DE3678624D1 - Halbleiter-lawinenphotodetektor und verfahren zur herstellung. - Google Patents

Halbleiter-lawinenphotodetektor und verfahren zur herstellung.

Info

Publication number
DE3678624D1
DE3678624D1 DE8686401300T DE3678624T DE3678624D1 DE 3678624 D1 DE3678624 D1 DE 3678624D1 DE 8686401300 T DE8686401300 T DE 8686401300T DE 3678624 T DE3678624 T DE 3678624T DE 3678624 D1 DE3678624 D1 DE 3678624D1
Authority
DE
Germany
Prior art keywords
producing
same
avalanche photodetector
semiconductor avalanche
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8686401300T
Other languages
English (en)
Inventor
Thierry Weil
Borge Vinter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Application granted granted Critical
Publication of DE3678624D1 publication Critical patent/DE3678624D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/432—Heterojunction gate for field effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
    • H01L29/151—Compositional structures
    • H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
    • H01L29/155—Comprising only semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Light Receiving Elements (AREA)
DE8686401300T 1985-06-18 1986-06-16 Halbleiter-lawinenphotodetektor und verfahren zur herstellung. Expired - Fee Related DE3678624D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8509243A FR2583577B1 (fr) 1985-06-18 1985-06-18 Procede de realisation d'un dispositif photodetecteur semi-conducteur a avalanche et dispositif ainsi realise

Publications (1)

Publication Number Publication Date
DE3678624D1 true DE3678624D1 (de) 1991-05-16

Family

ID=9320376

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686401300T Expired - Fee Related DE3678624D1 (de) 1985-06-18 1986-06-16 Halbleiter-lawinenphotodetektor und verfahren zur herstellung.

Country Status (5)

Country Link
US (1) US4722907A (de)
EP (1) EP0206918B1 (de)
JP (1) JPS61294879A (de)
DE (1) DE3678624D1 (de)
FR (1) FR2583577B1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4865923A (en) * 1986-10-09 1989-09-12 Amoco Corporation Selective intermixing of layered structures composed of thin solid films
JP2508023B2 (ja) * 1986-10-13 1996-06-19 日本電気株式会社 半導体受光素子の製造方法
JPH01144687A (ja) * 1987-11-30 1989-06-06 Nec Corp 半導体受光素子
US5121181A (en) * 1989-01-31 1992-06-09 International Business Machines Corporation Resonant tunneling photodetector for long wavelength applications
JPH081949B2 (ja) * 1989-05-30 1996-01-10 三菱電機株式会社 赤外線撮像装置及びその製造方法
US5094224A (en) * 1991-02-26 1992-03-10 Inter-City Products Corporation (Usa) Enhanced tubular heat exchanger
FR2684807B1 (fr) * 1991-12-10 2004-06-11 Thomson Csf Transistor a puits quantique a effet tunnel resonnant.
JP2845081B2 (ja) * 1993-04-07 1999-01-13 日本電気株式会社 半導体受光素子
US20100091806A1 (en) * 2008-10-10 2010-04-15 Pavilion Integration Corporation Semiconductor Lasers with Improved Temporal, Spectral, and Spatial Stability and Beam Profile Uniformity
CN106784054A (zh) * 2017-03-06 2017-05-31 北京世纪金光半导体有限公司 一种紫外雪崩光电二极管探测器及其探测方法
US10854768B2 (en) * 2018-12-20 2020-12-01 Hewlett Packard Enterprise Development Lp Optoelectronic component with current deflected to high-gain paths comprising an avalanche photodiode having an absorbing region on a p-doped lateral boundary, an n-doped lateral boundary and an amplifying region

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4194935A (en) * 1978-04-24 1980-03-25 Bell Telephone Laboratories, Incorporated Method of making high mobility multilayered heterojunction devices employing modulated doping
US4250516A (en) * 1979-08-06 1981-02-10 Bell Telephone Laboratories, Incorporated Multistage avalanche photodetector
US4442444A (en) * 1980-07-08 1984-04-10 Fujitsu Limited Avalanche photodiodes
JPS5861679A (ja) * 1981-10-07 1983-04-12 Kokusai Denshin Denwa Co Ltd <Kdd> 量子井戸層付アバランシ・ホトダイオ−ド
US4486765A (en) * 1981-12-07 1984-12-04 At&T Bell Laboratories Avalanche photodetector including means for separating electrons and holes
US4476477A (en) * 1982-02-23 1984-10-09 At&T Bell Laboratories Graded bandgap multilayer avalanche photodetector with energy step backs
JPS6016474A (ja) * 1983-07-08 1985-01-28 Nec Corp ヘテロ多重接合型光検出器
JPS6028268A (ja) * 1983-07-26 1985-02-13 Agency Of Ind Science & Technol 半導体装置
US4546480A (en) * 1983-08-19 1985-10-08 Xerox Corporation Injection lasers with quantum size effect transparent waveguiding
US4620214A (en) * 1983-12-02 1986-10-28 California Institute Of Technology Multiple quantum-well infrared detector
US4591889A (en) * 1984-09-14 1986-05-27 At&T Bell Laboratories Superlattice geometry and devices

Also Published As

Publication number Publication date
US4722907A (en) 1988-02-02
FR2583577B1 (fr) 1987-08-07
EP0206918A1 (de) 1986-12-30
FR2583577A1 (fr) 1986-12-19
EP0206918B1 (de) 1991-04-10
JPS61294879A (ja) 1986-12-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee