DE69623837D1 - Verfahren und Vorrichtung zur Einkristallzüchtung - Google Patents

Verfahren und Vorrichtung zur Einkristallzüchtung

Info

Publication number
DE69623837D1
DE69623837D1 DE69623837T DE69623837T DE69623837D1 DE 69623837 D1 DE69623837 D1 DE 69623837D1 DE 69623837 T DE69623837 T DE 69623837T DE 69623837 T DE69623837 T DE 69623837T DE 69623837 D1 DE69623837 D1 DE 69623837D1
Authority
DE
Germany
Prior art keywords
single crystal
crystal growing
growing method
growing
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69623837T
Other languages
English (en)
Other versions
DE69623837T2 (de
Inventor
Minoru Imaeda
Akihiko Honda
Katsuhiro Imai
Yuichiro Imanishi
Nobuyuki Kokune
Shoji Sogo
Kazuaki Yamaguchi
Tetsuo Taniuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP06258695A external-priority patent/JP3668276B2/ja
Priority claimed from JP06588395A external-priority patent/JP3643136B2/ja
Priority claimed from JP13657895A external-priority patent/JP2966317B2/ja
Priority claimed from JP02907896A external-priority patent/JP3792768B2/ja
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Application granted granted Critical
Publication of DE69623837D1 publication Critical patent/DE69623837D1/de
Publication of DE69623837T2 publication Critical patent/DE69623837T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/08—Downward pulling
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/30—Niobates; Vanadates; Tantalates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1056—Seed pulling including details of precursor replenishment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1064—Seed pulling including a fully-sealed or vacuum-maintained crystallization chamber [e.g., ampoule]
DE69623837T 1995-03-22 1996-03-21 Verfahren und Vorrichtung zur Einkristallzüchtung Expired - Lifetime DE69623837T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP06258695A JP3668276B2 (ja) 1995-03-22 1995-03-22 酸化物単結晶の製造方法および装置
JP6258595 1995-03-22
JP06588395A JP3643136B2 (ja) 1995-03-24 1995-03-24 酸化物単結晶の製造方法および装置
JP13657895A JP2966317B2 (ja) 1995-06-02 1995-06-02 単結晶品の連続育成方法およびその装置
JP02907896A JP3792768B2 (ja) 1995-03-22 1996-02-16 酸化物単結晶の製造方法および装置

Publications (2)

Publication Number Publication Date
DE69623837D1 true DE69623837D1 (de) 2002-10-31
DE69623837T2 DE69623837T2 (de) 2003-07-31

Family

ID=27521101

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69623837T Expired - Lifetime DE69623837T2 (de) 1995-03-22 1996-03-21 Verfahren und Vorrichtung zur Einkristallzüchtung

Country Status (3)

Country Link
US (3) US5690734A (de)
EP (2) EP1217103A3 (de)
DE (1) DE69623837T2 (de)

