DE69230962T2 - Kristallzüchtungsverfahren zur Herstellung von grossflächigen GaAs und damit hergestellte Infrarot-Fenster/Kuppel - Google Patents
Kristallzüchtungsverfahren zur Herstellung von grossflächigen GaAs und damit hergestellte Infrarot-Fenster/KuppelInfo
- Publication number
- DE69230962T2 DE69230962T2 DE69230962T DE69230962T DE69230962T2 DE 69230962 T2 DE69230962 T2 DE 69230962T2 DE 69230962 T DE69230962 T DE 69230962T DE 69230962 T DE69230962 T DE 69230962T DE 69230962 T2 DE69230962 T2 DE 69230962T2
- Authority
- DE
- Germany
- Prior art keywords
- production
- crystal growth
- growth process
- infrared windows
- domes made
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 title 1
- 239000013078 crystal Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/42—Gallium arsenide
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/44—Gallium phosphide
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/64—Flat crystals, e.g. plates, strips or discs
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/02—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of crystals, e.g. rock-salt, semi-conductors
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/207—Filters comprising semiconducting materials
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/208—Filters for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/06—Gettering
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US74860291A | 1991-08-22 | 1991-08-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69230962D1 DE69230962D1 (de) | 2000-05-31 |
DE69230962T2 true DE69230962T2 (de) | 2000-10-05 |
Family
ID=25010146
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69233617T Expired - Lifetime DE69233617D1 (de) | 1991-08-22 | 1992-08-21 | Verfahren zum Entfernen einer B2O3-Einkapselungsmasse von einer Struktur |
DE69230962T Expired - Lifetime DE69230962T2 (de) | 1991-08-22 | 1992-08-21 | Kristallzüchtungsverfahren zur Herstellung von grossflächigen GaAs und damit hergestellte Infrarot-Fenster/Kuppel |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69233617T Expired - Lifetime DE69233617D1 (de) | 1991-08-22 | 1992-08-21 | Verfahren zum Entfernen einer B2O3-Einkapselungsmasse von einer Struktur |
Country Status (3)
Country | Link |
---|---|
US (6) | US6010638A (de) |
EP (3) | EP0529963B1 (de) |
DE (2) | DE69233617D1 (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3201305B2 (ja) * | 1996-04-26 | 2001-08-20 | 住友電気工業株式会社 | Iii−v族化合物半導体結晶の製造方法 |
US6123026A (en) * | 1996-11-12 | 2000-09-26 | Raytheon Company | System and method for increasing the durability of a sapphire window in high stress environments |
WO1999010237A2 (en) * | 1997-08-19 | 1999-03-04 | Raytheon Company | System and method for increasing the durability of a sapphire window in high stress environments |
JP3596337B2 (ja) | 1998-03-25 | 2004-12-02 | 住友電気工業株式会社 | 化合物半導体結晶の製造方法 |
JP3648703B2 (ja) * | 2000-01-07 | 2005-05-18 | 株式会社日鉱マテリアルズ | 化合物半導体単結晶の製造方法 |
US6676847B2 (en) * | 2000-02-25 | 2004-01-13 | Ashland Inc. | Monocarboxylic acid based antifreeze composition for diesel engines |
IL139304A (en) | 2000-10-26 | 2006-07-05 | Rafael Advanced Defense Sys | Optical window assembly for use in a supersonic platform |
JP2006504667A (ja) | 2002-08-08 | 2006-02-09 | ベーリンガー インゲルハイム ファーマシューティカルズ インコーポレイテッド | 炎症過程に関与するサイトカインの抑制剤としてのフッ素化フェニル−ナフタレニル−尿素化合物 |
US7148480B2 (en) * | 2004-07-14 | 2006-12-12 | The Regents Of The University Of California | Polycrystalline optical window materials from nanoceramics |
