JP5357689B2 - 触媒cvd装置、膜の形成方法、太陽電池の製造方法及び基材の保持体 - Google Patents
触媒cvd装置、膜の形成方法、太陽電池の製造方法及び基材の保持体 Download PDFInfo
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- 238000010586 diagram Methods 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
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- 238000005229 chemical vapour deposition Methods 0.000 description 3
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Description
以下において、本実施形態に用いる触媒CVD装置の構成について、図面を参照しながら説明する。図1は、触媒CVD装置100の構成を示す概略図である。触媒CVD装置100は、反応室内に設置され加熱した触媒線に原料ガスを供給し、生成された分解種を反応室内において保持体に保持された被成膜基材上に堆積させて成膜を行う装置である。図1に示すように、触媒CVD装置100は、反応室10、ガス供給管20及びガス排出管30を備える。
次に、保持体300の構成について、図2を参照しながら説明する。図2は、反応室10内に配置された保持体300の側面図である。
本実施形態に係る触媒CVD装置100において、保持体300は、触媒線11から放出される輻射線の基体部310による基材200側への反射を防止するための反射防止構造としての反射防止膜320を有する。
本発明は上述した実施形態によって説明したが、この開示の一部をなす論述及び図面は、この発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施形態、実施例及び運用技術が明らかとなろう。
(1)実施例1
実施例1に係る保持体として、平面状の保持面と、触媒CVD法によって保持面上に形成された約2μm厚のアモルファスシリコン層とを有するアルミニウム板を準備した。
実施例2に係る保持体として、凹凸構造が形成された保持面と、触媒CVD法によって保持面上に形成された約2μm厚のアモルファスシリコン層とを有するアルミニウム板を準備した。
実施例3に係る保持体として、平面状の保持面と、触媒CVD法によって保持面上に形成された約1μm厚のアモルファスシリコン層とを有するアルミニウム板を準備した。
比較例に係る保持体として、平面状の保持面を有するアルミニウム板を準備した。
(1)実験1
まず、実施例1及び比較例それぞれの保持体に基材としてシリコン板を保持した。
まず、実施例2、比較例及び実施例3それぞれの保持体に基材としてシリコン板を保持した。
11…触媒線
12…取付け部
13…端子
20…ガス供給管
30…ガス排出管
100…触媒CVD装置
200…基材
200A…第1主面
200B…第2主面
300…保持体
300S…保持面
310…基体部
320…反射防止膜
330…保持構造
400…保持体
400S…保持面
410…基体部
420…反射防止膜
Claims (9)
- 反応室内に設置され加熱した触媒線に原料ガスを供給し、生成された分解種を前記反応室内において保持体に保持された被成膜基材上に堆積させて成膜を行う触媒CVD装置であって、
前記保持体は、前記触媒線から放出される輻射線の反射を防止するための反射防止構造を有し、
前記反射防止構造は、1.5μm〜3μmの厚みを有する反射防止膜を含む
ことを特徴とする触媒CVD装置。 - 前記反射防止膜は、シリコン含有膜を含む
ことを特徴とする請求項1に記載の触媒CVD装置。 - 前記シリコン含有膜は、非晶質構造及び結晶構造の少なくともいずれか一方の構造を有する
ことを特徴とする請求項2に記載の触媒CVD装置。 - 前記反射防止膜は、混晶膜を含む
ことを特徴とする請求項1に記載の触媒CVD装置。 - 前記反射防止構造は、前記被成膜基材に対向するように設けられた凹凸構造を有する
ことを特徴とする請求項1乃至3のいずれかに記載の触媒CVD装置。 - 反応室内に設置され加熱した触媒線に原料ガスを供給し、生成された分解種を前記反応室内において保持体に保持された被成膜基材上に堆積させて成膜を行う触媒CVD装置であって、
前記保持体は、前記被成膜基材を保持する保持面上に形成されたシリコン含有膜を有し、
前記シリコン含有膜は、1.5μm〜3μmの厚みを有する
ことを特徴とする触媒CVD装置。 - 被成膜基材上に膜を堆積させて成膜を行う工程を含む膜の形成方法であって、請求項1乃至5のいずれかに記載の触媒CVD装置を用いて前記膜の成膜を行う
ことを特徴とする膜の形成方法。 - 被成膜基材上に膜を堆積させて成膜を行う工程を含む太陽電池の製造方法であって、請求項1乃至5のいずれかに記載の触媒CVD装置を用いて前記膜の成膜を行う
ことを特徴とする太陽電池の製造方法。 - 反応室内に設置され加熱した触媒線に原料ガスを供給し、生成された分解種を前記反応室内において保持体に保持された被成膜基材上に堆積させて成膜を行うための基材の保持体であって、
前記保持体は、前記触媒線から放出される輻射線の反射を防止するための反射防止構造を有し、
前記反射防止構造は、1.5μm〜3μmの厚みを有する反射防止膜を含む
ことを特徴とする基材の保持体。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009230589A JP5357689B2 (ja) | 2009-10-02 | 2009-10-02 | 触媒cvd装置、膜の形成方法、太陽電池の製造方法及び基材の保持体 |
EP10820724.2A EP2484804B1 (en) | 2009-10-02 | 2010-10-01 | Catalytic cvd device, method for formation of film, process for production of solar cell, and substrate holder |
KR1020127011213A KR101462321B1 (ko) | 2009-10-02 | 2010-10-01 | 촉매 cvd 장치, 막의 형성 방법, 태양 전지의 제조 방법 및 기재의 유지체 |
CN201080044569.8A CN102575343B (zh) | 2009-10-02 | 2010-10-01 | 催化cvd装置、膜的形成方法、太阳能电池的制造方法和基材的保持体 |
PCT/JP2010/067285 WO2011040610A1 (ja) | 2009-10-02 | 2010-10-01 | 触媒cvd装置、膜の形成方法、太陽電池の製造方法及び基材の保持体 |
US13/435,646 US8957351B2 (en) | 2009-10-02 | 2012-03-30 | Catalytic CVD equipment, method for formation of film, process for production of solar cell, and substrate holder |
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