DE69027960D1 - Elektronen emittierendes Element und Verfahren zur Herstellung desselben - Google Patents

Elektronen emittierendes Element und Verfahren zur Herstellung desselben

Info

Publication number
DE69027960D1
DE69027960D1 DE69027960T DE69027960T DE69027960D1 DE 69027960 D1 DE69027960 D1 DE 69027960D1 DE 69027960 T DE69027960 T DE 69027960T DE 69027960 T DE69027960 T DE 69027960T DE 69027960 D1 DE69027960 D1 DE 69027960D1
Authority
DE
Germany
Prior art keywords
manufacturing
same
emitting element
electron emitting
electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69027960T
Other languages
English (en)
Other versions
DE69027960T2 (de
Inventor
Takeo Tsukamoto
Nobuo Watanabe
Toshihiko Takeda
Masahiko Okunuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP22908489A external-priority patent/JP2774155B2/ja
Priority claimed from JP23393289A external-priority patent/JP2726116B2/ja
Priority claimed from JP23393189A external-priority patent/JP2765982B2/ja
Priority claimed from JP26757689A external-priority patent/JP2733112B2/ja
Priority claimed from JP1267577A external-priority patent/JPH03129632A/ja
Priority claimed from JP26757989A external-priority patent/JP2765998B2/ja
Priority claimed from JP1267578A external-priority patent/JPH03129633A/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE69027960D1 publication Critical patent/DE69027960D1/de
Application granted granted Critical
Publication of DE69027960T2 publication Critical patent/DE69027960T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Electrodes Of Semiconductors (AREA)
DE69027960T 1989-09-04 1990-09-04 Elektronen emittierendes Element und Verfahren zur Herstellung desselben Expired - Fee Related DE69027960T2 (de)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP22908489A JP2774155B2 (ja) 1989-09-04 1989-09-04 電子放出素子
JP23393189A JP2765982B2 (ja) 1989-09-07 1989-09-07 半導体電子放出素子およびその製造方法
JP23393289A JP2726116B2 (ja) 1989-09-07 1989-09-07 半導体電子放出素子およびその製造方法
JP1267577A JPH03129632A (ja) 1989-10-13 1989-10-13 電子放出素子
JP26757989A JP2765998B2 (ja) 1989-10-13 1989-10-13 電子放出素子の製造方法
JP26757689A JP2733112B2 (ja) 1989-10-13 1989-10-13 電子放出素子
JP1267578A JPH03129633A (ja) 1989-10-13 1989-10-13 電子放出素子

Publications (2)

Publication Number Publication Date
DE69027960D1 true DE69027960D1 (de) 1996-09-05
DE69027960T2 DE69027960T2 (de) 1997-01-09

Family

ID=27566633

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69033677T Expired - Fee Related DE69033677T2 (de) 1989-09-04 1990-09-04 Elektronenemissionselement- und Herstellungsverfahren desselben
DE69027960T Expired - Fee Related DE69027960T2 (de) 1989-09-04 1990-09-04 Elektronen emittierendes Element und Verfahren zur Herstellung desselben

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69033677T Expired - Fee Related DE69033677T2 (de) 1989-09-04 1990-09-04 Elektronenemissionselement- und Herstellungsverfahren desselben

Country Status (3)

Country Link
US (1) US5554859A (de)
EP (2) EP0416558B1 (de)
DE (2) DE69033677T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5145438A (en) * 1991-07-15 1992-09-08 Xerox Corporation Method of manufacturing a planar microelectronic device
DE69223707T2 (de) * 1991-09-13 1998-05-20 Canon Kk Halbleiter-Elektronenemittierende Einrichtung
KR100442982B1 (ko) * 1996-04-15 2004-09-18 마츠시타 덴끼 산교 가부시키가이샤 전계방출형전자원및그제조방법
DE69911012T2 (de) 1998-06-11 2004-06-17 Petr Viscor Flacher elektronenemitter
US6366266B1 (en) 1999-09-02 2002-04-02 Micron Technology, Inc. Method and apparatus for programmable field emission display
US6903433B1 (en) * 2000-01-19 2005-06-07 Adrena, Inc. Chemical sensor using chemically induced electron-hole production at a schottky barrier
US7274082B2 (en) * 2000-01-19 2007-09-25 Adrena, Inc. Chemical sensor using chemically induced electron-hole production at a schottky barrier
US6781146B2 (en) 2001-04-30 2004-08-24 Hewlett-Packard Development Company, L.P. Annealed tunneling emitter
US6882100B2 (en) * 2001-04-30 2005-04-19 Hewlett-Packard Development Company, L.P. Dielectric light device
US6753544B2 (en) 2001-04-30 2004-06-22 Hewlett-Packard Development Company, L.P. Silicon-based dielectric tunneling emitter
US6911768B2 (en) 2001-04-30 2005-06-28 Hewlett-Packard Development Company, L.P. Tunneling emitter with nanohole openings
US6900483B2 (en) * 2001-06-04 2005-05-31 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for manufacturing the same
US6558968B1 (en) 2001-10-31 2003-05-06 Hewlett-Packard Development Company Method of making an emitter with variable density photoresist layer
US6835947B2 (en) * 2002-01-31 2004-12-28 Hewlett-Packard Development Company, L.P. Emitter and method of making
US20050186690A1 (en) * 2004-02-25 2005-08-25 Megic Corporation Method for improving semiconductor wafer test accuracy
EP3066680B1 (de) * 2013-11-07 2018-12-12 HIRSCH, Gregory Helle und dauerhafte feldemissionsquelle aus feuerfesten taylor-kegeln
US9837239B2 (en) 2013-11-07 2017-12-05 Gregory Hirsch Techniques for optimizing nanotips derived from frozen taylor cones
US10943760B2 (en) * 2018-10-12 2021-03-09 Kla Corporation Electron gun and electron microscope

