DE69724886D1 - Verfahren und Vorrichtung zum Kristallziehen - Google Patents

Verfahren und Vorrichtung zum Kristallziehen

Info

Publication number
DE69724886D1
DE69724886D1 DE69724886T DE69724886T DE69724886D1 DE 69724886 D1 DE69724886 D1 DE 69724886D1 DE 69724886 T DE69724886 T DE 69724886T DE 69724886 T DE69724886 T DE 69724886T DE 69724886 D1 DE69724886 D1 DE 69724886D1
Authority
DE
Germany
Prior art keywords
crystal pulling
pulling method
crystal
pulling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69724886T
Other languages
English (en)
Other versions
DE69724886T2 (de
Inventor
Masahiko Urano
Yasushi Nakamura
Seiichiro Otsuka
Eiichi Iino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE69724886D1 publication Critical patent/DE69724886D1/de
Publication of DE69724886T2 publication Critical patent/DE69724886T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]
DE69724886T 1996-07-23 1997-07-02 Verfahren und Vorrichtung zum Kristallziehen Expired - Fee Related DE69724886T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP21205596A JP3528448B2 (ja) 1996-07-23 1996-07-23 単結晶の引上げ方法及び装置
JP21205596 1996-07-23

Publications (2)

Publication Number Publication Date
DE69724886D1 true DE69724886D1 (de) 2003-10-23
DE69724886T2 DE69724886T2 (de) 2004-07-08

Family

ID=16616125

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69724886T Expired - Fee Related DE69724886T2 (de) 1996-07-23 1997-07-02 Verfahren und Vorrichtung zum Kristallziehen

Country Status (6)

Country Link
US (1) US5879448A (de)
EP (1) EP0821083B1 (de)
JP (1) JP3528448B2 (de)
KR (1) KR980009530A (de)
DE (1) DE69724886T2 (de)
TW (1) TW567253B (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980079891A (ko) * 1997-03-27 1998-11-25 모리 레이자로 단결정 성장장치 및 단결정 성장방법
JPH10273390A (ja) * 1997-03-28 1998-10-13 Super Silicon Kenkyusho:Kk 半導体単結晶製造装置
JPH10279386A (ja) * 1997-03-31 1998-10-20 Super Silicon Kenkyusho:Kk 単結晶引上げ装置及び単結晶支持機構並びに単結晶引上げ方法
JP3964002B2 (ja) * 1997-06-02 2007-08-22 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 単結晶保持装置及び単結晶保持方法
TW370580B (en) * 1997-09-22 1999-09-21 Super Silicon Crystal Res Monocrystal pulling device
JP4149016B2 (ja) * 1997-10-23 2008-09-10 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 結晶体引上げ装置の結晶体把持機構
JPH11199374A (ja) * 1998-01-07 1999-07-27 Komatsu Ltd 単結晶の引き上げ装置および落下防止装置
US6090198A (en) * 1998-12-07 2000-07-18 Seh America, Inc. Method for reducing thermal shock in a seed crystal during growth of a crystalline ingot
US6869477B2 (en) * 2000-02-22 2005-03-22 Memc Electronic Materials, Inc. Controlled neck growth process for single crystal silicon
US6835247B2 (en) * 2000-10-31 2004-12-28 Advanced Silicon Materials Llc Rod replenishment system for use in single crystal silicon production
US6514337B2 (en) 2001-02-07 2003-02-04 Seh America, Inc. Method of growing large-diameter dislocation-free<110> crystalline ingots
WO2003021011A1 (en) * 2001-08-29 2003-03-13 Memc Electronic Materials, Inc. Process for eliminating neck dislocations during czochralski crystal growth
US6866713B2 (en) * 2001-10-26 2005-03-15 Memc Electronic Materials, Inc. Seed crystals for pulling single crystal silicon
DE102005040229B4 (de) * 2005-08-25 2011-12-22 Siltronic Ag Unterstützungsvorrichtung zur Unterstützung eines wachsenden Einkristalls aus Halbleitermaterial und Verfahren zur Herstellung eines Einkristalls
DE102008047599B4 (de) * 2008-09-17 2012-12-20 Siltronic Ag Vorrichtung und Verfahren zum Ziehen eines Einkristalls
JP5483591B2 (ja) * 2010-10-08 2014-05-07 日鉄住金ファインテック株式会社 単結晶引上装置および坩堝支持装置
KR101874712B1 (ko) 2016-12-07 2018-07-04 에스케이실트론 주식회사 잉곳 성장 제어장치 및 그 제어방법
US20200002838A1 (en) * 2018-06-28 2020-01-02 Global Wafers Co., Ltd. Methods for producing a silicon ingot that involve monitoring a moving average of the ingot neck pull rate
US20200002839A1 (en) * 2018-06-28 2020-01-02 Global Wafers Co., Ltd. Monitoring a moving average of the ingot neck pull rate to control the quality of the neck for ingot growth
CN109306524B (zh) * 2018-11-21 2021-01-05 南京晶升能源设备有限公司 蓝宝石单晶炉的晶体平衡提升装置及提升方法
CN113549999A (zh) * 2020-04-26 2021-10-26 内蒙古中环协鑫光伏材料有限公司 自动稳定籽晶的单晶炉定位机构、单晶炉系统及稳定方法
CN112725879B (zh) * 2020-12-22 2022-03-22 江苏大学 一种可提拉的直拉法单晶硅夹持机构及工作方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63252991A (ja) * 1987-04-09 1988-10-20 Mitsubishi Metal Corp 落下防止保持部を有するｃｚ単結晶
DE69112463T2 (de) * 1990-03-30 1996-02-15 Shinetsu Handotai Kk Vorrichtung zur Herstellung von Monokristallen nach dem Czochralski-Verfahren.
US5441014A (en) * 1991-06-24 1995-08-15 Komatsu Electronic Metals Co., Ltd. Apparatus for pulling up a single crystal
US5487355A (en) * 1995-03-03 1996-01-30 Motorola, Inc. Semiconductor crystal growth method
JP3402012B2 (ja) * 1995-04-21 2003-04-28 信越半導体株式会社 単結晶の成長方法及び装置
JP3402040B2 (ja) * 1995-12-27 2003-04-28 信越半導体株式会社 単結晶保持装置

Also Published As

Publication number Publication date
JP3528448B2 (ja) 2004-05-17
EP0821083B1 (de) 2003-09-17
DE69724886T2 (de) 2004-07-08
TW567253B (en) 2003-12-21
KR980009530A (ko) 1998-04-30
JPH1036187A (ja) 1998-02-10
EP0821083A1 (de) 1998-01-28
US5879448A (en) 1999-03-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee