DE69508801D1 - Verfahren zur Kristallzüchtung von III-V Halbleiterverbindungen - Google Patents
Verfahren zur Kristallzüchtung von III-V HalbleiterverbindungenInfo
- Publication number
- DE69508801D1 DE69508801D1 DE69508801T DE69508801T DE69508801D1 DE 69508801 D1 DE69508801 D1 DE 69508801D1 DE 69508801 T DE69508801 T DE 69508801T DE 69508801 T DE69508801 T DE 69508801T DE 69508801 D1 DE69508801 D1 DE 69508801D1
- Authority
- DE
- Germany
- Prior art keywords
- iii
- crystal growth
- semiconductor compounds
- compounds
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 150000001875 compounds Chemical class 0.000 title 1
- 239000013078 crystal Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H01L21/205—
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Junction Field-Effect Transistors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP00046194A JP3395318B2 (ja) | 1994-01-07 | 1994-01-07 | 3−5族化合物半導体結晶の成長方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69508801D1 true DE69508801D1 (de) | 1999-05-12 |
DE69508801T2 DE69508801T2 (de) | 1999-08-26 |
Family
ID=11474441
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69508801T Expired - Lifetime DE69508801T2 (de) | 1994-01-07 | 1995-01-05 | Verfahren zur Kristallzüchtung von III-V Halbleiterverbindungen |
Country Status (8)
Country | Link |
---|---|
US (1) | US5603764A (de) |
EP (1) | EP0662532B1 (de) |
JP (1) | JP3395318B2 (de) |
KR (1) | KR100345583B1 (de) |
CA (1) | CA2139551C (de) |
DE (1) | DE69508801T2 (de) |
SG (1) | SG43823A1 (de) |
TW (1) | TW257879B (de) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6392257B1 (en) * | 2000-02-10 | 2002-05-21 | Motorola Inc. | Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same |
US6693033B2 (en) | 2000-02-10 | 2004-02-17 | Motorola, Inc. | Method of removing an amorphous oxide from a monocrystalline surface |
JP2004503920A (ja) * | 2000-05-31 | 2004-02-05 | モトローラ・インコーポレイテッド | 半導体デバイスおよび該半導体デバイスを製造する方法 |
WO2002003437A1 (en) * | 2000-06-30 | 2002-01-10 | Motorola, Inc., A Corporation Of The State Of Delaware | Hybrid semiconductor structure and device |
US6555946B1 (en) | 2000-07-24 | 2003-04-29 | Motorola, Inc. | Acoustic wave device and process for forming the same |
AU2001277001A1 (en) * | 2000-07-24 | 2002-02-05 | Motorola, Inc. | Heterojunction tunneling diodes and process for fabricating same |
US6638838B1 (en) | 2000-10-02 | 2003-10-28 | Motorola, Inc. | Semiconductor structure including a partially annealed layer and method of forming the same |
US20020096683A1 (en) * | 2001-01-19 | 2002-07-25 | Motorola, Inc. | Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate |
US6673646B2 (en) | 2001-02-28 | 2004-01-06 | Motorola, Inc. | Growth of compound semiconductor structures on patterned oxide films and process for fabricating same |
US6709989B2 (en) | 2001-06-21 | 2004-03-23 | Motorola, Inc. | Method for fabricating a semiconductor structure including a metal oxide interface with silicon |
US20030010992A1 (en) * | 2001-07-16 | 2003-01-16 | Motorola, Inc. | Semiconductor structure and method for implementing cross-point switch functionality |
US6646293B2 (en) | 2001-07-18 | 2003-11-11 | Motorola, Inc. | Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates |
US6693298B2 (en) | 2001-07-20 | 2004-02-17 | Motorola, Inc. | Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same |
US6855992B2 (en) * | 2001-07-24 | 2005-02-15 | Motorola Inc. | Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same |
US6667196B2 (en) | 2001-07-25 | 2003-12-23 | Motorola, Inc. | Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method |
US6589856B2 (en) | 2001-08-06 | 2003-07-08 | Motorola, Inc. | Method and apparatus for controlling anti-phase domains in semiconductor structures and devices |
US6639249B2 (en) | 2001-08-06 | 2003-10-28 | Motorola, Inc. | Structure and method for fabrication for a solid-state lighting device |
US6673667B2 (en) | 2001-08-15 | 2004-01-06 | Motorola, Inc. | Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials |
US20030036217A1 (en) * | 2001-08-16 | 2003-02-20 | Motorola, Inc. | Microcavity semiconductor laser coupled to a waveguide |
US20030071327A1 (en) * | 2001-10-17 | 2003-04-17 | Motorola, Inc. | Method and apparatus utilizing monocrystalline insulator |
US6916717B2 (en) * | 2002-05-03 | 2005-07-12 | Motorola, Inc. | Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate |
US20040012037A1 (en) * | 2002-07-18 | 2004-01-22 | Motorola, Inc. | Hetero-integration of semiconductor materials on silicon |
US20040070312A1 (en) * | 2002-10-10 | 2004-04-15 | Motorola, Inc. | Integrated circuit and process for fabricating the same |
US20040069991A1 (en) * | 2002-10-10 | 2004-04-15 | Motorola, Inc. | Perovskite cuprate electronic device structure and process |
US6965128B2 (en) * | 2003-02-03 | 2005-11-15 | Freescale Semiconductor, Inc. | Structure and method for fabricating semiconductor microresonator devices |
US7020374B2 (en) * | 2003-02-03 | 2006-03-28 | Freescale Semiconductor, Inc. | Optical waveguide structure and method for fabricating the same |
US20040164315A1 (en) * | 2003-02-25 | 2004-08-26 | Motorola, Inc. | Structure and device including a tunneling piezoelectric switch and method of forming same |
WO2007025062A2 (en) * | 2005-08-25 | 2007-03-01 | Wakonda Technologies, Inc. | Photovoltaic template |
US8927392B2 (en) * | 2007-11-02 | 2015-01-06 | Siva Power, Inc. | Methods for forming crystalline thin-film photovoltaic structures |
US8236603B1 (en) | 2008-09-04 | 2012-08-07 | Solexant Corp. | Polycrystalline semiconductor layers and methods for forming the same |
US8415187B2 (en) * | 2009-01-28 | 2013-04-09 | Solexant Corporation | Large-grain crystalline thin-film structures and devices and methods for forming the same |
JP2010251458A (ja) * | 2009-04-14 | 2010-11-04 | Sony Corp | 半導体層およびその製造方法ならびに半導体レーザおよびその製造方法 |
JP6055290B2 (ja) * | 2012-11-26 | 2016-12-27 | シャープ株式会社 | 窒化物半導体結晶の製造方法 |
JP6055325B2 (ja) * | 2013-01-30 | 2016-12-27 | シャープ株式会社 | 窒化物半導体結晶の製造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2055774B (en) * | 1979-04-09 | 1983-02-02 | Plessey Co Ltd | Methods of producing semiconductor materials |
EP0106537B1 (de) * | 1982-10-19 | 1989-01-25 | The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and | Chemische Abscheidung aus der Gasphase von Filmen mittels organometallischen Verbindungen |
US4717597A (en) * | 1986-03-21 | 1988-01-05 | Motorola Inc. | Method for providing impurities into a carrier gas line |
JPH01179411A (ja) * | 1988-01-08 | 1989-07-17 | Nec Corp | 3−5族化合物半導体気相成長方法 |
JPH01220432A (ja) * | 1988-02-29 | 1989-09-04 | Toshiba Corp | 化合物半導体層の製造方法 |
JPH0243365A (ja) * | 1988-08-03 | 1990-02-13 | Nippon Mining Co Ltd | 気相成長用有機金属組成物及び気相成長方法 |
JP2781209B2 (ja) * | 1989-06-20 | 1998-07-30 | 富士通株式会社 | 化合物半導体混晶の製造方法 |
US5098857A (en) * | 1989-12-22 | 1992-03-24 | International Business Machines Corp. | Method of making semi-insulating gallium arsenide by oxygen doping in metal-organic vapor phase epitaxy |
JP3347175B2 (ja) * | 1993-03-19 | 2002-11-20 | 富士通株式会社 | 半導体装置とその製造方法 |
JP3101321B2 (ja) * | 1991-02-19 | 2000-10-23 | 富士通株式会社 | 酸素を含んだアイソレーション領域を有する半導体装置およびその製造方法 |
-
1994
- 1994-01-07 JP JP00046194A patent/JP3395318B2/ja not_active Expired - Fee Related
- 1994-12-14 TW TW083111655A patent/TW257879B/zh not_active IP Right Cessation
-
1995
- 1995-01-04 CA CA002139551A patent/CA2139551C/en not_active Expired - Fee Related
- 1995-01-05 KR KR1019950000061A patent/KR100345583B1/ko not_active IP Right Cessation
- 1995-01-05 US US08/368,872 patent/US5603764A/en not_active Expired - Lifetime
- 1995-01-05 EP EP95300043A patent/EP0662532B1/de not_active Expired - Lifetime
- 1995-01-05 SG SG1996001500A patent/SG43823A1/en unknown
- 1995-01-05 DE DE69508801T patent/DE69508801T2/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR100345583B1 (ko) | 2002-11-23 |
KR950034502A (ko) | 1995-12-28 |
CA2139551A1 (en) | 1995-07-08 |
TW257879B (de) | 1995-09-21 |
US5603764A (en) | 1997-02-18 |
JPH07201737A (ja) | 1995-08-04 |
JP3395318B2 (ja) | 2003-04-14 |
DE69508801T2 (de) | 1999-08-26 |
EP0662532A1 (de) | 1995-07-12 |
EP0662532B1 (de) | 1999-04-07 |
SG43823A1 (en) | 1997-11-14 |
CA2139551C (en) | 2004-12-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: SUMITOMO CHEMICAL CO. LTD., TOKIO/TOKYO, JP |