量に相当している。静電容量が80%に近いとき、基板Wの熱歪が十分に緩和され、基板Wを加熱器4上に安定して強固に固定支持することが可能な状態になったと判断して、次の工程(静電チャックによる基板の固定支持)に進むことが出来る。
また、金属材料の基板との対向面や表面全体を非金属材料でコーティングすることで、金属材料の基板への混入を防止するようにしてもよい。この場合、非金属材料は熱を透過する材料で、金属材料は熱を反射する材料を用いる。
基板面のほぼ全体にわたり、熱反射効果が得られるようにするには、熱反射板2の外形は、基板Wと同径かこれよりも大きいものであればいいが、本発明の構成はこれに限られない。熱反射板2の外形が基板Wよりも小さいものであっても、基板Wの非加熱面から放出された熱を基板側に反射する構成であれば、本発明の効果を奏することができる。
1 支持部材
2 熱反射板
3 開口
4 加熱器
10 移送部材
20 加熱装置
HP 加熱位置
NH 非加熱位置
Claims (6)
- 基板を移送する移送部材と、
前記移送部材に設けられ、前記基板を支持する支持部材と、
前記基板の一面を加熱する加熱器と、
前記基板の他面と対向し、前記移送部材に取り付けられた熱反射板を備え、
前記熱反射板が、前記基板側に向けて凹形状をした加熱装置。 - 前記熱反射板は、前記支持部材と前記移送部材との間で保持されている請求項1記載の加熱装置。
- 前記支持部材から前記加熱器に前記基板を移送し、前記基板を前記支持部材よりも前記熱反射板側に位置させる移送機構を備えた請求項1または2記載の加熱装置。
- 前記熱反射板には開口が形成されている請求項1乃至3のいずれか一項に記載の加熱装置。
- 前記加熱器が、前記基板を前記加熱器上に固定支持する機械式、静電式あるいは真空式の固定支持手段を備えている請求項1乃至4のいずれか一項に記載の加熱装置。
- 請求項5に記載の加熱装置を備え、
前記加熱器に固定支持された前記基板に半導体製造プロセスを施す半導体製造装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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CN201710461434.5A CN108022857A (zh) | 2016-10-31 | 2017-06-16 | 加热装置、半导体制造装置 |
US15/678,296 US10916457B2 (en) | 2016-10-31 | 2017-08-16 | Heating device and semiconductor manufacturing apparatus |
US16/931,563 US11621180B2 (en) | 2016-10-31 | 2020-07-17 | Heating device |
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JP2016212481 | 2016-10-31 | ||
JP2016212481 | 2016-10-31 |
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JP6296189B1 true JP6296189B1 (ja) | 2018-03-20 |
JP2018078266A JP2018078266A (ja) | 2018-05-17 |
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US (1) | US10916457B2 (ja) |
JP (1) | JP6296189B1 (ja) |
CN (1) | CN108022857A (ja) |
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US11621180B2 (en) * | 2016-10-31 | 2023-04-04 | Nissin Ion Equipment Co., Ltd. | Heating device |
US11574888B2 (en) * | 2017-12-15 | 2023-02-07 | Panasonic Intellectual Property Management Co., Ltd. | Component joining apparatus, component joining method and mounted structure |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06204316A (ja) * | 1992-12-28 | 1994-07-22 | Mitsubishi Electric Corp | 耐熱ロボットハンド |
JPH10284569A (ja) * | 1997-04-08 | 1998-10-23 | Toshiba Mach Co Ltd | ウエハ搬送装置 |
JP2013535833A (ja) * | 2010-07-28 | 2013-09-12 | クックジェ エレクトリック コリア カンパニー リミテッド | 基板サセプタ及びそれを有する蒸着装置 |
JP2015154045A (ja) * | 2014-02-19 | 2015-08-24 | 住友電気工業株式会社 | 半導体装置の製造方法 |
JP2015211201A (ja) * | 2014-04-30 | 2015-11-24 | 株式会社Screenホールディングス | 基板処理装置 |
Family Cites Families (9)
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US5376213A (en) * | 1992-07-28 | 1994-12-27 | Tokyo Electron Limited | Plasma processing apparatus |
US6021152A (en) * | 1997-07-11 | 2000-02-01 | Asm America, Inc. | Reflective surface for CVD reactor walls |
JP4054159B2 (ja) * | 2000-03-08 | 2008-02-27 | 東京エレクトロン株式会社 | 基板処理方法及びその装置 |
US6765178B2 (en) * | 2000-12-29 | 2004-07-20 | Applied Materials, Inc. | Chamber for uniform substrate heating |
US7589950B2 (en) * | 2006-10-13 | 2009-09-15 | Applied Materials, Inc. | Detachable electrostatic chuck having sealing assembly |
US8294068B2 (en) * | 2008-09-10 | 2012-10-23 | Applied Materials, Inc. | Rapid thermal processing lamphead with improved cooling |
US8582963B2 (en) * | 2011-06-03 | 2013-11-12 | Applied Materials, Inc. | Detection of substrate warping during rapid thermal processing |
JP2015015330A (ja) * | 2013-07-04 | 2015-01-22 | 日新イオン機器株式会社 | 半導体製造装置 |
US9541836B2 (en) * | 2014-02-10 | 2017-01-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and apparatus for baking photoresist patterns |
-
2017
- 2017-03-24 JP JP2017060206A patent/JP6296189B1/ja active Active
- 2017-06-16 CN CN201710461434.5A patent/CN108022857A/zh active Pending
- 2017-08-16 US US15/678,296 patent/US10916457B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06204316A (ja) * | 1992-12-28 | 1994-07-22 | Mitsubishi Electric Corp | 耐熱ロボットハンド |
JPH10284569A (ja) * | 1997-04-08 | 1998-10-23 | Toshiba Mach Co Ltd | ウエハ搬送装置 |
JP2013535833A (ja) * | 2010-07-28 | 2013-09-12 | クックジェ エレクトリック コリア カンパニー リミテッド | 基板サセプタ及びそれを有する蒸着装置 |
JP2015154045A (ja) * | 2014-02-19 | 2015-08-24 | 住友電気工業株式会社 | 半導体装置の製造方法 |
JP2015211201A (ja) * | 2014-04-30 | 2015-11-24 | 株式会社Screenホールディングス | 基板処理装置 |
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US10916457B2 (en) | 2021-02-09 |
JP2018078266A (ja) | 2018-05-17 |
CN108022857A (zh) | 2018-05-11 |
US20180122661A1 (en) | 2018-05-03 |
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