ATE544884T1 - Verfahren zur herstellung eines monokristallinen oder polykristallinen halbleitermaterials - Google Patents

Verfahren zur herstellung eines monokristallinen oder polykristallinen halbleitermaterials

Info

Publication number
ATE544884T1
ATE544884T1 AT08171560T AT08171560T ATE544884T1 AT E544884 T1 ATE544884 T1 AT E544884T1 AT 08171560 T AT08171560 T AT 08171560T AT 08171560 T AT08171560 T AT 08171560T AT E544884 T1 ATE544884 T1 AT E544884T1
Authority
AT
Austria
Prior art keywords
raw material
semiconductor raw
melted
melting
semiconductor
Prior art date
Application number
AT08171560T
Other languages
English (en)
Inventor
Uwe Dr Sahr
Matthias Mueller
Ingo Dr Schwirtlich
Frank-Thomas Dr Lentes
Frank Dr Buellesfeld
Dietmar Jockel
Original Assignee
Schott Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=40342237&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE544884(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from DE200710061704 external-priority patent/DE102007061704A1/de
Priority claimed from DE200810022882 external-priority patent/DE102008022882A1/de
Application filed by Schott Ag filed Critical Schott Ag
Application granted granted Critical
Publication of ATE544884T1 publication Critical patent/ATE544884T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
AT08171560T 2007-12-19 2008-12-12 Verfahren zur herstellung eines monokristallinen oder polykristallinen halbleitermaterials ATE544884T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE200710061704 DE102007061704A1 (de) 2007-12-19 2007-12-19 Verfahren zur Herstellung eines ein- oder polykristallinen Materials
DE200810022882 DE102008022882A1 (de) 2008-05-08 2008-05-08 Verfahren und Vorrichtung zum Kristallisieren eines Halbleitermaterials, inbesondere von Silizium

Publications (1)

Publication Number Publication Date
ATE544884T1 true ATE544884T1 (de) 2012-02-15

Family

ID=40342237

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08171560T ATE544884T1 (de) 2007-12-19 2008-12-12 Verfahren zur herstellung eines monokristallinen oder polykristallinen halbleitermaterials

Country Status (4)

Country Link
US (1) US8101019B2 (de)
EP (1) EP2072645B2 (de)
AT (1) ATE544884T1 (de)
TW (1) TW200938664A (de)

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US10202704B2 (en) * 2011-04-20 2019-02-12 Gtat Ip Holding Llc Side feed system for Czochralski growth of silicon ingots
WO2013019399A2 (en) * 2011-08-04 2013-02-07 Gtat Corporation Method for producing a monocrystalline product
WO2013112231A1 (en) * 2012-01-27 2013-08-01 Gtat Corporation Method of producing monocrystalline silicon
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TWI551737B (zh) * 2014-08-07 2016-10-01 Method for manufacturing polycrystalline silicon ingots
CN108330531A (zh) * 2018-03-23 2018-07-27 廊坊赫尔劳斯太阳能光伏有限公司 用高频波进行硅单晶生长过程控制的硅单晶炉
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US11725300B2 (en) * 2021-06-13 2023-08-15 Epir, Inc. In-situ laser annealing of Te growth defects in CdZnTe (ilast-czt)

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Also Published As

Publication number Publication date
EP2072645A2 (de) 2009-06-24
US8101019B2 (en) 2012-01-24
US20090158993A1 (en) 2009-06-25
EP2072645A3 (de) 2010-09-29
EP2072645B1 (de) 2012-02-08
TW200938664A (en) 2009-09-16
EP2072645B2 (de) 2014-12-24

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