DE68908435T2 - Vorrichtung und Verfahren zum Kristallziehen. - Google Patents

Vorrichtung und Verfahren zum Kristallziehen.

Info

Publication number
DE68908435T2
DE68908435T2 DE89102992T DE68908435T DE68908435T2 DE 68908435 T2 DE68908435 T2 DE 68908435T2 DE 89102992 T DE89102992 T DE 89102992T DE 68908435 T DE68908435 T DE 68908435T DE 68908435 T2 DE68908435 T2 DE 68908435T2
Authority
DE
Germany
Prior art keywords
crystal pulling
pulling apparatus
crystal
pulling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE89102992T
Other languages
English (en)
Other versions
DE68908435D1 (de
Inventor
Youji Yamashita
Masakatu Kojima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE68908435D1 publication Critical patent/DE68908435D1/de
Publication of DE68908435T2 publication Critical patent/DE68908435T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
DE89102992T 1988-02-22 1989-02-21 Vorrichtung und Verfahren zum Kristallziehen. Expired - Fee Related DE68908435T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63039152A JP2755588B2 (ja) 1988-02-22 1988-02-22 結晶引上げ方法

Publications (2)

Publication Number Publication Date
DE68908435D1 DE68908435D1 (de) 1993-09-23
DE68908435T2 true DE68908435T2 (de) 1994-01-05

Family

ID=12545135

Family Applications (1)

Application Number Title Priority Date Filing Date
DE89102992T Expired - Fee Related DE68908435T2 (de) 1988-02-22 1989-02-21 Vorrichtung und Verfahren zum Kristallziehen.

Country Status (5)

Country Link
US (1) US5021225A (de)
EP (1) EP0330141B1 (de)
JP (1) JP2755588B2 (de)
KR (1) KR920009563B1 (de)
DE (1) DE68908435T2 (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10020523B4 (de) * 1999-04-27 2007-06-21 Tokyo Electron Ltd. Vorrichtung und Verfahren zur Bearbeitung eines Gegenstandes
DE19700403B4 (de) * 1996-01-12 2013-04-11 Mitsubishi Materials Silicon Corp. Einkristallziehvorrichtung

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2585123B2 (ja) * 1990-04-13 1997-02-26 東芝セラミックス株式会社 シリコン単結晶の製造方法
JP3015656B2 (ja) * 1994-03-23 2000-03-06 株式会社東芝 半絶縁性ＧａＡｓ単結晶の製造方法および製造装置
JP3769800B2 (ja) * 1996-01-12 2006-04-26 株式会社Ｓｕｍｃｏ 単結晶引上装置
US6179914B1 (en) * 1999-02-02 2001-01-30 Seh America, Inc. Dopant delivery system and method
KR100702538B1 (ko) * 2005-02-28 2007-04-04 네오세미테크 주식회사 액상봉입형 초크랄스키법에 의한 갈륨비소 단결정 성장용반응용기 인상 장치
MY159737A (en) 2010-09-03 2017-01-31 Gtat Ip Holding Llc Silicon single crystal doped with gallium, indium, or aluminum
US10202705B2 (en) * 2011-04-14 2019-02-12 Gtat Ip Holding Llc Silicon ingot having uniform multiple dopants and method and apparatus for producing same
CN103635613B (zh) * 2011-05-06 2017-02-15 Gtat Ip控股有限责任公司 通过仅掺杂初始装料而生长均匀掺杂硅锭
US20140144371A1 (en) * 2012-11-29 2014-05-29 Solaicx, Inc. Heat Shield For Improved Continuous Czochralski Process
US9863062B2 (en) 2013-03-14 2018-01-09 Corner Star Limited Czochralski crucible for controlling oxygen and related methods
US20140261155A1 (en) * 2013-03-15 2014-09-18 Memc Electronic Materials, Inc. Crucible for controlling oxygen and related methods
US9822466B2 (en) 2013-11-22 2017-11-21 Corner Star Limited Crystal growing systems and crucibles for enhancing heat transfer to a melt
KR101680213B1 (ko) * 2015-04-06 2016-11-28 주식회사 엘지실트론 실리콘 단결정 잉곳의 성장 방법
CN108138354B (zh) * 2015-05-01 2021-05-28 各星有限公司 生产被挥发性掺杂剂掺杂的单晶锭的方法
US10407797B2 (en) * 2017-05-04 2019-09-10 Corner Start Limited Crystal pulling system and method including crucible and barrier

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR66315E (fr) * 1906-09-03 1956-06-29 Int Standard Electric Corp Dispositifs amplificateurs utilisant des semi-conducteurs ou des cristaux
US2809136A (en) * 1954-03-10 1957-10-08 Sylvania Electric Prod Apparatus and method of preparing crystals of silicon germanium group
NL244873A (de) * 1958-11-17
NL6917398A (de) * 1969-03-18 1970-09-22
DE2152801A1 (de) * 1970-11-09 1972-05-10 Little Inc A Verfahren und Ofen zum Ziehen von Kristallen gleichförmiger Zusammensetzung nach dem Czochralski-Verfahren
US4036595A (en) * 1975-11-06 1977-07-19 Siltec Corporation Continuous crystal growing furnace
US4190631A (en) * 1978-09-21 1980-02-26 Western Electric Company, Incorporated Double crucible crystal growing apparatus
JPS5556098A (en) * 1978-10-17 1980-04-24 Chiyou Lsi Gijutsu Kenkyu Kumiai Method and apparatus for producing si single crystal rod
US4353875A (en) * 1978-11-06 1982-10-12 Allied Corporation Apparatus for growing crystalline materials
US4456499A (en) * 1979-05-25 1984-06-26 At&T Technologies, Inc. Double crucible Czochralski crystal growth method
US4246064A (en) * 1979-07-02 1981-01-20 Western Electric Company, Inc. Double crucible crystal growing process
US4659421A (en) * 1981-10-02 1987-04-21 Energy Materials Corporation System for growth of single crystal materials with extreme uniformity in their structural and electrical properties
JPS58172290A (ja) * 1982-03-31 1983-10-11 Sumitomo Electric Ind Ltd 化合物半導体単結晶の引上方法および装置
JPS5913693A (ja) * 1982-07-15 1984-01-24 Toshiba Corp 化合物半導体単結晶育成装置
DE3316547C2 (de) * 1983-05-06 1985-05-30 Philips Patentverwaltung Gmbh, 2000 Hamburg Kalter Tiegel für das Erschmelzen nichtmetallischer anorganischer Verbindungen
JPS6033294A (ja) * 1983-07-29 1985-02-20 Toshiba Ceramics Co Ltd 単結晶半導体引上装置
JPS6379790A (ja) * 1986-09-22 1988-04-09 Toshiba Corp 結晶引上げ装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19700403B4 (de) * 1996-01-12 2013-04-11 Mitsubishi Materials Silicon Corp. Einkristallziehvorrichtung
DE10020523B4 (de) * 1999-04-27 2007-06-21 Tokyo Electron Ltd. Vorrichtung und Verfahren zur Bearbeitung eines Gegenstandes

Also Published As

Publication number Publication date
KR920009563B1 (ko) 1992-10-19
JPH01215788A (ja) 1989-08-29
JP2755588B2 (ja) 1998-05-20
EP0330141B1 (de) 1993-08-18
DE68908435D1 (de) 1993-09-23
KR890013228A (ko) 1989-09-22
US5021225A (en) 1991-06-04
EP0330141A1 (de) 1989-08-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee