DE69619513T2 - Verfahren und vorrichtung zum züchten von einkristallen - Google Patents

Verfahren und vorrichtung zum züchten von einkristallen

Info

Publication number
DE69619513T2
DE69619513T2 DE69619513T DE69619513T DE69619513T2 DE 69619513 T2 DE69619513 T2 DE 69619513T2 DE 69619513 T DE69619513 T DE 69619513T DE 69619513 T DE69619513 T DE 69619513T DE 69619513 T2 DE69619513 T2 DE 69619513T2
Authority
DE
Germany
Prior art keywords
single crystals
growing single
growing
crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69619513T
Other languages
English (en)
Other versions
DE69619513D1 (de
Inventor
Eiichi Iino
Yasushi Nakamura
Seiichiro Otsuka
Koji Midzuishi
Masanori Kimura
Hirotoshi Yamagishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE69619513D1 publication Critical patent/DE69619513D1/de
Publication of DE69619513T2 publication Critical patent/DE69619513T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/911—Seed or rod holders
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
DE69619513T 1995-04-21 1996-04-22 Verfahren und vorrichtung zum züchten von einkristallen Expired - Lifetime DE69619513T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP12068095 1995-04-21
JP25689295A JP3402012B2 (ja) 1995-04-21 1995-09-09 単結晶の成長方法及び装置
PCT/JP1996/001089 WO1996033301A1 (fr) 1995-04-21 1996-04-22 Procede et installation destines a la cristallogenese de monocristaux

Publications (2)

Publication Number Publication Date
DE69619513D1 DE69619513D1 (de) 2002-04-04
DE69619513T2 true DE69619513T2 (de) 2002-10-17

Family

ID=26458206

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69619513T Expired - Lifetime DE69619513T2 (de) 1995-04-21 1996-04-22 Verfahren und vorrichtung zum züchten von einkristallen

Country Status (6)

Country Link
US (1) US6113686A (de)
EP (1) EP0826796B1 (de)
JP (1) JP3402012B2 (de)
KR (1) KR100422851B1 (de)
DE (1) DE69619513T2 (de)
WO (1) WO1996033301A1 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3528448B2 (ja) * 1996-07-23 2004-05-17 信越半導体株式会社 単結晶の引上げ方法及び装置
TW541365B (en) * 1996-08-30 2003-07-11 Sumitomo Sitix Corp Single crystal pulling method and single crystal pulling device
JP3718921B2 (ja) * 1996-09-18 2005-11-24 信越半導体株式会社 単結晶保持方法および単結晶成長方法
JP3478021B2 (ja) * 1996-09-18 2003-12-10 信越半導体株式会社 結晶保持装置
JP3598681B2 (ja) * 1996-09-26 2004-12-08 信越半導体株式会社 単結晶の引上げ方法及び装置
JP3596226B2 (ja) * 1997-03-17 2004-12-02 信越半導体株式会社 単結晶保持装置
KR19980079891A (ko) * 1997-03-27 1998-11-25 모리 레이자로 단결정 성장장치 및 단결정 성장방법
KR19980079892A (ko) * 1997-03-28 1998-11-25 모리 레이자로 단결정 인상장치
JPH10273390A (ja) * 1997-03-28 1998-10-13 Super Silicon Kenkyusho:Kk 半導体単結晶製造装置
JPH10279386A (ja) * 1997-03-31 1998-10-20 Super Silicon Kenkyusho:Kk 単結晶引上げ装置及び単結晶支持機構並びに単結晶引上げ方法
TW370580B (en) * 1997-09-22 1999-09-21 Super Silicon Crystal Res Monocrystal pulling device
KR100244233B1 (en) * 1997-12-03 2000-02-01 Lg Electronics Inc Shadow mask for cathode ray tube and method of manufacturing thereof
JP2000086386A (ja) * 1998-09-14 2000-03-28 Sumitomo Metal Ind Ltd 単結晶育成装置及び方法
TW200528592A (en) 2004-02-19 2005-09-01 Komatsu Denshi Kinzoku Kk Method for manufacturing single crystal semiconductor
US8691008B2 (en) * 2009-03-31 2014-04-08 Memc Electronic Materials, Inc. Systems for weighing a pulled object
KR101134499B1 (ko) * 2010-01-29 2012-04-13 주식회사 코원이노텍 이중가이더를 구비하는 실리콘 단결정 잉곳 형성장치
JP5483591B2 (ja) * 2010-10-08 2014-05-07 日鉄住金ファインテック株式会社 単結晶引上装置および坩堝支持装置
US9657407B2 (en) * 2013-10-29 2017-05-23 Siemens Medical Solutions Usa, Inc. Cantilever device for extending capacity of a scale used in a crystal growth apparatus
CN105239155B (zh) * 2015-11-17 2017-10-24 哈尔滨奥瑞德光电技术有限公司 改进的大尺寸蓝宝石单晶炉支架结构
CN108588815A (zh) * 2018-06-29 2018-09-28 天津市环欧半导体材料技术有限公司 一种区熔单晶炉用可调节式单晶夹持装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3953281A (en) * 1974-06-27 1976-04-27 International Business Machines Corporation Method and system for growing monocrystalline ingots
JPS59232989A (ja) * 1983-06-13 1984-12-27 Hitachi Cable Ltd 化合物半導体単結晶の製造装置
JPS62288191A (ja) * 1986-06-06 1987-12-15 Kyushu Denshi Kinzoku Kk 単結晶成長方法及びその装置
JPS63252991A (ja) * 1987-04-09 1988-10-20 Mitsubishi Metal Corp 落下防止保持部を有するｃｚ単結晶
EP0449260B1 (de) * 1990-03-30 1995-08-30 Shin-Etsu Handotai Company Limited Vorrichtung zur Herstellung von Monokristallen nach dem Czochralski-Verfahren
JPH07103000B2 (ja) * 1990-03-30 1995-11-08 信越半導体株式会社 結晶引上装置
JPH07515B2 (ja) * 1990-04-11 1995-01-11 信越半導体株式会社 結晶引上装置
JPH05232989A (ja) * 1992-02-20 1993-09-10 Nippon Telegr & Teleph Corp <Ntt> 音響モデルの話者適応化法
JP2946934B2 (ja) * 1992-03-19 1999-09-13 三菱マテリアル株式会社 単結晶引上装置
JPH05319987A (ja) * 1992-05-25 1993-12-03 Nippon Steel Corp シリコン単結晶の製造方法
US5326113A (en) * 1992-08-19 1994-07-05 Montalvo Iii William W Single acting core chuck
JP3615291B2 (ja) * 1995-12-25 2005-02-02 信越半導体株式会社 引上げ結晶重量測定装置
US5885347A (en) * 1997-01-29 1999-03-23 Komatsu, Ltd. Apparatus and method for lifting single crystals
TW486572B (en) * 1997-02-04 2002-05-11 Komatsu Denshi Kinzoku Kk Device for dragging crystalline

Also Published As

Publication number Publication date
WO1996033301A1 (fr) 1996-10-24
DE69619513D1 (de) 2002-04-04
EP0826796A4 (de) 1998-07-15
KR100422851B1 (ko) 2004-05-20
US6113686A (en) 2000-09-05
EP0826796A1 (de) 1998-03-04
EP0826796B1 (de) 2002-02-27
JPH092893A (ja) 1997-01-07
JP3402012B2 (ja) 2003-04-28
KR19990007931A (ko) 1999-01-25

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