DE69206717D1 - Verfahren zur Benutzung einer Vorrichtung zur Ziehung Einkristallstaben - Google Patents

Verfahren zur Benutzung einer Vorrichtung zur Ziehung Einkristallstaben

Info

Publication number
DE69206717D1
DE69206717D1 DE69206717T DE69206717T DE69206717D1 DE 69206717 D1 DE69206717 D1 DE 69206717D1 DE 69206717 T DE69206717 T DE 69206717T DE 69206717 T DE69206717 T DE 69206717T DE 69206717 D1 DE69206717 D1 DE 69206717D1
Authority
DE
Germany
Prior art keywords
single crystal
crystal bars
drawing single
bars
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69206717T
Other languages
English (en)
Other versions
DE69206717T2 (de
Inventor
Yoshihiro Kohu-Appartme Hirano
Atsushi Kohu-Appartment Ozaki
Masahiko Urano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=17011274&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69206717(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of DE69206717D1 publication Critical patent/DE69206717D1/de
Application granted granted Critical
Publication of DE69206717T2 publication Critical patent/DE69206717T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
DE69206717T 1991-08-24 1992-08-24 Verfahren zur Benutzung einer Vorrichtung zur Ziehung Einkristallstaben Expired - Fee Related DE69206717T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3237159A JP2785532B2 (ja) 1991-08-24 1991-08-24 単結晶棒引上育成制御装置

Publications (2)

Publication Number Publication Date
DE69206717D1 true DE69206717D1 (de) 1996-01-25
DE69206717T2 DE69206717T2 (de) 1996-05-02

Family

ID=17011274

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69206717T Expired - Fee Related DE69206717T2 (de) 1991-08-24 1992-08-24 Verfahren zur Benutzung einer Vorrichtung zur Ziehung Einkristallstaben

Country Status (4)

Country Link
US (1) US5370077A (de)
EP (1) EP0529571B1 (de)
JP (1) JP2785532B2 (de)
DE (1) DE69206717T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5593498A (en) * 1995-06-09 1997-01-14 Memc Electronic Materials, Inc. Apparatus for rotating a crucible of a crystal pulling machine
JP3451819B2 (ja) * 1995-12-27 2003-09-29 信越半導体株式会社 単結晶引上装置
US6045610A (en) * 1997-02-13 2000-04-04 Samsung Electronics Co., Ltd. Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnance
US6503594B2 (en) 1997-02-13 2003-01-07 Samsung Electronics Co., Ltd. Silicon wafers having controlled distribution of defects and slip
US6485807B1 (en) 1997-02-13 2002-11-26 Samsung Electronics Co., Ltd. Silicon wafers having controlled distribution of defects, and methods of preparing the same
SG64470A1 (en) * 1997-02-13 1999-04-27 Samsung Electronics Co Ltd Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnace and ingots and wafers manufactured thereby
US6340392B1 (en) 1997-10-24 2002-01-22 Samsung Electronics Co., Ltd. Pulling methods for manufacturing monocrystalline silicone ingots by controlling temperature at the center and edge of an ingot-melt interface
EP1948840A1 (de) * 2005-11-15 2008-07-30 Galileo Vacuum Systems S.p.A. Vorrichtung und verfahren zur steuerung des vakuumverdampfungsquellen von metallen und anderen zugeführten stroms
JP4862863B2 (ja) * 2008-06-09 2012-01-25 信越半導体株式会社 単結晶製造装置の駆動部の制御方法および単結晶製造装置
US9716393B2 (en) 2013-03-12 2017-07-25 Thomson Licensing Battery backup remaining time arrangement
JP6212897B2 (ja) * 2013-03-26 2017-10-18 Ｊｆｅエンジニアリング株式会社 機械式駐輪設備の停電対策システム

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3284172A (en) * 1964-10-13 1966-11-08 Monsanto Co Apparatus and process for preparing semiconductor rods
US3714452A (en) * 1972-02-07 1973-01-30 Gen Electric Circuit breaker monitor for uninterruptable power systems including a static bypass
US4384214A (en) * 1981-08-03 1983-05-17 Integrated Switching Supplies, Inc. Non-interrupting power supplies for loads of less than 500 watts
JPS60223420A (ja) * 1984-04-18 1985-11-07 株式会社日立製作所 瞬時停電自動再始動リレ−
US4617173A (en) * 1984-11-30 1986-10-14 General Signal Corporation System for controlling the diameter of a crystal in a crystal growing furnace
US4686379A (en) * 1985-12-24 1987-08-11 Eikoh Giken Co., Ltd. No-break power supply system
JPS6483595A (en) * 1987-09-25 1989-03-29 Shinetsu Handotai Kk Device for measuring crystal diameter
JPH0280400A (ja) * 1988-09-16 1990-03-20 Hitachi Cable Ltd 半導体単結晶成長炉
US5156822A (en) * 1989-06-23 1992-10-20 General Electric Company Vibration detector and method for a rotating shaft
JPH0774117B2 (ja) * 1989-10-20 1995-08-09 信越半導体株式会社 ヒータの温度パターン作成方法及びこの温度パターンを用いたＳｉ単結晶育成制御装置

Also Published As

Publication number Publication date
JPH0597572A (ja) 1993-04-20
JP2785532B2 (ja) 1998-08-13
EP0529571A1 (de) 1993-03-03
EP0529571B1 (de) 1995-12-13
DE69206717T2 (de) 1996-05-02
US5370077A (en) 1994-12-06

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Legal Events

Date Code Title Description
8363 Opposition against the patent
8339 Ceased/non-payment of the annual fee