EP1739210B1 (de) * | 2005-07-01 | 2012-03-07 | Freiberger Compound Materials GmbH | Verfahren zur Herstellung von dotierten Halbleiter-Einkristallen, und III-V-Halbleiter-Einkristall |
US8329295B2 (en) * | 2008-07-11 | 2012-12-11 | Freiberger Compound Materials Gmbh | Process for producing doped gallium arsenide substrate wafers having low optical absorption coefficient |
DE102008032628A1 (de) * | 2008-07-11 | 2010-01-28 | Freiberger Compound Materials Gmbh | Verfahren zur Herstellung von dotierten Galliumarsenidsubstratwafern mit niedrigem optischen Absorptionskoeffizienten |
US8023818B2 (en) * | 2008-07-24 | 2011-09-20 | Fluke Corporation | Articulating infrared window |
US9575219B2 (en) | 2011-02-11 | 2017-02-21 | Duraiswamy Ravichandran | Ultra-high densification of ZnS for nano-grain optical windows |
US8426817B2 (en) | 2011-03-02 | 2013-04-23 | Texas Biochemicals, Inc. | Monodispersed and spherical ZnS for nano-grain optical windows |
CN104913897B (zh) * | 2015-07-02 | 2017-09-12 | 中国科学院光电研究院 | 一种高空高速环境气动效应的模拟装置 |
Family Cites Families (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE927658C (de) * | 1952-03-10 | 1955-05-12 | Marconi Wireless Telegraph Co | Verfahren zur Gewinnung von Germaniummetall |
GB803347A (en) * | 1954-08-30 | 1958-10-22 | Siemens Ag | Improvements in or relating to optical systems |
US3496118A (en) * | 1966-04-19 | 1970-02-17 | Bell & Howell Co | Iiib-vb compounds |
US3533967A (en) * | 1966-11-10 | 1970-10-13 | Monsanto Co | Double-doped gallium arsenide and method of preparation |
US3591340A (en) * | 1968-07-11 | 1971-07-06 | Ibm | Method for preparing high purity crystalline semiconductive materials in bulk |
US3898051A (en) * | 1973-12-28 | 1975-08-05 | Crystal Syst | Crystal growing |
FR2345253A1 (fr) * | 1976-03-23 | 1977-10-21 | Radiotechnique Compelec | Creuset pour la fabrication d'un lingot de materiau cristallin |
SU1124992A1 (ru) * | 1977-12-26 | 1984-11-23 | Предприятие П/Я А-3605 | Массообменный аппарат |
US4243471A (en) * | 1978-05-02 | 1981-01-06 | International Business Machines Corporation | Method for directional solidification of silicon |
JPS58115085A (ja) * | 1981-12-28 | 1983-07-08 | Fujitsu Ltd | 半導体結晶の製造方法 |
DE3375410D1 (de) * | 1982-09-01 | 1988-02-25 | N.V. Philips' Gloeilampenfabrieken | |
US4590043A (en) * | 1982-12-27 | 1986-05-20 | Sri International | Apparatus for obtaining silicon from fluosilicic acid |
US4585511A (en) * | 1983-07-22 | 1986-04-29 | Cominco Ltd. | Method of growing gallium arsenide crystals using boron oxide encapsulant |
JPS60221388A (ja) * | 1984-04-17 | 1985-11-06 | Sumitomo Electric Ind Ltd | GaAs単結晶の製造方法 |
DE3441707C2 (de) * | 1984-11-15 | 1994-01-27 | Ringsdorff Werke Gmbh | Tiegel zum Herstellen von Kristallen und Verwendung des Tiegels |
US4589898A (en) * | 1984-12-17 | 1986-05-20 | Ppg Industries, Inc. | Method of cleaning heat transfer fins |
JPS61256993A (ja) * | 1985-05-09 | 1986-11-14 | Toyo Tanso Kk | シリコン単結晶引上げ装置用黒鉛子るつぼ及びヒ−タ− |
US4773852A (en) * | 1985-06-11 | 1988-09-27 | Denki Kagaku Kogyo Kabushiki Kaisha | Pyrolytic boron nitride crucible and method for producing the same |
JPS6212695A (ja) * | 1985-07-10 | 1987-01-21 | Nec Corp | 坩堝処理方法 |
FR2596777B1 (fr) * | 1986-04-08 | 1994-01-21 | Etat Francais Cnet | Procede de preparation de semi-isolants 3-5 mono-cristallins par dopage et application des semi-isolants ainsi obtenus |
US4888242A (en) * | 1986-05-27 | 1989-12-19 | Toyo Tanson Co., Ltd. | Graphite sheet material |
US4826266A (en) * | 1986-10-23 | 1989-05-02 | Lockheed Corporation | Conductive infrared window |