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL184549C (nl) * 1978-01-27 1989-08-16 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenstroom en weergeefinrichting voorzien van een dergelijke halfgeleiderinrichting.
DE2951741C2 (de) * 1978-12-29 1984-05-30 Mitsubishi Denki K.K., Tokio/Tokyo Elektrode für eine Entladungslampe
NL184589C (nl) * 1979-07-13 1989-09-01 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenbundel en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting.
US4303848A (en) * 1979-08-29 1981-12-01 Toshiba Corporation Discharge lamp and method of making same
US4478881A (en) * 1981-12-28 1984-10-23 Solid State Devices, Inc. Tungsten barrier contact
JPS6057173A (ja) * 1983-09-06 1985-04-02 松下冷機株式会社 冷蔵庫
NL8400297A (nl) * 1984-02-01 1985-09-02 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenbundel.
NL8600675A (nl) * 1986-03-17 1987-10-16 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenstroom.
US4810934A (en) * 1986-05-20 1989-03-07 Canon Kabushiki Kaisha Electron emission device
US4906894A (en) * 1986-06-19 1990-03-06 Canon Kabushiki Kaisha Photoelectron beam converting device and method of driving the same
JPS63950A (ja) * 1986-06-19 1988-01-05 Canon Inc 電子放出装置
DE3751781T2 (de) * 1986-08-12 1996-10-17 Canon Kk Festkörper-Elektronenstrahlerzeuger
EP0278405B1 (de) * 1987-02-06 1996-08-21 Canon Kabushiki Kaisha Elektronen emittierendes Element und dessen Herstellungsverfahren
JP2612572B2 (ja) * 1987-04-14 1997-05-21 キヤノン株式会社 電子放出素子
US4904895A (en) * 1987-05-06 1990-02-27 Canon Kabushiki Kaisha Electron emission device
US4956578A (en) * 1987-07-28 1990-09-11 Canon Kabushiki Kaisha Surface conduction electron-emitting device
JPH01124926A (ja) * 1987-11-10 1989-05-17 Futaba Corp 酸化物陰極
JP2788243B2 (ja) * 1988-02-27 1998-08-20 キヤノン株式会社 半導体電子放出素子及び半導体電子放出装置
US5285079A (en) * 1990-03-16 1994-02-08 Canon Kabushiki Kaisha Electron emitting device, electron emitting apparatus and electron beam drawing apparatus
US5138220A (en) * 1990-12-05 1992-08-11 Science Applications International Corporation Field emission cathode of bio-molecular or semiconductor-metal eutectic composite microstructures

Also Published As

Publication number Publication date
DE69033677D1 (de) 2001-02-01
EP0713237A1 (de) 1996-05-22
DE69033677T2 (de) 2001-05-23
EP0416558A3 (en) 1991-05-29
US5554859A (en) 1996-09-10
EP0416558A2 (de) 1991-03-13
EP0416558B1 (de) 1996-07-31
DE69027960T2 (de) 1997-01-09
EP0713237B1 (de) 2000-12-27

Similar Documents

Publication Publication Date Title
DE69120864D1 (de) Eingekapselter elektrolumineszenter Phosphor und Verfahren zur Herstellung desselben
DE69026353D1 (de) Feldemissionsvorrichtung und Verfahren zur Herstellung derselben
DE69032451D1 (de) Halbleiterlaser und Verfahren zur Herstellung desselben
DE68926986D1 (de) Halbleiterlaser und Verfahren zur Herstellung desselben
DE69327483D1 (de) Diode und Verfahren zur Herstellung
DE69316810T2 (de) SiGe-SOI-MOSFET und Verfahren zur Herstellung
DE69220719T2 (de) Handschuhe und Verfahren zur Herstellung
DE69027368D1 (de) Halbleiterlaser und Verfahren zur Herstellung desselben
DE69326373T2 (de) Elektrokatalysator und Verfahren zur Herstellung
DE69300528D1 (de) Mikropumpe und Verfahren zur Herstellung.
DE69027960D1 (de) Elektronen emittierendes Element und Verfahren zur Herstellung desselben
DE59401845D1 (de) Rotor und Verfahren zur Herstellung desselben
DE69323827T2 (de) Diamant-Halbleiter und Verfahren zur Herstellung
DE69431023D1 (de) Halbleiteraufbau und Verfahren zur Herstellung
DE69016979D1 (de) Hochspannungshalbleiterelement mit einer Sensorelektrode und Verfahren zur Herstellung.
DE69220591D1 (de) Enzymbiosensor und Verfahren zur Herstellung desselben
DE69014483D1 (de) Elektrolumineszentes Wechselstrom-Pulvertyppaneel und Verfahren zur Herstellung desselben.
DE69014454D1 (de) Hochspannungs-Halbleiteranordnung und Verfahren zur Herstellung.
DE59002992D1 (de) Hotelkanne und Verfahren zur Herstellung derselben.
DE69202634D1 (de) Feldemissionsvorrichtung und Verfahren zur Herstellung.
DE69123642D1 (de) MESFET und Verfahren zur Herstellung
DE69404348D1 (de) Kathodenvorrichtung und Verfahren zur Herstellung derselben
DE69128406T2 (de) Lateraler MOSFET und Verfahren zur Herstellung
DE68917784D1 (de) Leitfähiges zusammengesetztes Filament und Verfahren zur Herstellung desselben.
DE69008079T3 (de) Reibungsmaterial und Verfahren zur Herstellung desselben.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee