DE69717531D1 - Verfahren zur Herstellung III-V Verbindungshalbleiterkristallen - Google Patents

Verfahren zur Herstellung III-V Verbindungshalbleiterkristallen

Info

Publication number
DE69717531D1
DE69717531D1 DE69717531T DE69717531T DE69717531D1 DE 69717531 D1 DE69717531 D1 DE 69717531D1 DE 69717531 T DE69717531 T DE 69717531T DE 69717531 T DE69717531 T DE 69717531T DE 69717531 D1 DE69717531 D1 DE 69717531D1
Authority
DE
Germany
Prior art keywords
compound semiconductor
semiconductor crystals
manufacturing iii
iii
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69717531T
Other languages
English (en)
Other versions
DE69717531T2 (de
Inventor
Tomohiro Kawase
Masami Tatsumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=14448194&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69717531(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE69717531D1 publication Critical patent/DE69717531D1/de
Application granted granted Critical
Publication of DE69717531T2 publication Critical patent/DE69717531T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/10—Solid or liquid components, e.g. Verneuil method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B27/00—Single-crystal growth under a protective fluid
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69717531T 1996-04-26 1997-04-24 Verfahren zur Herstellung III-V Verbindungshalbleiterkristallen Expired - Lifetime DE69717531T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10700996 1996-04-26

Publications (2)

Publication Number Publication Date
DE69717531D1 true DE69717531D1 (de) 2003-01-16
DE69717531T2 DE69717531T2 (de) 2003-04-10

Family

ID=14448194

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69717531T Expired - Lifetime DE69717531T2 (de) 1996-04-26 1997-04-24 Verfahren zur Herstellung III-V Verbindungshalbleiterkristallen

Country Status (4)

Country Link
US (3) US6007622A (de)
EP (2) EP0803593B1 (de)
JP (1) JP3201305B2 (de)
DE (1) DE69717531T2 (de)

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US6045767A (en) * 1997-11-21 2000-04-04 American Xtal Technology Charge for vertical boat growth process and use thereof
JP4135239B2 (ja) * 1997-12-26 2008-08-20 住友電気工業株式会社 半導体結晶およびその製造方法ならびに製造装置
JP3596337B2 (ja) * 1998-03-25 2004-12-02 住友電気工業株式会社 化合物半導体結晶の製造方法
JP2967780B1 (ja) * 1998-09-28 1999-10-25 住友電気工業株式会社 ＧａＡｓ単結晶基板およびそれを用いたエピタキシャルウェハ
DE19912486A1 (de) * 1999-03-19 2000-09-28 Freiberger Compound Mat Gmbh Verfahren und Vorrichtung zur Herstellung von Einkristallen sowie Kristallkeim
US6896729B2 (en) * 2001-07-05 2005-05-24 Axt, Inc. Method and apparatus for growing semiconductor crystals with a rigid support with carbon doping and resistivity control and thermal gradient control
US6955858B2 (en) * 2001-12-07 2005-10-18 North Carolina State University Transition metal doped ferromagnetic III-V nitride material films and methods of fabricating the same
US20030172870A1 (en) * 2002-03-14 2003-09-18 Axt, Inc. Apparatus for growing monocrystalline group II-VI and III-V compounds
JP2005314139A (ja) * 2004-04-27 2005-11-10 Sumitomo Electric Ind Ltd 化合物半導体単結晶の製造方法
JP4552521B2 (ja) * 2004-06-03 2010-09-29 住友電気工業株式会社 Ｉｉｉ−ｖ族化合物半導体結晶の製造方法
JP4595450B2 (ja) * 2004-09-02 2010-12-08 信越半導体株式会社 炭素ドープシリコン単結晶の製造方法
JP3818311B1 (ja) * 2005-03-23 2006-09-06 住友電気工業株式会社 結晶育成用坩堝
EP1739213B1 (de) 2005-07-01 2011-04-13 Freiberger Compound Materials GmbH Vorrichtung und Verfahren zum Tempern von III-V-Wafern sowie getemperte III-V-Halbleitereinkristallwafer
US8361225B2 (en) 2007-05-09 2013-01-29 Axt, Inc. Low etch pit density (EPD) semi-insulating III-V wafers
US7566641B2 (en) * 2007-05-09 2009-07-28 Axt, Inc. Low etch pit density (EPD) semi-insulating GaAs wafers
ATE544884T1 (de) * 2007-12-19 2012-02-15 Schott Ag Verfahren zur herstellung eines monokristallinen oder polykristallinen halbleitermaterials
JP5110026B2 (ja) * 2009-04-03 2012-12-26 住友電気工業株式会社 Ｉｉｉ−ｖ族化合物半導体結晶の製造方法
US8512470B2 (en) * 2011-04-08 2013-08-20 China Crystal Technologies Co. Ltd System and methods for growing high-resistance single crystals
WO2019053856A1 (ja) * 2017-09-14 2019-03-21 住友電気工業株式会社 ヒ化ガリウム系化合物半導体結晶およびウエハ群
DE102019208389A1 (de) 2019-06-07 2020-12-10 Freiberger Compound Materials Gmbh Verfahren zur Herstellung von Restspannungs- und versetzungsfreien AIII-BV-Substratwafern
CN112267148B (zh) * 2020-09-21 2022-02-22 广东先导微电子科技有限公司 一种石英管固定装置及其应用方法

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US4083748A (en) 1975-10-30 1978-04-11 Western Electric Company, Inc. Method of forming and growing a single crystal of a semiconductor compound
US4404172A (en) 1981-01-05 1983-09-13 Western Electric Company, Inc. Method and apparatus for forming and growing a single crystal of a semiconductor compound
US4521272A (en) 1981-01-05 1985-06-04 At&T Technologies, Inc. Method for forming and growing a single crystal of a semiconductor compound
JPS57194471A (en) * 1981-05-25 1982-11-30 Hitachi Cable Method of connecting rubber and plastic insulated cable
JPS5914440B2 (ja) 1981-09-18 1984-04-04 住友電気工業株式会社 ＣａＡｓ単結晶への硼素のド−ピング方法
JPS5954699A (ja) 1982-09-22 1984-03-29 Toshiba Corp 単結晶の製造方法
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US5256381A (en) 1984-02-21 1993-10-26 Sumitomo Electric Industries, Ltd. Apparatus for growing single crystals of III-V compound semiconductors
JPS60210599A (ja) * 1984-04-03 1985-10-23 Nec Corp 半絶縁性ＧａＡｓ結晶の成長方法
US4594173A (en) 1984-04-19 1986-06-10 Westinghouse Electric Corp. Indium doped gallium arsenide crystals and method of preparation
JPS60251191A (ja) 1984-05-25 1985-12-11 Res Dev Corp Of Japan 高解離圧化合物単結晶成長方法
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JPH085759B2 (ja) * 1990-02-28 1996-01-24 住友金属鉱山株式会社 半絶縁性ＧａＡｓ基板の製造方法
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Also Published As

Publication number Publication date
USRE41551E1 (en) 2010-08-24
EP0803593B1 (de) 2002-12-04
JP3201305B2 (ja) 2001-08-20
EP0803593A1 (de) 1997-10-29
JPH1036197A (ja) 1998-02-10
EP1288342A3 (de) 2009-01-28
US6007622A (en) 1999-12-28
USRE39778E1 (en) 2007-08-21
DE69717531T2 (de) 2003-04-10
EP1288342A2 (de) 2003-03-05
EP1288342B1 (de) 2013-11-20

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8363 Opposition against the patent