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US6800137B2 (en) 1995-06-16 2004-10-05 Phoenix Scientific Corporation Binary and ternary crystal purification and growth method and apparatus
US5993540A (en) * 1995-06-16 1999-11-30 Optoscint, Inc. Continuous crystal plate growth process and apparatus
JP3734860B2 (ja) * 1995-08-25 2006-01-11 日本碍子株式会社 酸化物単結晶の製造方法および装置
JPH09175882A (ja) * 1995-12-26 1997-07-08 Shin Etsu Handotai Co Ltd 単結晶引上げ装置の部材取扱方法、単結晶引上げ装置の部材取扱機構、及び単結晶引上げ装置の部材取扱治具
JP3759807B2 (ja) * 1997-03-12 2006-03-29 日本碍子株式会社 酸化物単結晶体の製造方法およびその装置
CA2348399A1 (en) * 1998-10-30 2000-05-11 Volusense As Volumetric physiological measuring system
US7390307B2 (en) * 1999-10-28 2008-06-24 Volusense As Volumetric physiological measuring system and method
JP4257717B2 (ja) 2000-02-14 2009-04-22 日本碍子株式会社 単結晶育成用の原料粉末の製造方法および単結晶の製造方法
US6447603B2 (en) 2000-03-03 2002-09-10 Ngk Insulators, Ltd. Process and apparatus for producing oxide single crystals
JP2001253792A (ja) * 2000-03-09 2001-09-18 Ngk Insulators Ltd 酸化物単結晶の板状体の製造方法
JP4334773B2 (ja) * 2000-03-09 2009-09-30 日本碍子株式会社 酸化物単結晶の板状体の製造方法
US6513226B2 (en) 2000-03-28 2003-02-04 Ngk Insulators, Ltd. Method of manufacturing film structure, method of manufacturing optical waveguide substrate and method of manufacturing second harmonic generation device
JP4365002B2 (ja) * 2000-05-17 2009-11-18 日本碍子株式会社 酸化物単結晶の製造方法および製造装置
US6565654B2 (en) * 2000-07-05 2003-05-20 Ngk Insulators, Ltd. Process and apparatus for producing a planar body of an oxide single crystal
US6475942B1 (en) * 2000-09-05 2002-11-05 General Electric Company Conversion of polycrystalline alumina to single crystal sapphire using molybdenum doping
US6436208B1 (en) * 2001-04-19 2002-08-20 The United States Of America As Represented By The Secretary Of The Navy Process for preparing aligned in-situ two phase single crystal composites of titanium-niobium alloys
KR20060015524A (ko) * 2003-04-23 2006-02-17 스텔라 케미파 코포레이션 불화물 결정의 제조 장치
US7348076B2 (en) 2004-04-08 2008-03-25 Saint-Gobain Ceramics & Plastics, Inc. Single crystals and methods for fabricating same
US7113535B2 (en) * 2004-05-21 2006-09-26 Ajax Tocco Magnethermic Corporation Induction furnace for melting granular materials
ATE468427T1 (de) * 2004-08-05 2010-06-15 Amosov Vladimir Iljich Verfahren zum ziehen von einkristallen aus einer schmelze
JP2006206351A (ja) * 2005-01-26 2006-08-10 Tdk Corp 引下げ装置及び当該装置に用いられる容器
US20110200841A1 (en) * 2009-12-22 2011-08-18 Grain Free Products, Inc. System for the production of grain free metal products
CN102574179B (zh) * 2010-02-26 2015-07-15 现代制铁株式会社 用于测量材料温度的装置和方法
DE102011007149A1 (de) * 2011-04-11 2012-10-11 Streicher Maschinenbau GmbH & Co. KG Verfahren und Vorrichtung zur Herstellung von Material mit mono- oder multikristalliner Struktur
WO2018221920A1 (ko) * 2017-05-29 2018-12-06 경희대학교 산학협력단 글라스-코팅 미세와이어를 이용한 비구형/비대칭 미립자의 제조방법
KR102082187B1 (ko) * 2017-05-29 2020-02-27 경희대학교 산학협력단 글라스-코팅 미세와이어를 이용한 비구형/비대칭 미립자의 제조방법
US11047650B2 (en) 2017-09-29 2021-06-29 Saint-Gobain Ceramics & Plastics, Inc. Transparent composite having a laminated structure
JP2021172575A (ja) * 2020-04-30 2021-11-01 Tdk株式会社 坩堝および結晶製造装置
CN114371223B (zh) * 2022-03-16 2022-09-20 浙江大学杭州国际科创中心 一种碳化硅晶体生长检测装置、方法及碳化硅晶体生长炉
CN115613121A (zh) * 2022-11-18 2023-01-17 浙江晶盛机电股份有限公司 晶体生产设备及籽晶的断裂方法

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CA1261715A (en) * 1984-07-06 1989-09-26 General Signal Corporation Apparatus and process for growing monocrystals of semiconductor materials from shallow crucibles by czochralski technique
JPH06104598B2 (ja) * 1985-06-14 1994-12-21 住友電気工業株式会社 単結晶フアイバの製造方法
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DE3735434A1 (de) * 1987-10-20 1989-05-03 Juergen Wisotzki Verfahren und vorrichtung zur herstellung von einkristallinen halbleiterplatten
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Also Published As

Publication number Publication date
DE69623837T2 (de) 2003-07-31
US5961720A (en) 1999-10-05
EP0733728A3 (de) 1997-12-29
US6036775A (en) 2000-03-14
US5690734A (en) 1997-11-25
EP1217103A3 (de) 2004-02-25
EP0733728B1 (de) 2002-09-25
EP0733728A2 (de) 1996-09-25
EP1217103A2 (de) 2002-06-26

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