DE69016979D1 - Hochspannungshalbleiterelement mit einer Sensorelektrode und Verfahren zur Herstellung. - Google Patents

Hochspannungshalbleiterelement mit einer Sensorelektrode und Verfahren zur Herstellung.

Info

Publication number
DE69016979D1
DE69016979D1 DE69016979T DE69016979T DE69016979D1 DE 69016979 D1 DE69016979 D1 DE 69016979D1 DE 69016979 T DE69016979 T DE 69016979T DE 69016979 T DE69016979 T DE 69016979T DE 69016979 D1 DE69016979 D1 DE 69016979D1
Authority
DE
Germany
Prior art keywords
manufacture
semiconductor element
sensor electrode
voltage semiconductor
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69016979T
Other languages
English (en)
Other versions
DE69016979T2 (de
Inventor
Takishi Kida
Kazumasa Satsuma
Gourab Majumdar
Tomohide Terashima
Hiroshi Yamaguchi
Masanori Fukunaga
Masao Yoshizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE69016979D1 publication Critical patent/DE69016979D1/de
Application granted granted Critical
Publication of DE69016979T2 publication Critical patent/DE69016979T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/404—Multiple field plate structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66681—Lateral DMOS transistors, i.e. LDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/735—Lateral transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H01L29/745—Gate-turn-off devices with turn-off by field effect
    • H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H01L29/7826—Lateral DMOS transistors, i.e. LDMOS transistors with voltage or current sensing structure, e.g. emulator section, overcurrent sensing cell
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8611—Planar PN junction diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
DE69016979T 1989-12-28 1990-10-02 Hochspannungshalbleiterelement mit einer Sensorelektrode und Verfahren zur Herstellung. Expired - Lifetime DE69016979T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1340202A JP2513874B2 (ja) 1989-12-28 1989-12-28 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
DE69016979D1 true DE69016979D1 (de) 1995-03-23
DE69016979T2 DE69016979T2 (de) 1995-06-22

Family

ID=18334685

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69016979T Expired - Lifetime DE69016979T2 (de) 1989-12-28 1990-10-02 Hochspannungshalbleiterelement mit einer Sensorelektrode und Verfahren zur Herstellung.

Country Status (4)