US4738831A (en) * | 1986-10-31 | 1988-04-19 | The United States Of America As Represented By The Administrator Of The National Aeronautics & Space Administration | Method and apparatus for growing crystals |
JPH0712998B2 (ja) * | 1986-11-13 | 1995-02-15 | 住友電気工業株式会社 | ▲ii▼−▲vi▼族化合物単結晶成長用ボ−ト |
JPS63152186A (ja) * | 1986-12-17 | 1988-06-24 | Hitachi Metals Ltd | 炭酸ガスレ−ザ用窓材 |
US5173443A (en) * | 1987-02-13 | 1992-12-22 | Northrop Corporation | Method of manufacture of optically transparent electrically conductive semiconductor windows |
US4840699A (en) * | 1987-06-12 | 1989-06-20 | Ghemini Technologies | Gallium arsenide crystal growth |
DE3732073A1 (de) * | 1987-09-23 | 1989-04-06 | Siemens Ag | Hochreine innenauskleidung fuer einen elektroniederschachtofen |
US5116456A (en) * | 1988-04-18 | 1992-05-26 | Solon Technologies, Inc. | Apparatus and method for growth of large single crystals in plate/slab form |
US4946542A (en) * | 1988-12-05 | 1990-08-07 | At&T Bell Laboratories | Crystal growth method in crucible with step portion |
JPH02160687A (ja) * | 1988-12-14 | 1990-06-20 | Mitsui Mining Co Ltd | 単結晶製造方法 |
US4999082A (en) * | 1989-09-14 | 1991-03-12 | Akzo America Inc. | Process for producing monocrystalline group II-IV or group III-V compounds and products thereof |
US5077593A (en) * | 1989-12-27 | 1991-12-31 | Hughes Aircraft Company | Dark current-free multiquantum well superlattice infrared detector |
US5064497A (en) * | 1990-03-09 | 1991-11-12 | At&T Bell Laboratories | Crystal growth method and apparatus |
US5134261A (en) * | 1990-03-30 | 1992-07-28 | The United States Of America As Represented By The Secretary Of The Air Force | Apparatus and method for controlling gradients in radio frequency heating |
US5131975A (en) * | 1990-07-10 | 1992-07-21 | The Regents Of The University Of California | Controlled growth of semiconductor crystals |
JP2543782B2 (ja) * | 1990-10-25 | 1996-10-16 | コマツ電子金属株式会社 | 半導体単結晶引上装置の黒鉛ルツボ |
-
1992
- 1992-08-21 EP EP92307647A patent/EP0529963B1/de not_active Expired - Lifetime
- 1992-08-21 DE DE69233617T patent/DE69233617D1/de not_active Expired - Lifetime
- 1992-08-21 DE DE69230962T patent/DE69230962T2/de not_active Expired - Lifetime
- 1992-08-21 EP EP98203932A patent/EP0906971A3/de not_active Withdrawn
- 1992-08-21 EP EP98203896A patent/EP0913505B1/de not_active Expired - Lifetime
- 1992-11-17 US US07/977,388 patent/US6010638A/en not_active Expired - Fee Related
-
1995
- 1995-06-07 US US08/473,419 patent/US6287381B1/en not_active Expired - Lifetime
- 1995-06-07 US US08/476,831 patent/US6287478B1/en not_active Expired - Lifetime
- 1995-06-07 US US08/486,925 patent/US5716449A/en not_active Expired - Lifetime
- 1995-06-07 US US08/472,601 patent/US5611866A/en not_active Expired - Lifetime
- 1995-06-07 US US08/473,420 patent/US6277297B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0529963A2 (de) | 1993-03-03 |
EP0906971A2 (de) | 1999-04-07 |
US6287381B1 (en) | 2001-09-11 |
DE69233617D1 (de) | 2006-05-24 |
EP0529963A3 (de) | 1995-06-14 |
EP0913505A3 (de) | 2002-03-27 |
EP0906971A3 (de) | 2002-01-30 |
US6010638A (en) | 2000-01-04 |
US5716449A (en) | 1998-02-10 |
US5611866A (en) | 1997-03-18 |
EP0913505A2 (de) | 1999-05-06 |
DE69230962D1 (de) | 2000-05-31 |
US6277297B1 (en) | 2001-08-21 |
US6287478B1 (en) | 2001-09-11 |
EP0913505B1 (de) | 2006-04-12 |
EP0529963B1 (de) | 2000-04-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
R071 | Expiry of right |
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