DE3781016D1 - Verfahren zur zuechtung eines multikomponent-kristalls. - Google Patents

Verfahren zur zuechtung eines multikomponent-kristalls.

Info

Publication number
DE3781016D1
DE3781016D1 DE8787303566T DE3781016T DE3781016D1 DE 3781016 D1 DE3781016 D1 DE 3781016D1 DE 8787303566 T DE8787303566 T DE 8787303566T DE 3781016 T DE3781016 T DE 3781016T DE 3781016 D1 DE3781016 D1 DE 3781016D1
Authority
DE
Germany
Prior art keywords
growing
component crystal
crystal
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787303566T
Other languages
English (en)
Other versions
DE3781016T2 (de
Inventor
Kenji C O Osaka Works Miyazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE3781016D1 publication Critical patent/DE3781016D1/de
Publication of DE3781016T2 publication Critical patent/DE3781016T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/06—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/906—Special atmosphere other than vacuum or inert

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE8787303566T 1986-04-23 1987-04-23 Verfahren zur zuechtung eines multikomponent-kristalls. Expired - Fee Related DE3781016T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9433686 1986-04-23

Publications (2)

Publication Number Publication Date
DE3781016D1 true DE3781016D1 (de) 1992-09-17
DE3781016T2 DE3781016T2 (de) 1993-04-01

Family

ID=14107439

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787303566T Expired - Fee Related DE3781016T2 (de) 1986-04-23 1987-04-23 Verfahren zur zuechtung eines multikomponent-kristalls.

Country Status (5)

Country Link
US (1) US4853078A (de)
EP (1) EP0244987B1 (de)
JP (1) JPS6345198A (de)
CA (1) CA1301034C (de)
DE (1) DE3781016T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6437488A (en) * 1987-08-03 1989-02-08 Katsumi Mochizuki Production of single crystal of compound semiconductor and device therefor
JP2754765B2 (ja) * 1989-07-19 1998-05-20 富士通株式会社 化合物半導体結晶の製造方法
JP3129236B2 (ja) * 1996-07-15 2001-01-29 住友電気工業株式会社 円筒形容器内流体の対流抑制方法
FR2816755B1 (fr) * 2000-11-13 2002-12-20 Commissariat Energie Atomique Procede de croissance d'un materiau semi-conducteur massif de type ii-vi
US6573164B2 (en) * 2001-03-30 2003-06-03 Technologies And Devices International, Inc. Method of epitaxially growing device structures with sharp layer interfaces utilizing HVPE
US20070032046A1 (en) * 2001-07-06 2007-02-08 Dmitriev Vladimir A Method for simultaneously producing multiple wafers during a single epitaxial growth run and semiconductor structure grown thereby
US6613143B1 (en) * 2001-07-06 2003-09-02 Technologies And Devices International, Inc. Method for fabricating bulk GaN single crystals
US7501023B2 (en) * 2001-07-06 2009-03-10 Technologies And Devices, International, Inc. Method and apparatus for fabricating crack-free Group III nitride semiconductor materials
US20060011135A1 (en) * 2001-07-06 2006-01-19 Dmitriev Vladimir A HVPE apparatus for simultaneously producing multiple wafers during a single epitaxial growth run
US7161110B2 (en) * 2002-07-08 2007-01-09 Czt, Inc. Melting and vaporizing apparatus and method
US8524213B2 (en) * 2003-12-30 2013-09-03 Genzyme Corporation Polymeric materials, their preparation and use
US7641733B2 (en) 2004-09-01 2010-01-05 Rensselaer Polytechnic Institute Method and apparatus for growth of multi-component single crystals
ES2636998T3 (es) 2004-11-24 2017-10-10 Albumedix A/S Método de reticulación de ácido hialurónico con divinil sulfona
US8093094B2 (en) * 2008-06-12 2012-01-10 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Blocking contacts for N-type cadmium zinc telluride
CN103088409B (zh) * 2013-01-31 2015-03-25 中国科学院上海技术物理研究所 一种垂直提拉生长碲锌镉单晶的装置和方法
CN108660512A (zh) * 2018-04-18 2018-10-16 苏州西奇狄材料科技有限公司 一种thm炉及其生产碲化镉或碲锌镉单晶体的方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4404265A (en) * 1969-10-01 1983-09-13 Rockwell International Corporation Epitaxial composite and method of making
US4368098A (en) * 1969-10-01 1983-01-11 Rockwell International Corporation Epitaxial composite and method of making
US3877883A (en) * 1973-07-13 1975-04-15 Rca Corp Method of growing single crystals of compounds
FR2255949B1 (de) * 1973-12-28 1976-10-08 Radiotechnique Compelec
FR2416729A1 (fr) * 1978-02-09 1979-09-07 Radiotechnique Compelec Perfectionnement au procede de fabrication d'un monocristal de compose iii-v''
US4200818A (en) * 1978-08-01 1980-04-29 Westinghouse Electric Corp. Resin impregnated aromatic polyamide covered glass based slot wedge for large dynamoelectric machines
US4379733A (en) * 1981-10-02 1983-04-12 Hughes Aircraft Company Bicameral mode crystal growth apparatus and process
JPS6041036B2 (ja) * 1982-08-27 1985-09-13 財団法人 半導体研究振興会 ＧａＡｓ浮遊帯融解草結晶製造装置
JPS5938185A (ja) * 1982-08-27 1984-03-01 Mac Gregor Far East Ltd 折り畳み式ハツチカバ−
US4632710A (en) * 1983-05-10 1986-12-30 Raytheon Company Vapor phase epitaxial growth of carbon doped layers of Group III-V materials
US4568397A (en) * 1984-09-12 1986-02-04 Raytheon Company Metalorganic vapor phase epitaxial growth of group II-VI semiconductor materials
US4689094A (en) * 1985-12-24 1987-08-25 Raytheon Company Compensation doping of group III-V materials
US4704258A (en) * 1986-04-01 1987-11-03 Grumman Aerospace Corporation Method and apparatus for growth of single crystal material in space

Also Published As

Publication number Publication date
JPS6345198A (ja) 1988-02-26
DE3781016T2 (de) 1993-04-01
CA1301034C (en) 1992-05-19
EP0244987B1 (de) 1992-08-12
US4853078A (en) 1989-08-01
EP0244987A1 (de) 1987-11-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee