DE3678624D1 - Halbleiter-lawinenphotodetektor und verfahren zur herstellung. - Google Patents
Halbleiter-lawinenphotodetektor und verfahren zur herstellung.Info
- Publication number
- DE3678624D1 DE3678624D1 DE8686401300T DE3678624T DE3678624D1 DE 3678624 D1 DE3678624 D1 DE 3678624D1 DE 8686401300 T DE8686401300 T DE 8686401300T DE 3678624 T DE3678624 T DE 3678624T DE 3678624 D1 DE3678624 D1 DE 3678624D1
- Authority
- DE
- Germany
- Prior art keywords
- producing
- same
- avalanche photodetector
- semiconductor avalanche
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/432—Heterojunction gate for field effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
- H01L29/151—Compositional structures
- H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
- H01L29/155—Comprising only semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8509243A FR2583577B1 (fr) | 1985-06-18 | 1985-06-18 | Procede de realisation d'un dispositif photodetecteur semi-conducteur a avalanche et dispositif ainsi realise |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3678624D1 true DE3678624D1 (de) | 1991-05-16 |
Family
ID=9320376
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8686401300T Expired - Fee Related DE3678624D1 (de) | 1985-06-18 | 1986-06-16 | Halbleiter-lawinenphotodetektor und verfahren zur herstellung. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4722907A (de) |
EP (1) | EP0206918B1 (de) |
JP (1) | JPS61294879A (de) |
DE (1) | DE3678624D1 (de) |
FR (1) | FR2583577B1 (de) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4865923A (en) * | 1986-10-09 | 1989-09-12 | Amoco Corporation | Selective intermixing of layered structures composed of thin solid films |
JP2508023B2 (ja) * | 1986-10-13 | 1996-06-19 | 日本電気株式会社 | 半導体受光素子の製造方法 |
JPH01144687A (ja) * | 1987-11-30 | 1989-06-06 | Nec Corp | 半導体受光素子 |
US5121181A (en) * | 1989-01-31 | 1992-06-09 | International Business Machines Corporation | Resonant tunneling photodetector for long wavelength applications |
JPH081949B2 (ja) * | 1989-05-30 | 1996-01-10 | 三菱電機株式会社 | 赤外線撮像装置及びその製造方法 |
US5094224A (en) * | 1991-02-26 | 1992-03-10 | Inter-City Products Corporation (Usa) | Enhanced tubular heat exchanger |
FR2684807B1 (fr) * | 1991-12-10 | 2004-06-11 | Thomson Csf | Transistor a puits quantique a effet tunnel resonnant. |
JP2845081B2 (ja) * | 1993-04-07 | 1999-01-13 | 日本電気株式会社 | 半導体受光素子 |
US20100091806A1 (en) * | 2008-10-10 | 2010-04-15 | Pavilion Integration Corporation | Semiconductor Lasers with Improved Temporal, Spectral, and Spatial Stability and Beam Profile Uniformity |
CN106784054A (zh) * | 2017-03-06 | 2017-05-31 | 北京世纪金光半导体有限公司 | 一种紫外雪崩光电二极管探测器及其探测方法 |
US10854768B2 (en) * | 2018-12-20 | 2020-12-01 | Hewlett Packard Enterprise Development Lp | Optoelectronic component with current deflected to high-gain paths comprising an avalanche photodiode having an absorbing region on a p-doped lateral boundary, an n-doped lateral boundary and an amplifying region |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4194935A (en) * | 1978-04-24 | 1980-03-25 | Bell Telephone Laboratories, Incorporated | Method of making high mobility multilayered heterojunction devices employing modulated doping |
US4250516A (en) * | 1979-08-06 | 1981-02-10 | Bell Telephone Laboratories, Incorporated | Multistage avalanche photodetector |
US4442444A (en) * | 1980-07-08 | 1984-04-10 | Fujitsu Limited | Avalanche photodiodes |
JPS5861679A (ja) * | 1981-10-07 | 1983-04-12 | Kokusai Denshin Denwa Co Ltd <Kdd> | 量子井戸層付アバランシ・ホトダイオ−ド |
US4486765A (en) * | 1981-12-07 | 1984-12-04 | At&T Bell Laboratories | Avalanche photodetector including means for separating electrons and holes |
US4476477A (en) * | 1982-02-23 | 1984-10-09 | At&T Bell Laboratories | Graded bandgap multilayer avalanche photodetector with energy step backs |
JPS6016474A (ja) * | 1983-07-08 | 1985-01-28 | Nec Corp | ヘテロ多重接合型光検出器 |
JPS6028268A (ja) * | 1983-07-26 | 1985-02-13 | Agency Of Ind Science & Technol | 半導体装置 |
US4546480A (en) * | 1983-08-19 | 1985-10-08 | Xerox Corporation | Injection lasers with quantum size effect transparent waveguiding |
US4620214A (en) * | 1983-12-02 | 1986-10-28 | California Institute Of Technology | Multiple quantum-well infrared detector |
US4591889A (en) * | 1984-09-14 | 1986-05-27 | At&T Bell Laboratories | Superlattice geometry and devices |
-
1985
- 1985-06-18 FR FR8509243A patent/FR2583577B1/fr not_active Expired
-
1986
- 1986-06-09 US US06/871,970 patent/US4722907A/en not_active Expired - Fee Related
- 1986-06-16 DE DE8686401300T patent/DE3678624D1/de not_active Expired - Fee Related
- 1986-06-16 EP EP86401300A patent/EP0206918B1/de not_active Expired - Lifetime
- 1986-06-18 JP JP61142438A patent/JPS61294879A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
US4722907A (en) | 1988-02-02 |
FR2583577B1 (fr) | 1987-08-07 |
EP0206918A1 (de) | 1986-12-30 |
FR2583577A1 (fr) | 1986-12-19 |
EP0206918B1 (de) | 1991-04-10 |
JPS61294879A (ja) | 1986-12-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |