JP6923945B2 - 力センサ、および、力センサの製造方法 - Google Patents
力センサ、および、力センサの製造方法 Download PDFInfo
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- JP6923945B2 JP6923945B2 JP2018539577A JP2018539577A JP6923945B2 JP 6923945 B2 JP6923945 B2 JP 6923945B2 JP 2018539577 A JP2018539577 A JP 2018539577A JP 2018539577 A JP2018539577 A JP 2018539577A JP 6923945 B2 JP6923945 B2 JP 6923945B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 238000001514 detection method Methods 0.000 claims description 107
- 239000000523 sample Substances 0.000 claims description 55
- 239000011347 resin Substances 0.000 claims description 23
- 229920005989 resin Polymers 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000002344 surface layer Substances 0.000 claims description 9
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 239000000758 substrate Substances 0.000 description 17
- 239000010410 layer Substances 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000004020 conductor Substances 0.000 description 11
- 239000012212 insulator Substances 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000005530 etching Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 235000012489 doughnuts Nutrition 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001356 surgical procedure Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L5/00—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes
- G01L5/16—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes for measuring several components of force
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
- G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L5/00—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes
- G01L5/16—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes for measuring several components of force
- G01L5/161—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes for measuring several components of force using variations in ohmic resistance
- G01L5/1627—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes for measuring several components of force using variations in ohmic resistance of strain gauges
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Force Measurement Appropriate To Specific Purposes (AREA)
- Micromachines (AREA)
- Pressure Sensors (AREA)
- Measurement Of Force In General (AREA)
Description
101 検出部
102 弾性部
103 探針部
104 保持部
105 端子部
106 カバー
110 基礎部材
111 素子部
112 分割孔
119 配線部材
141 電極
151 導電体部
152 絶縁体部
153 凹部
154 貫通孔
Claims (6)
- MEMS(Micro Electro Mechanical Systems)としての力センサであって、
半導体からなる基礎部材の表層の一部に素子部が設けられる検出部が円周上に並んで複数配置され、
前記検出部を挟んだ状態で配置される樹脂製の弾性部と、
前記検出部が配置される円周の中央部において前記検出部の一端部にそれぞれ接続され、前記弾性部から突出する位置にまで延在し、前記弾性部を介さずに直接力が加えられる探針部と
を備える力センサ。 - 前記検出部が配置される円周の外周部において前記検出部の他端部にそれぞれ接続される保持部と、
前記探針部の反対側において、前記保持部に接続される端子部とをさらに備え、
前記端子部は、
前記検出部と対向する部分に前記弾性部を収容する凹部と、前記凹部に連通する貫通孔とを備える
請求項1に記載の力センサ。 - 前記検出部において、前記素子部は、前記探針部の反対側に配置される
請求項1または2に記載の力センサ。 - 前記探針部に取り付けられ、前記探針部を覆うカバーをさらに備える
請求項1〜3のいずれか一項に記載の力センサ。 - MEMS(Micro Electro Mechanical Systems)としての力センサの製造方法であって、
半導体からなる基礎部材の表層の一部に素子部が円周上に並んで複数配置される検出部を成形し、
前記基礎部材において、隣り合う前記検出部の間に厚さ方向に貫通する分割孔を成形し、
前記検出部が配置される円周の中央部において前記検出部の一端部にそれぞれ接続される突出状の探針部を成形し、
前記検出部が配置される円周の外周部において前記検出部の他端部にそれぞれ接続される保持部に対し、前記探針部の反対側から端子部を電気的、かつ、機械的に接続し、
前記端子部の前記検出部と対向する部分に設けられる凹部に、前記凹部に連通する貫通孔を用いて樹脂を前記凹部に充填し、さらに、前記分割孔を通して前記検出部を挟んだ状態となるように前記樹脂を配置し、前記樹脂を硬化させて弾性部を成形する
力センサの製造方法。 - 樹脂を前記凹部に充填する前に、前記樹脂の流れを規制するカバーを前記探針部に取り付ける
請求項5に記載の力センサの製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016179650 | 2016-09-14 | ||
JP2016179650 | 2016-09-14 | ||
PCT/JP2017/029290 WO2018051703A1 (ja) | 2016-09-14 | 2017-08-14 | 力センサ、および、力センサの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2018051703A1 JPWO2018051703A1 (ja) | 2019-07-25 |
JP6923945B2 true JP6923945B2 (ja) | 2021-08-25 |
Family
ID=61619585
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018539577A Active JP6923945B2 (ja) | 2016-09-14 | 2017-08-14 | 力センサ、および、力センサの製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US11243130B2 (ja) |
JP (1) | JP6923945B2 (ja) |
WO (1) | WO2018051703A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3795969A1 (en) * | 2019-09-18 | 2021-03-24 | Von Tringelberg UG | Force gauge |
US20230127077A1 (en) * | 2021-10-08 | 2023-04-27 | Qorvo Us, Inc. | Input structures for strain detection |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0530122Y2 (ja) * | 1987-08-28 | 1993-08-02 | ||
JP2549712B2 (ja) * | 1988-07-27 | 1996-10-30 | 日本碍子株式会社 | 応力検出器 |
EP0363005B1 (en) * | 1988-09-02 | 1996-06-05 | Honda Giken Kogyo Kabushiki Kaisha | A semiconductor sensor |
JPH0676929B2 (ja) * | 1988-09-13 | 1994-09-28 | 工業技術院長 | 分布型圧覚センサ |
JP2001004656A (ja) * | 1999-04-22 | 2001-01-12 | Ngk Insulators Ltd | 力センサ及びその感度調整方法 |
JP2003004562A (ja) * | 2001-06-18 | 2003-01-08 | Alps Electric Co Ltd | 入力装置ならびに検出装置 |
US6871552B2 (en) * | 2002-04-12 | 2005-03-29 | Deutsches Zentrum für Luft- und Raumfahrt e.V. | Force moment sensor |
WO2003087750A1 (fr) * | 2002-04-15 | 2003-10-23 | K-Tech Devices Corp. | Capteur de contrainte |
US7554167B2 (en) * | 2003-12-29 | 2009-06-30 | Vladimir Vaganov | Three-dimensional analog input control device |
JP2006275979A (ja) | 2005-03-30 | 2006-10-12 | National Institute Of Information & Communication Technology | センサ素子、センサ装置、対象物移動制御装置、対象物判別装置 |
JP5470533B2 (ja) * | 2010-02-18 | 2014-04-16 | 株式会社国際電気通信基礎技術研究所 | 触覚センサおよびそれを備えたロボット |
JP5776334B2 (ja) * | 2011-05-31 | 2015-09-09 | セイコーエプソン株式会社 | 応力検出素子、センサーモジュール、電子機器、及び把持装置 |
US9728652B2 (en) * | 2012-01-25 | 2017-08-08 | Infineon Technologies Ag | Sensor device and method |
JP5714648B2 (ja) * | 2012-11-16 | 2015-05-07 | 株式会社豊田中央研究所 | 力学量memsセンサ及び力学量memsセンサシステム |
KR20140067650A (ko) * | 2012-11-27 | 2014-06-05 | 현대자동차주식회사 | 토크 센서 |
JP6139377B2 (ja) | 2013-10-28 | 2017-05-31 | 国立大学法人東北大学 | センサ装置およびその製造方法 |
WO2015143281A1 (en) * | 2014-03-21 | 2015-09-24 | President And Fellows Of Harvard College | Monolithic, multi-axis force sensor |
-
2017
- 2017-08-14 WO PCT/JP2017/029290 patent/WO2018051703A1/ja active Application Filing
- 2017-08-14 US US16/332,677 patent/US11243130B2/en active Active
- 2017-08-14 JP JP2018539577A patent/JP6923945B2/ja active Active
Also Published As
Publication number | Publication date |
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WO2018051703A1 (ja) | 2018-03-22 |
US11243130B2 (en) | 2022-02-08 |
US20210285834A1 (en) | 2021-09-16 |
JPWO2018051703A1 (ja) | 2019-07-25 |
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