KR890013228A - 반도체 결정의 인상 방법 - Google Patents

반도체 결정의 인상 방법

Info

Publication number
KR890013228A
KR890013228A KR1019890002086A KR890002086A KR890013228A KR 890013228 A KR890013228 A KR 890013228A KR 1019890002086 A KR1019890002086 A KR 1019890002086A KR 890002086 A KR890002086 A KR 890002086A KR 890013228 A KR890013228 A KR 890013228A
Authority
KR
South Korea
Prior art keywords
semiconductor crystals
raise
raise semiconductor
crystals
semiconductor
Prior art date
Application number
KR1019890002086A
Other languages
English (en)
Other versions
KR920009563B1 (ko
Inventor
유지 야마시타
마사가츠 고지마
Original Assignee
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 도시바 filed Critical 가부시키가이샤 도시바
Publication of KR890013228A publication Critical patent/KR890013228A/ko
Application granted granted Critical
Publication of KR920009563B1 publication Critical patent/KR920009563B1/ko

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
KR1019890002086A 1988-02-22 1989-02-22 반도체 결정의 인상 방법 KR920009563B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63039152A JP2755588B2 (ja) 1988-02-22 1988-02-22 結晶引上げ方法
JP9152 1988-02-22

Publications (2)

Publication Number Publication Date
KR890013228A true KR890013228A (ko) 1989-09-22
KR920009563B1 KR920009563B1 (ko) 1992-10-19

Family

ID=12545135

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890002086A KR920009563B1 (ko) 1988-02-22 1989-02-22 반도체 결정의 인상 방법

Country Status (5)

Country Link
US (1) US5021225A (ko)
EP (1) EP0330141B1 (ko)
JP (1) JP2755588B2 (ko)
KR (1) KR920009563B1 (ko)
DE (1) DE68908435T2 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100702538B1 (ko) * 2005-02-28 2007-04-04 네오세미테크 주식회사 액상봉입형 초크랄스키법에 의한 갈륨비소 단결정 성장용반응용기 인상 장치

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2585123B2 (ja) * 1990-04-13 1997-02-26 東芝セラミックス株式会社 シリコン単結晶の製造方法
JP3015656B2 (ja) * 1994-03-23 2000-03-06 株式会社東芝 半絶縁性ＧａＡｓ単結晶の製造方法および製造装置
JPH09194289A (ja) * 1996-01-12 1997-07-29 Mitsubishi Materials Shilicon Corp 単結晶引上装置
JP3769800B2 (ja) * 1996-01-12 2006-04-26 株式会社Ｓｕｍｃｏ 単結晶引上装置
US6179914B1 (en) * 1999-02-02 2001-01-30 Seh America, Inc. Dopant delivery system and method
TW499696B (en) * 1999-04-27 2002-08-21 Tokyo Electron Ltd Processing apparatus and processing method
MY159737A (en) 2010-09-03 2017-01-31 Gtat Ip Holding Llc Silicon single crystal doped with gallium, indium, or aluminum
JP2014511146A (ja) * 2011-04-14 2014-05-12 ジーティー アドヴァンスト シーズィー， エルエルシー 均一な複数のドーパントを有するシリコンインゴット並びにそれを生成するための方法及び装置
MY169752A (en) * 2011-05-06 2019-05-15 Gt Advanced Cz Llc Growth of a uniformly doped silicon ingot by doping only the initial charge
US20140144371A1 (en) * 2012-11-29 2014-05-29 Solaicx, Inc. Heat Shield For Improved Continuous Czochralski Process
US20140261155A1 (en) * 2013-03-15 2014-09-18 Memc Electronic Materials, Inc. Crucible for controlling oxygen and related methods
US9863062B2 (en) * 2013-03-14 2018-01-09 Corner Star Limited Czochralski crucible for controlling oxygen and related methods
US9822466B2 (en) 2013-11-22 2017-11-21 Corner Star Limited Crystal growing systems and crucibles for enhancing heat transfer to a melt
KR101680213B1 (ko) * 2015-04-06 2016-11-28 주식회사 엘지실트론 실리콘 단결정 잉곳의 성장 방법
CN108138354B (zh) * 2015-05-01 2021-05-28 各星有限公司 生产被挥发性掺杂剂掺杂的单晶锭的方法
US10407797B2 (en) * 2017-05-04 2019-09-10 Corner Start Limited Crystal pulling system and method including crucible and barrier

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR66315E (fr) * 1906-09-03 1956-06-29 Int Standard Electric Corp Dispositifs amplificateurs utilisant des semi-conducteurs ou des cristaux
US2809136A (en) * 1954-03-10 1957-10-08 Sylvania Electric Prod Apparatus and method of preparing crystals of silicon germanium group
NL121446C (ko) * 1958-11-17
NL6917398A (ko) * 1969-03-18 1970-09-22
DE2152801A1 (de) * 1970-11-09 1972-05-10 Little Inc A Verfahren und Ofen zum Ziehen von Kristallen gleichförmiger Zusammensetzung nach dem Czochralski-Verfahren
US4036595A (en) * 1975-11-06 1977-07-19 Siltec Corporation Continuous crystal growing furnace
US4190631A (en) * 1978-09-21 1980-02-26 Western Electric Company, Incorporated Double crucible crystal growing apparatus
JPS5556098A (en) * 1978-10-17 1980-04-24 Chiyou Lsi Gijutsu Kenkyu Kumiai Method and apparatus for producing si single crystal rod
US4353875A (en) * 1978-11-06 1982-10-12 Allied Corporation Apparatus for growing crystalline materials
US4456499A (en) * 1979-05-25 1984-06-26 At&T Technologies, Inc. Double crucible Czochralski crystal growth method
US4246064A (en) * 1979-07-02 1981-01-20 Western Electric Company, Inc. Double crucible crystal growing process
US4659421A (en) * 1981-10-02 1987-04-21 Energy Materials Corporation System for growth of single crystal materials with extreme uniformity in their structural and electrical properties
JPS58172290A (ja) * 1982-03-31 1983-10-11 Sumitomo Electric Ind Ltd 化合物半導体単結晶の引上方法および装置
JPS5913693A (ja) * 1982-07-15 1984-01-24 Toshiba Corp 化合物半導体単結晶育成装置
DE3316547C2 (de) * 1983-05-06 1985-05-30 Philips Patentverwaltung Gmbh, 2000 Hamburg Kalter Tiegel für das Erschmelzen nichtmetallischer anorganischer Verbindungen
JPS6033294A (ja) * 1983-07-29 1985-02-20 Toshiba Ceramics Co Ltd 単結晶半導体引上装置
JPS6379790A (ja) * 1986-09-22 1988-04-09 Toshiba Corp 結晶引上げ装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100702538B1 (ko) * 2005-02-28 2007-04-04 네오세미테크 주식회사 액상봉입형 초크랄스키법에 의한 갈륨비소 단결정 성장용반응용기 인상 장치

Also Published As

Publication number Publication date
DE68908435D1 (de) 1993-09-23
US5021225A (en) 1991-06-04
JP2755588B2 (ja) 1998-05-20
EP0330141B1 (en) 1993-08-18
JPH01215788A (ja) 1989-08-29
EP0330141A1 (en) 1989-08-30
DE68908435T2 (de) 1994-01-05
KR920009563B1 (ko) 1992-10-19

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