DE69528051T2 - Kristallwachstumsverfahren - Google Patents
KristallwachstumsverfahrenInfo
- Publication number
- DE69528051T2 DE69528051T2 DE69528051T DE69528051T DE69528051T2 DE 69528051 T2 DE69528051 T2 DE 69528051T2 DE 69528051 T DE69528051 T DE 69528051T DE 69528051 T DE69528051 T DE 69528051T DE 69528051 T2 DE69528051 T2 DE 69528051T2
- Authority
- DE
- Germany
- Prior art keywords
- crystal growth
- growth process
- crystal
- growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27801594 | 1994-11-11 | ||
PCT/JP1995/002025 WO1996015297A1 (fr) | 1994-11-11 | 1995-10-04 | Procede permettant d'obtenir la croissance d'un cristal massif |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69528051D1 DE69528051D1 (de) | 2002-10-10 |
DE69528051T2 true DE69528051T2 (de) | 2003-01-02 |
Family
ID=17591457
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69528051T Expired - Lifetime DE69528051T2 (de) | 1994-11-11 | 1995-10-04 | Kristallwachstumsverfahren |
Country Status (6)
Country | Link |
---|---|
US (1) | US5871580A (de) |
EP (1) | EP0751242B1 (de) |
JP (1) | JP3343615B2 (de) |
CN (1) | CN1070542C (de) |
DE (1) | DE69528051T2 (de) |
WO (1) | WO1996015297A1 (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2759383B1 (fr) * | 1997-02-07 | 1999-03-26 | Sofradir | Procede pour la realisation d'un semi-conducteur par cristallisation d'un bain liquide et installation pour la mise en oeuvre de ce procede |
JP3648703B2 (ja) * | 2000-01-07 | 2005-05-18 | 株式会社日鉱マテリアルズ | 化合物半導体単結晶の製造方法 |
JP2002203799A (ja) * | 2000-12-28 | 2002-07-19 | Canon Inc | 液相成長方法および液相成長装置 |
JP2002249399A (ja) * | 2001-02-21 | 2002-09-06 | Murata Mfg Co Ltd | 単結晶の製造方法および単結晶 |
JP2002293686A (ja) * | 2001-04-03 | 2002-10-09 | Hitachi Cable Ltd | 化合物半導体単結晶の成長方法及びそれから切り出した基板 |
US6886234B2 (en) * | 2002-01-22 | 2005-05-03 | Seagate Technology Llc | Top cover removal machine for disc drives |
US20030172870A1 (en) * | 2002-03-14 | 2003-09-18 | Axt, Inc. | Apparatus for growing monocrystalline group II-VI and III-V compounds |
CA2510415C (en) * | 2005-06-21 | 2012-08-14 | Redlen Technologies Inc. | A cold-walled vessel process for compounding, homogenizing and consolidating semiconductor compounds |
CA2649322C (en) * | 2008-09-30 | 2011-02-01 | 5N Plus Inc. | Cadmium telluride production process |
US8493649B2 (en) * | 2008-10-23 | 2013-07-23 | Bae Systems Information And Electronic Systems Integration Inc. | Method of producing nonlinear optical crystal CdSiP2 |
CN103374746A (zh) * | 2012-04-27 | 2013-10-30 | 比亚迪股份有限公司 | 一种用于制作准单晶硅的装置及一种准单晶硅的制作方法 |
US9543457B2 (en) | 2012-09-28 | 2017-01-10 | First Solar, Inc. | Method and system for manufacturing back contacts of photovoltaic devices |
US9725821B1 (en) | 2014-02-28 | 2017-08-08 | The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration | Cavity pull rod: device to promote single crystal growth from the melt |
CN116536768B (zh) * | 2023-06-29 | 2023-09-29 | 浙江珏芯微电子有限公司 | 一种碲锌镉单晶的生长用坩埚及生长方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4289570A (en) * | 1978-12-13 | 1981-09-15 | United Technologies Corporation | Seed and method for epitaxial solidification |
JPS5869800A (ja) * | 1981-10-16 | 1983-04-26 | Nec Corp | 3−5族化合物半導体の結晶成長方法 |
US4869776A (en) * | 1986-07-29 | 1989-09-26 | Sharp Kabushiki Kaisha | Method for the growth of a compound semiconductor crystal |
JPS6335349A (ja) * | 1986-07-31 | 1988-02-16 | Toshiba Corp | ワ−ドプロセツサ |
JPH01122998A (ja) * | 1987-11-09 | 1989-05-16 | Sumitomo Electric Ind Ltd | CdZnTe混晶半導体の製造方法 |
JPH0340987A (ja) * | 1989-07-10 | 1991-02-21 | Nippon Telegr & Teleph Corp <Ntt> | 単結晶育成方法 |
JP2525930B2 (ja) * | 1990-05-15 | 1996-08-21 | スタンレー電気株式会社 | ▲ii▼―▲vi▼族化合物半導体の結晶成長方法 |
JPH05279165A (ja) * | 1992-03-27 | 1993-10-26 | Asahi Glass Co Ltd | 化合物半導体単結晶の製造装置 |
JP3196182B2 (ja) * | 1992-05-11 | 2001-08-06 | 住友電気工業株式会社 | 単結晶の育成方法 |
US5499600A (en) * | 1993-12-24 | 1996-03-19 | Stanley Electric Co., Ltd. | Methods for compound semiconductor crystal growth from solution |
JP3465853B2 (ja) * | 1994-01-25 | 2003-11-10 | 同和鉱業株式会社 | ZnSeバルク単結晶の製造方法 |
-
1995
- 1995-04-10 US US08/669,493 patent/US5871580A/en not_active Expired - Lifetime
- 1995-10-04 EP EP95933607A patent/EP0751242B1/de not_active Expired - Lifetime
- 1995-10-04 CN CN95191189A patent/CN1070542C/zh not_active Expired - Fee Related
- 1995-10-04 DE DE69528051T patent/DE69528051T2/de not_active Expired - Lifetime
- 1995-10-04 WO PCT/JP1995/002025 patent/WO1996015297A1/ja active IP Right Grant
- 1995-10-04 JP JP51590796A patent/JP3343615B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0751242A4 (de) | 1998-04-01 |
DE69528051D1 (de) | 2002-10-10 |
EP0751242A1 (de) | 1997-01-02 |
EP0751242B1 (de) | 2002-09-04 |
WO1996015297A1 (fr) | 1996-05-23 |
US5871580A (en) | 1999-02-16 |
CN1138882A (zh) | 1996-12-25 |
JP3343615B2 (ja) | 2002-11-11 |
CN1070542C (zh) | 2001-09-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: NIKKO MATERIALS CO., LTD., TOKIO/TOKYO, JP |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: NIPPON MINING & METALS CO., LTD., TOKIO/TOKYO, JP |
|
R082 | Change of representative |
Ref document number: 751242 Country of ref document: EP Representative=s name: MEISSNER, BOLTE & PARTNER GBR, 86199 AUGSBURG, DE |