Country Link
US (2) US5200638A (de)
EP (1) EP0434914B1 (de)
JP (1) JP2513874B2 (de)
DE (1) DE69016979T2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5258641A (en) * 1989-12-28 1993-11-02 Mitsubishi Denki Kabushiki Kaisha Semiconductor device for extracting a signal used to monitor potential of a high voltage island at a low voltage island and method of manufacturing the same
JP3216206B2 (ja) * 1992-03-30 2001-10-09 株式会社デンソー 半導体装置及びその製造方法
KR0127282B1 (ko) * 1992-05-18 1998-04-02 도요다 요시또시 반도체 장치
JP3158738B2 (ja) * 1992-08-17 2001-04-23 富士電機株式会社 高耐圧ｍｉｓ電界効果トランジスタおよび半導体集積回路
JP2908948B2 (ja) * 1992-12-10 1999-06-23 三菱電機株式会社 パワーデバイスの制御回路及び半導体集積回路装置
DE4244272A1 (de) * 1992-12-28 1994-06-30 Daimler Benz Ag Feldeffektgesteuertes Halbleiterbauelement
JPH06244430A (ja) * 1993-02-16 1994-09-02 Fuji Electric Co Ltd 半導体装置
JP2850694B2 (ja) * 1993-03-10 1999-01-27 株式会社日立製作所 高耐圧プレーナ型半導体装置
US5981981A (en) * 1993-10-13 1999-11-09 Mitsubishi Denki Kabushiki Kaisha Semiconductor device including a bipolar structure
JP3325697B2 (ja) * 1994-01-20 2002-09-17 三菱電機株式会社 パワーデバイスの制御装置およびモータの駆動制御装置
JP3575908B2 (ja) * 1996-03-28 2004-10-13 株式会社東芝 半導体装置
DE19828669C2 (de) * 1998-06-26 2003-08-21 Infineon Technologies Ag Lateraler IGBT in SOI-Bauweise und Verfahren zur Herstellung
US6236100B1 (en) * 2000-01-28 2001-05-22 General Electronics Applications, Inc. Semiconductor with high-voltage components and low-voltage components on a shared die
DE10006519B4 (de) * 2000-02-15 2004-03-11 Infineon Technologies Ag MOSFET-Treibertransistor und Verfahren zum Herstellen desselben
DE10325588A1 (de) * 2002-06-06 2003-12-18 Int Rectifier Corp Integrierte MOS-Gate-Treiberschaltung mit adaptiver Totzeit
US6888177B1 (en) * 2002-09-24 2005-05-03 T-Ram, Inc. Increased base-emitter capacitance
JP4440040B2 (ja) * 2004-08-27 2010-03-24 三菱電機株式会社 半導体装置
US7135740B2 (en) 2004-09-27 2006-11-14 Teledyne Licensing, Llc High voltage FET switch with conductivity modulation
US8020138B2 (en) * 2008-06-02 2011-09-13 International Business Machines Corporation Voltage island performance/leakage screen monitor for IP characterization
US8618627B2 (en) 2010-06-24 2013-12-31 Fairchild Semiconductor Corporation Shielded level shift transistor
GB2520617B (en) * 2013-10-22 2020-12-30 Abb Schweiz Ag RC-IGBT with freewheeling SiC diode
WO2018112267A1 (en) * 2016-12-16 2018-06-21 Tesoro Scientific, Inc. Light emitting diode (led) test apparatus and method of manufacture
CN111370492B (zh) * 2020-04-27 2023-04-28 上海华虹宏力半导体制造有限公司 集成采样功能的超高压ldmos复合管及工艺方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3463977A (en) * 1966-04-21 1969-08-26 Fairchild Camera Instr Co Optimized double-ring semiconductor device
IT1085486B (it) * 1977-05-30 1985-05-28 Ates Componenti Elettron Struttura a semiconduttore integrata monolitica con giunzioni planari schermate da campi elettrostatici esterni
JPS56110264A (en) * 1980-02-04 1981-09-01 Oki Electric Ind Co Ltd High withstand voltage mos transistor
JPS57160159A (en) * 1981-03-28 1982-10-02 Toshiba Corp High breakdown voltage planar type semiconductor device
JPS5976466A (ja) * 1982-10-25 1984-05-01 Mitsubishi Electric Corp プレ−ナ形半導体装置
US4942440A (en) * 1982-10-25 1990-07-17 General Electric Company High voltage semiconductor devices with reduced on-resistance
US4721986A (en) * 1984-02-21 1988-01-26 International Rectifier Corporation Bidirectional output semiconductor field effect transistor and method for its maufacture
JPS60246674A (ja) * 1984-05-22 1985-12-06 Toshiba Corp 半導体装置
US4713681A (en) * 1985-05-31 1987-12-15 Harris Corporation Structure for high breakdown PN diode with relatively high surface doping
JPS6265517A (ja) * 1985-09-17 1987-03-24 Fuji Electric Co Ltd 金属酸化半導体電界効果トランジスタの過負荷保護方式
US4963951A (en) * 1985-11-29 1990-10-16 General Electric Company Lateral insulated gate bipolar transistors with improved latch-up immunity
US4933740A (en) * 1986-11-26 1990-06-12 General Electric Company Insulated gate transistor with vertical integral diode and method of fabrication
JPS63181376A (ja) * 1987-01-23 1988-07-26 Toshiba Corp 半導体装置
US4922327A (en) * 1987-12-24 1990-05-01 University Of Toronto Innovations Foundation Semiconductor LDMOS device with upper and lower passages
JP2698645B2 (ja) * 1988-05-25 1998-01-19 株式会社東芝 Ｍｏｓｆｅｔ

Also Published As

Publication number Publication date
US5279977A (en) 1994-01-18
JPH03201452A (ja) 1991-09-03
EP0434914A3 (en) 1991-09-04
DE69016979T2 (de) 1995-06-22
EP0434914A2 (de) 1991-07-03
EP0434914B1 (de) 1995-02-15
JP2513874B2 (ja) 1996-07-03
US5200638A (en) 1993-04-06

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8364 No opposition during term of opposition