DE68926601D1 - Halbleitermessaufnehmer - Google Patents

Halbleitermessaufnehmer

Info

Publication number
DE68926601D1
DE68926601D1 DE68926601T DE68926601T DE68926601D1 DE 68926601 D1 DE68926601 D1 DE 68926601D1 DE 68926601 T DE68926601 T DE 68926601T DE 68926601 T DE68926601 T DE 68926601T DE 68926601 D1 DE68926601 D1 DE 68926601D1
Authority
DE
Germany
Prior art keywords
semiconductor sensor
semiconductor
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68926601T
Other languages
English (en)
Other versions
DE68926601T2 (de
Inventor
Satoshi Hiyama
Masanobu Urabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honda Motor Co Ltd
Original Assignee
Honda Motor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP63219862A external-priority patent/JPH077013B2/ja
Priority claimed from JP63224975A external-priority patent/JP2851049B2/ja
Priority claimed from JP349689A external-priority patent/JP2641104B2/ja
Priority claimed from JP1458189A external-priority patent/JPH02194343A/ja
Priority claimed from JP1137883A external-priority patent/JP2748277B2/ja
Priority claimed from JP1137884A external-priority patent/JP2748278B2/ja
Priority claimed from JP1145752A external-priority patent/JP2836846B2/ja
Application filed by Honda Motor Co Ltd filed Critical Honda Motor Co Ltd
Publication of DE68926601D1 publication Critical patent/DE68926601D1/de
Application granted granted Critical
Publication of DE68926601T2 publication Critical patent/DE68926601T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
    • G01P15/123—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by piezo-resistive elements, e.g. semiconductor strain gauges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
    • G01P15/124—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by semiconductor devices comprising at least one PN junction, e.g. transistors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
    • G01P2015/0825—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
    • G01P2015/0828—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being of the paddle type being suspended at one of its longitudinal ends
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S73/00—Measuring and testing
    • Y10S73/04—Piezoelectric

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
DE68926601T 1988-09-02 1989-09-01 Halbleitermessaufnehmer Expired - Fee Related DE68926601T2 (de)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP63219862A JPH077013B2 (ja) 1988-09-02 1988-09-02 半導体センサ
JP63224975A JP2851049B2 (ja) 1988-09-08 1988-09-08 半導体センサ
JP349689A JP2641104B2 (ja) 1989-01-10 1989-01-10 半導体応力センサ
JP1458189A JPH02194343A (ja) 1989-01-24 1989-01-24 半導体応力センサ
JP1137884A JP2748278B2 (ja) 1989-05-31 1989-05-31 半導体センサ
JP1137883A JP2748277B2 (ja) 1989-05-31 1989-05-31 半導体センサ
JP1145752A JP2836846B2 (ja) 1989-06-08 1989-06-08 半導体センサ

Publications (2)

Publication Number Publication Date
DE68926601D1 true DE68926601D1 (de) 1996-07-11
DE68926601T2 DE68926601T2 (de) 1997-01-23

Family

ID=27563232

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68926601T Expired - Fee Related DE68926601T2 (de) 1988-09-02 1989-09-01 Halbleitermessaufnehmer

Country Status (3)

Country Link
US (2) US5115292A (de)
EP (1) EP0363005B1 (de)
DE (1) DE68926601T2 (de)

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FR2653197B1 (fr) * 1989-10-12 1991-12-27 Vulcanic Procede d'etancheification d'une extremite d'element de chauffage electrique et element etancheifie par ce procede.
JP2532149B2 (ja) * 1990-02-06 1996-09-11 本田技研工業株式会社 半導体センサ
JP2587147B2 (ja) * 1991-05-17 1997-03-05 本田技研工業株式会社 半導体センサ
DE4137624A1 (de) * 1991-11-15 1993-05-19 Bosch Gmbh Robert Silizium-chip zur verwendung in einem kraftsensor
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JP4990049B2 (ja) * 2007-07-02 2012-08-01 株式会社リコー 温度検出回路
US8132465B1 (en) * 2007-08-01 2012-03-13 Silicon Microstructures, Inc. Sensor element placement for package stress compensation
JP5506258B2 (ja) * 2008-08-06 2014-05-28 キヤノン株式会社 整流素子
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JP5778619B2 (ja) * 2012-05-02 2015-09-16 セイコーインスツル株式会社 圧力センサ
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JP6923945B2 (ja) * 2016-09-14 2021-08-25 国立大学法人神戸大学 力センサ、および、力センサの製造方法
EP3618101A1 (de) * 2018-08-31 2020-03-04 Melexis Technologies NV Sensorvorrichtung und verfahren zu ihrer herstellung
US11536260B2 (en) * 2018-09-17 2022-12-27 Microjet Technology Co., Ltd. Micro-electromechanical system pump
CN110943066A (zh) * 2018-09-21 2020-03-31 联华电子股份有限公司 具有高电阻晶片的半导体结构及高电阻晶片的接合方法
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JP7092692B2 (ja) 2019-01-22 2022-06-28 エイブリック株式会社 応力補償制御回路及び半導体センサ装置
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Also Published As

Publication number Publication date
EP0363005A3 (de) 1991-05-29
EP0363005B1 (de) 1996-06-05
DE68926601T2 (de) 1997-01-23
EP0363005A2 (de) 1990-04-11
US5279162A (en) 1994-01-18
US5115292A (en) 1992-05-19

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee